Abstract: A method for processing content stored on a component is disclosed. A first partition of a first memory is encrypted with a first encryption key and a second partition of the first memory is encrypted with a second encryption key. The second encryption key is different from the first encryption key. The first encryption key is stored in a storage register of the component and the second encryption key is stored in a first location of a non-volatile memory. A memory address of the first location is stored in the first partition of the first memory.

Abstract: A method is provided for producing a microelectronic device provided with different strained areas in a superficial layer of a semi-conductor on insulator type substrate, including amorphizing a region of the superficial layer and then a lateral recrystallization of the region from crystalline areas adjoining the region.

Abstract: Embodiments are directed to super-junction semiconductor devices having an inactive region positioned between active cells. In one embodiment, a semiconductor device is provided that includes a substrate and a drain region on the substrate. The drain region has a first conductivity type. A plurality of first columns is disposed on the drain region, with the first columns having the first conductivity type. A plurality of second columns is disposed on the drain region, with the second columns having a second conductivity type. The first and second columns are alternately arranged such that each of the second columns is positioned between respective first columns. First and second gate structures are included that overlie respective first columns, and a body region is included that has the second conductivity type. The body region abuts at least two second columns and at least one first column positioned between the at least two second columns.

Abstract: A reference voltage generator circuit includes a circuit that generates a complementary to absolute temperature (CTAT) voltage and a proportional to absolute temperature (PTAT) current. An output current circuit generates, from the PTAT current, a sink PTAT current sunk from a first node and a source PTAT current sourced to a second node, wherein the sink and source PTAT currents are equal. A resistor is directly connected between the first node and the second node. A divider circuit divides the CTAT voltage to generate a divided CTAT voltage applied to the first node. A voltage at the second node is a fractional bandgap reference voltage equal to a sum of the divided CTAT voltage and a voltage drop across the resistor that is proportional to a resistor current equal to the sink and source PTAT currents.

Abstract: Digital image processing circuitry converts a macro-pixel of an image in a color filter array (CFA) color space to a macro-pixel in a luminance-chrominance (YUV) color space. Chrominance filtering is applied to chrominance components of the converted macro-pixel in the YUV color space, generating a filtered macro-pixel in the YUV color space. The filtered macro-pixel in the YUV color space is converted into a filtered macro-pixel in the CFA color space.

Abstract: During a phase of programming the cell, a first voltage is applied to the source region and a second voltage, higher than the first voltage, is applied to the drain region until the cell is put into conduction. The numerical value of the item of data to be written is controlled by the level of the control voltage applied to the control gate and the item of data is de facto written with the numerical value during the putting into conduction of the cell. The programming is then stopped.

Abstract: A method of making a structurally stable SiGe-on-insulator FinFET employs a silicon nitride liner to prevent de-stabilizing oxidation at the base of a SiGe fin. The silicon nitride liner blocks access of oxygen to the lower corners of the fin to facilitate fabrication of a high-concentration SiGe fin. The silicon nitride liner is effective as an oxide barrier even if its thickness is less than about 5 nm. Use of the SiN liner provides structural stability for fins that have higher germanium content, in the range of 25-55% germanium concentration.

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

Abstract: An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the substrate limited by an insulating region. To address compressive stress in the active region, the circuit further includes at least one electrically inactive trench located at least in the insulating region and containing an internal area configured to reduce compressive stress in the active region. The internal area is filled with polysilicon. The polysilicon filled trench may further extend through the insulating region and into the substrate.

Abstract: A protective circuit for an apparatus includes an accelerometer having an output and a microcontroller coupled to the output of the accelerometer. The protective circuit also includes a switch for controlling the apparatus coupled to an output of the microcontroller and a load coupled to the switch. A power source is coupled to the load and the switch. In operation the microcontroller is cable of sending a signal to the switch to turn of power to the load when a dangerous condition as detected from the accelerometer data has occurred.

Abstract: One or more embodiments are directed to semiconductor packages with one or more cantilever pads. In one embodiment a recess is located in a substrate of the package facing the cantilever pad. The cantilever pad includes a conductive pad on which a conductive ball is formed. The cantilever pad is configured to absorb stresses acting on the package.

Abstract: A method of interfacing an LC sensor with a control unit is described. The control unit may include first and second contacts, and the LC sensor may be connected between the first and second contacts. The method may include starting the oscillation of the LC sensor, and monitoring the voltage at the second contact, in which the voltage at the second contact corresponds to the sum of the voltage at the first contact and the voltage at the LC sensor. The voltage at the first contact may be varied such that the voltage at the second contact does not exceed an upper voltage threshold and does not fall below a lower voltage threshold.

Abstract: In accordance with an embodiment, a method of operating an electronic system includes detecting an incoming transmission on a power line, and modifying a switching behavior of a switched-mode power supply coupled to the power line upon detecting the incoming transmission. Modifying reduces the level of interference produced by the switched-mode power supply.

Abstract: An electronic device is formed by a sequence of at least two thyristors coupled in series in a same conduction direction. Each thyristor has a gate of a first conductivity type. The gates of the first conductivity type for the thyristors in the sequence are coupled together in order to form a single control gate.

Abstract: A capacitor has a variable capacitance settable by a bias voltage. A method for setting the bias voltage including the steps of: (a) injecting a constant current to bias the capacitor; (b) measuring the capacitor voltage at the end of a time interval; (c) calculating the capacitance value obtained at the end of the time interval; (d) comparing this value with a desired value; and (e) repeating steps (a) to (d) so as long as the calculated value is different from the set point value. When calculated value matches the set point value; the measured capacitor voltage is stored as a bias voltage to be applied to the capacitor for setting the variable capacitance.

Abstract: An encryption method includes accessing a look-up table (LUT) to implement countermeasures against side-channel attacks, such as embedding masks. The LUT is initialized by writing initialization values in the LUT by applying an address-mask to input data that identify a location of said LUT and a data-mask to data to be stored at a location of the LUT. The method includes carrying out an initialization of the LUT that includes providing at least one second address-mask and one second data-mask; and computing corresponding initialization values as a function of a logic combination of the aforesaid first address-mask and second address-mask and of a logic combination of the aforesaid first data-mask and second data-mask. In the resulting table the address data are masked only by the second address-mask and the data are masked only by the second data-mask. The structure of the LUT may allow convenient implementation by initializing all the values of the LUT in parallel in one cycle.

Abstract: An avalanche photodiode includes a cathode region and an anode region. A lateral insulating region including a barrier region and an insulating region surrounds the anode region. The cathode region forms a planar optical guide within a core of the cathode region, the guide being configured to guide photons generated during avalanche. The barrier region has a thickness extending through the planar optical guide to surround the core and prevent propagation of the photons beyond the barrier region. The core forms an electrical-confinement region for minority carriers generated within the core.

Abstract: A scan chain for testing a combinatorial logic circuit includes a first scan chain path of flip-flops connected to the combinatorial logic circuit for functional mode operation during runtime of the combinatorial logic circuit. A second scan chain path of flip-flops is also connected to the combinatorial logic circuit and supports both a shift mode and a capture mode. The second scan chain path operates in shift mode while the first scan chain path is connected to the combinatorial logic circuit for functional mode operation. The second scan chain is then connected to the combinatorial logic circuit when run time is interrupted and operates in capture mode to apply the test data to the combinatorial logic circuit.

Abstract: An autocorrective writing to a multiport static random access memory device is performed on at least one multiport static random access memory cell circuit. A first datum is written to the multiport static random access memory cell circuit and a second datum stored in the circuit is read from the multiport static random access memory cell subsequent to writing. The first and second data are compared. In response to the results of that comparison, an operation to rewriting the first datum to the circuit along with application of a write assist mechanism is selectively performed.

Abstract: An alternating current (AC) drive signal having a first frequency and a high logic level at a boosted supply voltage is applied to drive a capacitive sensing line of a capacitive touch panel. The boosted supply voltage is generated by boosting an input voltage. The voltage boosting is effectuate by a charge pump circuit operating synchronous to assertion of the AC drive signal with a charge transfer time that is adaptable to different capacitive load conditions.