Abstract: A sequence of processing steps presented herein is used to embed an optical signal path within an array of nanowires, using only one lithography step. Using the techniques disclosed, it is not necessary to mask electrical features while forming optical features, and vice versa. Instead, optical and electrical signal paths can be created substantially simultaneously in the same masking cycle. This is made possible by a disparity in the widths of the respective features, the optical signal paths being significantly wider than the electrical ones. Using a damascene process, the structures of disparate widths are plated with metal that over-fills narrow trenches and under-fills a wide trench. An optical cladding material can then be deposited into the trench so as to surround an optical core for light transmission.

Abstract: A brush-cleaning apparatus is disclosed for use in cleaning a semiconductor wafer after polishing. Embodiments of the brush-cleaning apparatus implemented with a multi-branch chemical dispensing unit are applied beneficially to clean semiconductor wafers, post-polish, using a hybrid cleaning method. An exemplary hybrid cleaning method employs a two-chemical sequence in which first and second chemical treatment modules are separate from one another, and are followed by a pH-neutralizing—rinse that occurs in a treatment module separate from the first and second chemical treatment modules. Implementation of such hybrid methods is facilitated by the multi-branch chemical dispensing unit, which provides separate chemical lines to different chemical treatment modules, and dispenses chemical to at least four different areas of each wafer during single-wafer processing in an upright orientation.

Abstract: An electronic device includes a power switch having a control terminal coupled to a first node, a first conduction terminal coupled to a second node, and a second conduction terminal coupled to a third node. A monitoring circuit has a first input coupled to the first node and a second input coupled to the second node, the monitoring circuit to generate a monitor signal indicating gate oxide stress on the power switch as a function of first and second voltages received at the first and second inputs thereof. A protection circuit actuates to protect the power switch from the gate oxide stress when the monitor signal indicates the gate oxide stress on the power switch. The monitoring signal is generated based upon a comparison of currents generated based upon the voltages at the first and second node, as well as a current generated based upon a programmable reference voltage.

Abstract: A method of fabricating features of a vertical transistor include performing a first etch process to form a first portion of a fin in a substrate; depositing a spacer material on sidewalls of the first portion of the fin; performing a second etch process using the spacer material as a pattern to elongate the fin and form a second portion of the fin in the substrate, the second portion having a width that is greater than the first portion; oxidizing a region of the second portion of the fin beneath the spacer material to form an oxidized channel region; and removing the oxidized channel region to form a vacuum channel.

Abstract: A tensile strained silicon layer is patterned to form a first group of fins in a first substrate area and a second group of fins in a second substrate area. The second group of fins is covered with a tensile strained material, and an anneal is performed to relax the tensile strained silicon semiconductor material in the second group of fins and produce relaxed silicon semiconductor fins in the second area. The first group of fins is covered with a mask, and silicon-germanium material is provided on the relaxed silicon semiconductor fins. Germanium from the silicon germanium material is then driven into the relaxed silicon semiconductor fins to produce compressive strained silicon-germanium semiconductor fins in the second substrate area (from which p-channel finFET devices are formed). The mask is removed to reveal tensile strained silicon semiconductor fins in the first substrate area (from which n-channel finFET devices are formed).

Abstract: A system in package encloses a sensor and motor driver circuit. In an implementation, the sensor is an integrated circuit micro-electro-mechanical-systems (MEMS) sensor and the driver circuit is a motor driver circuit. Non-motor winding data information is sensed by the MEMS sensor and processed for the purpose of characterizing known fault patterns for motors; characterizing normal operation of the motor; and evaluating continued operation of the motor to detect abnormal motor behavior and instances of motor fault. The motor is driven using PWM control and the information output by the MEMS sensor is sampled at sampling times having a fixed timing relationship relative to the PWM control signals.

Abstract: A memory cell includes a substrate layer, with a plurality of silicided semiconductor fins stacked on the substrate layer and spaced apart from one another. A first metal liner layer is stacked on the plurality of silicided semiconductor fins and on the substrate layer. A plurality of first contact pillars are stacked on the first metal liner layer adjacent a different respective one of the plurality of silicided semiconductor fins. A configurable resistance structure covers portions of the first metal liner layer that are stacked on the substrate layer and portions of the first metal liner layer that are stacked on each of the plurality of silicided semiconductor fins. A metal fill layer is stacked on the configurable resistance structure. A plurality of second contact pillars is stacked on the metal fill layer adjacent a space between a different pair of adjacent silicided semiconductor fins of the plurality thereof.

Abstract: A method of making a semiconductor device includes forming a first spacer for at least one gate stack on a first semiconductor material layer, and forming a respective second spacer for each of source and drain regions adjacent the at least one gate. Each second spacer has a pair of opposing sidewalls and an end wall coupled thereto. The method includes filling the source and drain regions with a second semiconductor material while the first and second spacers provide confinement.

Abstract: An integrated circuit is provided having an active circuit. A heating element is adjacent to the active circuit and configured to heat the active circuit. A temperature sensor is also adjacent to the active circuit and configured to measure a temperature of the active circuit. A temperature controller is coupled to the active circuit and configured to receive a temperature signal from the temperature sensor. The temperature controller operates the heating element to heat the active circuit to maintain the temperature of the active circuit in a selected temperature range.

Abstract: A method for forming a semiconductor device includes forming a mask layer on a stressed semiconductor layer of a stressed, semiconductor-on-insulator wafer. An isolation trench bounding the stressed semiconductor layer is formed. The isolation trench extends through the mask layer and into the SOI wafer past an oxide layer thereof. A dielectric body is formed in the isolation trench. A relaxation reduction liner is formed on the dielectric body and on an adjacent sidewall of the stressed semiconductor layer. The mask layer on the stressed semiconductor layer is removed.

Abstract: According to principles as taught herein, a leadframe array for a semiconductor die is prepared having locations to receive solder balls. Solder balls are then applied to the leadframe array, after which the leadframe array and solder ball combination is placed in a first mold and encased in a first molding compound. After the molding compound is cured, a layer of molding compound is removed to expose the solder balls. After this, a semiconductor die is electrically connected to the exposed solder balls. The combined semiconductor die and leadframe are placed in a second mold, and a second molding compound injected. The second molding compound flows around the semiconductor die and leadframe combination, fully enclosing the electrical connections between the leadframe and the semiconductor die, making the final package a twice-molded configuration. After this, the twice-molded semiconductor package array is cut at the appropriate locations to singulate the packages into individual products.

Abstract: A voltage generator circuit uses a feedback loop to regulate an output voltage at an output node. A pair of opposite conductivity source-follower transistors are coupled to the output node. A first one of the source-follower transistors operates to provide a fast current transient for charging a capacitive load that is switchably connected to the output node. A second one of the source-follower transistor operate under feedback control to regulate the voltage level at the output node.

Abstract: Metal quantum dots are incorporated into doped source and drain regions of a MOSFET array to assist in controlling transistor performance by altering the energy gap of the semiconductor crystal. In a first example, the quantum dots are incorporated into ion-doped source and drain regions. In a second example, the quantum dots are incorporated into epitaxially doped source and drain regions.

Abstract: A semiconductor material is patterned to define elongated fins insulated from an underlying substrate. A polysilicon semiconductor material is deposited over and in between the elongated fins, and is patterned to define elongated gates extending to perpendicularly cross over the elongated fins at a transistor channel. Sidewall spacers are formed on side walls of the elongated gates. Portions of the elongated fins located between the elongated gates are removed, along with the underlying insulation, to expose the underlying substrate. One or more semiconductor material layers are then epitaxially grown from the underlying substrate at locations between the elongated gates. The one or more semiconductor material layers may include an undoped epi-layer and an overlying doped epi-layer. The epitaxial material defines a source or drain of the transistor.

Abstract: Embodiments of the present disclosure include an apparatus and a method for connecting a first device and second device. An apparatus includes an angled connector configured to connect to a first device to a second device, the first device and the second device configured to communicate through signal paths in the connector, the signal paths configured to pass digital data signals, a fastening device configured to secure the angled connector to the first device.

Abstract: A near field communications (NFC) transponder includes a transmit circuit coupled to a transmit antenna and a receive circuit coupled to a receive antenna. The transmit/receive antennae are configured such that no signal is induced on the receive antenna by operation of the transmit antenna. Advantageously, this permits continued reception by the receive antenna while the transmit antenna is used for transmission using active load modulation.

Abstract: Multicast transmissions do not allow for individual receivers to acknowledge that data was received by each receiver in the network. This is not acceptable for isochronous systems that require specific levels of QoS for each device. A multimedia communications protocol supports using multicast transmissions (one-to-many) in multimedia isochronous systems. A transmitter establishes a Multi-ACKed Multicast protocol within which a group of receiving devices can acknowledge the multicast transmission during a multi-acknowledgment period.

Abstract: A wireless power transmitting/receiving device includes a power transmitting/receiving element, a plurality of switches, a current sensor and a controller. Each of the plurality of switches has a control terminal and a conduction terminal, with the conduction terminal being coupled to the power transmitting/receiving element. The current sensor senses a current through the power transmitting/receiving element, and the controller is configured to control the plurality of switches based on the sensed current.

Abstract: A gyroscope includes a substrate, a first structure, a second structure and a third structure elastically coupled to the substrate and movable along a first axis. The first and second structure are arranged at opposite sides of the third structure with respect to the first axis A driving system is configured to oscillate the first and second structure along the first axis in phase with one another and in phase opposition with the third structure. The first, second and third structure are provided with respective sets of sensing electrodes, configured to be displaced along a second axis perpendicular to the first axis in response to rotations of the substrate about a third axis perpendicular to the first axis and to the second axis.

Abstract: A powerline communication system includes a plurality of rail segments. Each of the rail segments is electrically isolated from other rail segments, and each receives power from a rail segment power supply. At least one cart operates on the rail segments. The cart has a powerline communications controller. Each rail segment has a current state defined by how many and which carts are operating on the rail segment. A central coordinator is coupled to each rail segment and configured to execute a channel estimation using a sounding protocol on its rail segment. The central coordinators store tone maps associated with the possible states of its rail segment, and possibly its adjacent rail segment. A main controller communicates with each central coordinator to direct the state and future state of its segment so that tone maps and network keys can be managed by the CCo in advance of an imminent state change.