Abstract: One or more embodiments are directed to a semiconductor package that includes transparent encapsulation material and an opaque encapsulation material. In one embodiment, the opaque encapsulation material is thicker than the transparent encapsulation material; however, the outer surfaces of the opaque and the transparent encapsulation materials are coplanar with each other.

Abstract: An integrated circuit of the BiCMOS type includes at least one vertical junction field-effect transistor. The vertical junction field-effect transistor is formed to include a channel region having a critical dimension of active surface that is controlled by photolithography. A gate region of the transistor is formed by two spaced apart first trenches in that are filled with a doped semiconductor material, wherein the two spaced apart first trenches bound the channel region and set the critical dimension.

Abstract: A semiconductor wafer includes first zones containing integrated circuits, each first zone including a substrate and a sealing ring at a periphery of the substrate. The first zones are separated from each other by second zones defining cutting lines or paths. The integrated circuit includes an electrically conductive fuse that extends between a first location inside the integrated circuit and a second location situated outside the integrated circuit beyond one of the cutting lines. This electrically conductive fuse includes a portion that passes through the sealing ring and another portion that straddles the adjacent cutting line. The portion of the fuse that passes through is electrically isolated from the sealing ring and from the substrate. The straddling portion is configured to be sliced, when cutting the wafer along the cutting line, so as to cause the fuse to change from an electrical on state to an electrical off state.

Abstract: An electronic component includes first and second separate semiconductor regions. A third semiconductor region is arranged under and between the first and second semiconductor regions. The first and third semiconductor regions define electrodes of a first diode. The second and third semiconductor regions define electrodes of a second diode. The first diode is an avalanche diode.

Abstract: A circuit for protecting against electrostatic discharges includes two avalanche circuit components having different turn-on delays with respect to a beginning of an electrostatic discharge. The two avalanche circuit components are coupled in parallel. The avalanche circuit component closer to an output node has a turn-on delay on the order of 30 ns, while the avalanche circuit component closer to an input node has a turn-on delay on the order of 1 ns.

Abstract: An RFID transponder includes a coding and modulation unit that generates a transmission signal by modulating an oscillator signal with an encoded bit signal. During a first and a second time segment, the encoded bit signal assumes a first and a second logic level, respectively. The transmission signal includes a first signal pulse having a first phase within the first time segment and a second signal pulse having a second phase that is shifted with respect to the first phase by a predefined phase difference within the second time segment. The transmission signal is paused for a pause period between the first and the second signal pulse. The pause period is shorter than a mean value of a period of the first time segment and a period of the second time segment.

Abstract: A semiconductor chip provides an optical medium for light propagation. The semiconductor chip includes a chip surface with an outer perimeter and a cavity in the chip surface. The cavity includes a peripheral wall and a bottom surface surrounded by the peripheral wall, the bottom surface adiabatically couplable to an optical waveguide. The cavity is located at an area of the chip surface spaced from the outer perimeter thereof.

Abstract: A method for a phase calibration in a frontend circuit of a near field communication (NFC) tag device is disclosed. An active load modulation signal is generated with a preconfigured value of a phase difference with respect to a reference signal of an NFC signal generator device. An amplitude of a test signal present at an antenna of the NFC tag device is measured. The test signal results from overlaying of the reference signal with the active load modulation signal. The following steps are repeated: modifying the value of the phase difference, providing the active load modulation signal with the modified value of the phase difference, measuring an amplitude of the test signal and comparing the measured amplitude with the previously measured amplitude until the measured amplitude fulfills a predefined condition. The value of the phase difference corresponding to the previously measured amplitude is stored.

Abstract: A semiconductor package that is a proximity sensor includes a light transmitting die, a light receiving die, an ambient light sensor, a cap, and a substrate. The light receiving die and the light transmitting die are coupled to the substrate. The cap is coupled to the substrate forming a first chamber around the light transmitting die and a second chamber around the light receiving die. The cap further includes a recess with contact pads. The ambient light sensor is mounted within the recess of the cap and coupled to the contact pads. The cap includes electrical traces that are coupled to the contact pads within the recess coupling the ambient light sensor to the substrate. By utilizing a cap with a recess containing contact pads, a proximity sensor can be formed in a single semiconductor package all while maintaining a compact size and reducing the manufacturing costs of proximity sensors.

Abstract: A low dropout voltage regulator unit includes an error amplifier and a power stage having an output terminal that is looped back onto the error amplifier and is capable of delivering an output current to a load. The unit includes multiple main supply inputs that are intended to potentially receive, respectively, multiple different supply voltages. The power stage includes multiple power paths that are connected, respectively, between the main supply inputs and the output terminal, are individually selectable and each comprise an output transistor. The unit also includes a selector circuit connected to the main supply inputs and configured to select one of the power paths according to a selection criterion. The error amplifier includes an output stage configured to selectively control the output transistor of the selected power path.

Abstract: A probe card for integrated circuit testing includes a printed circuit support and a probe head having a first surface mounted to a surface of the printed circuit support. A flexible substrate is positioned adjacent to a second surface of the probe head and includes at least one flexible extension which extends beyond an edge of the probe head and includes a bend to make contact with the surface of the printed circuit support. The flexible substrate further includes a test antenna configured to support a wireless communications channel with an integrated circuit under test. The integrated circuit under test includes at least one conductive structure that extends in the peripheral portion on different planes of metallizations to form an integrated antenna that is coupled for communication and/or power transfer to the test antenna.

Abstract: Disclosed herein is an electronic device having a substrate, and an integrated circuit disposed within the substrate and having a top surface. The integrated circuit may be a laser emitting integrated circuit or a reflected light detector. A first interconnect layer is formed on the top surface of the substrate. A first optically transparent layer is formed on the top surface of the substrate and covering the top surface of the integrated circuit. A second interconnect layer is formed on a top surface of the first optically transparent layer. The second interconnect layer is patterned so as to not obstruct light traveling to or from the top surface of the integrated circuit through the first optically transparent layer.

Abstract: A method and apparatus for controlling a power converter are provided. In the method and apparatus, switching from a first phase to a second phase is delayed until it is determined that both a tank current signal of the converter goes below a tank current threshold and the converter has been in the first phase for more than a first minimum time period. Then the converter determines if a resonant capacitor voltage has fallen below a first resonant capacitance voltage threshold and if a tank current signal goes above a tank current threshold. The converter switches from the first phase to the second phase in response to determining at least one of: the resonant capacitor voltage has fallen below the first resonant capacitance voltage threshold and the tank current signal goes above the tank current threshold. The converter is additionally operated in third and fourth states.

Abstract: An assembly is provided including one or more semiconductor dice attached on a substrate, the semiconductor die provided with electrically-conductive stud bumps opposite the substrate. The stud bumps embedded in a molding compound molded thereon are exposed to grinding thus leveling the molding compound to expose the distal ends of the stud bumps at a surface of the molding compound. Recessed electrically-conductive lines extending over said surface of the molding compound with electrically-conductive lands over the distal ends of the stud bumps. A further molding compound is provided to cover the recessed electrically-conductive lines and surrounding the electrically-conductive lands.

Abstract: A transistor includes a quasi-intrinsic region of a first conductivity type that is covered with an insulated gate. The quasi-intrinsic region extends between two first doped regions of a second conductivity type. A main electrode is provided on each of the two first doped regions. A second doped region of a second conductivity type is position in contact with the quasi-intrinsic region, but is electrically and physically separated by a distance from the two first doped regions. A control electrode is provided on the second doped region.

Abstract: An optical waveguide is configured to propagate a light signal. Metal vias are arranged along and on either side of a portion of the optical waveguide. Additional metal vias are further arranged along and on either side of the optical waveguide both upstream and downstream of the portion of the optical waveguide. The metal vias and additional metal vias are oriented orthogonal to a same plane, the same plane being orthogonal to a transverse cross-section of the portion of the optical waveguide.

Abstract: Disclosed is a method of locking a locked loop quickly, including receiving an input signal having an input frequency, and generating an intermediate signal having an intermediate frequency intended to be equal to a geometric mean of the input frequency and a desired frequency, but not equal. Results of division of the desired output frequency by the intermediate frequency are estimated, producing a first divider value. A first locked loop utilizing a controllable oscillator is activated. A divider value of the first locked loop is set to the first divider value, and the intermediate signal is provided to the first locked loop, so that when the first locked loop reaches lock, the controllable oscillator produces the desired frequency. When the first locked loop reaches lock, a second locked loop that utilizes the controllable oscillator is activated, the first locked loop is deactivated, and generation of the intermediate signal is ceased.

Abstract: Described herein is an electronic device that includes a first integrated circuit die having formed therein at least one photodiode and readout circuitry to convert charge generated by the at least one photodiode to a read voltage and to selectively output the read voltage. A second integrated circuit die is in a stacked arrangement with the first integrated circuit die and has formed therein storage circuitry to selectively transfer the read voltage to at least one storage capacitor for storage as a stored voltage and to selectively transfer the stored voltage to an output. The at least one storage capacitor is formed from a capacitive deep trench isolation. There is an interconnect between the first and second integrated circuit dies for coupling the readout circuitry to the storage circuitry.

Abstract: An optical waveguide termination device includes a waveguide and metal vias surrounding an end portion of the waveguide. The end portion of the waveguide has a transverse cross-sectional area that decreases towards its distal end. The metal vias are orthogonal to a same plane, with the same plane being orthogonal to the transverse cross-section. The metal vias absorb light originating from the end portion when a light signal propagates through the waveguide, and the metal vias and the end portion provide that an effective index of an optical mode to be propagated through the waveguide progressively varies in the end portion. Additional metal vias may be present along the waveguide upstream of the end portion, with the additional metal vias bordering the waveguide upstream of the end portion providing that the effective index of an optical mode to be propagated through the waveguide varies progressively toward the end portion.

Abstract: An integrated circuit includes a semiconductor substrate with an electrically isolated semiconductor well. An upper trench isolation extends from a front face of the semiconductor well to a depth located a distance from the bottom of the well. Two additional isolating zones are electrically insulated from the semiconductor well and extending inside the semiconductor well in a first direction and vertically from the front face to the bottom of the semiconductor well. At least one hemmed resistive region is bounded by the two additional isolating zones, the upper trench isolation and the bottom of the semiconductor well. Electrical contacts are electrically coupled to the hemmed resistive region.