Abstract: The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for dynamically updating an optimization read voltage (RV) table. The method includes: obtaining a data-read transaction and replying with the data-read transaction to a host side after listening to a first request for read-performance data, which is issued by the host side, thereby enabling the data-performance transaction to be used in an update of the optimization RV table for a designated memory-cell type; and programming multiple records of an updated optimization RV table for the designated memory-cell type into a designated location of the NAND-flash module after listening to a second request for updating the optimization RV table for the designated memory-cell type, which is issued by the host side. The data-read transaction includes a current environmental parameter of a NAND-flash module, the designated memory-cell type and a bit error rate (BER).

Abstract: A flash memory method includes: classifying data into a plurality of groups of data; respectively executing error code encoding to generate first corresponding parity check code to store the groups of data and first corresponding parity check code into flash memory module as first blocks; reading out the groups of data from first blocks; executing error correction and de-randomize operation upon read out data to generate de-randomized data; executing randomize operation upon de-randomized data according to a set of seeds to generate randomized data; performing error code encoding upon randomized data to generate second corresponding parity check code; and, storing randomized data and second corresponding parity check code into flash memory module as second block; a cell of first block is used for storing data of first bit number which is different from second bit number corresponding to a cell of second block.

Abstract: The invention introduces a method for scheduling and executing host data-update commands. A first queue and a second queue are provided. The first queue includes first host data-update commands each including a first logical address. The second queue includes second host data-update commands each including a second logical address. A third host data-update command including a third logical address is generated and is labeled as a first type of host data-update command according to a host command received from a host side. All the first host data-update commands of the first queue are popped out and executed in response that the third logical address is the same as any first logical address. All the second host data-update commands of the second queue are popped out and executed in response that the third logical address is the same as any second logical address.

Abstract: The present invention provides a control method of the memory device. In the operation of the memory device, the soft information is compressed by a control circuit within the flash memory module, so that the second readout information including the compressed soft information transmitted by the flash memory module has much smaller data size. Therefore, the performance of the memory interface will not be affected due to the bandwidth occupied by the soft information transmission.

Abstract: A method of a storage device controller includes: using an interface circuit for receiving and storing different write address information of different write command signals sent from a host device, the different write address information being out of sequence; and, using multiple processor cores to rearrange the different write address information in sequence and then write data into at least one storage zone according to the different write address information rearranged in sequence.

Abstract: The invention introduces a method for performing operations to namespaces of a flash memory device, by a processing unit of a storage device, at least including the steps: receiving a cross-namespace data-movement command from a host, requesting to move user data of a first logical address of a first namespace to a second logical address of a second namespace; cutting first physical address information corresponding to the first logical address of a first logical-physical mapping table corresponding to the first namespace; and storing the first physical address information in an entry corresponding to a second logical address of a second logical-physical mapping table corresponding to the second namespace.

Abstract: The present invention provides a method performed by a secure digital (SD) card supporting both an SD mode and a peripheral component interconnect express (PCIe) mode for initializing the SD card. The method includes: (a) after receiving a first supply voltage through a first voltage supply pin from a host coupled to the SD card, entering the SD mode if the SD card is not in the PCIe mode and a CMD0 command for entering the SD mode is received through a command pin from the host coupled to the SD card; and (b) after receiving the first supply voltage through the first voltage supply pin from the host coupled to the SD card, performing a PCIe linkup process if the SD card is not in the SD mode and a second supply voltage is received through a second voltage supply pin from the host coupled to the SD card. The SD card enters the PCIe mode if the PCIe linkup process succeeds.

Abstract: A method for evaluating a margin of at least one parameter utilized by a transmission interface includes: step (A) setting a value of a first parameter utilized by a host device to a first test value selected from a first group; (B) setting a value of a second parameter utilized by a data storage device to a second test value selected from a second group; (C) controlling the data storage device to perform a predetermined testing procedure to test whether the data storage device functions normally when the first test value and the second test value are applied; and (D) changing the first test value or the second test value and re-performing steps (A) to (C), wherein step (D) is repeatedly performed until all the test values in the first group and the second group have been tested.

Abstract: A data programming method for a flash memory includes: writing a write data to a page buffer of the flash memory; encoding the write data to generate first parity data corresponding to the write data, and writing the first parity data to the page buffer; while generating the first parity data, performing an error detection based on the write data and the first parity data to produce an error detection result; and when the error detection result indicates that there is no error in the first parity data, issuing a program command to the flash memory to program the write data and the first parity data in the page buffer into a flash memory element of the flash memory.

Abstract: A data storage device includes a memory device and a memory controller. The memory controller uses a first predetermined memory block as a buffer to receive data from a host device. In response to a write command received from the host device, the memory controller determines a sub-region corresponding to the write command, determines whether the sub-region is a hot-write sub-region according to a write count corresponding to the sub-region and accordingly determines whether to use a second predetermined memory block as another buffer to receive data from the host device. When the memory controller determines that the sub-region corresponding to the write command is a hot-write sub-region, the memory controller writes the data into the second predetermined memory block. When the memory controller determines that the sub-region is not a hot-write sub-region, the memory controller writes the data into the first predetermined memory block.

Abstract: The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for reading data with an optimization read voltage (RV) table. The method includes: determining one set of RVs for a designated memory-cell type according to a current environmental parameter of a NAND-flash module and content of the optimization RV table; and reading data on a page corresponding to the designated memory-cell type from the NAND-flash module with the set of RVs. The optimization RV table includes multiple records and each record includes one set of RV parameters and an environmental parameter associated with the set of RV parameters.

Abstract: The invention introduces a method for scheduling and executing host data-update commands. A first queue and a second queue are provided. The first queue includes first host data-update commands each including a first logical address. The second queue includes second host data-update commands each including a second logical address. A third host data-update command including a third logical address is generated and is labeled as a first type of host data-update command according to a host command received from a host side. A redundant first logical address is removed from a matched one of the first host data-update commands in response that the third logical address is the same as any first logical address. A redundant second logical address is removed from a matched one of the second host data-update commands in response that the third logical address is the same as any second logical address.

Abstract: A method for performing storage space management of a memory device with aid of dynamic block configuration includes: configuring at least one portion of blocks among a plurality of blocks to be multiple first blocks in a first region and multiple second blocks in a second region according to a first reserved block threshold; combining the multiple first blocks into a set of first superblocks in the first region; and combining at least one portion of second blocks among the multiple second blocks into a set of second superblocks in the second region, wherein the first reserved block threshold is less than a minimum non-damaged block count among respective non-damaged block counts of a plurality planes, for a memory controller to increase available storage capacity by increasing a ratio of a size of the second region to a size of the first region.

Abstract: A method used in a flash memory controller includes: using an error correction code (ECC) circuit to perform an ECC operation upon data of a block of a flash memory chip/die of a flash memory device to generate an ECC result; when the ECC result indicates a failure, storing an access task corresponding to the block into a specific buffer; and, controlling a voltage generator of the flash memory device through a specific communication interface to control at least one address decoder of the flash memory device to access the block of the flash memory chip/die again according to at least one threshold voltage level of the voltage generator after the access task has been temporarily stored in the specific buffer for a specific default time.

Abstract: A method for performing access control of a memory device with aid of interrupt management includes: utilizing a memory controller to receive a set of commands from a host device through a transmission interface circuit of the memory controller; and in response to the set of commands, utilizing the memory controller to perform a set of accessing operations upon a non-volatile (NV) memory for the host device, and return a single message-signaled interrupt (MSI) corresponding to the set of commands to the host device through the transmission interface circuit, for notifying the host device of completion of device side access control of the memory device regarding the set of commands, to allow the host device to complete host side access control of the host device regarding the set of commands.

Abstract: A method for performing garbage collection (GC) management of a memory device with aid of dedicated information control and associated apparatus are provided. The method may include: receiving at least one first command, and performing at least one accessing operation on a non-volatile (NV) memory according to the at least one first command; and executing a GC procedure to start performing GC on the NV memory, for example: dividing a memory region of a volatile memory into multiple sub-regions to be multiple dedicated memory regions; selecting multiple source blocks; comparing address mapping tables to generate and store valid-data location information in the multiple dedicated memory regions, respectively; and performing multiple GC operations according to the valid-data location information respectively stored in the multiple dedicated memory regions.

Abstract: A flash memory scheme simplifies the command sequences transmitted between a flash memory device and a flash memory controller into a simplified command sequence so as to reduce the waiting time period of the command transmission and improve the performance of flash memory.

Abstract: An exemplary method for reading data stored in a flash memory includes: selecting an initial gate voltage combination from a plurality of predetermined gate voltage combination options; controlling a plurality of memory units in the flash memory according to the initial gate voltage combination, and reading a plurality of bit sequences; performing a codeword error correction upon the plurality of bit sequences, and determining if the codeword error correction successful; if the codeword error correction is not successful, determining an electric charge distribution parameter; determining a target gate voltage combination corresponding to the electric charge distribution parameter by using a look-up table; and controlling the plurality of memory units to read a plurality of updated bit sequences according to the target gate voltage combination.

Abstract: The invention provides a method for accessing a flash memory module, wherein the method includes the steps of: classifying multiple read retry tables into at least a first group and a second group to establish a classifying and sorting table, wherein each of the multiple read retry tables records at least one reading voltage, and any two read retry tables do not have exactly the same reading voltage; selecting a first read retry table from the first group to read a page of a block of the flash memory module to generate first read data; and when a decoder fails to decode the first read data, selecting a second read retry table from the first group to read the page of the block of the flash memory module to generate second read data for the decoder to decode.

Abstract: A flash memory controller is used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface and includes an input/output (I/O) circuit and a processor. The I/O circuit is coupled to the flash memory device through the specific communication interface, and used for sending commands and data between the flash memory device and the processor. The processor is used for controlling the I/O circuit sending a specific boundary check command signal or a specific boundary check set-feature signal via the specific communication interface to the flash memory device, to make the flash memory device read out more page data of multiple page units from a specific block in the memory cell array and to make the flash memory device determine whether the multiple page units are empty pages.