Patents Assigned to Semiconductor Components Industries, L.L.C.
  • Patent number: 7564704
    Abstract: In one embodiment, a power supply controller is configured to switch a power switch of a power supply when a voltage across the switch is at a minimum value.
    Type: Grant
    Filed: December 5, 2006
    Date of Patent: July 21, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Antonin Rozsypal, Roman Stuler, Karel Ptacek
  • Patent number: 7564666
    Abstract: In one embodiment, a protection device is used to protect a circuit. The protection device has a maximum rated power dissipation that is less than a maximum rated power dissipation of the circuit that is being protected.
    Type: Grant
    Filed: May 2, 2006
    Date of Patent: July 21, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Alan R. Ball, Stephen P. Robb
  • Patent number: 7545134
    Abstract: In one embodiment, a power supply controller is configured to form a reference signal that has selectable values. The power supply controller is also configured to form a feed-forward signal in response to change in the value of the reference voltage and to use this feed-forward signal control the value of an output current.
    Type: Grant
    Filed: July 12, 2007
    Date of Patent: June 9, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventor: Paul J. Harriman
  • Patent number: 7541792
    Abstract: In one embodiment, a multi-channel power supply controller adjusts the value of an error signal to minimize overshoot and undershoot during load transients.
    Type: Grant
    Filed: October 31, 2006
    Date of Patent: June 2, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventor: Paul J. Harriman
  • Patent number: 7538370
    Abstract: In one embodiment, a semiconductor device comprises a semiconductor material having a first conductivity type with a body region of a second conductivity type disposed in the semiconductor material. The body region is adjacent a JFET region. A source region of the first conductivity type is disposed in the body region. A gate layer is disposed over the semiconductor material and has a first opening over the JFET region and a second opening over the body region.
    Type: Grant
    Filed: January 18, 2007
    Date of Patent: May 26, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Prasad Venkatraman, Irene S. Wan
  • Patent number: 7538395
    Abstract: In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: May 26, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Thomas Keena, Ki Chang, Francine Y. Robb, Mingjiao Liu, Ali Salih, John Michael Parsey, Jr., George Chang
  • Patent number: 7537970
    Abstract: In one embodiment, a transistor is formed to have a first current flow path to selectively conduct current in both directions through the transistor and to have a second current flow path to selectively conduct current in one direction.
    Type: Grant
    Filed: March 6, 2006
    Date of Patent: May 26, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Francine Y. Robb, Stephen P. Robb
  • Patent number: 7535276
    Abstract: In one embodiment, a PWM controller is configured to form a drive signal that has an operating frequency that varies around a center by a percentage of the center frequency.
    Type: Grant
    Filed: May 16, 2007
    Date of Patent: May 19, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Radim Mlcousek, Pavel Latal
  • Patent number: 7535265
    Abstract: In one embodiment, a zero crossing detector couples a plurality of comparators in parallel and operates at least a portion of the comparators at different time periods.
    Type: Grant
    Filed: October 20, 2004
    Date of Patent: May 19, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventor: Abdesselam Bayadroun
  • Patent number: 7528551
    Abstract: In one embodiment, an LED system is controlled to have a substantially unity power factor.
    Type: Grant
    Filed: February 26, 2007
    Date of Patent: May 5, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventor: Alan R. Ball
  • Patent number: 7521909
    Abstract: In one embodiment, a linear regulator is formed with a variable miller compensation circuit that varies a zero of the linear regulator proportionally to a load current supplied by the regulator.
    Type: Grant
    Filed: April 14, 2006
    Date of Patent: April 21, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Stephen W. Dow, Praveen Manapragada, David F. Moeller
  • Patent number: 7521985
    Abstract: A method and circuit for managing thermal performance of an integrated circuit. Temperature sensing circuits and a plurality of power FETs that are coupled together in parallel are manufactured from a semiconductor substrate. Each temperature sensing circuit monitors the temperature of the portion of the semiconductor substrate near or including a corresponding power FET. When the temperature of the semiconductor substrate near one or more of the power FETs reaches a predetermined value, the corresponding temperature sensing circuit reduces a voltage appearing on the gate of the power FET. The reduced voltage increases the on-resistance of the power FET and channels a portion of its current to others of the plurality of power FETs. The power FET continues operating but with a reduced current flow. When the temperature of the semiconductor substrate falls below the predetermined value, the gate voltage of the power FET is increased to its nominal value.
    Type: Grant
    Filed: July 1, 2005
    Date of Patent: April 21, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Alan R. Ball, Stephen P. Robb
  • Patent number: 7518185
    Abstract: A semiconductor component includes a semiconductor layer (110) having a trench (326). The trench has first and second sides. A portion (713) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode (540, 1240) in the trench. The semiconductor component further includes a channel region (120) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region (755) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.
    Type: Grant
    Filed: January 30, 2007
    Date of Patent: April 14, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Peyman Hadizad, Jina Shumate, Ali Salih
  • Patent number: 7515442
    Abstract: In one embodiment, a secondary side power supply controller is configured to enable a secondary side power switch independently of a state of a drive signal used to control a primary side of the power supply.
    Type: Grant
    Filed: May 27, 2005
    Date of Patent: April 7, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Frantisek Mikulenka, Roman Urban
  • Patent number: 7508641
    Abstract: In one embodiment, an in-rush limiter is configured to control an output voltage to increase at a rate that is independent of the load that is powered by the in-rush limiter.
    Type: Grant
    Filed: June 6, 2005
    Date of Patent: March 24, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Alan R. Ball, Stephen P. Robb
  • Patent number: 7508060
    Abstract: In one exemplary embodiment, a multi-chip semiconductor connector is utilized for forming a semiconductor package having a plurality of semiconductor die. The multi-chip semiconductor connector is utilized to mechanically attach the plurality of semiconductor die together and to provide electrical connection to the plurality of semiconductor die.
    Type: Grant
    Filed: September 24, 2007
    Date of Patent: March 24, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Francis J. Carney, Phillip Celaya, Joseph K. Fauty, James P. Letterman, Stephen St. Germain, Jay A. Yoder
  • Patent number: 7508183
    Abstract: In one embodiment, a power supply controller utilizes a plurality of reference signals that operate at different frequencies to form a switching signal that is suitable to control a power device to regulate an output voltage.
    Type: Grant
    Filed: July 21, 2005
    Date of Patent: March 24, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventor: Gang Chen
  • Patent number: 7501894
    Abstract: In one aspect, an operational amplifier is configured to form a quiescent current that is a ratio of a current of a current source of the operational amplifier and to provide a load current to a load that is not ratioed to the current of the current source.
    Type: Grant
    Filed: January 15, 2007
    Date of Patent: March 10, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventor: John D. Stone
  • Patent number: 7498195
    Abstract: In one exemplary embodiment, a multi-chip connector is formed to have a first conductive strip that is attached to a first semiconductor die and a second conductive strip that is attached to a second semiconductor die.
    Type: Grant
    Filed: February 12, 2007
    Date of Patent: March 3, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Francis J. Carney, Phillip Celaya, Joseph K. Fauty, James P. Letterman, Stephen St. Germain, Jay A. Yoder
  • Patent number: 7495323
    Abstract: In one embodiment, a semiconductor package structure includes a conductive bridge having coupling portions on opposing ends. A lead frame includes alignment or receiving features for receiving the coupling portions of the bridge. A semiconductor device is attached to both the conductive bridge and the lead frame, and is configured so that the coupling portions are on opposing sides of the semiconductor device.
    Type: Grant
    Filed: August 30, 2006
    Date of Patent: February 24, 2009
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Stephen St. Germain, Phillip Celaya, Roger Arbuthnot, Francis J. Carney