Abstract: A memory device includes first and second dummy word line portions. A dummy word line driver drives the first dummy word line portion. A voltage dropping circuit causes a voltage on the second dummy word line to be less than a voltage on the first dummy word line. At least one dummy memory cell is coupled to the second dummy word line portion, remains in standby until assertion of the second dummy word line, and performs a dummy cycle in response to assertion of the second dummy word line. A reset signal generation circuit generates a reset signal in response to completion of a dummy cycle by the at least one dummy memory cell. An internal clock signal is generated from an external clock signal and the reset signal and is used in performing a read and/or write cycle to a memory array.

Abstract: Encapsulating cover for an electronic package is formed by a cover body having a front wall and, positioned around a through-passage, a mounting face that includes a bearing surface. A mounting face of an optical element bears against the bearing surface. The mounting face includes at least one local void that is set back with respect to the bearing surface to provide a space between the mounting face of the optical element and the bottom of the local void. The local void extends beyond an edge of the optical element. A drop of fastening adhesive extends locally into said local void and has a portion that is covered by the optical element and an uncovered portion that is located beyond the edge of the optical element.

Abstract: An integrated image sensor with backside illumination includes a pixel. The pixel is formed by a photodiode within an active semiconductor region having a first face and a second face. A converging lens, lying in front of the first face of the active region, directs received light rays towards a central zone of the active region. At least one diffracting element, having a refractive index different from a refractive index of the active region, is provided at least partly aligned with the central zone at one of the first and second faces.

Abstract: A semiconductor body of a first conductivity type and doped with a first doping level includes, at a front side surface thereof, a well of a second conductivity type and a region doped with the first conductivity type at a second doping level greater than the first doping level. An insulated vertical gate structure separates the region from the well. Buried iInsulated electrodes extend from the front side surface completely through the well and into a portion of the semiconductor body underneath the well. A conductive material portion of each buried insulated electrode is configured to receive a bias voltage and a conductive material portion of insulated vertical gate structure is configured to receive a gate voltage. The semiconductor body is delimited by a capacitive deep trench isolation that is biased at the same voltage as the buried insulated electrode.

Abstract: An integrated circuit includes a first domain supplied with power at a first supply voltage. A first transistor comprising in the first domain includes a first gate region and a first gate dielectric region. A second domain is supply with power at a second supply voltage and includes a second transistor having a second gate region and a second gate dielectric region, the second gate region being biased at a voltage that is higher than the first supply voltage. The first and second gate dielectric regions have the same composition, wherein that composition configures the first transistor in a permanently turned off condition in response to a gate bias voltage lower than or equal to the first supply voltage. The second transistor is a floating gate memory cell transistor, with the second gate dielectric region located between the floating and control gates.

Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

Abstract: A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.

Abstract: An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.1×0.1 ?m2.

Abstract: In an HEMT device, a gate region is formed in a wafer having a channel layer, a barrier layer, and a passivation layer, overlying each other. Drain and source electrodes are formed in the wafer, on different sides of the gate region. A dielectric layer is formed over the gate region and over the passivation layer. Selective portions of the dielectric layer are removed by a plurality of etches so as to form one or more cavities between the gate region and the drain electrode. The one or more cavities have a plurality of steps at an increasing distance from the wafer moving from the gate region to the drain electrode. The cavity is then filled with conductive material to form a field plate coupled to the source electrode, extending over the gate region, and having a surface facing the wafer and having a plurality of steps.

Abstract: A radiation scintillator detector comprising a substrate on which are arranged a scintillator module and a silicon photomultiplier optically coupled one to the other. The detector includes a package comprising an outer casing enclosing said scintillator module and said photomultiplier, said package comprising inside said outer casing an inner casing comprising resin reflecting photons, in particular infrared and/or visible photons, emitted by said scintillator module upon receiving a ionizing radiation, enclosing said scintillator module and said photomultiplier.

Abstract: MEMS device, in which a body made of semiconductor material contains a chamber, and a first column inside the chamber. A cap of semiconductor material is attached to the body and forms a first membrane, a first cavity and a first channel. The chamber is closed on the side of the cap. The first membrane, the first cavity, the first channel and the first column form a capacitive pressure sensor structure. The first membrane is arranged between the first cavity and the second face, the first channel extends between the first cavity and the first face or between the first cavity and the second face and the first column extends towards the first membrane and forms, along with the first membrane, plates of a first capacitor element.

Abstract: A non-volatile memory device includes a matrix memory plane with columns of memory words respectively formed on each row of the memory plane by groups of memory cells and control elements respectively associated with the memory words of each row. At least some of the control elements associated with the memory words of the corresponding row form at least one control block of B control elements disposed next to one another, adjacent to a memory block containing the B memory words disposed next to one another and associated with these B control elements, a first electrically-conducting link connecting one of the B control elements to all the control electrodes of the state transistors of the corresponding group of memory cells and B-1 second electrically-conducting link(s) respectively connecting the B-1 control element(s) to all the control electrodes of the state transistors of the B-1 corresponding group(s) of memory cells.

Abstract: The disclosure relates to an optical splitter including two waveguides on either side of an axis. Each waveguide includes a first segment and a second segment that are closer to the axis than the rest of the waveguide. The first segments are optically coupled and the second segments are optically coupled. Each guide includes between the first and second segment, starting from the first segment, a first curved section including in succession a curvature the concavity of which is turned the side opposite the axis then a curvature the concavity of which is turned towards the axis, and starting from the second segment a second curved section including in succession a curvature the concavity of which is turned the side opposite the axis then a curvature the concavity of which is turned towards the axis. The first curved sections of the two waveguides are curved differently.

Abstract: A phase-change memory includes a strip of phase-change material that is coated with a conductive strip and surrounded by an insulator. The strip of phase-change material has a lower face in contact with tips of a resistive element. A connection network composed of several levels of metallization coupled with one another by conducting vias is provided above the conductive strip. At least one element of a lower level of the metallization is in direct contact with the upper surface of the conductive strip.

Abstract: CRC generation circuitry includes a lookup-table storing N-bit CRC values for M one-hot data frames. N AND gates for each bit of a M-bit data frame receive that bit of the M-bit data frame and a different bit of a N-bit CRC value from the lookup-table corresponding to a position of the bit in the M-bit data frame. N exclusive-OR gates each receive output from one of the N AND gates for each bit of the M-bit data frame. The N exclusive-OR gates generate a final N-bit CRC value for the M-bit data frame. The CRC value is therefore generated with a purely combinational circuit, without clock cycle latency. Area consumption is small due to the small lookup-table, which itself permits use of any generator polynomial, and is independent of the width of the received data frame. This device can also generate a combined CRC for multiple frames.

Abstract: Provided is an acoustic transducer including: a semiconductor substrate; a vibrating membrane provided above the semiconductor substrate, including a vibrating electrode; and a fixed membrane provided above the semiconductor substrate, including a fixed electrode, the acoustic transducer detecting a sound wave according to changes in capacitances between the vibrating electrode and the fixed electrode, converting the sound wave into electrical signals, and outputting the electrical signals. At least one of the vibrating electrode and the fixed electrode is divided into a plurality of divided electrodes, and the plurality of divided electrodes outputting the electrical signals.

Abstract: An embodiment system includes a first processor configured to process a suite of instructions and a second processor configured to process a subset of the suite of instructions. The system further includes a power management circuit configured to select the first processor or the second processor as a selected processor, the power management circuit being further configured to activate the selected processor or place the selected processor on standby. The system also includes a first peripheral device configured to generate a first interrupt signal, a switch configured to direct the first interrupt signal to the selected processor, and a first memory configured to store a first interrupt routine associated with the first interrupt signal, the selected processor being configured to execute the first interrupt routine in response to the first interrupt signal.

Abstract: The invention relates to an antenna comprising: an elongate conducting band; an antenna socket; a connection to earth; at least one first capacitive element of adjustable capacitance; and at least one first inductive element in series with the first capacitive element.

Abstract: A comparison circuit includes an input interface configured to receive input signals and an output interface configured to deliver an output signal. A comparator is coupled between the input interface and the output interface. An amplifier is coupled between the input interface and the comparator. A neutralization circuit is configured to neutralize any change of state of the output signal starting from each moment in time at which the change of state of the output signal occurs and lasting for a second duration of propagation that compensates for a duration of propagation of signals within the amplifier.

Abstract: Disclosed herein is a control circuit for a movable mirror. The control circuit includes driving circuitry configured to drive the movable mirror with a drive signal to effectuate oscillating of the movable mirror, opening angle determination circuitry configured to determine an opening angle of the movable mirror, and amplitude control circuitry. The amplitude control circuitry is configured to a) first cause the driving circuitry to generate the drive signal as having an upper threshold drive amplitude, and b) then later cause the driving circuitry to generate the drive signal as having a nominal drive amplitude, as a function of the opening angle of the movable mirror being equal to a desired opening angle.