Abstract: At least one image of a moving object is acquired using an image acquisition device equipped with an automatic focussing system. A distance between the object and the device when the effective acquisition of the image occurs is estimated based on the estimated speed and on the period of time separating a time of actuation triggering the process for acquiring the at least one image from the time of acquisition of the said effective acquisition, and the taking into account of the said distance by the automatic focussing system.

Abstract: An integrated electronic circuit has probe indentations filled by a hard covering substance. The integrated circuit device results from a process of manufacturing including forming a substrate comprising a plurality of functional components of the electronic circuit, creating a plurality of conductive layers on such substrate to form an electric contact region with high hardness equal to or greater than a first hardness value of about 300 HV, contacting the electric contact region with a probe thereby causing an indentation. The process further comprises, after the test run, creating a covering conductive layer on at least one part of the electric contact region contacted by the probe to fill the indentation.

Abstract: Various embodiments provide an optimized image filter. The optimized image and video obtains an input image and selects a target pixel for modification. Difference values are then determined between the selected target pixel and each reference pixel of a search area. Subsequently, a weighting function is used to determine weight values for each of the reference pixels of the search area based on their respective difference value. The selected target pixel is then modified by the optimized image filter using the determined weight values. A new target pixel in an apply patch is then selected for modification. The new target pixel is modified using the previously determined weight values reassigned to a new set of reference pixels. The previously determined weight values are reassigned to the new set of reference pixels based on each of the new set of reference pixels' position relative to the new target pixel.

Abstract: A wireless power transmitting/receiving device includes a power transmitting/receiving element, a plurality of switches, a current sensor and a controller. Each of the plurality of switches has a control terminal and a conduction terminal, with the conduction terminal being coupled to the power transmitting/receiving element. The current sensor senses a current through the power transmitting/receiving element, and the controller is configured to control the plurality of switches based on the sensed current.

Abstract: A method of manufacturing a heat pipe, including the steps of: forming in a substrate a cylindrical opening provided with a plurality of ring-shaped recessed radially extending around a central axis of the opening; arranging in the recesses separate ring-shaped strips made of a material catalyzing the growth of carbon nanotubes; and growing carbon nanotubes in the opening from said ring-shaped strips.

Abstract: A transimpedance amplifier circuit includes a feedback control loop that generates a compensation current at an input of a transimpedance amplifier. The feedback control loop includes a differential integrator with an integration capacitor. A time constant associated with charging the integration capacitor is variable as a function of a pre-charge control signal. During a pre-charge phase, the pre-charge control signal is set to a first value so as to set the time constant associated with charging the integration capacitor to a first time constant value. During an operation phase, the pre-charge control signal is set to a second value so as to increase the time constant associated with charging the integration capacitor to a second time constant value greater than the first time constant value for the pre-charge phase.

Abstract: An electronic device includes a carrier substrate with at least one integrated-circuit chip mounted on a front face of the carrier substrate. An encapsulation block on the front face and embedding the integrated-circuit chip has a periphery with corners. The encapsulating block further has, in at least one local zone located in at least one corner and from the front face of the carrier substrate, a smaller thickness than a thickness of the encapsulation block at least in a surrounding zone. The electronic device is manufactured by a process in which the zone of smaller thickness is obtained by molding or by machining.

Abstract: Dual gate FD-SOI transistors are used as MOSFET capacitors to replace passive well capacitors in analog microcircuits. Use of the dual gate FD-SOI devices helps to reduce unstable oscillations and improve circuit performance. A thick buried oxide layer within the substrate of an FD-SOI transistor forms a capacitive dielectric that can sustain high operating voltages in the range of 1.2 V-3.3 V, above the transistor threshold voltage. A secondary gate in the FD-SOI transistor is used to create a channel from the back side so that even when the bias voltage on the first gate is small, the effective capacitance remains higher. The capacitance of the buried oxide layer is further utilized as a decoupling capacitor between supply and ground. In one example, a dual gate PMOS FD-SOI transistor is coupled to an operational amplifier and a high voltage output driver to produce a precision-controlled voltage reference generator.

Abstract: An integrated circuit chip includes an interconnection stack with a cavity formed therein. The cavity extends through one or more interconnection levels of the stack. A material at least partially fills the cavity. The fill material has a selectivity to polishing and/or to etching different by more than 10% from a selectivity to polishing and/or to etching of a material forming an insulator of the interconnection stack.

Abstract: An active stylus is capacitively coupled to a capacitive touch panel for communication. The active stylus operates in a wait mode to receive initial communications from the panel. In response to such receipt, the active stylus synchronizes to a repeating communications frame implementing time division multiplexing. Communications from the active stylus to the panel include: information communications; synchronization communications and communications specific for columns and/or rows of the panel. Communications from the panel to the active stylus may be addressed uniquely to the stylus or commonly to a group of styluses.

Abstract: An embodiment near-field communication (NFC) router, includes a first switch coupled between a first terminal of the NFC router and a second terminal of the NFC router; and a rectifier bridge having an output terminal coupled to a control terminal of the first switch, the rectifier bridge being configured to rectify a signal detected by an antenna external to the NFC router.

Abstract: A low side driver includes a first transistor coupled in series with a second transistor at a low side voltage node for a load. A capacitance is configured to store a voltage and a voltage buffer circuit has an input coupled to receive the voltage stored by the capacitance and an output coupled to drive a control node of the second transistor with the stored voltage. A current source supplies current through a switch to the capacitance and the input of the voltage buffer circuit. The switch is configured to be actuated by an oscillating enable signal so as to cyclically source current from the current source to the capacitance and cause a stepped increase in the stored voltage which is applied by the buffer circuit to the control node of the second transistor.

Abstract: A digital low drop-out regulator circuit includes transistor switches that are selectively actuated in response to a comparison of an output voltage at an output node to corresponding tap reference voltages. A dynamic reference voltage correction circuit operates to shift voltage levels of the tap reference voltages in response to a difference between the output voltage at the output node and an input reference voltage.

Abstract: A method of protecting a Rijndael-type algorithm executed by an electronic circuit against side channel attacks, wherein: each block of data to be encrypted or decrypted is masked with a first mask before applying a non-linear block substitution operation from a first substitution box, and is then unmasked by a second mask after the substitution; the substitution box is recalculated, block by block, before applying the non-linear operation, the processing order of the blocks of the substitution box being submitted to a random permutation; and the recalculation of the substitution box uses the second mask as well as third and fourth masks, the sum of the third and fourth masks being equal to the first mask.

Abstract: A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A cyclical epitaxy process is performed to provide a collector region of a first conductivity type on the collector contact region that is laterally separated from a silicon layer by an air gap. A second epitaxial region forms a base region of a second conductivity type. Deposited semiconductor material forms an emitter region of the first conductivity type. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.

Abstract: A delaying element includes a first XOR logic gate and a second XOR logic gate. A first input of the first XOR logic gate defines an input terminal. A first input of the second XOR logic gate is connected to an output of the first XOR logic gate. An output of the second XOR logic gate defines an output terminal. The second inputs of the first and second XOR logic gates are connected to a second input terminal.

Abstract: Laterally insulated integrated circuit chips are fabricated from a semiconductor wafer. Peripheral trenches are formed in the wafer which laterally delimit integrated circuit chips to be formed. A depth of the peripheral trenches is greater than or equal to a desired final thickness of the integrated circuit chips. The peripheral trenches are formed by a process which repeats successive steps of a) ion etching using a sulfur hexafluoride plasma, and b) passivating using an octafluorocyclobutane plasma. Upon completion of the step of forming the peripheral trenches, lateral walls of the peripheral trenches are covered by an insulating layer of a polyfluoroethene. A thinning step is performed on the lower surface of the wafer until a bottom of the peripheral trenches is reached. The insulating layer is not removed.

Abstract: A photonic integrated circuit includes an optical coupling device situated between two successive interconnection metal levels. The optical coupling device includes a first optical portion that receives an optical signal having a transverse electric component in a fundamental mode and a transverse magnetic component. A second optical portion converts the transverse magnetic component of the optical signal into a converted transverse electric component in a higher order mode. A third optical portion separates the transverse electric component from the converted transverse electric component and switches the higher order mode to the fundamental mode. A fourth optical portion transmits the transverse electric component to one waveguide and transmits the converted transverse electric component to another waveguide.

Abstract: An optical testing circuit on a wafer includes an optical input configured to receive an optical test signal and photodetectors configured to generate corresponding electrical signals in response to optical processing of the optical test signal through the optical testing circuit. The electrical signals are simultaneously sensed by a probe circuit and then processed. In one process, test data from the electrical signals is simultaneously generated at each step of a sweep in wavelength of the optical test signal and output in response to a step change. In another process, the electrical signals are sequentially selected and the sweep in wavelength of the optical test signal is performed for each selected electrical signal to generate the test data.

Abstract: A semiconductor gas sensor device includes a first cavity that is enclosed by opposing first and second semiconductor substrate slices. At least one conducting filament is provided to extend over the first cavity, and a passageway is provided to permit gas to enter the first cavity. The sensor device may further including a second cavity that is hermetically enclosed by the opposing first and second semiconductor substrate slices. At least one another conducting filament is provided to extend over the second cavity.