Abstract: Dynamic error vector magnitude correction for radio-frequency amplifiers. In some embodiments, a radio-frequency amplification system can include an amplifier configured to receive an input signal through an input path and generate an amplified signal, a power adjustment component implemented along the input path and configured to adjust power of the input signal, and a control circuit configured to provide a control signal to the power adjustment component based on an operating condition associated with the amplifier, such that an impact of the operating condition on the amplifier is compensated by the adjusted power of the input signal.

Abstract: The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.

Abstract: Aspects of this disclosure relate to detecting power associated with an individual carrier of a carrier aggregated signal. In an embodiment, an aggregated carrier including at least a first carrier and a second carrier is provided. An indication of power of the first carrier of the aggregated carrier is detected. Separately from detecting the indication of power of the first carrier, an indication of power of the second carrier of the aggregated carrier is detected. The power associated with a radio frequency (RF) signal provided to an RF source associated with the first carrier can be adjusted based on the indication of power of the first carrier.

Abstract: Systems and methods for identifying potentially defective individual packaged modules are presented. A printed circuit board (PCB) having individual module substrates can be received. An image of the PCB is captured and a PCB recipe associated with the PCB is loaded. For each individual module substrate, a portion of the image corresponding to the individual module substrate is compared to the PCB recipe. It can be determined based on the comparison whether the individual module substrate matches the PCB recipe within a degree of tolerance. When an individual module substrate does not match the PCB recipe within the degree of tolerance, a location of the individual module substrate within a map of the PCB can be stored.

Abstract: Power amplification system with common base pre-amplifier. A power amplification system can include a common base amplifier configured to amplify an input radio-frequency (RF) signal received at an input node to generate an intermediate RF signal at an intermediate node. The power amplification system can further include a power amplifier configured to amplify the intermediate RF signal received at the intermediate node to generate an output RF signal at an output node.

Abstract: Aspects of this disclosure relate to an amplification circuit that includes a stacked amplifier and a bias circuit. The stacked amplifier includes at least a first transistor and a second transistor in series with each other. The stacked amplifier is operable in at least a first mode and a second mode. The bias circuit is configured to bias the second transistor to a linear region of operation in the first mode and to bias the second transistor as a switch in the second mode. In certain embodiments, the amplification circuit can be a power amplifier stage configured to receive a supply voltage that has a different voltage level in the first mode than in the second mode.

Abstract: Power amplification system is disclosed. A power amplification system can include a Class-E push-pull amplifier including a transformer balun. The power amplification can further include a reactance compensation circuit coupled to the transformer balun. In some embodiments, the reactance compensation circuit is configured to reduce variation over frequency of a fundamental load impedance of the power amplification system.

Abstract: Systems and methods are disclosed for fabricating a semiconductor die that includes one or more bipolar transistors disposed on or above a high-resistivity region of a substrate. The substrate may include, for example, bulk silicon, at least a portion of which has high-resistivity characteristics. For example, the bulk substrate may have a resistivity greater than 500 Ohm*cm, such as around 1 kOhm*cm. In certain embodiments, one or more of the bipolar devices are surrounded by a low-resistivity implant configured to reduce effects of harmonic and other interference.

Abstract: Apparatus and methods for filter bypass for radio frequency front-ends are provided. In certain configurations, filter connectivity of a front-end is changed as a function of automatic gain control (AGC) in a receive path. For example, lossy filtering can be bypassed when signal conditions and the surrounding interference environment allow. In certain implementations, an additional gain state is added to the AGC in the form of a bypass of the filtering. Thus, receiver gain and noise figure are greatly improved while the linearity and susceptibility to blockers is degraded.

Abstract: Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die.

Abstract: A switch bias control circuit includes a level shifter and voltage regulator circuitry configured to receive a voltage reference signal, provide a first voltage output at a first node and provide a second voltage output at a second node, the first node and the second node being at least partially isolated from one another. coupling circuitry couples the first node to the level shifter and couples the second node to a negative voltage generator.

Abstract: An electronic current mirror circuit particularly suitable for use in radio frequency (RF) and microwave power amplifiers. The electronic circuit includes a first current mirror circuit and a second current mirror circuit. The first current mirror circuit includes a first input circuit path and a first output circuit path, the first input circuit path is operated at a first supply voltage and the first output circuit path is operated at a second supply voltage. The second current mirror circuit includes a second input circuit path and a second output circuit path, the second input circuit path is operated at the second supply voltage, and the second output circuit path is connected to the first input circuit path so that variations in a current through the first output circuit path are compensated by a current in the second output circuit path.

Abstract: One aspect of this disclosure is a power amplifier module that includes a power amplifier die, a first bonding pad on a conductive trace, and a second bonding pad on a conductive trace. The die includes an on-die passive device and a power amplifier. The first bonding pad is electrically connected to the on-die passive device by a first wire bond. The second bonding pad is in a conductive path between the first bonding pad and a radio frequency output of the power amplifier module. The second bonding pad includes a nickel layer having a thickness that is less than 0.5 um, a palladium layer over the nickel layer, and a gold layer over the palladium layer and bonded to a second wire bond that is electrically connected to an output of the power amplifier. Other embodiments of the module are provided along with related methods and components thereof.

Abstract: A system for power amplifier over-voltage protection includes a power amplifier configured to receive a system voltage, a bias circuit configured to provide a bias signal to the power amplifier, and a power amplifier over-voltage circuit configured to interrupt the bias signal when the system voltage exceeds a predetermined value, while the system voltage remains coupled to the power amplifier.

Abstract: Wafers processed by methods of plasma etching are disclosed. In one embodiment, a wafer is prepared by a process including positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, focusing the plasma ions using a plasma focusing ring to increase a flux of plasma ions arriving at a surface of the wafer, and etching a plurality of through-wafer vias in the wafer.

Abstract: Surface-mount technology (SMT) devices and related methods. In some embodiments, an SMT device can include an electrical element and a plurality of terminals connected to the electrical element. The SMT device can further include a body configured to support the electrical element and the plurality of terminals. The body can have a rectangular cuboid shape with a length, a width, and a height that is greater than the width. The body can include a base plane configured to allow surface mounting of the SMT device. In some embodiments, the SMT device can be, for example, a capacitor, an inductor, or a resistor.

Abstract: Apparatus and methods for testing electronic devices. In some embodiments, a fixture for testing an electronic device can include a support frame including a base and a pair of side supports implemented on respective sides of the base, with at least one of the side supports including a plurality of features for mounting of a test hardware, and the base being configured to support a first test board. The fixture can further include an upper support positioned above the support frame and configured to support a second test board. The fixture can further include a suspension mechanism implemented to couple the upper support to the side supports such that the upper support is movable relative to the support frame to accommodate a misalignment between the upper support and the base.

Abstract: Apparatus and methods for overload protection of low noise amplifiers (LNAs) are provided herein. In certain configurations, an LNA system includes an input switch having an analog control input that controls an impedance of the input switch, an LNA that amplifies a radio frequency (RF) input signal received from the input switch, and an overload protection circuit that provides feedback to the input switch's analog control input based on detecting a signal level of the LNA. The overload protection circuit detects whether or not the LNA is overloaded. Additionally, when the overload protection circuit detects an overload condition, the overload protection circuit provides feedback to the analog control input of the switch to increase the impedance of the switch and reduce the magnitude of the RF input signal received by the LNA.

Abstract: Reduced power amplifier size through elimination of matching network. In some embodiments, a power amplification system can include a power amplifier (PA) configured to receive and amplify a radio-frequency (RF) signal. The power amplification system can further include a filter coupled to the PA and configured to condition the amplified RF signal. The PA can be further configured to drive approximately a characteristic load impedance of the filter. Such a configuration of the PA can be achieved by operating the PA with a high-voltage supply. Such a power amplification system can allow elimination of a matching network to, for example, reduce loss and device size.

Abstract: Apparatus and methods for envelope tracking systems are disclosed herein. In certain implementations, an envelope tracking system for generating a power amplifier supply voltage for a power amplifier is provided. The envelope tracking system includes a DC-to-DC converter that generates a regulated voltage from a battery voltage and controls a voltage of the regulated voltage using a low frequency feedback signal. The envelope tracking system further includes an error amplifier that generates an output current using an envelope signal and a high frequency feedback signal. The low frequency feedback signal is based on a low frequency component of the power amplifier supply voltage and the high frequency feedback signal is based on a high frequency component of the power amplifier supply voltage. The error amplifier generates the power amplifier supply voltage by adjusting the magnitude of the regulated voltage using the output current.