Abstract: A semiconductor device includes an annular seal ring formed in a seal ring region surrounding a circuit forming region. The seal ring includes a BOX layer, an n-type semiconductor layer, and an annular electrode portion comprised of multiple layers of wirings. The electrode portion is electrically connected with the n-type semiconductor layer through a plug electrode.

Abstract: In an embodiment, an amplifier includes first, second, and third stages, and a feedback network. The first stage has a first passband and is configured to generate a first output signal in response to first and second input signals, and the second stage has a second passband that is higher in frequency than the first passband and is configured to generate a second output signal in response to third and fourth input signals. The third stage has a first input node coupled to receive the first output signal, a second input node coupled to receive the second output signal, and an output node. And the feedback network is coupled between the second input node and the output node of the third stage. For example, where the first, second, and third stages are respective operational-transconductance-amplifier stages, such an amplifier may be suitable for low-power applications.

Abstract: An image processing apparatus according to one embodiment determines target resolutions of a plurality of source images based on a first horizontal direction size and a first vertical direction size which are a horizontal direction size and a vertical direction size of a backlight control unit of a first display, and a second horizontal direction size and a second vertical direction size which are a horizontal direction size and a vertical direction size of a backlight control unit of a second display, and converts the resolution of each of a plurality of source images such that the resolution of each of a plurality of source images becomes the target resolution.

Abstract: To correct a frequency deviation generated in an input signal to an analog filter according to the rotation of a rotor in a resolver, a resolver correction device includes a phase shifter which shifts the phase of a first phase signal of the resolver, with respect to the signals at least having two phases and more, detected by the resolver. The phase-shifted first phase signal and a second phase signal are added, as a phase modulation signal with the excitation signal modulated by a rotation angle of the rotor in the resolver. A phase difference correction signal is generated based on a phase difference between the phase modulation signal of the resolver and the excitation signal. The adjusting amount of the phase shifter is calculated based on the phase difference correction signal, in which the phase shifter adjusts a phase shift amount according to the adjusting amount.

Abstract: The present embodiments relate generally to power controllers, and more particularly to synthetic current hysteretic control of a buck-boost DC-DC controller. In one or more embodiments, a controller includes PFM-PWM and Buck-Boost transitions with minimal circuitry and power consumption. In these and other embodiments, the controller includes a low-Iq synthetic ripple generator for use in implementing hysteretic control of a buck-boost controller.

Abstract: When a program counter value during execution of a target program is an execution start address or less or is larger than the execution start address and is equal to or larger than minimum address among a plurality of addresses associated with a plurality of break points, a break circuit interrupts an execution of the target program, and during the interruption of the execution of the target program, and when the program counter value does not match with anyone of the plurality of break points, a debug control unit sets the program counter value as the execution start address to a first register, sets to a second register an address that is larger than the program counter value and is minimum among the plurality of break points as the minimum address, and resumes the execution of the target program from the execution start address.

Abstract: In a compression scan, the number of test steps is reduced without reducing a defection efficiency. A semiconductor apparatus includes one or more scan chains each including one or more MMSFFs being serially connected and combinational circuits and can switch between a scan shift operation and a capture operation. The MMSFF includes an MUX that selects one of an external input test signal which is externally input and a shift test signal which is input via the MMSFF in a preceding stage in the same scan chain, and an FF that outputs one of the external input test signal and the shift test signal which has been selected by the MUX.

Abstract: According to an embodiment, element models include a first transistor model, a second transistor model, and a variable resistor model. The first transistor model simulates a characteristic of a selection gate transistor whose channel resistance is changed by a selection gate voltage applied to a selection gate. The second transistor model simulates a characteristic of a memory gate transistor whose channel resistance is changed by a memory gate voltage applied to a memory gate. The variable resistor model has a resistance value which is changed in accordance with the selection gate voltage and the memory gate voltage and which is set to correspond to a gap region formed in a lower part of an insulating film insulating between the selection gate and the memory gate. The variable resistor model is provided between the first transistor model and the second transistor model.

Abstract: One or more of the present embodiments allows multiple controllers to be automatically configured as a single or multi-rail voltage regulator system using a local bus that can communicate between controllers with a minimal set of pinstraps. This allows the system to be configured with a reduced set of configuration pins and without the need for stored configurations in the controller's own memory or configurations performed by an external host.

Abstract: In manufacturing a trench type MOSFET, reliability of a semiconductor device is prevented from being degraded due to a short circuit or lowering of withstand voltage between a trench gate electrode and a source region. To achieve the above, poly-silicon films are formed inside a trench in a main surface of a semiconductor substrate and over the semiconductor substrate. Further, phosphorus is thermally diffused into each poly-silicon film from a phosphorous film over an upper surface of the poly-silicon film. Still further, a silicon oxide film formed in a surface layer of the poly-silicon film by the thermal diffusion process is removed by a first dry etching process using a fluorocarbon gas or a hydroxy-fluorocarbon gas. Then, by performing a second dry etching process using a Cl2 gas etc., an insulating film is exposed and, thereby, a trench gate electrode including the poly-silicon film is formed.

Abstract: The size of a multi-processor is prevented from increasing even when the number of processor cores is increased. The multi-processor includes a plurality of cores and a debugging control unit. At least one of the plurality of cores is a debugging core, the debugging core being connected to the debugging control unit so that the debugging control unit can refer to and update register information in the debugging core. The debugging control unit transfers register information in a first core to the debugging core, the first core being one of the plurality of cores and being a core to be debugged. The debugging core debugs a program by using the transferred register information, the program being executed in the first core.

Abstract: The present embodiments relate generally to power controllers, and more particularly to synthetic current hysteretic control of a buck-boost DC-DC controller. In one or more embodiments, a controller includes PFM-PWM and Buck-Boost transitions with minimal circuitry and power consumption. In these and other embodiments, a window comparator structure is provided that is capable of generating control signals for use in buck, boost and buck-boost modes of operation.

Abstract: An area of a semiconductor device having a FINFET can be reduced. The drain regions of an n-channel FINFET and a p-channel FINFET are extracted by two second local interconnects from a second Y gird between a gate electrode and a dummy gate adjacent thereto, to a third Y grid adjacent to the second Y gird. These second local interconnects are connected by a first local interconnect extending in the X direction in the third Y grid. According to such a cell layout, although the number of grids is increased by one because of the arrangement of the first local interconnect, the length in the X direction can be reduced. As a result, the cell area of the unit cell can be reduced while a space between the first and second local interconnects is secured.

Abstract: A reception unit (13) sequentially selects a plurality of sensor coils and receives a signal from a position indicator via the sensor coil that has been selected, and an operational circuit (14) detects, using an amplitude value and a phase value of the signal received by the reception unit (13) via each of the plurality of sensor coils, coordinates of a position indicated by the position indicator and a writing force of the position indicator. When the sensor (20) includes a sensor capacitor, a transmission unit (12) outputs a signal to the sensor capacitor, the reception unit (13) receives a signal generated at a connecting point between the sensor capacitor and the transmission unit (12), and the operational circuit (14) detects whether a touch key corresponding to the sensor capacitor has been touched using a phase value of the signal received by the reception unit (13).

Abstract: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.

Abstract: An electronic device has a first bus bar (conductor plate) connected to a first semiconductor device (semiconductor part) having a first power transistor; and a second bus bar (conductor plate) connected to a second semiconductor device (semiconductor part) having a second power transistor. The first and second bus bars have first portions facing each other with an insulating plate interposed therebetween and extending in a Z direction intersecting with an upper surface (main surface) of a board. The first bus bar has a second portion located between the first portion and a terminal (exposed portion) and extending in an X direction away from the second bus bar and a third portion located between the second portion and the terminal and extending in the X direction. An extension distance of the third portion in the Z direction is shorter than an extension distance of the second portion in the X direction.

Abstract: A semiconductor integrated circuit is described. A transmitter-receiver transmits and receives data to and from outside by a first external terminal and transmits a first control signal by a second external terminal. When another data is transmitted after the data is transmitted and when a data transmission interval from a time when the data is transmitted to a time when the another data is transmitted is equal to or smaller than a first threshold, the transmitter-receiver continuously outputs, from the first external terminal, a potential level of about ½of a potential level obtained by adding a first potential level and a second potential level, during the data transmission interval, and changes the second potential level of the first control signal to the first potential level when the data transmission interval exceeds the first threshold.

Abstract: A semiconductor device and a manufacturing method thereof according to the present invention include: a first pad electrode formed in an uppermost wiring layer of a multilayer wiring layer; a first insulating film formed on the first pad electrode; and a first organic insulating film formed over the first insulating film. Also, the semiconductor device and the manufacturing method thereof include: a barrier metal film formed on the first organic insulating film and connected to the first pad electrode; and a conductive film formed on the barrier metal film. Then, a second insulating film made of an inorganic material is formed on an upper surface of the first organic insulating film between the barrier metal film and the first organic insulating film.

Abstract: A semiconductor device includes a memory unit having a memory cell driven by a voltage applied from power supply lines VSS and VDD, and a memory unit potential controller for adjusting the potential of the voltage applied to the memory cell. The memory unit potential controller includes a first potential adjustment part provided between the power supply lines VSS and ARVSS, and a second potential adjustment part provided between the power supply lines VDD and ARVSS. Further, the memory unit potential controller adjusts the potential of the power supply line ARVSS based on a first current supplied between the power supply line VSS and a first end portion of the memory cell through the first potential adjustment part, and adjusts a second current supplied between the power supply lines VDD and ARVSS through the second potential adjustment part, in order to rapidly stabilize the potential applied to the memory cell.

Abstract: An object of the present invention is to provide a semiconductor device that can enhance the safety when feeding to a USB device. Provided is a semiconductor device including: a first power source circuit that generates an output voltage supplied to a USB device coupled to a USB connector; an abnormality detection circuit that determines the state of a supply route of the output voltage generated by the first power source circuit; and a control circuit that controls supply of the output voltage from the first power source circuit to the USB device on the basis of a determination result of the abnormality detection circuit.