Abstract: Ejection device for fluid, comprising a solid body including: first semiconductor body including a chamber for containing the fluid, an ejection nozzle in fluid connection with the chamber, and an actuator operatively connected to the chamber to generate, in use, one or more pressure waves in the fluid such as to cause ejection of the fluid from the ejection nozzle; and a second semiconductor body including a channel for feeding the fluid to the chamber, coupled to the first semiconductor body, in such a way that the channel is in fluid connection with the chamber. The second semiconductor body integrates a damping cavity over which extends a damping membrane, the damping cavity and the damping membrane extending laterally to the channel for feeding the fluid.

Abstract: In an embodiment, a device may include a first sensor configured to generate first sensor data during a first time period and a second time period; a second sensor configured to be disabled during the first time period, the second sensor further being configured to generate second sensor data during the second time period; and a processor configured to determine a characteristic of the first sensor data during the first time period. The device may further include a classifying circuit configured to determine, during the first time period, whether the device has changed state based on the characteristic of the first sensor data, the classifying circuit further being configured to cause the second sensor to be enabled in response to a change in a state of the device.

Abstract: A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes providing a stressed silicon-on-insulator (sSOI) wafer comprising a stressed semiconductor layer having first and second laterally adjacent stressed semiconductor portions. The first stressed semiconductor portion defines a first active region. The second stressed semiconductor portion is replaced with an unstressed semiconductor portion. The unstressed semiconductor portion includes a first semiconductor material. The method further includes driving a second semiconductor material into the first semiconductor material of the unstressed semiconductor portion defining a second active region.

Abstract: A MEMS pressure sensor packaged with a molding compound. The MEMS pressure sensor features a lead frame, a MEMS semiconductor die, a second semiconductor die, multiple pluralities of bonding wires, and a molding compound. The MEMS semiconductor die has an internal chamber, a sensing component, and apertures. The MEMS semiconductor die and the apertures are exposed to an ambient atmosphere. A method is desired to form a MEMS pressure sensor package that reduces defects caused by mold flashing and die cracking. Fabrication of the MEMS pressure sensor package comprises placing a lead frame on a lead frame tape; placing a MEMS semiconductor die adjacent to the lead frame and on the lead frame tape with the apertures facing the tape and being sealed thereby; attaching a second semiconductor die to the MEMS semiconductor die; attaching pluralities of bonding wires to form electrical connections between the MEMS semiconductor die, the second semiconductor die, and the lead frame; and forming a molding compound.

Abstract: A sensor chip is mounted on a PCB and electrically connected to a SOC mounted on the PCB via at least one conductive trace. The sensor chip includes configuration registers storing and outputting configuration data, and a PLD receiving digital data. The PLD performs an extraction of features of the digital data in accordance with the configuration data, and the configuration data includes changeable parameters of the extraction. A classification unit processes the extracted features of the digital data so as to generate a context of an electronic device into which the sensor chip is incorporated relative to its surroundings, the processing being performed in using a processing technique operating in accordance with the configuration data. The configuration data also includes changeable parameters of the processing technique. The classification unit outputs the context to data registers for storage.

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.

Abstract: The present disclosure is directed to a system that includes a sensor and a signal conditioner coupled to the sensor. The signal conditioner includes signal processing circuitry coupled to the sensor and offset cancellation circuitry. The offset cancellation circuitry includes a sign detector configured to output a high signal or a low signal based on a sign of an output signal from the signal processing circuitry, an integrator coupled to the sign detector, and a divider coupled to the integrator and to an input of the signal processing circuitry.

Abstract: Various embodiments provide an optical image stabilization circuit that synchronizes its gyroscope and drive circuit using gyroscope data ready signals and gyroscope reset signals. In response to a gyroscope data ready signal, the optical image stabilization circuit synchronously obtains position measurements of a camera lens when power drive signals are not transitioning from one power level to another power level, and synchronously transitions the power drive signals simultaneously with gyroscope reset signals. By synchronizing the gyroscope and the drive circuit, the gyroscope and other onboard sensing circuits are isolated from noise generated by the drive circuit.

Abstract: A semiconductor package formed utilizing a removable backside protective layer includes a leadframe, a die pad, leads and a molding compound around them. The first surface of the die pad and leads are exposed to an external environment by the plurality of recesses. The recesses are formed by coupling a removable backside protective layer to the leadframe before applying the molding compound. After the molding compound is applied and cured, the backside protective layer is removed to expose the first surface of the die pad and the first surfaces of the leads so the semiconductor package may be mounted within an electronic device. The removable backside protective layer protects the die pad and the leads from mold flashing and residue when forming the semiconductor package during the fabrication process.

Abstract: A powerline communications apparatus includes a transceiver communicating over an electrical power distribution wiring of a vehicle and a communications interface carrying a first and second PLC message in a first communication protocol having a PLC automotive network delimiter type, a PLCAN variant field comprising a number of users, user identifications, payload length, payload data, and a repetition number corresponding to a number of times the first PLC message is transmitted over the electrical power distribution wiring, and a first payload for a first user. The PLC apparatus also includes a processor and a non-transitory computer-readable medium storing programming for execution by the processor. The programming includes instructions for transmitting the first PLC message using the transceiver, determining if the vehicle is in motion, and switching between the first and the second communication protocol based on whether the vehicle is determined to be in motion.

Abstract: An encapsulated pressure sensor includes a pressure sensor having a pressure sensing surface and a mounting surface. The mounting surface is attached to a mounting substrate. A fluid contacts the pressure sensing surface of the pressure sensor. A deformable encapsulating member is attached to the mounting substrate and encapsulates the pressure sensor and the fluid.

Abstract: Various embodiments provide an optical image stabilization circuit that synchronizes its gyroscope and drive circuit using gyroscope data ready signals and gyroscope reset signals. In response to a gyroscope data ready signal, the optical image stabilization circuit synchronously obtains position measurements of a camera lens when power drive signals are not transitioning from one power level to another power level, and synchronously transitions the power drive signals simultaneously with gyroscope reset signals. By synchronizing the gyroscope and the drive circuit, the gyroscope and other onboard sensing circuits are isolated from noise generated by the drive circuit.

Abstract: In accordance with an embodiment, a network device includes a network controller and at least one network interface coupled to the network controller that includes at least one media access control (MAC) device configured to be coupled to at least one physical layer interface (PHY). The network controller may be configured to determine a network path comprising the at least one network interface that has a lowest power consumption and minimum security attributes of available media types coupled to the at least one PHY.

Abstract: A method of forming a finFET transistor device includes forming a crystalline, compressive strained silicon germanium (cSiGe) layer over a substrate; masking a first region of the cSiGe layer so as to expose a second region of the cSiGe layer; subjecting the exposed second region of the cSiGe layer to an implant process so as to amorphize a bottom portion thereof and transform the cSiGe layer in the second region to a relaxed SiGe (rSiGe) layer; performing an annealing process so as to recrystallize the rSiGe layer; epitaxially growing a tensile strained silicon layer on the rSiGe layer; and patterning fin structures in the tensile strained silicon layer and in the first region of the cSiGe layer.

Abstract: A flow rate sensor is provided in a wireless, leadless package. The flow rate sensor includes a MEMs sensor coupled to an ASIC and an antenna. The flow rate sensor is powered by radiation received from a control module adjacent the flow rate sensor. The flow rate sensor is placed within a fluid and monitors the flow rate of the fluid. The control module is not in the fluid and receives flow rate data from the flow rate sensor.

Abstract: Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel strained in a second manner. The gates may include, collectively, three or fewer metallic materials. The gates may share a same metallic material. A method of forming the semiconductor devices on an integrated circuit may include depositing first and second metallic layers in first and second regions of the integrated circuit corresponding to the first and second gates, respectively.

Abstract: A method of fabricating features of a vertical transistor include performing a first etch process to form a first portion of a fin in a substrate; depositing a spacer material on sidewalls of the first portion of the fin; performing a second etch process using the spacer material as a pattern to elongate the fin and form a second portion of the fin in the substrate, the second portion having a width that is greater than the first portion; oxidizing a region of the second portion of the fin beneath the spacer material to form an oxidized channel region; and removing the oxidized channel region to form a vacuum channel.

Abstract: Methods and structures for forming strained-channel FETs are described. A strain-inducing layer may be formed under stress in a silicon-on-insulator substrate below the insulator. Stress-relief cuts may be formed in the strain-inducing layer to relieve stress in the strain-inducing layer. The relief of stress can impart strain to an adjacent semiconductor layer. Strained-channel, fully-depleted SOI FETs and strained-channel finFETs may be formed from the adjacent semiconductor layer. The amount and type of strain may be controlled by etch depths and geometries of the stress-relief cuts and choice of materials for the strain-inducing layer.

Abstract: Multicast transmissions are efficient but do not allow for individual acknowledgement that the data was received by each receiver. This is not acceptable for isochronous systems that require specific levels of QoS for each device. A multimedia communications protocol is provided that uses a novel multi-destination burst transmission protocol in multimedia isochronous systems. The transmitter establishes a bi-directional burst mode for multicasting data to multiple devices and receiving Reverse Start of Frame (RSOF) delimiters from each multicast-destination receiver in response to multiple SOF delimiters, thus providing protocol-efficient multi-destination acknowledgements.

Abstract: An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.1×0.1 ?m2.