Abstract: A circuit for detecting the state of a switch having a first circuit which substantially periodically attempts to provide a voltage across the switch. A second circuit detects the state of the switch by monitoring the voltage across the switch, and responsively generates an output having a voltage level representative of the voltage appearing across the switch.

Abstract: A hard mask, e.g., a silicon dioxide or silicon nitride film, is used to avoid organic polymer materials in copper plasma etch applications. The hard mask would be deposited as a blanket layer on the Cu metal layer and itself be patterned and etched with a conventional photolithographic resist pattern. The hard mask etch is stopped shortly before the Cu surface is exposed. Halting the hard mask etch before the Cu surface is exposed facilitates the use of conventional cleaning processes following the hard mask etch. The remaining thin layer of hard mask can be etched through during the beginning of the Cu metal etch process. Any remaining hard mask deposited on the Cu metal layer can form a part of a new dielectric layer.

Abstract: The contact opening through an insulating layer is formed having a straight sidewall portion and a bowl shaped sidewall portion. The bowl shaped sidewall portion is near the top of the insulation layer to provide an enlarged diameter of the contact opening at the top relative to the bottom. A conductive material is then formed in the contact opening in electrical contact with a lower conductive layer. The conductive material forms a plug having an enlarged head, such as a nail head or a flat heat screw shape. The enlarged head protects the silicon and a barrier layer, if present, within the contact from being etched by any subsequent anisotropic etches. Thus, when an electrical interconnection layer such as aluminum is formed overlying the contact plug, the plug acts as an etch stop to prevent etching of a barrier layer of the barrier layer within the contact opening.

Abstract: A method and a bit counting device (100) count bits set to one in a data word of arbitrary size. The bit counting device (100) includes a first data register (110) for storing a data word, an offset register (112) for storing an offset value, a second data register (120), and a one-cycle shifter (114), electrically connected to the first data register (110), to the second data register (120), and to the offset register (112), for shifting the data word by a value stored in the offset register (112) and storing the shifted data word in the second data register (120).

Abstract: An integrated circuit for use with smart card and method are operative in both an ISO mode in accordance with the International Standards Organization 7816 (ISO 7816) protocol, and a non-ISO mode in accordance with a non-ISO protocol. The dual-mode integrated circuit includes a microprocessor and switching block. An external interface is connected to the switching block and comprises an ISO port operative for communicating in an ISO mode when the ISO mode is detected and a non-ISO port operative for communicating in a non-ISO mode when a non-ISO mode is detected. The ISO port is configured to allow debugging and/or software development through a serial interface in a non-ISO mode and the non-ISO port is configured to allow debugging and/or software development through the non-ISO port in an ISO mode.

Abstract: An integrated circuit for use with smart card and method are operative in both an ISO mode in accordance with the International Standards Organization 7816 (ISO 7816) protocol, and a non-ISO mode in accordance with a non-ISO protocol. The dual-mode integrated circuit includes a microprocessor and switching block. An external interface is connected to the switching block and comprises an ISO port operative for communicating in an ISO mode when the ISO mode is detected and a non-ISO port operative for communicating in a non-ISO mode when a non-ISO mode is detected. The ISO port is configured to allow debugging and/or software development through a serial interface in a non-ISO mode and the non-ISO port is configured to allow debugging and/or software development through the non-ISO port in an ISO mode.

Abstract: A circuit and method are disclosed for reducing soft errors in dynamic memory devices using error checking and correcting. In an exemplary embodiment, a memory device includes a dual port memory having a first port for externally-initiated memory access operations and a second port for handling memory access operations associated with error checking and error correction operations. An error module, coupled to the second port of the dual port memory, performs an error checking operation on words read from the dual port memory. An error controller, coupled to the error module, controls the error module to perform error check operations on each word sequentially read from the dual port memory through the second port thereof. The error checking is performed substantially in parallel with externally-initiated memory access operations performed using the first port of the dual port memory.

Abstract: A method, apparatus and network device for controlling the flow of network data arranged in frames and minimizing congestion, such as in the receive port of an HDLC controller is disclosed. A status error indicator is generated within a receive FIFO memory indicative of a frame overflow within the receive FIFO memory. In response to the status error indicator, an early congestion interrupt is generated to a host processor indicative that a frame overflow has occurred within the receive FIFO memory. The incoming frame is discarded and the services of received frames are enhanced by one of either increasing the number of words of a direct memory access (DMA) unit burst size, or modifying the time-slice of other active processes.

Abstract: In a packaged integrated circuit, electrostatic discharge protection is provided by portions of a lead frame on which the integrated circuit is mounted. The lead frame includes a die paddle on which an integrated circuit die is mounted, with plastic or epoxy material encapsulating exposed surfaces of the integrated circuit die except for a sensing surface, and supporting pins or leads formed from the lead frame. Portions of the lead frame extending from the die paddle are folded around sides of the encapsulated integrated circuit die and over, or adjacent to and level with, a peripheral upper surface of the encapsulated integrated circuit die to form an electrostatic discharge ring. The lead frame portions folded around the integrated circuit package are connected to ground through a ground pin, so that charge on a human finger touching the electrostatic discharge ring is dissipated to ground before the finger contacts a sensing surface of the integrated circuit.

Abstract: An integrated circuit and method for providing a switchover from the primary power source to the secondary power source to prevent a volatile element from losing stored data. The integrated circuit includes a forced power source switchover circuit for detecting that the supply level of the primary power source drops below a predefined threshold level. A switchover circuit on the integrated circuit initiates a switchover operation based upon the forced power source switchover circuit detecting that the supply level being received from the primary power source drops below the predefined threshold level. The detection by the forced power source switchover circuitry may occur on a signal level that transitions faster than a predetermined negative rate of change. The integrated circuit may be incorporated in any system having volatile elements, such as memory or a clock.

Abstract: A microprocessor and associated method includes a plurality of resources for executing instructions, and an out-of-order instruction shelf for priority/age tracking of the instructions. The instruction shelf has an instruction pool with a plurality of slots therein for storing respective instructions, and an instruction age tracker for storing therein a matrix of rows and columns of logic states associated with relative ages of instructions. The logic states in a given column and row of the matrix are associated with a respective slot of the instruction pool. Also, the microprocessor includes an instructions scheduler for performing at least one logic function on each column of the matrix to determine an oldest instruction, for dispatching instructions to the plurality of resources based thereon, and for updating the matrix based upon dispatched instructions.

Abstract: An integrated circuit for a smart card may include a universal serial bus (USB) transceiver and a microprocessor connected to the USB transceiver and operable in a test mode and a user mode. The microprocessor, when in the test mode, upon receiving at least one test request from the USB host device may cause the USB transceiver to output test data, read back the test data from the USB transceiver, compare the test data with the test data read back from USB transceiver, and generate test results for the USB host device based upon the comparison.

Abstract: A method of operating a vertical DMOS transistor associated with a Schottky diode, the method including diverting current from flowing through a body-to-drain pn junction diode to flowing through the Schottky diode when a metallic source contact becomes more positive than a drain of the DMOS transistor by forward conduction voltage of the Schottky diode to reduce the amount of source current reaching the substrate and reducing operational characteristics of parasitic devices associated with the integrated circuit.

Abstract: A method for removing heat from an active area of an integrated circuit device is provided. The method includes applying a separator to the active area of the integrated circuit device. A thermally conductive element is coupled to the active area of the integrated circuit device outwardly of the separator.

Abstract: In a first aspect, a method and an apparatus for processing an image classifies the image content of a portion of the image, and in response thereto, selects between linear interpolation (e.g., cubic) and non-linear interpolation (median) methods to interpolate data points for the portion of the image. In one embodiment, non-linear interpolation is selected if the image content of the portion of the image is bi-level, or if portion of the image includes an edge and lacks a specified measure of correlation along a line. Linear interpolation is used in portions where the image content does not include an identified edge and in portions where there is an identified edge in combination with an identified edge direction or a path of isobrightness.

Abstract: A memory device having a first and a second memory section, the first and the second memory sections being coupled to bit lines. The second memory section may include at least one fuse. The first memory section includes a volatile memory and the second memory section includes a non-volatile memory. The volatile memory may be static or dynamic random access memory. The memory device may further include a control circuit connected to the at least one fuse to provide for prelaser testing.

Abstract: In capacitive sensor circuits where physical contact is required and excess pressure may be inadvertently applied to the sensor surface, aluminum is not sufficiently hard to provide “scratch” protection and may delaminate, causing circuit failure, even if passivation integrity remains intact. Because hard passivation layers alone provide insufficient scratch resistance, at least the capacitive electrodes and preferably all metallization levels within the sensor circuit in the region of the capacitive electrodes between the surface and the active regions of the substrate are formed of a conductive material having a hardness greater than that of aluminum. The selected conductive material preferably has a hardness which is at least as great as the lowest hardness for any interlevel dielectric or passivation material employed.

Abstract: A gate structure in a transistor and method for fabricating the structure. A gate structure is formed on a substrate. The gate structure includes three layers: an oxide layer, a nitride layer and a polysilicon layer. The oxide layer is located on the substrate, the nitride layer is located on the oxide layer, and the polysilicon layer is located on the nitride layer. The gate structure is reoxidized to form a layer of oxide over the gate structure.

Abstract: An integrated circuit and method for providing a switchover from the primary power source to the secondary power source to prevent a volatile element from losing stored data. The integrated circuit includes a forced power source switchover circuit for detecting that the supply level of the primary power source drops below a predefined threshold level. A switchover circuit on the integrated circuit initiates a switchover operation based upon the forced power source switchover circuit detecting that the supply level being received from the primary power source drops below the predefined threshold level. The detection by the forced power source switchover circuitry may occur on a signal level that transitions faster than a predetermined negative rate of change. The integrated circuit may be incorporated in any system having volatile elements, such as memory or a clock.

Abstract: A circuit controls the gain of an amplifier that amplifies an information signal. The circuit includes a buffer that stores two samples of the amplified information signal, and includes a gain-determination circuit coupled to the buffer. The gain-determination circuit generates a gain adjustment that is based on the two samples and that causes the amplifier to shift the amplitude of the amplified information signal to or toward a predetermined amplitude. Such a circuit can provide an initial, coarse gain adjustment to a read-signal amplifier in a disk-drive read channel. Compared to prior read channels, this initial adjustment promotes faster settling of the amplifier gain at the beginning of a data sector. This faster settling allows the data sector to have a shorter preamble, and thus allows the disk to have a higher data-storage density.