Abstract: A readout device for a capacitive sense matrix includes a computer readable storage medium configured to store capacitance data. The capacitance data represents capacitance values of the capacitive sense matrix. The readout device also includes a readout circuit configured to receive a signal from the capacitive sense matrix, the readout circuit being configured based upon the capacitance data. Also described are a readout method and a method of compensating for variations in capacitance.

Abstract: A system and method for multi-touch integrity sensing for a multi-touch capacitive touch screen determines a distinction between wanted touches, such as via a finger or stylus, and unwanted touches such as via foreign matter, errors, and the like. Mutual capacitance and self-capacitance sensing data is collected and processed to identify reference strengths and detection thresholds. If differences between mutual/self-capacitance strength and the corresponding reference strengths exceed the corresponding detection thresholds, then the touch is classified as an unwanted (for example, water) touch.

Abstract: A method and apparatus for secondary side current mode control of a converter are provided. In the method and apparatus, an output voltage of the converter is detected, where the converter has primary and secondary windings that are galvanically isolated in respective primary and secondary sides. A secondary control signal is generated in the secondary side based at least in part on the output voltage and a reference voltage. The secondary control signal is converted to a primary control signal provided in the primary side. The converter is driven in the primary side based at least in part on the primary control signal and a current sense signal indicative of a current flowing through the primary winding.

Abstract: A high-voltage electronic switch includes first and second transistors defining a current flow path between an input and output of the switch. The transistors have a common point of the current flow path and a common control terminal. A control circuit includes a voltage line receiving a limit operating voltage and first and second branches coupled between the voltage line and the common point and common control terminal, respectively. Further transistors are activated, upon turning-off of the first and second transistors, for coupling the branches to the voltage line. The branches include a parallel connected resistor, diode, and string of diodes with opposite polarities. The diode of the first branch plus string of diodes of the second branch and diode of the second branch plus string of diodes of the first branch provide coupling paths between the voltage line and, respectively, the common point and common control terminal.

Abstract: An ESD protection device includes a MOS transistor connected between a first terminal and a second terminal and having a gate region, source/drain region and a well region electrically coupled by a resistive-capacitive circuit configured to control turn on of the MOS transistor in response to an ESD event. The resistive-capacitive circuit has a common part with at least one of the source, gate or drain regions of the MOS transistor and includes a capacitive element and a resistive element. A first electrode of the capacitive element is formed by the resistive element and a second electrode of the capacitive element is formed by at least a portion of a semiconductor film within which the source/drain region is formed.

Abstract: A method of verifying the sensitivity of an electronic circuit executing a modular exponentiation calculation in a first register and a second register, successively including, for each bit of the exponent: a first step of multiplying the content of one of the registers, selected from among the first register and the second register according to the state of the bit of the exponent, by the content of the other one of the first and second registers, placing the result in said one of the registers; a second step of squaring the content of said other one of the registers by placing the result in this other register, wherein the content of that of the first and second registers which contains the multiplier of the operation of the first step is disturbed, for each bit of the exponent, during the execution of the first step.

Abstract: An energy harvesting interface receives an electrical signal from an inductive transducer and outputs a supply signal. An input branch includes a first switch and a second switch connected in series between a first input terminal and an output terminal, and further a third switch and a fourth switch connected in series between a second input terminal and the output terminal. A first electrical-signal-detecting device coupled across the second switch detects a first threshold value of an electric storage current in the inductor of the transducer. A second electrical-signal-detecting device coupled across the fourth switch detects whether the electric supply current that flows through the fourth switch reaches a second threshold value lower than the first threshold value.

Abstract: A voltage multiplier circuit operates in response to a received clock signal to perform a voltage multiplication operation on an input voltage to generate an output voltage. The voltage multiplier circuit includes a pair of intermediate nodes that are capacitively coupled to receive, respectively, opposite phases of a clock signal. A first CMOS driver circuit is coupled to one of the intermediate nodes and has an output configured to generate one phase of a level shifted output clock signal. A second CMOS driver circuit is coupled to another one of the intermediate nodes and has an output configured to generate another phase of the level shifted output clock signal.

Abstract: A method of protecting a Rijndael-type algorithm executed by an electronic circuit against side channel attacks, wherein: each block of data to be encrypted or to be decrypted is masked with a first mask before a non-linear block substitution operation is applied based on a substitution box, and is then unmasked with a second mask after the substitution; and the substitution box is recalculated, block by block, before the non-linear operation is applied, the processing order of the blocks of the substitution box being submitted to a random permutation, commutative with the non-linear substitution operation.

Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.

Abstract: A memory cell includes a substrate layer, with a plurality of silicided semiconductor fins stacked on the substrate layer and spaced apart from one another. A first metal liner layer is stacked on the plurality of silicided semiconductor fins and on the substrate layer. A plurality of first contact pillars are stacked on the first metal liner layer adjacent a different respective one of the plurality of silicided semiconductor fins. A configurable resistance structure covers portions of the first metal liner layer that are stacked on the substrate layer and portions of the first metal liner layer that are stacked on each of the plurality of silicided semiconductor fins. A metal fill layer is stacked on the configurable resistance structure. A plurality of second contact pillars is stacked on the metal fill layer adjacent a space between a different pair of adjacent silicided semiconductor fins of the plurality thereof.

Abstract: A driving apparatus configured to drive a light emitting device includes a driving current source module operable to supply current to the light emitting device via a node during operation. A protection module coupled to the node and the driving current source module selectively injects current to the node during operation. The driving current source module is controlled based on a detection result of a voltage on the node.

Abstract: A process for manufacturing surface-mount semiconductor devices, in particular of the Quad-Flat No-Leads Multi-Row type, comprising providing a metal leadframe, in particular a copper leadframe, which includes a plurality of pads, each of which is designed to receive the body of the device, the pads being separated from adjacent pads by one or more rows of wire-bonding contacting areas, outermost rows from among the one or more rows of wire-bonding contacting areas identifying, together with outermost rows corresponding to the adjacent pads, separation regions.

Abstract: A method of compensated touch data values disclosed herein includes acquiring touch data values about a dead sensing zone of a touch screen, and determining a peak value of those touch data values. Then, a new peak value is calculated as a function of an average of the peak value and another value of the touch data value, and a sharpness value for the dead sensing zone is generated if a second highest value of the touch data values is less than the new peak value. Thereafter, compensated touch data values are generated for the dead sensing zone if the second highest value is greater than the new peak value.

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

Abstract: A data frame in a touch capacitive sensing circuit includes both mutual capacitance data and self capacitance data. The mutual capacitance data and self capacitance data of the frame are filtered to define mutual capacitance and self capacitance islands. Centroids of the mutual capacitance and self capacitance islands are calculated and then processed in a weighted mixing operation to produce a hybrid centroid that more accurately locates the coordinates of a detected touch/hover.

Abstract: An integrated circuit is provided having an active circuit. A heating element is adjacent to the active circuit and configured to heat the active circuit. A temperature sensor is also adjacent to the active circuit and configured to measure a temperature of the active circuit. A temperature controller is coupled to the active circuit and configured to receive a temperature signal from the temperature sensor. The temperature controller operates the heating element to heat the active circuit to maintain the temperature of the active circuit in a selected temperature range.

Abstract: A method of making a semiconductor device includes forming a first spacer for at least one gate stack on a first semiconductor material layer, and forming a respective second spacer for each of source and drain regions adjacent the at least one gate. Each second spacer has a pair of opposing sidewalls and an end wall coupled thereto. The method includes filling the source and drain regions with a second semiconductor material while the first and second spacers provide confinement.

Abstract: A circuit includes: a plurality of memory locations configured to store pulse width modulation (PWM) signal generation data, the memory locations being arranged in N sets of memory locations, each including i channel memory locations, each channel memory location being configured to store a respective duty-cycle value for a respective one of N PWM modulation patterns; a selection circuit configured to selectively access a selected set of the sets of memory locations; a buffer circuit configured to store the PWM signal generation data from the channel memory locations of the selected set; and a finite state machine configured to receive PWM signal generation input data indicative of a plurality of PWM modulation patterns with a respective plurality of duty-cycle values, the finite state machine configured to activate the selection circuit to load the PWM signal generation data from the channel memory locations of the selected set to the buffer circuit.

Abstract: A method for forming a semiconductor device includes forming a mask layer on a stressed semiconductor layer of a stressed, semiconductor-on-insulator wafer. An isolation trench bounding the stressed semiconductor layer is formed. The isolation trench extends through the mask layer and into the SOI wafer past an oxide layer thereof. A dielectric body is formed in the isolation trench. A relaxation reduction liner is formed on the dielectric body and on an adjacent sidewall of the stressed semiconductor layer. The mask layer on the stressed semiconductor layer is removed.