Abstract: A clock selection circuit for selecting between two clock sources. The clock selection circuit has two independent clock inputs, CLK1 and CLK2, where no assumptions are made regarding frequency or phase relationship between the two clocks inputs. Two asynchronous inputs, START1 and START2 (both active high), are used to start and stop the clocks. As long as one clock is active, the START signal of the other clock will not have any effect. The invention includes interlock circuitry that ensures that at any given time only one clock is enabled to the output. Disabling the corresponding START signal disables the clock signal.

Abstract: A testable, prechargeable circuit has a driving circuit for producing a driving circuit output signal. A timing circuit receives a clock signal and the driving circuit output signal to cause an output of the testable, prechargeable circuit to be in a low state when the clock signal is low. The timing circuit also causes the output of the circuit to be timed with a state change in the clock signal to provide a domino logic output signal. Either a data signal or a test signal are multiplexed to the input of the driving circuit to produce respectively the domino logic output signal or a test output signal. A static logic circuit receives the test output signal to produce a test signal output.

Abstract: A method for providing a priority-based, low-collision distributed coordination function (DCF) in a wireless network is provided. The network includes an access point and a plurality of stations. The method includes receiving at a first station a super-frame from the access point. The super-frame is operable to define a service period for each of the stations. A priority for the first station is determined based on the super-frame. A back-off time is selected for the first station based on the priority.

Abstract: A method for providing a priority-based, low-collision distributed coordination function in a wireless network that includes a plurality of stations is provided. The method includes determining a priority for a first station and selecting a back-off time for the first station based on the priority.

Abstract: In one embodiment, a device includes but is not limited to: a first integrated circuit affixed to a substrate; an electronic circuit component affixed to the substrate; a first encapsulation structure encasing the first integrated circuit; a second integrated circuit affixed to the first encapsulation structure; and a second encapsulation structure which at least partially encases the first encapsulation structure, the first integrated circuit, and the electronic component.

Abstract: A modular multiple bit symbol demapper (1000) that processes pre-detected symbol values for multiple bit symbols. A symmetry of data bit decisions around higher order data bits is used to iteratively fold, by taking an absolute value (1204, 1208) in the exemplary embodiment, pre-detected values around a lower order bit decision point and shifting (1208) the folded values in order to reduce the decision of any arbitrary bit to a BPSK decision. The ultimately reduced BPSK decision is then performed by a standard BPSK soft decision circuit (500), which can be reused for all data bits being detected. Gray coding of the multiple bit symbols allows the data bit decision produced by this processing to be directly used as decided data outputs.

Abstract: This invention relates to a method for manufacturing a semiconductor device having polysilicon lines with micro-roughness on the surface. The micro-rough surface of the polysilicon lines help produce smaller grain size silicide film during the formation phase to reduce the sheet resistance. The micro-rough surface of the polysilicon lines also increases the effective surface area of the silicide contacting polysilicon lines thereby reduces the overall resistance of the final gate structure after metallization.

Abstract: A universal serial bus (USB) smart card can be automatically reset from a mute mode. A processor on the smart card writes its status to a status register. A USB device controller polls the status register to determine the status of the processor. If the status from the status register indicates that the processor has entered the mute mode, the USB device controller initiates generation of a reset signal to reset the processor out of the mute mode.

Abstract: An electronic circuit includes a selectively configurable differential signal interface and a selection control input for selecting one of a plurality of standard differential signal interfaces for configuration of the differential signal interface. The selection control input selects one of the following plurality of standard differential signal interfaces: reduced swing differential signaling (RSDS), low voltage differential signaling (LVDS), mini low voltage differential signaling (mini-LVDS), and bussed low voltage differential signaling (BLVDS), for configuration of the differential signal interface. The electronic circuit may also include a plurality of selectable voltage sources (611, 612, 613) and a plurality of selectable current sources (614, 615, 616, 617), for selecting, in response to an input signal at the selection control input, at least one of an operating D.C. voltage, a standard differential signal voltage, and a standard differential signal current for the differential signal interface.

Abstract: A method and circuit are disclosed for an integrated circuit having one or more memory cells, each memory cell including first and second p-channel transistor and first and second n-channel transistors configured as cross-coupled logic inverters between first and second reference voltage levels during a normal mode of operation. Power control circuitry is coupled to a source terminal of the first p-channel transistor of each memory cell for providing to the first p-channel transistors the first reference voltage level during the normal mode of operation. This causes a first voltage less than the first reference voltage level to appear at the source terminal of the first p-channel transistors during a data corruption mode of operation wherein data stored in the one or more memory cells is corrupted.

Abstract: A closed loop delay line system (700) includes a phase lock loop that provides a phase lock output signal (715). A delay line (702) includes a clock input, a delay line output, and a delay line bias input. A bias signal provided to the delay line bias input (727) adjusts the speed of the delay line (702). A phase detector (720) compares phase between a first timing signal input (704) and the delay line output (706). A bias adjust circuit (726) mixes the phase compare output signal (725) and the phase lock output signal (715) to provide a combination bias signal (727) to the delay line (702). Additionally, the relative timing position of strobe outputs (734) from the delay line (702) can be individually adjusted.

Abstract: A circuit and method are disclosed for a memory device, such as a phase change memory. Specifically, there is disclosed a memory having a plurality of columns of memory cells, with each column of memory cells being coupled to a bit or data line. Each memory cell includes a programmable resistive element coupled in series with a select transistor. Each bit line is coupled to a distinct reference cell and a distinct transistor. The transistor is coupled between the corresponding bit line and a reference voltage, such as ground. During a memory read operation, the transistor, reference cell and addressed memory cell form a differential amplifier circuit. The output of the differential amplifier circuit is coupled to the data output terminals of the phase change memory.

Abstract: A random access memory array includes first random access memory elements arranged in a plurality of rows and columns for storing data words at a multiple memory locations. The memory array further includes second random access memory elements arranged in at least one additional column. Each second random access memory element is associated with a memory location to store a flag value indicative of whether the data word stored at that memory location is a true or complement version. The individual memory elements may comprise magnetic random access memory elements. Alternatively, the individual memory elements may comprise flash memory cells.

Abstract: A method of manufacturing an integrated device that includes filling at least one channel region of a substrate with a sacrificial material to form a filled channel, forming an encapsulating layer over the filled channel, forming an aperture in the encapsulating layer, and selectively removing the sacrificial material in the channel region is described. The sacrificial material and etchant can be selected so that the sacrificial material is etched faster than the substrate and/or encapsulating layer. An integrated device having a substrate, at least one channel formed in the substrate, an encapsulating layer located over the substrate and over at least a portion of the channel, the encapsulating layer having at least one aperture located over the channel is also described.

Abstract: A magnetic random access memory element is made from a first magnetic tunnel junction and a second magnetic tunnel junction. A latching circuit includes a false node that is connected to the first magnetic tunnel junction and a true node that is connected to the second magnetic tunnel junction. A pair of complementary bit lines are provided in association with the element. A first access transistor inter-connects a false one of the bit lines to the false node of the latching circuit, while a second access transistor inter-connects a true one of the bit lines to the true node of the latching circuit. The memory element accordingly has an SRAM four transistor (4T) two load (2R) architecture wherein the resistances associated with the two magnetic tunnel junctions provide the two load resistances.

Abstract: A magnetic random access memory element is made from a first magnetic tunnel junction and a second magnetic tunnel junction. These magnetic tunnel junctions are connected to each other in a series resistive circuit. The connected first and second magnetic tunnel junctions are connected to a bit line through an access transistor. A write bit line and a write data line are associated with each of the first and second magnetic tunnel junctions. By application of appropriate currents to these lines, the magnetic vector orientation with each of the first and second magnetic tunnel junctions can be controlled so as to store information within the element in any one of at least three logic states.

Abstract: A static frequency divider circuit includes a first and second latch that are interconnected by a series path circuit and by a feedback path circuit. Each of the latches includes a reading branch and a latching branch. The series path circuit includes a push-pull current driver to speed state transitions between the latching branch of the first latch and the reading branch of the second latch. Similarly, feedback path circuit includes a push-pull current driver to speed state transitions between the latching branch of the second latch and the reading branch of the first latch.

Abstract: Variations in the actual resistance of a target poly resistor in a semiconductor integrated circuit can be compensated for by using an active circuit that provides a negative resistance in parallel with the target resistor. This produces a tuned resistance that is closer to a desired resistance than is the actual resistance of the target resistor.

Abstract: An integrated circuit package is provided with a thin-film battery electrically connected to and encapsulated with an integrated circuit die. The battery can be fabricated on a dedicated substrate, on the die pad, or on the integrated circuit die itself.

Abstract: A random access memory array includes random access memory elements arranged in a rows and columns. Each row is divided into a plurality of row groups of elements and each column is divided into a plurality of column groups of elements. The elements in each row group share a common local write digit line and the elements in each column group share a common local write bit line. The array further includes at least one global write digit line coupled to the common local write digit lines of plural row groups, and at least one global write bit line coupled to the common local write bit lines of plural column groups.