Abstract: An electronic device includes a functional circuit, a test mode circuit, and a verification circuit. The verification circuit generates and outputs the test waveform signals into the test mode circuit based on a clock signal provided from the test mode circuit, receives test result waveform signals from the test mode circuit when at least one test operation corresponding to the test pattern signal is performed, and compares the test result waveform signals with target result waveform signals to generate and output a failure result signal into the test mode circuit; the failure result signal is used to indicate whether at least one test bit failure occurs.

Abstract: An input/output (I/O) interface circuit, disposed within a flash memory controller and to be coupled to a flash memory externally coupled to the flash memory controller through an I/O signal port of the flash memory controller, includes a transmission and on-die termination circuit operating as either an output driving stage circuit or an input on-die termination stage circuit. The transmission and on-die termination circuit operates as the output driving stage circuit to transfer and drive a transmission signal, sent from the processor circuit of the flash memory controller, to the flash memory through the I/O signal port. The transmission and on-die termination circuit operates as the input on-die termination stage circuit for generating and providing a matching termination resistance for the I/O signal port.

Abstract: A method for reading data from a flash memory is provided. The method comprises: determining whether a host device is requesting a sequential read access to the flash memory; prior to receiving a first host read command issued by the host device, performing a read-ahead operation to read data from the flash memory according to a read-ahead start logical block address (LBA) if the host device is requesting the sequential read access to the flash memory; and storing the data that is read through the read-ahead operation in a read-ahead buffer; and in response to receiving a first host read command issued by the host device, sending a portion or all of data that is read through the read-ahead operation to the host device if a start LBA of the first host read command corresponds to one of start LBAs of data that is stored in the read-ahead buffer.

Abstract: A method forming a semiconductor package device includes: providing a substrate; forming a flip chip die on a first side on the substrate; and forming a molding compound on the first side of the substrate. The molding compound covers the flip chip die. The method further includes forming a heat sink on the molding compound; and forming a taping layer on a second side of the substrate, wherein the second side is opposite from the first side in a vertical direction. After forming the taping layer, the method further includes performing a pre-cut process and an etching process on the heat sink; and removing the taping layer.

Abstract: An interface circuit includes a signal processing circuit including multiple signal processing devices and a monitor and calibration module. The monitor and calibration module includes multiple monitor circuits, a processor and a calibration circuit. The monitor circuits monitor at least one of an amplitude, a frequency and a jitter in at least one of a reception signal and a transmission signal to correspondingly generate a monitored result and monitor at least one of power supplying voltage and ground voltage to correspondingly generate a monitored result. The processor collects the monitored results and determines a calibration operation based on the monitored results. The calibration circuit is coupled to the processor and at least one signal processing device and performs the calibration operation on the signal processing device to adjust a characteristic value of the signal processing device.

Abstract: Disclosed is a memory device with dual interface, test method and test system thereof. An initialization procedure is executed by the memory device with dual interface in a PCIe mode. A voltage level of a pin of the memory device with dual interface is altered according to the initialization procedure, wherein the pin of the memory device with dual interface operates in a SD mode but not in PCIe mode. The voltage level of the pin of the memory device with dual interface is switched between a high voltage level and a low voltage level at a first frequency during a test stage of the initialization procedure. The voltage level of the pin of the memory device with dual interface is kept at the high voltage level or the low voltage level during a result display stage of the initialization procedure.

Abstract: A method for managing a memory apparatus including a non-volatile (NV) memory element having a plurality of physical blocks includes: obtaining a first host address and first data from a first access command; obtaining a second host address and second data from a second access command; linking the first host address to a first page of the physical block and the second host address to a second page of the physical block; storing the first data and second data into the physical block; building a valid page position table and storing the valid page position table in the volatile memory; and building a global page address linking table and storing the global page address linking table in the volatile memory. The valid page position table and the global page address linking table are loaded from the volatile memory and stored to the NV memory element at predetermined time periods.

Abstract: A method for performing mapping table management of a memory device in a predetermined communications architecture with aid of table analysis and associated apparatus are provided. The method may include: utilizing the memory controller to receive a first command from a host device through a transmission interface circuit of the memory controller; and in response to the first command, loading a local logical-to-physical (L2P) address mapping table from a non-volatile (NV) memory into a volatile memory within the memory controller to be a temporary L2P address mapping table, changing multiple L2P table entries in the temporary L2P address mapping table to be multiple updated L2P table entries in a group-by-group manner, rather than an entry-by-entry manner, and updating the local L2P address mapping table in the NV memory according to the multiple updated L2P table entries of the temporary L2P address mapping table.

Abstract: A method for accessing a flash memory module includes: selecting a block in the flash memory module; selecting a specific encoding/decoding setting from a plurality of sets of encoding/decoding settings at least according to an erase count of the block, wherein the plurality of sets of encoding/decoding settings include different error correction code (ECC) lengths, respectively; utilizing the specific encoding/decoding setting to encode a data to generate an encoded data; and writing the encoded data into the block.

Abstract: A method of a flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface includes: using a set-feature signal, which carries a set-feature command, a macro execution feature address, and corresponding macro execution parameter information, as a macro execution signal and transmitting the macro execution signal to the flash memory device to make the flash memory device execute multiple set-feature operations respectively having unique information defined by the corresponding macro execution parameter information carried in the macro execution signal.

Abstract: A data storage device includes a memory device and a memory controller. The memory controller uses a first predetermined memory block as a buffer to receive data from a host device. In response to a write command received from the host device, the memory controller determines a sub-region corresponding to the write command, determines whether the sub-region is a system data sub-region and accordingly determines whether to use a second predetermined memory block as another buffer to receive data from the host device. When the memory controller determines that the sub-region corresponding to the write command is a system data sub-region, the memory controller writes the data into the second predetermined memory block. When the memory controller determines that the sub-region corresponding to the write command is not a system data sub-region, the memory controller writes the data into the first predetermined memory block.

Abstract: A data storage device includes multiple storage modules. Each storage module includes a storage which having a memory device and a first memory controller and a second memory controller. The first memory controller is coupled to the memory device for accessing the memory device. The second memory controller is coupled to the storage for accessing the storage. The first memory controller includes a first transmission interface. The second memory controller includes a second transmission interface. The first memory controller and the second memory controller communicate with each other through the first transmission interface and the second transmission interface.

Abstract: A method of managing operation commands for a flash memory includes: providing a first command queue for receiving and storing a plurality of normal operation commands; providing at least one word line read (IWLR) command queue for receiving and storing a plurality of IWLR operation commands; issuing a lock state command between each two consecutive IWLR operation commands to the at least one second command queue; determining a selected command queue from the first command queue and the at least one IWLR command queues according to the lock state command; and delivering an operation command from the selected command queue to the flash memory.

Abstract: A method of a flash memory controller includes: controlling an I/O circuit using a set-feature signal, which carries a set-feature command, feature address, and parameter information, and transmitting the set-feature signal to a flash memory device; the feature address corresponds to a valid data portion or a dummy data portion following the valid data portion, and both the valid data potion and dummy data portion are comprised in a full page data which is to be written into a physical page unit of the flash memory device or to be read out from the physical page unit; the corresponding parameter information is used to record the valid data portion's column address and data length, the dummy data portion's column address and data length, the dummy data portion's column address and the valid data portion's column address, or the dummy data portion's data length and the valid data portion's data length.

Abstract: The present invention provides a storage device including a controller and methods for operating the storage device and the controller. A controller of a storage device may comprise: an interface controller; a memory controller; a processor configured to transmit downstream commands and upstream commands to the memory controller. The memory controller may be coupled between the interface controller and the processor and may comprise: a first command queue; a second command queue; and a racing handler.

Abstract: The present invention provides a method for accessing a secure digital (SD) card, which includes a voltage supply pin for receiving voltage supply from a host, at least one ground pin, a clock pin for receiving a clock signal from a host, a command pin for receiving a command from a host, and four data pins for writing data into the SD card or reading data from the SD card. The method includes receiving, via the command pin, an address extension command including a first address from a host, receiving, via the command pin, an access command including a second address from a host, and accessing, via the data pins, at least a memory location of the SD card indicated by a third address, which is a combination of the first address and the second address. The access command indicates an access operation to be performed on the SD card selected from: a single read operation, a single write operation, a multiple read operation, a multiple write operation and an erase operation.

Abstract: A method for performing data access control of a memory device with aid of a predetermined command and associated apparatus are provided. The method may include: utilizing the memory controller to receive a first single command from a host device through a transmission interface circuit of the memory controller; and in response to the first single command conforming to a predetermined format of the predetermined command, utilizing the memory controller to perform a series of operations according to the first single command, wherein the first single command represents a first migrate command, for migrating from a first source logical address to a first destination logical address. The series of operations may include: reading first data at the first source logical address; writing the first data at the first destination logical address; and controlling the memory device to make the first data at the first source logical address become invalid data.

Abstract: A method for use in a flash memory to handle host write commands includes: performing a dummy pattern detection while programing data into a specific section of a first block or a first super block of the flash memory; setting a dummy pattern indicator if all the data that is programmed to the specific section of the first block or the first super block of the flash memory corresponds to a predetermined dummy pattern; and in response to host write commands, modifying a host-to-flash (H2F) address mapping table regarding data that is requested by the host write commands to be programmed to a second block or a second super block of the flash memory without programming the data into the second super block or the second block to complete the host write commands if the dummy pattern indicator is set.

Abstract: A method of handling trim commands in a flash memory is provided. The method comprises: receiving a trim command; modifying logical-to-physical (L2P) address mapping entries of a L2P address mapping table according to the trim command; and storing trim information of the trim command into one of data blocks of the flash memory after modifying the L2P address mapping entries according to the trim command.

Abstract: A method for performing table management of a memory device in predetermined communications architecture with aid of system-region garbage collection (GC) and associated apparatus are provided. The method may include: utilizing the memory controller to perform a system-region GC procedure to manage at least one table regarding internal management of the memory device. The system-region GC procedure may include: reading a set of first table contents from a set of first table pages; and writing the set of first table contents into a set of first system-region-GC-processed table pages of the at least one table block, and writing a first RAID parity of the set of first table contents into a first parity page corresponding to the set of first system-region-GC-processed table pages in the at least one table block, in order to generate a first system-region-GC-processed table RAID protection group, for protecting the set of first system-region-GC-processed table pages.