Abstract: A radio-frequency switch includes a series field-effect transistor, a shunt field-effect transistor having a gate node, and shunt arm control circuitry configured to receive an internal regulator voltage and provide the internal regulator voltage to the gate node of the shunt field-effect transistor when the radio-frequency switch is in a stand-by mode of operation.

Abstract: A surface acoustic wave (SAW) filter that receives an aggregate circuit and outputs two or more sub-signals on outputs each of a different frequency band. The sub-signals are amplified by low noise amplifiers and, in one implementation, the amplified sub-signals can be summed. The outputs are connected via a switched passive network so that portions of the sub-signals on the outputs that are not in the selected frequency band are at least partially terminated.

Abstract: Solder bumps are placed in direct contact with the silicon substrate of an amplifier integrated circuit having a flip chip configuration. A plurality of amplifier transistor arrays generate waste heat that promotes thermal run away of the amplifier if not directed out of the integrated circuit. The waste heat flows through the thermally conductive silicon substrate and out the solder bump to a heat-sinking plane of an interposer connected to the amplifier integrated circuit via the solder bumps.

Abstract: In some embodiments, an attenuator can include a first group of attenuation steps with each attenuation step being configured to switchably provide a first attenuation value, and a second group of attenuation steps with each attenuation step being configured to switchably provide a second attenuation value less than the first attenuation value. The attenuator can be capable of providing a total attenuation value from approximately zero to a sum of the attenuation steps of the first group and the second group in increments of the second attenuation value. With such a configuration, a glitch can have a maximum magnitude that is a difference between the first attenuation value and the second attenuation value during a change in the total attenuation value.

Abstract: Apparatus and methods for transmit power control in wireless communication systems are provided. In one aspect, a wireless communication system includes a transmit chain that generates a transmit signal based on a data signal having a time-varying signal envelope, a power amplifier that amplifies the transmit signal, and a transmit chain controller that generates a first power control signal and a second power control signal that control an adjustable power level of the transmit chain. The transmit chain controller includes an error extractor that generates an error signal based on comparing an output signal power of the power amplifier to the time-varying signal envelope. The transmit chain controller further includes a control signal generator that generates the first power control signal and an adjustment signal based on estimating the error signal, and that generates the second power control signal based on the error signal and the adjustment signal.

Abstract: Aspects of the present disclosure relate to determining a layout of a racetrack that forms part of a radio frequency (RF) isolation structure of a packaged module and forming the resulting RF isolation structures. Based on electromagnetic interference data for a module, an area of the module that is less sensitive to external radiation is identified. A racetrack layout can be determined based on identifying the area that is less sensitive to external radiation. The racetrack layout can include a narrowed section in the area that is less sensitive to external radiation or a break in the area that is less sensitive to external radiation.

Abstract: Feedback circuit for power amplifier. In some embodiments, a radio-frequency amplifier can include a bipolar junction transistor configured to amplify a signal, and having an input and an output. The radio-frequency amplifier can further include a feedback circuit implemented between the output and input of the bipolar junction transistor. The feedback circuit can include a parallel assembly of a field-effect transistor and a resistive element such that the resistive element is bypassed when the field-effect transistor is ON and an overall resistance of the feedback circuit includes the resistive element when the field-effect transistor is OFF. Such a feedback circuit can be configured to be capable of providing a plurality of resistance values between the output and input of the bipolar junction transistor to facilitate different gains of the bipolar junction transistor.

Abstract: Switching circuits for wireless applications. In some embodiments, a switching circuit can include a common node and a plurality of series arm switches with each being capable of connecting the common node and a respective signal node. The switching circuit can further include a shunt arm switch for each of the series arm switches. The shunt arm switch can be capable of connecting the signal node of the respective series arm switch to a ground. The switching circuit can further include a compensation circuit coupled to the common node and configured to compensate for a parasitic effect resulting from some or all of the series arm switches and the shunt arm switches.

Abstract: Carrier aggregation systems and methods are disclosed. In some embodiments, a radio-frequency circuit can include a first signal path configured to present an approximately zero impedance to a first out-of-band signal that is out of a first frequency band. The radio-frequency circuit can further include a coupling circuit coupled to the first signal path and configured such that the approximately zero impedance presented by the first signal path to the first out-of-band signal results in the first out-of-band signal being substantially excluded from the first signal path. The radio-frequency circuit can further include a second signal path configured to present an approximately zero impedance to a second out-of-band signal that is out of a second frequency band.

Abstract: A radio-frequency switch includes a first field-effect transistor disposed between a first node and a second node, the first field-effect transistor having a source, a drain, a gate, and a body. The switch further includes a coupling path connected between the body of the first field-effect transistor and the gate of the first field-effect transistor, the coupling path including a diode. The switch further includes an adjustable impedance network connected between the body of the first field-effect transistor and a ground reference, the adjustable impedance network being configured to reduce radio-frequency distortion in the first field-effect transistor.

Abstract: Switched-mode power supply with switch resizing. A power converter can include an inductor coupled between an input node and an intermediate node, a semiconductor device coupled between the intermediate node and an output node, and a plurality of drive transistors. Each one of the plurality of drive transistors can have a drain coupled to the intermediate node and a source coupled to a ground potential.

Abstract: According to some implementation, a charge pump includes a boost charge pump circuit and a buck charge pump circuit sharing a common flying capacitance. In some implementations, the boost pump circuit includes an input node and a boosted-voltage output node, and the buck charge pump circuit includes the input node and a divided-voltage output node. In some implementations, the charge pump of claim 3 wherein the boosted-voltage includes 2×Vin, and the divided-voltage includes Vin/2, Vin being an input voltage at the input node. In some implementations, the boost pump circuit further includes a first holding capacitance that couples the boosted-voltage output node to a ground. In some implementations, the buck pump circuit further includes a second holding capacitance that couples the divided-voltage output node to the ground.

Abstract: Circuits and methods related to switchless carrier aggregation in radio-frequency receivers. In some embodiments, a carrier aggregation (CA) circuit can include a first filter configured to allow operation in a first frequency band, and a second filter configured to allow operation in a second frequency band. The CA circuit can further include a first signal path implemented between the first filter and an output node, with the first signal path including a plurality of amplification stages configured to amplify a first radio-frequency (RF) signal. The first signal path can be substantially free of switches. The CA circuit can further include a second signal path implemented between the second filter and the output node, with the second signal path including a plurality of amplification stages configured to amplify a second RF signal. The second signal path can be substantially free of switches.

Abstract: A radio frequency switch circuit with improved harmonic suppression and low insertion loss has an antenna port and a plurality of signal ports. A plurality of transistor switch circuits, are connected to a respective one of the plurality of signal ports and to the antenna port. Each of the transistor switch circuits has a transistor, which in an off state, together with a harmonic suppression capacitor and a parallel inductor both connected thereto, define a tank circuit that suppresses RF signals applied to the corresponding transistor switch circuit from a different one of the transistor switch circuits. The harmonic suppression capacitor is tuned to distribute large signal voltage swings in the RF signal amongst parasitic diodes of the transistor.

Abstract: Various implementations enable management of parasitic capacitance and voltage handling of stacked integrated electronic devices. Some implementations include a radio frequency switch arrangement having a ground plane, a stack and a first solder bump. The stack is arranged in relation to the ground plane, and includes switching elements coupled in series with one another, and a first end of the stack includes a respective terminal of a first one of the plurality of switching elements. The first solder bump is coupled to the respective terminal of the first one of the plurality of switching elements such that at least a portion of the first solder bump overlaps with one or more of the plurality of switching elements, an overlap dimension set in relation to a first threshold value in order to set a respective contribution to a parasitic capacitance of the radio frequency switch arrangement.

Abstract: Disclosed herein are embodiments of an enhanced resonant frequency hexagonal ferrite material and methods of manufacturing. The hexagonal ferrite material can be Y-phase strontium hexagonal ferrite material. In some embodiments, sodium can be added into the crystal structure of the hexagonal ferrite material in order to achieve high resonance frequencies while maintaining high permeability.

Abstract: According to some implementation, a power amplifier includes a plurality of pairs of transistors, each pair of transistors including a common emitter transistor and a common base transistor arranged in a cascode configuration. The power amplifier further includes electrical connections implemented to connect the plurality of pairs in a parallel configuration between an input node and an output node. According to some implementations, the electrical connections are configured to distribute a collector current to all of the common base transistors to thereby reduce likelihood of damage to one or more common base transistors during a thermal run-away event.

Abstract: A radio frequency (RF) transmit-receive switch has an antenna port, first and second transmit differential ports and first and second receive differential ports. Transmit transistor switches are connected to the transmit differential ports. Primary and secondary windings of a transmit coupled inductor transformer are connected to the transmit transistor switches. Receive transistor switches are connected to the receive differential ports. Primary and secondary windings of a receive coupled inductor transformer are connected to the receive transistor switches. A first balun inductive winding is connected to the antenna port, and a second balun inductive winding is connected to the transistor switches.

Abstract: Disclosed are systems, devices and methods related to miniature probes that can be utilized for electrical and/or magnetic field strength measurements for areas that are smaller than an area of a radio-frequency (RF) module. In some embodiments, an electrical probe can be configured to include an unshielded inner conductor at an end of a coaxial assembly to allow an electrical field to induce differential-mode currents in the coaxial assembly. In some embodiments, a magnetic probe can be configured to include a loop connected to inner and outer conductors of a coaxial assembly to induce a common mode current by a change in magnetic field flux through the loop. In some implementations, such probes can be utilized to obtain near-field measurements to facilitate applications such as electromagnetic (EM) shielding designs.

Abstract: Devices and methods are disclosed, related to shielding and packaging of radio-frequency (RF) devices on substrates. In some embodiments, A radio-frequency (RF) module comprises a lead-frame package with a plurality of pins and at least one pin exposed from overmold compound. The module further includes a metal-based covering over a portion of the lead-frame package. Additionally, the metal-based covering can be in contact with the at least one pin.