Patents Assigned to RENESAS
  • Patent number: 9865604
    Abstract: A semiconductor device having a high degree of freedom of layout has a first part AR1, in which a plurality of p-type wells PW and n-type wells NW are alternately arranged to be adjacent to each other along an X-axis direction. A common power feeding region (ARP2) for the plurality of wells PW is arranged on one side so as to interpose the AR1 in a Y-axis direction, and a common power feeding region (ARN2) for the plurality of wells NW is arranged on the other side. In the power feeding region (ARP2) for the PW wells, a p+-type power-feeding diffusion layer P+(DFW) having an elongate shape extending in the X-axis direction is formed. A plurality of gate layers GT extending in the X-axis direction to cross the boundary between the PW and NW wells are arranged in the AR1, and a plurality of MIS transistors are correspondingly formed.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: January 9, 2018
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Ken Shibata, Yuta Yanagitani
  • Patent number: 9852349
    Abstract: A scanner system includes a pen-shaped scanner that scans a character strings that is one part of a sentence described in a paper book and generates and transmits sentence image data on the basis of the scanned character string, a storage unit that stores therein book image data that is higher in image quality than the sentence image data and is obtained by electronically imaging the sentence described in the paper book, and a matching unit that compares the book image data with the sentence image data that the pen-shaped scanner has transmitted and extracts partial image data that has been decide to match the sentence image data from the book image data.
    Type: Grant
    Filed: August 10, 2016
    Date of Patent: December 26, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Satoru Tomisawa, Koichi Nose, Shunsuke Okumura
  • Patent number: 9854295
    Abstract: A data processing device, includes a bus, a demultiplexer which receives content including video data and audio data. A memory interface is coupled to the bus, and is connectable to a memory for temporarily accumulating the video data and the audio data output from the demultiplexer.
    Type: Grant
    Filed: May 5, 2017
    Date of Patent: December 26, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Masami Tako, Naohiro Nishikawa, Yuichi Takagi
  • Patent number: 9853005
    Abstract: An improvement is achieved in the reliability of a semiconductor device. Over a semiconductor substrate, an interlayer insulating film is formed and, over the interlayer insulating film, a pad is formed. Over the interlayer insulating film, an insulating film is formed so as to cover the pad. In the insulating film, an opening is formed to expose a part of the pad. The pad is a pad to which a copper wire is to be electrically coupled and which includes an Al-containing conductive film containing aluminum as a main component. Over the Al-containing conductive film in a region overlapping the opening in plan view, a laminated film including a barrier conductor film, and a metal film over the barrier conductor film is formed. The metal film is in an uppermost layer. The barrier conductor film is a single-layer film or a laminated film including one or more layers of films selected from the group consisting of a Ti film, a TiN film, a Ta film, a TaN film, a W film, a WN film, a TiW film, and a TaW film.
    Type: Grant
    Filed: July 6, 2015
    Date of Patent: December 26, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Takehiko Maeda, Akira Yajima, Satoshi Itou, Fumiyoshi Kawashiro
  • Patent number: 9847410
    Abstract: A semiconductor device including an IGBT element having features of a low on-state voltage and a low turn-off loss is provided. The semiconductor device is comprised of a trench gate type IGBT element. The IGBT element includes: a plurality of gate trench electrodes to which gate potential is given; and a plurality of emitter trench electrodes to which emitter potential is given. Between adjacent trench electrodes, a contact to an emitter electrode layer is formed. In this regard, there is formed, in the semiconductor substrate, a P type floating region which is in contact with bottom portions of at least some of the emitter trench electrodes via an interlayer insulation layer.
    Type: Grant
    Filed: May 10, 2016
    Date of Patent: December 19, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Hitoshi Matsuura
  • Patent number: 9847325
    Abstract: In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: December 19, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Yoichiro Kurita, Masaya Kawano, Koji Soejima
  • Patent number: 9847417
    Abstract: A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate. Using the gate electrode as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the nMOS transistor, whereby the gate electrode is amorphized. Subsequently, a silicon oxide film is provided to cover the gate electrode, at a temperature which is less than the one at which recrystallization of the gate electrode occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode, and high tensile stress is applied to a channel region under the gate electrode. As a result, carrier mobility of the nMOS transistor is enhanced.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: December 19, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Hirokazu Sayama, Kazunobu Ohta, Hidekazu Oda, Kouhei Sugihara
  • Patent number: 9846788
    Abstract: To raise confidentiality of the value stored in the ROM, in an IC having a built-in or an externally-attached ROM storing a value (program and/or data) encrypted using a predetermined cryptographic key. The IC includes the ROM storing the encrypted value (program and/or data), a unique code generating unit, and a decrypting unit. The unique code generating unit generates a unique code specifically determined by production variation. The decrypting unit calculates a cryptographic key on the basis of the generated unique code and a correction parameter, and decrypts the encrypted value readout from the ROM by using the calculated cryptographic key. The correction parameter is preliminarily calculated outside the IC, on the basis of an initial unique code generated from the unique code generating unit immediately after production of the IC, and the predetermined cryptographic key used for encryption of the value to be stored in the ROM.
    Type: Grant
    Filed: June 26, 2014
    Date of Patent: December 19, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Daisuke Oshida
  • Patent number: 9846666
    Abstract: The present invention realizes a functional safety of a multiprocessor system without tightly coupling processor elements. When causing a plurality of processor elements to execute the same data processing and realizing a functional safety of the processor element, there is adopted a bus interface unit that performs control of performing safety measure processing when the non-coincidence of access requests issued from the processor elements has been fixed, and of starting access processing responding the access request when these access requests coincide with one another.
    Type: Grant
    Filed: February 13, 2015
    Date of Patent: December 19, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Kenji Kimura
  • Patent number: 9847226
    Abstract: The reliability of a semiconductor device is improved. In a manufacturing method, a film to be processed is formed over a circular semiconductor substrate, and a resist layer whose surface has a water-repellent property is formed thereover. Subsequently, the water-repellent property of the resist layer in the outer peripheral region of the circular semiconductor substrate is lowered by selectively performing first wafer edge exposure on the outer peripheral region of the semiconductor substrate, and then liquid immersion exposure is performed on the resist layer. Subsequently, second wafer edge exposure is performed on the outer peripheral region of the circular semiconductor substrate, and then the resist layer, on which the first wafer edge exposure, the liquid immersion exposure, and the second wafer edge exposure have been performed, is developed, so that the film to be processed is etched by using the developed resist layer.
    Type: Grant
    Filed: March 7, 2017
    Date of Patent: December 19, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Takuya Hagiwara
  • Patent number: 9847328
    Abstract: The improvement of the reliability of a semiconductor device having a split gate type MONOS memory is implemented. An ONO film and a second polysilicon film are sequentially formed so as to fill between a first polysilicon film and a dummy gate electrode. Then, the dummy gate electrode is removed. Then, the top surfaces of the first and second polysilicon films are polished, thereby to form a memory gate electrode formed of the second polysilicon film at the sidewall of a control gate electrode formed of the first polysilicon film via the ONO film. As a result, the memory gate electrode high in perpendicularity of the sidewall, and uniform in film thickness is formed.
    Type: Grant
    Filed: February 10, 2017
    Date of Patent: December 19, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Tatsuyoshi Mihara
  • Patent number: 9842908
    Abstract: A method of manufacturing a semiconductor device that includes a junction field effect transistor, the junction field effect transistor including a semiconductor substrate of a first conductivity type, an epitaxial layer of the first conductivity type formed on the semiconductor substrate, a source region of the first conductivity type formed on a surface of the epitaxial layer, a channel region of the first conductivity type formed in a lower layer of the source region, a pair of trenches formed in the epitaxial layer so as to sandwich the source region therebetween, and a pair of gate regions of a second conductivity type, opposite to the first conductivity type, formed below a bottom of the pair of trenches.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: December 12, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Kouichi Arai
  • Patent number: 9842878
    Abstract: A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.
    Type: Grant
    Filed: April 19, 2017
    Date of Patent: December 12, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Takashi Terada, Shinya Hori
  • Patent number: 9842943
    Abstract: Provided is a method for manufacturing a semiconductor device including a film to be treated having a high flatness. A semiconductor substrate having a surface and including a first region and a second region on the surface is prepared, the first region being a region in which a plurality of first level difference portions are formed, the second region being a region in which a plurality of second level difference portions arranged more sparsely than the plurality of first level difference portions are formed, or a region in which no level difference portion is formed. A photosensitive film is formed on a portion of the second region to surround a periphery of the first region as seen in plan view. An applied film having flowability is formed to cover the first region and the photosensitive film. A portion of the applied film at least on the first region is removed.
    Type: Grant
    Filed: August 22, 2016
    Date of Patent: December 12, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Daisuke Umeda
  • Patent number: 9843344
    Abstract: The present invention aims to provide a digital variable capacitance circuit, a resonant circuit, an amplification circuit, and a transmitter having a high performance. A digital variable capacitance circuit 50 according to this embodiment is a digital variable capacitance circuit including a plurality of unit capacity cells 51-0 to 51-n connected in parallel between two output terminals OUTP and OUTN, in which the unit capacity cell 51 comprises: a first capacitor Cu1 having one end connected to one output terminal OUTP; a second capacitor Cu2 that is connected in series with the first capacitor Cu1 between the two output terminals; and an NMOS transistor M1 that is connected in parallel with the second capacitor Cu2 and is controlled in accordance with a digital control signal.
    Type: Grant
    Filed: June 20, 2016
    Date of Patent: December 12, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Masakazu Mizokami
  • Patent number: 9841996
    Abstract: The scheduler performs thread scheduling of repeating processings of specifying each hardware thread included in a first group among the multiple hardware threads for the number of times set up in advance for the hardware thread, and of specifying any one of the hardware threads in a second group for the number of times set up in advance for the second group that includes other hardware threads. A thread waste counter is provided for each hardware thread in the first group and counts up each time a nondispatchable state occurs when the hardware thread is specified by the thread scheduling. When the hardware thread in the first group specified by the thread scheduling is nondispatchable, the scheduler performs rescheduling of respecifying the hardware thread in the second group instead of the hardware thread in the first group.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: December 12, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Junichi Sato, Koji Adachi, Yousuke Nakamura
  • Patent number: 9842877
    Abstract: A semiconductor device includes a semiconductor substrate, a photoelectric conversion element, a first isolation insulating film, and a current blocking region. The first isolation insulating film is formed around the photoelectric conversion element. The current blocking region is formed in a region between the photoelectric conversion element and the first isolation insulating film. The current blocking region includes an impurity diffusion layer, and a defect extension preventing layer disposed in contact with the impurity diffusion layer to form a twin with the impurity diffusion layer. The defect extension preventing layer has a different crystal structure from that of the impurity diffusion layer. At least a part of the current blocking region is disposed in contact with the first isolation insulating film.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: December 12, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Keiichi Itagaki
  • Patent number: 9842919
    Abstract: A linear active cell region is formed from a plurality of divided active cell regions arranged apart from each other in a second direction (y direction). The linear hole collector cell region is formed from a plurality of divided hole collector cell regions arranged apart from each other in the second direction (y direction). A P-type floating region is formed in a semiconductor substrate between the linear active cell region and the linear hole collector cell region adjacent to each other in a first direction (x direction), between the divided active cell regions adjacent to each other in the second direction (y direction), and between the divided hole collector cell regions adjacent to each other in the second direction (y direction).
    Type: Grant
    Filed: December 24, 2016
    Date of Patent: December 12, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Hitoshi Matsuura
  • Patent number: 9837519
    Abstract: The semiconductor device includes a trench that penetrates a barrier layer, and reaches a middle portion of a channel layer among an n+ layer, an n-type layer, a p-type layer, the channel layer, and the barrier layer which are formed above a substrate, a gate electrode arranged within the groove through a gate insulating film, and a source electrode and a drain electrode which are formed above the barrier layer on both sides of the gate electrode. The n-type layer and the drain electrode are electrically coupled by a connection portion that reaches the n+ layer. The p-type layer and the source electrode are electrically coupled by a connection portion that reaches the p-type layer. A diode including a p-type layer and an n-type layer is provided between the source electrode and the drain electrode, to thereby prevent the breaking of an element caused by an avalanche breakdown.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: December 5, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Tatsuo Nakayama, Hironobu Miyamoto, Yasuhiro Okamoto, Yoshinao Miura, Takashi Inoue
  • Patent number: 9835882
    Abstract: A low reflectance film with a second reflectance (50% or lower) lower than a first reflectance is formed between an optical directional coupler and a first-layer wiring with the first reflectance. Thus, even when the first-layer wiring is formed above the optical directional coupler, the influence of the light reflected by the first-layer wiring on the optical signal propagating through the first optical waveguide and the second optical waveguide of the optical directional coupler can be reduced. Accordingly, the first-layer wiring can be arranged above the optical directional coupler, and the restriction on the layout of the first-layer wiring is relaxed.
    Type: Grant
    Filed: May 11, 2016
    Date of Patent: December 5, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Hiroyuki Kunishima, Yasutaka Nakashiba, Masaru Wakabayashi, Shinichi Watanuki