Abstract: In accordance with an embodiment, a circuit includes a sense amplifier circuit configured to sense a difference between a first current based on a direct memory bit and a second current based on a complementary memory bit. The direct memory bit is coupled to a first input of the sense amplifier circuit, and the complementary memory bit is coupled to a second input of the sense amplifier circuit. A controller is configured to, during a sense operation, selectively add a first margin current to the first current, and during the sense operation, selectively add a second margin current to the second current.

Abstract: In an embodiment, focusing an image-capture device such as, e.g., a camera including an optical system displaceable in opposite directions (A, B) via a focusing actuator, is controlled by evaluating a scale factor for the images acquired by the device. An accumulated value of the variations of the scale factor over a time interval (e.g., over a number of frames) is produced and the absolute value thereof is compared against a threshold. If the threshold is reached, which may be indicative of a zoom movement resulting in image de-focusing, a refocusing action is activated by displacing the optical system via the focusing actuator in the one or the other of the opposite focusing directions (A or B) as a function of whether the accumulated value exhibits an increase or a decrease (i.e., whether the accumulated value is positive or negative).

Abstract: A phase-change memory cell, comprising: a substrate housing a transistor, for selection of the memory cell, that includes a first conduction electrode; a first electrical-insulation layer on the selection transistor; a first conductive through via through the electrical-insulation layer electrically coupled to the first conduction electrode; a heater element including a first portion in electrical contact with the first conductive through via and a second portion that extends in electrical continuity with, and orthogonal to, the first portion; a first protection element extending on the first and second portions of the heater element; a second protection element extending in direct lateral contact with the first portion of the heater element and with the first protection element; and a phase-change region extending over the heater element in electrical and thermal contact therewith.

Abstract: A MEMS device includes a fixed supporting body forming a cavity, a mobile element suspended over the cavity, and an elastic element arranged between the fixed supporting body and the mobile element. First, second, third, and fourth piezoelectric elements are mechanically coupled to the elastic element, which has a shape symmetrical with respect to a direction. The first and second piezoelectric elements are arranged symmetrically with respect to the third and fourth piezoelectric elements, respectively. The first and fourth piezoelectric elements are configured to receive a first control signal, whereas the second and third piezoelectric elements are configured to receive a second control signal, which is in phase opposition with respect to the first control signal so that the first, second, third, and fourth piezoelectric elements deform the elastic element, with consequent rotation of the mobile element about the direction.

Abstract: A method for touch screen self-capacitance foreign matter detection for a capacitive touch screen is disclosed. By iteratively performing methods of self-capacitance scanning and foreign matter scanning foreign matter may be detected.

Abstract: In an embodiment, digital video frames in a flow are subjected to a method of extraction of features including the operations of: extracting from the video frames respective sequences of pairs of keypoints/descriptors limiting to a threshold value the number of pairs extracted for each frame; sending the sequences extracted from an extractor module to a server for processing with a bitrate value variable in time; receiving the aforesaid bitrate value variable in time at the extractor as target bitrate for extraction; and limiting the number of pairs extracted by the extractor to a threshold value variable in time as a function of the target bitrate.

Abstract: A method for secure processing of encrypted data within a receiver includes receiving a packet of encrypted compressed data and allocating a region of memory for storing a decrypted version of the packet of encrypted compressed data. The allocation is in response to, and after, reception of the encrypted compressed data. A size of the region of the memory allocated is equal to a size of the packet of encrypted compressed data that is received. The method further includes modifying a configuration of an access authorization filter for defining access rights to the allocated region, decrypting the packet of encrypted compressed data, and storing, in the allocated region, the decrypted compressed data of the packet. The aforementioned allocation, modification, decryption, and storage steps are repeated in response to each new reception of a packet of encrypted compressed data so as to dynamically modify the configuration of the access authorization filter.

Abstract: An electronic power module comprising a case that houses a stack, which includes: a first substrate of a DBC type or the like; a die, integrating an electronic component having one or more electrical-conduction terminals, mechanically and thermally coupled to the first substrate; and a second substrate, of a DBC type or the like, which extends over the first substrate and over the die and presents a conductive path facing the die. The die is mechanically and thermally coupled to the first substrate by a first coupling region of a sintered thermoconductive paste, and the one or more conduction terminals of the electronic component are mechanically, electrically, and thermally coupled to the conductive path of the second substrate by a second coupling region of sintered thermoconductive paste.

Abstract: A method can be used for managing the operation of a non-volatile memory equipped with a system for correction of a single error and for detection of a double error. In the case of the detection of a defective bit line of the memory plane, a redundant bit line is assigned and the values of the bits of the memory cells of the defective line are copied into the memory cells of the redundant line and are inverted in the case of the detection of double errors by the system, or corrected by the system in the presence of single errors.

Abstract: An integrated fluidic circuit has a supporting surface that carries a first fluid to be moved at a first functional region; a dielectric structure, defining the supporting surface; and an electrode structure, coupled to the dielectric structure for generating an electric field at the first functional region, such as to modify electrowetting properties of the interface between the first fluid and the supporting surface. The dielectric structure has a first spatially variable dielectric profile at the first functional region, thus determining a corresponding spatially variable profile of the electric field, and, consequently, of the electrowetting properties of the interface between the first fluid and the supporting surface. The integrated fluidic circuit may achieve mixing between the first fluid and a second fluid.

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer disposed above the photodiode, a dielectric region disposed above the antireflection layer, an optical filter disposed above the dielectric region, and a diffraction grating disposed in the antireflection layer. The diffraction grating includes an array of pads.

Abstract: A method for a phase calibration in a frontend circuit of a near field communication (NFC) tag device is disclosed. An active load modulation signal is generated with a preconfigured value of a phase difference with respect to a reference signal of an NFC signal generator device. An amplitude of a test signal present at an antenna of the NFC tag device is measured. The test signal results from overlaying of the reference signal with the active load modulation signal. The following steps are repeated: modifying the value of the phase difference, providing the active load modulation signal with the modified value of the phase difference, measuring an amplitude of the test signal and comparing the measured amplitude with the previously measured amplitude until the measured amplitude fulfills a predefined condition. The value of the phase difference corresponding to the previously measured amplitude is stored.

Abstract: A method is for processing a channel analog signal coming from a transmission channel. The method may include converting the channel analog signal into a channel digital signal, and detecting a state of the transmission channel based on the channel digital signal to detect whether the transmission channel is, over an interval of time, one or more of linear and time invariant and linear and cyclostationary.

Abstract: The present disclosure relates to a method for the application of an antiwetting coating on at least one surface of a substrate of semiconductor material comprising the steps of: a) applying on said at least one surface a metal layer of a material chosen in the group constituted by noble metals, coining metals, their oxides and their alloys; and b) applying on said metal layer a layer of a thiol of formula R—SH, where R is a linear alkyl chain having from 3 to 20 carbon atoms and, optionally, at least one hetero-atom, for obtaining an antiwetting coating. The disclosure further regards a method for the production of a nozzle plate for ink-jet printing and to an integrated ink-jet printhead provided with a nozzle plate obtained according to the method of the disclosure.

Abstract: A pressure sensing assembly includes: a substrate; a pressure sensor on the substrate; a package, the substrate and the pressure sensor being embedded in the package; and a pressure adapter, with a first interface, external to the package and having a first area, and a second interface, coupled to the pressure sensor and having a second area, different from the first area. The pressure adapter is configured to transfer a force between the first interface and the second interface so that a pressure on the second interface is different from a pressure on the first interface.

Abstract: A strip of sacrificial semiconductor material is formed on top of a non-sacrificial semiconductor material substrate layer. A conformal layer of the non-sacrificial semiconductor material is epitaxially grown to cover the substrate layer and the strip of sacrificial semiconductor material. An etch is performed to selectively remove the strip of sacrificial semiconductor material and leave a hollow channel surrounded by the conformal layer and the substrate layer. Using an anneal, the conformal layer and the substrate layer are reflowed to produce an optical waveguide structure including the hollow channel.

Abstract: An electronic device disclosed herein includes a single photon avalanche diode (SPAD) configured to detect an incoming photon and to generate a first pulse signal in response thereto. Pulse shaping circuitry is configured to generate a second pulse signal from the first pulse signal by high pass filtering the first pulse signal. The pulse shaping circuitry includes a transistor drain-source coupled between a first node and a reference node, and a capacitor coupling the first node to an anode of the SPAD.

Abstract: An integrated circuit includes a semiconductor substrate and a multitude of electrically conductive pads situated between component zones of the semiconductor substrate and a first metallization level of the integrated circuit, respectively. The multitude of electrically conductive pads are encapsulated in an insulating region and include: first pads, in electrical contact with corresponding first component zones, and at least one second pad, not in electrical contact with a corresponding second component zone.

Abstract: An image sensor chip includes a semiconductor layer intended to receive illumination on a back face and comprising a matrix of pixels on a front face. An interconnection structure is arranged on the front face and a carrier is attached to the interconnection structure with a first face of the carrier facing the front face. An annular trench, arranged on a perimeter of the image sensor chip, extends from a second face of the carrier through an entire thickness of the carrier and into the interconnection structure. A via opening, arranged within the annual trench, extends from the second face of the carrier through the entire thickness of the carrier to reach a metal portion of the interconnection structure. The via opening an annual trench are lined with an insulating layer. The via opening include a metal conductor making an electrical connection to the metal portion.

Abstract: An integrated circuit includes an interconnection part with a via level situated between a lower metallization level and an upper metallization level. The lower metallization level is covered by an insulating encapsulation layer and an inter-metallization level insulating layer. An electrical discontinuity is provided between a via of the via level and a metal track of the lower metallization level. The electrical discontinuity is formed by an additional insulating layer having a material composition identical to that of the inter-metallization level insulating layer. The electrical discontinuity is situated between a bottom of the via and a top of the metal track, with the discontinuity being bordered by the insulating encapsulation layer.