Patents Assigned to Semiconductor Components Industries, L.L.C.
  • Circuit and method for reducing electromagnetic interference
    Patent number: 7342528
    Abstract: A spread spectrum system having a self-oscillating delay-line digital pulse width modulator and a method for mitigating electromagnetic interference. The spread spectrum system has a pseudo-random pattern generator connected to a digital-to-analog converter, which in turn is connected to a linear regulator. The linear regulator receives a reference voltage from the digital-to-analog converter and creates a frequency varying voltage that serves as an input voltage for delay elements of a delay-line based digital pulse width modulator. In response to frequency varying input signal, the delay-line based digital pulse width modulator generates a frequency varying voltage that is input to a switching network to vary its switching frequency.
    Type: Grant
    Filed: June 15, 2006
    Date of Patent: March 11, 2008
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Wai Tung Ng, Olivier Trescases
  • Thyristor and method of manufacture
    Patent number: 7339203
    Abstract: A thyristor and a method for manufacturing the thyristor that includes a gate region extending from the first major surface into a semiconductor substrate and an anode region extending from the second major surface into the semiconductor substrate. A cathode region extends into a portion of the gate region. Optionally, enhanced doped regions extend into the gate and anode regions. A mesa structure having a height HG is formed from the first major surface and a mesa structure having a height HA is formed from the second major surface. The gate region extends under the first major surface of the semiconductor substrate and it extends vertically into the semiconductor substrate a distance that is greater than height HG. The anode region extends under the second major surface of the semiconductor substrate and it extends vertically into the semiconductor substrate a distance that is greater than height HA.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: March 4, 2008
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Emmanuel Saucedo-Flores, David M. Culbertson
  • Method of forming a power supply controller and device therefor
    Patent number: 7321499
    Abstract: In one embodiment, a power supply controller uses a ramp signal to form current sense ramp compensation.
    Type: Grant
    Filed: November 2, 2005
    Date of Patent: January 22, 2008
    Assignee: Semiconductor Components Industries, L L C
    Inventors: Josef Halamik, Radim Mlcousek, Pavel Londak
  • Encapsulated electronic device structure
    Patent number: 7319266
    Abstract: In one embodiment, an electronic device package (1) includes a leadframe (2) with a flag (3). An electronic chip (8) is attached to the flag (3) with a die attach layer (9). A trench (16) having curved sidewalls is formed in the flag (3) in proximity to the electronic chip (8) and surrounds the periphery of the chip (8). An encapsulating layer (19) covers the chip (8), portions of the flag (3), and at least a portion of the curved trench (16). The curved trench (16) reduces the spread of die attach material across the flag (3) during chip attachment, which reduces chip and package cracking problems, and improves the adhesion of encapsulating layer (19). The shape of the curved trench (16) prevents flow of die attach material into the curved trench (16), which allows the encapsulating layer (19) to adhere to the surface of the curved trench (16).
    Type: Grant
    Filed: December 19, 2005
    Date of Patent: January 15, 2008
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Stephen St. Germain, Michael J. Seddon
  • Method of Forming a Current Sense Circuit and Structure Therefor
    Publication number: 20070296483
    Abstract: In one embodiment, a current sense circuit is formed with a pair of series connected switches that are used to steer a load current and form a current sense signal.
    Type: Application
    Filed: September 9, 2005
    Publication date: December 27, 2007
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C.
    Inventor: Hubert Grandry
  • High voltage sensor device and method therefor
    Patent number: 7306999
    Abstract: In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element.
    Type: Grant
    Filed: January 25, 2005
    Date of Patent: December 11, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Jefferson W. Hall, Mohammed Tanvir Quddus
  • Method for nullifying temperature dependence and circuit therefor
    Patent number: 7307476
    Abstract: A circuit and a method for nullifying temperature dependence of a circuit characteristic. The circuit includes a plurality of transistors configured such that they generate a gate voltage that includes a threshold voltage as a component. The gate voltage is applied to a transistor to generate a current that is proportional to a process transconductance parameter. The current is applied to a comparator having a differential pair of transistors, wherein each transistor has a process transconductance parameter. The circuit takes the ratios of the process transconductance parameter associated with the current to that of each transistor of the differential pair. By rationing the process transconductance parameters, temperature dependence is nullified or negated. The ratios can be used to set the hysteresis voltage of the comparator.
    Type: Grant
    Filed: February 17, 2006
    Date of Patent: December 11, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Senpeng Sheng, John D. Stone
  • Method of forming a self-aligned transistor
    Patent number: 7300850
    Abstract: In one embodiment, a transistor is formed to use two conductors to make electrical connection to one of the active regions of the transistor.
    Type: Grant
    Filed: September 30, 2005
    Date of Patent: November 27, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventor: Gordon M. Grivna
  • Multi-chip semiconductor connector assemblies
    Patent number: 7298034
    Abstract: In one exemplary embodiment, a multi-chip semiconductor connector is utilized for forming a semiconductor package having a plurality of semiconductor die. The multi-chip semiconductor connector is utilized to mechanically attach the plurality of semiconductor die together and to provide electrical connection to the plurality of semiconductor die.
    Type: Grant
    Filed: June 28, 2004
    Date of Patent: November 20, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Francis J. Carney, Phillip Celaya, Joseph K. Fauty, James P. Letterman, Stephen St. Germain, Jay A. Yoder
  • Bi-directional transistor and method therefor
    Patent number: 7297603
    Abstract: In one embodiment, a transistor is formed to conduct current in both directions through the transistor.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: November 20, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Stephen P. Robb, Francine Y. Robb, Robert F. Hightower
  • PWM regulator with discontinuous mode and method therefor
    Patent number: 7298124
    Abstract: In one embodiment, a power supply controller has a variable frequency oscillator that is used for controlling a PWM controller. The power supply controller varies a frequency of the variable frequency oscillator.
    Type: Grant
    Filed: December 1, 2004
    Date of Patent: November 20, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Kwok Kei Toby Kan, Tak Ming Leung
  • Method of forming a reference voltage and structure therefor
    Patent number: 7285943
    Abstract: A selected bandgap reference (11) of a voltage generator (10) is operated at a duty cycle that is less than one hundred percent. The seclectable bandgap reference (11) has at a high current consumption when enabled and a low current consumption when disabled. The output voltage of the selectable bandgap reference (11) is stored on a storage element (13) when the selectable bandgap reference (11) is enabled. A high impedance amplifier (16) receives the stored voltage and generates the reference voltage.
    Type: Grant
    Filed: April 18, 2003
    Date of Patent: October 23, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventor: Paolo Migliavacca
  • Superjunction semiconductor device structure
    Patent number: 7285823
    Abstract: In one embodiment, a charge compensation region is formed in a body of semiconductor material. A conductive layer is coupled to the charge compensation layer. In a further embodiment, the charge compensation region comprises a trench filled with opposite conductivity type semiconductor layers.
    Type: Grant
    Filed: February 15, 2005
    Date of Patent: October 23, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Gary H. Loechelt, Peter J. Zdebel, Gordon M. Grivna
  • Output amplifier structure with bias compensation
    Patent number: 7279983
    Abstract: In one embodiment, an output transistor and a bias compensation device are placed in proximity to each other on the same package substrate. The bias compensation device is electrically isolated but thermally coupled to the output transistor, and is configured to provide a output signal for adjusting bias to the output transistor.
    Type: Grant
    Filed: November 18, 2005
    Date of Patent: October 9, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventor: Mark J. Busier
  • Schottky diode and method of manufacture
    Patent number: 7279390
    Abstract: A Schottky diode capable of sustaining a breakdown voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer disposed on a semiconductor substrate has a thickness of at least about 15 micrometers and an impurity concentration ranging from about 1×1014 atoms per cubic centimeter to about 1×1015 atoms per cubic centimeter. A guard ring extends from about 3 micrometers to about 15 micrometers into the epitaxial layer. A dielectric material is formed over the epitaxial layer and a portion of the dielectric material is removed to expose a portion of the guard ring and a portion of the epitaxial layer within the guard ring. An electrically conductive material is formed over the exposed portion of the epitaxial layer and an electrically conductive material is formed in contact with a bottom surface of the semiconductor substrate.
    Type: Grant
    Filed: March 21, 2005
    Date of Patent: October 9, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Mark Duskin, Blanca Estela Kruse
  • Semiconductor device having screening electrode and method
    Patent number: 7276747
    Abstract: In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a screening electrode spaced apart from a channel region.
    Type: Grant
    Filed: April 25, 2005
    Date of Patent: October 2, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Gary H. Loechelt, Peter J. Zdebel
  • Semiconductor structure with improved on resistance and breakdown voltage performance
    Patent number: 7276766
    Abstract: A lateral FET cell is formed in a body of semiconductor material. The lateral FET cell includes a super junction structure formed in a drift region between a drain contact and a body region. The super junction structure includes a plurality of spaced apart filled trenches bounding in part a multiplicity of striped doped regions having opposite or alternating conductivity types.
    Type: Grant
    Filed: August 1, 2005
    Date of Patent: October 2, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Shanghui Larry Tu, James Adams, Mohammed Quddus, Rajesh S. Nair
  • Semiconductor device and method of providing regions of low substrate capacitance
    Patent number: 7276425
    Abstract: A semiconductor device (2) includes a semiconductor substrate (12) having a surface (13) formed with a first recessed region (20). A first dielectric material (60) is deposited in the first recessed region and formed with a second recessed region (76), and a second dielectric material (100) is grown over the first dielectric material to seal the second recessed region.
    Type: Grant
    Filed: November 25, 2005
    Date of Patent: October 2, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Guy E. Averett, Keith G. Kamekona, Sudhama C. Shastri, Weizhong Cai, Gordon L. Bratten, Bladimiro Ruiz, Jr.
  • Semiconductor device and method of producing high contrast identification mark
    Patent number: 7265454
    Abstract: A semiconductor device (50) includes a semiconductor die (20) having a first surface (14) for forming electronic circuitry. A coating layer (16) formed on a second surface (15) of the semiconductor die has a color that contrasts with the color of the semiconductor die. The coating layer is patterned to expose a portion of the second surface to reveal information pertaining to the semiconductor device. The coating layer is patterned by directing a radiation beam (30) such as a laser to selectively remove material from the coating layer.
    Type: Grant
    Filed: September 25, 2006
    Date of Patent: September 4, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Michael Seddon, Francis Carney
  • Integrated semiconductor inductor and method therefor
    Patent number: 7262681
    Abstract: In one embodiment, a multi-layer inductor is formed overlying a semiconductor substrate.
    Type: Grant
    Filed: February 11, 2005
    Date of Patent: August 28, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventor: Ryan J. Hurley