Abstract: A semiconductor material is patterned to define elongated fins insulated from an underlying substrate. A polysilicon semiconductor material is deposited over and in between the elongated fins, and is patterned to define elongated gates extending to perpendicularly cross over the elongated fins at a transistor channel. Sidewall spacers are formed on side walls of the elongated gates. Portions of the elongated fins located between the elongated gates are removed, along with the underlying insulation, to expose the underlying substrate. One or more semiconductor material layers are then epitaxially grown from the underlying substrate at locations between the elongated gates. The one or more semiconductor material layers may include an undoped epi-layer and an overlying doped epi-layer. The epitaxial material defines a source or drain of the transistor.

Abstract: Fault detection circuitry and a corresponding method are disclosed. A count value that is indicative of the switching period of a PWM signal is determined and it is determined whether this count value is between a first threshold and a second threshold. An error signal is generated when the switching period is not between the first and the second threshold. A count value that is indicative of the switch-on duration of the PWM signal is determined and compared with a switch-on threshold in order to determine whether the switch-on duration is greater than a maximum switch-on duration. A count value that is indicative of the switch-off duration of the PWM signal is determined and compared with a switch-off threshold in order to determine whether the switch-off duration is greater than a maximum switch-off duration. Error signals can be generated when the durations are greater than the maximum durations.

Abstract: Embodiments of the present disclosure include an apparatus and a method for connecting a first device and second device. An apparatus includes an angled connector configured to connect to a first device to a second device, the first device and the second device configured to communicate through signal paths in the connector, the signal paths configured to pass digital data signals, a fastening device configured to secure the angled connector to the first device.

Abstract: A semiconductor device includes a first semiconductor substrate with a first transistor therein. The first transistor includes a first source-drain formed by a doped region in the first semiconductor substrate. An intermediary insulating layer is formed on and above the first semiconductor substrate. A second semiconductor substrate is formed on and above the intermediary insulating layer. A second transistor is formed in the second semiconductor substrate, and includes a second source-drain formed by a doped region in the second semiconductor substrate. A trench is formed in the second semiconductor substrate and in contact with the doped region for the second semiconductor substrate. The trench has a thickness equal to that of the second semiconductor substrate. Metal wiring extends from a contact with the doped region for the first source-drain, through the intermediary insulating layer and the trench, to make electrical contact with the doped region for the second source-drain.

Abstract: An integrated circuit includes at least one input-output pad and a terminal intended to be connected to a source of a reference potential and further including a protection structure including a thyristor forward-connected between the pad and the terminal. The thyristor includes a first resistor between its cathode gate and the terminal. At least one Zener diode is disposed between the thyristor and the pad. The anode of the Zener diode is connected to the cathode gate of the thyristor and the cathode of the Zener diode is connected to the pad via at least one second resistor. The junction of the Zener diode is different from the junctions of the PNPN structure of the thyristor.

Abstract: A low dropout regulator produces output at an intermediate node. A resistive divider is coupled between the intermediate node and ground and provides a feedback signal to the low dropout regulator. A transistor has a first conduction terminal coupled to the intermediate node and a second conduction terminal coupled to an output node. A first impedance is coupled to the output node, a first switch selectively couples the first impedance to a supply node, a second impedance coupled to the output node, and a second switch selectively couples the second impedance to a ground node. Control circuitry is coupled to the control terminal of the transistor and to control terminals of the first and second switches. The control circuitry switches the electronic device to a power down mode by turning off transistor, closing the first and second switches, and turning off the low dropout regulator.

Abstract: A circuit includes an antenna circuit including a number of capacitors and an inductor. The antenna circuit is configured to transmit an output signal upon receiving an input transmit signal. A first control block is configured to transmit an enabling signal upon detecting a presence of a supply voltage at a feeding terminal of the actively transmitting tag in response to the actively transmitting tag being inserted into a host device. A VCO is configured to generate the input transmit signal with the frequency of the interrogator carrier signal upon receiving the enabling signal from the first control block and upon receiving the control voltage from the memory. A second control block is configured to enable a subset of the plurality of capacitors of the antenna circuit upon receiving the enabling signal from the first control block.

Abstract: A near field communications (NFC) transponder includes a transmit circuit coupled to a transmit antenna and a receive circuit coupled to a receive antenna. The transmit/receive antennae are configured such that no signal is induced on the receive antenna by operation of the transmit antenna. Advantageously, this permits continued reception by the receive antenna while the transmit antenna is used for transmission using active load modulation.

Abstract: A first transistor has a first conduction terminal coupled to a second bit line, a second conduction terminal coupled to a bit line node, and a control terminal biased by a second control signal. A second transistor has a first conduction terminal coupled to a second complementary bit line, a second conduction terminal coupled to a complementary bit line node, and a control terminal biased by the second control signal. A first replica transistor has a first conduction terminal coupled to the second bit line, a second conduction terminal coupled to the complementary bit line node, and a control terminal biased such that the first replica transistor is off. A second replica transistor has a first conduction terminal coupled to the second complementary bit line, a second conduction terminal coupled to the bit line node, and a control terminal biased such that the second replica transistor is off.

Abstract: A comparator circuit is implemented using a simple comparator core having two gain stages integrated in a single circuit block. The circuit operates with improved speed and resolution in comparison to a conventional continuous-time comparator. Offset trimming allows for the crossing time of the comparator to be adjusted close to an ideal crossing time.

Abstract: When communicating using active load modulation in a Radio Frequency Identification (RFID) system, a carrier signal having a carrier frequency is received from a reader device. In response, a modulated signal is generated and a burst of a sending signal is transmitted. The sending signal is decayed at the end of the burst.

Abstract: A transducer module, comprising: a supporting substrate, having a first side and a second side; a cap, which extends over the first side of the supporting substrate and defines therewith a first chamber and a second chamber internally isolated from one another; a first transducer in the first chamber; a second transducer in the second chamber; and a control chip, which extends at least partially in the first chamber and/or in the second chamber and is functionally coupled to the first and second transducers for receiving, in use, the signals transduced by the first and second transducers.

Abstract: A galvanic isolation circuit is formed by a differential transformer having primary and secondary windings for transmission of signals over a carrier between the primary and the secondary windings of the transformer. A galvanic isolation oxide layer is provide between the primary and secondary windings. Each winding includes include a center tap providing a low-impedance paths for dc and low frequency components of common-mode currents through the differential transformer. A pass-band stage is coupled to the secondary winding of the transformer and configured to permit propagation of signals over said carrier through the pass-band amplifier stage while providing for a rejection of common-mode noise.

Abstract: A semiconductor substrate doped with a first doping type is positioned adjacent an insulated gate electrode that is biased by a gate voltage. A first region within the semiconductor substrate is doped with the first doping type and biased with a bias voltage. A second region within the semiconductor substrate is doped with a second doping type that is opposite the first doping type. Voltage application produces an electrostatic field within the semiconductor substrate causing the formation of a fully depleted region within the semiconductor substrate. The fully depleted region responds to absorption of a photon with an avalanche multiplication that produces charges that are collected at the first and second regions.

Abstract: A circuit described herein includes a charge to voltage converter circuit having an input coupled to receive a sense signal from a sense node associated with a mutual capacitance to be sensed, and an output. A reset switch is coupled between the output of the charge to voltage converter circuit and the input of the charge to voltage converter. An accumulator circuit is configured to accumulate voltages at the output of the charge to voltage converter circuit and to generate an accumulator output signal. Control circuitry is configured to generate control signals for the reset switch and accumulator circuit so as to reduce noise in the accumulator output signal.

Abstract: An apparatus for nucleic acid sequencing includes: a base-detection device in a detection site, the base-detection device being configured to detect bases of a portion of a nucleic acid strand at the detection site; and a conveying device, configured to extend the nucleic acid strand and to cause the extended nucleic acid strand to slide through the detection site along a path. The base-detection device includes a plurality of field-effect nanowire detectors, arranged along the path and each including a respective nanowire and nucleic acid probes, which are defined by respective base sequences and are fixed to the respective nanowire.

Abstract: Various embodiments provide a memory cell that includes a vertical selection gate, a floating gate extending above the substrate, wherein the floating gate also extends above a portion of the vertical selection gate, over a non-zero overlap distance, the memory cell comprising a doped region implanted at the intersection of a vertical channel region extending opposite the selection gate and a horizontal channel region extending opposite the floating gate.

Abstract: A photosensor is formed within a semiconductor substrate layer having a front side and a back side. An isolation structure delimits an active region of the semiconductor substrate layer which includes a charge collecting region. The front side of semiconductor substrate layer includes a charge transfer circuit. A reflecting mirror is mounted at the back side of the semiconductor substrate layer. The reflecting mirror includes a pupil opening configured to admit light into the active region at the back side. An underside reflective surface of the reflecting mirror is configured to reflect light received from the active region back into the active region.

Abstract: A PWM controlled multi-phase resonant voltage converter may include a plurality of primary windings powered through respective half-bridges, and as many secondary windings connected to an output terminal of the converter and magnetically coupled to the respective primary windings. The primary or secondary windings may be connected such that a real or virtual neutral point is floating.

Abstract: The state of charge of a rechargeable battery is determined by calculating the DC impedance of the battery. The impedance is calculated by: performing a two different constant current discharges of the battery at a first and second C-rates, respectively; measuring the voltage and current during the interval of each constant current discharge and calculating the amount of charge extracted from the battery up to a point where the battery voltage drops to a threshold value; calculating the state of charge of the battery; and calculating the DC impedance of the battery as a function of the difference between the battery voltages and discharge currents for the two different discharges.