Abstract: A device and method can be used to manage the operation of a ring oscillator circuit. A master oscillator circuit generates a master supply voltage. The master supply voltage associated with a stable oscillation rate of the master oscillator circuit. The master oscillator circuit is supplied with current and is structurally identical to the ring oscillator circuit. A capacitive circuit is loaded with a load voltage originating from the master supply voltage. In response to a control signal, the ring oscillator circuit is supplied with a current controlled by a voltage delivered by the capacitive circuit, in such a way as to provide a stable oscillation rate for the ring oscillator circuit.

Abstract: Data weighted averaging of a thermometric coded input signal is accomplished by controlling the operation of a crossbar switch matrix to generate a current cycle of a data weighted averaging output signal using a control signal generated in response to feedback of a previous cycle of the data weighted averaging output signal. The control signal specifies a bit location for a beginning logic transition of the data weighted averaging output signal in the current cycle based on detection of an ending logic transition of the data weighted averaging output signal in the previous cycle.

Abstract: A device measures the current in an inductive load using two separate current-measuring paths to detect the current in the inductive load. The inductive load is connected between first and second nodes, and the first node connected to a first voltage. The device includes first and second transistors cascaded together between the first node and a third node that is connected to a second voltage. First and second sense amplifiers measure the current in the inductive load. The first and second sense amplifiers are connected to at least one terminal of the first and second transistors. Two blocks sample and hold signals from the first and second sense amplifiers, which represent, respectively, the currents in the two separate current-measuring paths. The two currents are subtracted in a comparison node for generating an error signal that is compared with a predefined window and if outside the window a failure signal is generated.

Abstract: An integrated circuit includes peripheral conductive pads interconnected by a peripheral conductive track within an integrated circuit chip. The integrated circuit chip further includes internal conductive pads interconnected by an internal conductive track within the integrated circuit chip. A conductive bonding wire external to the integrated circuit chip connects the one peripheral conductive pad to one internal conductive pad. A package encapsulates the integrated circuit chip and the conductive bonding wire.

Abstract: The invention relates to a system comprising a plurality of boards, each of which comprises a sensor and a control processor. The boards are connected together by a serial bus. One of the boards acts as master and the others as slaves. The master board is suitable for accessing the measurements of the plurality of boards and for sending these measurements, via a UART connection, to a host processor. The acquisition of the measurements takes place according to a specific synchronization method.

Abstract: A rotary element is equipped with a pattern representing a reflected binary code on at least three bits. A detection circuit is configured to sense the pattern and deliver an incident signal encoded in reflected binary code on at least three bits. The incident signal is converted by a transcoding circuit into an intermediate signal encoded in reflected binary code on two bits. A decoding stage decodes the intermediate signal and outputs at least one clock signal representing the amount of rotation of the rotary element and a direction signal representing the direction of rotation. A processing circuit determines the movement of the rotary element, and has at least one general purpose timer designed to receive the at least one clock signal and direction signal.

Abstract: A reading circuit for a charge-retention circuit stage is provided with a storage capacitor coupled between a first biasing terminal and a floating node, and a discharge element coupled between the floating node and a reference terminal. The reading circuit further has an operational amplifier having a first input terminal that is coupled to the floating node and receives a reading voltage, a second input terminal receives a reference voltage, and an output terminal on which it supplies an output voltage, the value of which is a function of the comparison between the reading voltage and the reference voltage and indicative of a residual charge in the storage capacitor. A shifting stage shifts the value of the reading voltage of the floating node, before the comparison is made between the reading voltage and the reference voltage for supplying the output voltage.

Abstract: A microelectromechanical sensing structure having a membrane region including a membrane that undergoes deformation as a function of a pressure and a first actuator that is controlled in a first operating mode and a second operating mode, the first actuator being such that, when it operates in the second operating mode, it contacts the membrane region and deforms the membrane in a way different from when it operates in the first operating mode.

Abstract: A circuit includes a voltage converter converting source voltage to supply voltage at a first node as a function of a feedback voltage at a feedback node. A first output path is coupled between first and second node nodes. Feedback circuitry couples the second node to the feedback node when a voltage at the second node exceeds a first overvoltage, in a first mode of operation. The feedback circuitry couples the second node to the feedback node when the voltage at the second node exceeds a second overvoltage less than the first overvoltage, in a second mode of operation. Impedance circuitry is coupled between the first node and a third node and generates an auxiliary supply voltage and an auxiliary ground voltage when the circuit is in both the first and second modes, the auxiliary supply voltage being less than the supply voltage in both the first and second modes.

Abstract: An electronic integrated circuit chip includes a first transistor arranged inside and on top of a solid substrate, a second transistor arranged inside and on top of a layer of semiconductor material on insulator having a first thickness, and a third transistor arranged inside and on top of a layer of semiconductor material on insulator having a second thickness. The second thickness is greater than the first thickness. The solid substrate extends underneath the layers of semiconductor material and is insulated from those layers by the insulator.

Abstract: A vertical power component includes a doped silicon substrate of a first conductivity type. A local well of a second conductivity type extends from an upper surface of the substrate. A passivation structure coats a peripheral region of the upper surface side of the substrate surrounding the well. This passivation structure includes, on top of and in contact with the peripheral substrate region, a first region made of a first passivation material and a second region made of a second passivation material. The second region generates, in a surface region of the substrate in contact with said second region, a local increase of the concentration of majority carriers in the substrate.

Abstract: A method is for processing a channel analog signal coming from a transmission channel. The method may include converting the channel analog signal into a channel digital signal, and detecting a state of the transmission channel based on the channel digital signal to detect whether the transmission channel is, over an interval of time, one or more of linear and time invariant and linear and cyclostationary.

Abstract: An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the substrate limited by an insulating region. To address compressive stress in the active region, the circuit further includes at least one electrically inactive trench located at least in the insulating region and containing an internal area configured to reduce compressive stress in the active region. The internal area is filled with polysilicon. The polysilicon filled trench may further extend through the insulating region and into the substrate.

Abstract: A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.

Abstract: Data weighted averaging of a thermometric coded input signal is accomplished by controlling the operation of a crossbar switch matrix to generate a current cycle of a data weighted averaging output signal using a control signal generated in response to feedback of a previous cycle of the data weighted averaging output signal. The control signal specifies a bit location for a beginning logic transition of the data weighted averaging output signal in the current cycle based on detection of an ending logic transition of the data weighted averaging output signal in the previous cycle.

Abstract: A method of controlling a cycle for writing at least one data item to at least one memory slot of the electrically programmable and erasable read-only memory type disposed in an electronic circuit supplied by a supply voltage includes a controlled increase of the duration of the write cycle in the presence of a decrease in the supply voltage.

Abstract: Described herein is a microelectromechanical detection structure, provided with: a substrate having a top surface extending in a plane; a detection-electrode arrangement; an inertial mass, suspended above the substrate and the detection-electrode arrangement; and elastic elements, coupling the inertial mass to a central anchorage element fixed with respect to the substrate, in such a way that it is free to rotate about an axis of rotation as a function of a quantity to be detected along a vertical axis, the central anchorage element being arranged at the axis of rotation. A suspension structure is coupled to the detection-electrode arrangement for supporting it, suspended above the substrate and underneath the inertial mass, and is anchored to the substrate via at least one first anchorage region; the fixed-electrode arrangement is anchored to the suspension structure via at least one second anchorage region.

Abstract: An integrated MEMS structure includes a driving assembly anchored to a substrate and actuated with a driving movement. A pair of sensing masses suspended above the substrate and coupled to the driving assembly via elastic elements is fixed in the driving movement and performs a movement along a first direction of detection, in response to an external stress. A coupling assembly couples the pair of sensing masses mechanically to couple the vibration modes. The coupling assembly is formed by a rigid element, which connects the sensing masses and has a point of constraint in an intermediate position between the sensing masses, and elastic coupling elements for coupling the rigid element to the sensing masses to present a first stiffness to a movement in phase-opposition and a second stiffness, greater than the first, to a movement in phase, of the sensing masses along the direction of detection.

Abstract: A method for forming an electronic device includes embedding an integrated circuit die in a package including substrate of thermally conductive material with front and back surfaces and a through-hole. The die is sunk in the through-hole. A first insulating material layer covers the die front surface and the package front surface with first windows for accessing die terminals. Package terminals and package track are arranged on the first insulating layer. A second insulating material layer covers the first insulating layer and the package tracks with second windows for accessing the package terminals.

Abstract: A current limiting circuit includes a current sensing module that is configured to sense an output current of a power transistor and to generate a corresponding sensing current which is proportional to the output current. A first current limiting module coupled to the current sensing module is configured to generate a first limiting current based on the sensing current when a variation of the output current of the power transistor exceeds a first current level. A second current limiting module coupled to the current sensing module is configured to generate a second limiting current based on the sensing current when a variation of the output current of the power transistor exceeds a second current level. A converting module coupled to the first and second current limiting modules and the power transistor controls a gate voltage of the power transistor based at least on the first and second limiting currents.