Patents Assigned to STMicroelectronics, Inc.
  • Patent number: 8767053
    Abstract: Methods and systems are described for enabling the viewing of positionally and orientationally modified stereoscopic video material using one or more participants with near-to-eye displays with video content appearance altered to accommodate changes in orientation and position of the display.
    Type: Grant
    Filed: August 26, 2010
    Date of Patent: July 1, 2014
    Assignee: STMicroelectronics, Inc.
    Inventor: Greg Neal
  • Patent number: 8766904
    Abstract: A controller for an LCD display is described. The controller can control an LED backlight that includes an array of LED lighting elements and an LCD panel that includes a number of pixels. The controller can modulate an individual or groups of the lighting elements in the LED backlight, such as dimming lighting elements, to control a light-field emitted from the LED backlight. The modulation of the lighting elements, such as dimming, can improve image contrast ratios that are generated using the LCD display. Methods and apparatus are described that can simplify calculations used to determine 1) the light-field generated by the LED backlight and 2) a correction factor for adjusting pixel data. The correction factor can be used to adjust an amount of light transmitted by each pixel in the LCD panel to compensate for the backlight producing a light-field that is brighter in some areas and dimmer in other areas.
    Type: Grant
    Filed: March 18, 2010
    Date of Patent: July 1, 2014
    Assignee: STMicroelectronics, Inc.
    Inventor: Greg Neal
  • Patent number: 8767777
    Abstract: A packet based display interface arranged to couple a multimedia source device to a multimedia sink device is disclosed that includes a transmitter unit coupled to the source device arranged to receive a source packet data stream in accordance with a native stream rate, a receiver unit coupled to the sink device, and a linking unit coupling the transmitter unit and the receiver unit arranged to transfer a multimedia data packet stream formed of a number of multimedia data packets based upon the source packet data stream in accordance with a link rate between the transmitter unit and the receiver unit.
    Type: Grant
    Filed: May 21, 2012
    Date of Patent: July 1, 2014
    Assignee: STMicroelectronics, Inc.
    Inventor: Osamu Kobayashi
  • Patent number: 8766435
    Abstract: An integrated circuit package is provided with a thin-film battery electrically connected to and encapsulated with an integrated circuit die. The battery can be fabricated on a dedicated substrate, on the die pad, or on the integrated circuit die itself.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: July 1, 2014
    Assignee: STMicroelectronics, Inc.
    Inventors: Michael J. Hundt, Haibin Du, Krishnan Kelappan, Frank Sigmund
  • Patent number: 8766955
    Abstract: Various methods, systems, and apparatus for implementing aspects of latency control in display devices are disclosed. According to aspects of the disclosed invention, a source device commands a display device to minimize the delay between the time that image data enters the display device and the time that it is shown on the display device. In one embodiment, the source device transmits data to the display device that specifies whether the display device should time optimize the image data, such as by transmitting a data packet for this purpose either with the image data or on an auxiliary communication link. In another embodiment, the source device and the display device are coupled via an interconnect that comprises multi-stream capabilities, and each stream is associated with a particular degree of latency optimization.
    Type: Grant
    Filed: July 25, 2007
    Date of Patent: July 1, 2014
    Assignee: STMicroelectronics, Inc.
    Inventors: Graham Loveridge, Osamu Kobayashi
  • Publication number: 20140175554
    Abstract: Channel-to-substrate leakage in a FinFET device can be prevented by inserting an insulating layer between the semiconducting channel (fin) and the substrate. Similarly, source/drain-to-substrate leakage in a FinFET device can be prevented by isolating the source/drain regions from the substrate by inserting an insulating layer between the source/drain regions and the substrate. The insulating layer isolates the conduction path from the substrate both physically and electrically, thus preventing current leakage. If an array of semiconducting fins is made up of a multi-layer stack, the bottom material can be removed thus yielding a fin array that is suspended above the silicon surface. A resulting gap underneath the remaining top fin material can then be filled in with oxide to better support the fins and to isolate the array of fins from the substrate. The resulting FinFET device is fully substrate-isolated in both the gate region and the source/drain regions.
    Type: Application
    Filed: December 21, 2012
    Publication date: June 26, 2014
    Applicant: STMICROELECTRONICS , INC.
    Inventors: Nicolas Loubet, Prasanna Khare
  • Publication number: 20140175610
    Abstract: A junction diode array for use in protecting integrated circuits from electrostatic discharge can be fabricated to include symmetric and/or asymmetric junction diodes of various sizes. The diodes can be configured to provide low voltage and current discharge via unencapsulated contacts, or high voltage and current discharge via encapsulated contacts. Use of tilted implants in fabricating the junction diode array allows a single hard mask to be used to implant multiple ion species. Furthermore, a different implant tilt angle can be chosen for each species, along with other parameters, (e.g., implant energy, implant mask thickness, and dimensions of the mask openings) so as to craft the shape of the implanted regions. Isolation regions can be inserted between already formed diodes, using the same implant hard mask if desired. A buried oxide layer can be used to prevent diffusion of dopants into the substrate beyond a selected depth.
    Type: Application
    Filed: December 21, 2012
    Publication date: June 26, 2014
    Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, STMICROELECTRONICS, INC.
    Inventors: John H. Zhang, Lawrence A. Clevenger, Carl Radens, Yiheng Xu
  • Publication number: 20140176587
    Abstract: An electronic system, an integrated circuit and a method for display are disclosed. The electronic system contains a first device, a memory and a video/audio compression/decompression device such as a decoder/encoder. The electronic system is configured to allow the first device and the video/audio compression/decompression device to share the memory. The electronic system may be included in a computer in which case the memory is a main memory. Memory access is accomplished by one or more memory interfaces, direct coupling of the memory to a bus, or direct coupling of the first device and decoder/encoder to a bus. An arbiter selectively provides access for the first device and/or the decoder/encoder to the memory based on priority. The arbiter may be monolithically integrated into a memory interface. The decoder may be a video decoder configured to comply with the MPEG-2 standard. The memory may store predicted images obtained from a preceding image.
    Type: Application
    Filed: March 3, 2014
    Publication date: June 26, 2014
    Applicant: STMicroelectronics, Inc
    Inventors: Jefferson Eugene Owen, Raul Zegers Diaz, Osvaldo Colavin
  • Patent number: 8761676
    Abstract: For enhanced interoperability of safety and non-safety communications, a synchronous interval is divided into a safety channel interval and an open interval instead of a CCH (control channel) interval and SCH (service channel) interval. For a single-radio device, a control interval, in place of an open interval should be scheduled at least once every maximum service scheduling period. Such a control interval is dedicated for CCH (and SCH) operation. For a multi-radio device, a control interval is scheduled at least once every maximum control interval on one of the radios support non-safety services (e.g. tolling).
    Type: Grant
    Filed: March 9, 2011
    Date of Patent: June 24, 2014
    Assignee: STMicroelectronics, Inc.
    Inventors: Wendong Hu, George A. Vlantis
  • Patent number: 8760461
    Abstract: Methods, chips, systems, computer program products and data structures are described for conducting modification of color video signals from a first color format associated with an originating format to a second format compatible with a display media of a display device.
    Type: Grant
    Filed: February 24, 2010
    Date of Patent: June 24, 2014
    Assignee: STMicroelectronics, Inc.
    Inventors: Osamu Kobayashi, Zisheng Le
  • Patent number: 8760952
    Abstract: Described herein are various principles for designing, manufacturing, and operating integrated circuits having functional components and one or more metal interconnect layers, where the dimensions of signal lines of the metal interconnect layers are larger than dimensions of the functional components. In some embodiments, a signal line may have a width greater than a width of a terminal of a functional component to which the signal line is connected. In some embodiments, two functional components formed in a same functional layer of the integrated circuit may be connected to metal signal lines in different metal interconnect layers. Further, the metal signal lines of the different metal interconnect layers may overlap some distance.
    Type: Grant
    Filed: December 17, 2010
    Date of Patent: June 24, 2014
    Assignee: STMicroelectronics, Inc.
    Inventor: David V. Carlson
  • Patent number: 8759965
    Abstract: A protective modular package assembly with one or more subassemblies, each having a base element, a sidewall element coupled to the base element, and a semiconductor device disposed within and coupled to the sidewall element and the base element; a protective modular package cover having fastening sections located at opposing ends of the cover, torque elements disposed on the opposing ends and configured to fasten the cover to a core, and subassembly receiving sections disposed between the fastening sections with each subassembly receiving section operable to receive a subassembly and having a cross member along the underside of the cover; and an adhesive layer configured to affix subassemblies to respective subassembly receiving sections. The torque elements are configured to transfer a downward clamping force generated at the fastening elements to a top surface of the subassemblies via the cross member of each of the one or more subassembly receiving sections.
    Type: Grant
    Filed: October 13, 2010
    Date of Patent: June 24, 2014
    Assignees: STMicroelectronics, Inc., RJR Polymers, Inc.
    Inventors: Craig J. Rotay, John Ni, David Lam, David Lee DeWire, John W. Roman, Richard J. Ross
  • Patent number: 8759874
    Abstract: Despite improvements in FinFETs and strained silicon devices, transistors continue to suffer performance degradation as device dimensions shrink. These include, in particular, leakage of charge between the semiconducting channel and the substrate. An isolated channel FinFET device prevents channel-to-substrate leakage by inserting an insulating layer between the channel (fin) and the substrate. The insulating layer isolates the fin from the substrate both physically and electrically. To form the isolated FinFET device, an array of bi-layer fins can be grown epitaxially from the silicon surface, between nitride columns that provide localized insulation between adjacent fins. Then, the lower fin layer can be removed, while leaving the upper fin layer, thus yielding an interdigitated array of nitride columns and semiconducting fins suspended above the silicon surface. A resulting gap underneath the upper fin layer can then be filled in with oxide to isolate the array of fin channels from the substrate.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: June 24, 2014
    Assignee: STMicroelectronics, Inc.
    Inventors: Nicolas Loubet, Prasanna Khare
  • Publication number: 20140170834
    Abstract: A method for manufacturing a hybrid SOI/bulk substrate, including the steps of starting from an SOI wafer comprising a single-crystal semiconductor layer called SOI layer, on an insulating layer, on a single-crystal semiconductor substrate; depositing on the SOI layer at least one masking layer and forming openings crossing the masking layer, the SOI layer, and the insulating layer, to reach the substrate; growing by a repeated alternation of selective epitaxy and partial etching steps a semiconductor material; and etching insulating trenches surrounding said openings filled with semiconductor material, while encroaching inwards over the periphery of the openings.
    Type: Application
    Filed: December 12, 2013
    Publication date: June 19, 2014
    Applicants: STMicroelectronics (Crolles 2) SAS, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, STMicroelectronics, Inc., STMicroelectronics S.A.
    Inventors: Claire Fenouillet-Beranger, Stephane Denorme, Nicolas Loubet, Qing Liu, Emmanuel Richard, Pierre Perreau
  • Patent number: 8754602
    Abstract: An embodiment of a motor controller includes a motor driver and a signal conditioner. The motor driver is configured to generate a motor-coil drive signal having a first component at a first frequency, and the signal conditioner is coupled to the motor driver and is configured to alter the first component. For example, if the first component of the motor-coil drive signal causes the motor to audibly vibrate (e.g., “whine”), then the signal conditioner may alter the amplitude or phase of the first component to reduce the vibration noise to below a threshold level.
    Type: Grant
    Filed: September 2, 2009
    Date of Patent: June 17, 2014
    Assignees: STMicroelectronics, Inc., STMicrolectronics S.r.l.
    Inventors: Frederic Bonvin, Ezio Galbiati
  • Publication number: 20140160801
    Abstract: A fly-back type switched current regulator includes a primary transformer winding coupled to receive a rectified DC signal derived from an AC signal. The drain of a power transistor is coupled to the primary winding, with the source of the power transistor coupled to an input of a comparison circuit and a primary transformer winding sense resistor. A control terminal of the power transistor is coupled to an output of the comparison circuit. A capacitor stores a variable reference signal for application at a first capacitor terminal to another input of the differential circuit. The variable reference signal is compared to a winding current signal generated by the sense resistor by the comparison circuit. An injection circuit applies an AC signal derived from the rectified DC signal to a second terminal of the capacitor so as to modulate the stored variable reference signal. The regulator is coupled to drive LEDs.
    Type: Application
    Filed: December 6, 2012
    Publication date: June 12, 2014
    Applicant: STMICROELECTRONICS, INC.
    Inventor: Thomas Stamm
  • Patent number: 8749183
    Abstract: An embodiment of a motor controller includes first and second supply nodes, a motor-coil node, an isolator, a motor driver, and a motor position signal generator. The isolator is coupled between the first and second supply nodes, and the motor driver is coupled to the second supply node and to the motor-coil node. The motor position signal generator is coupled to the isolator and is operable to generate, in response to the isolator, a motor-position signal that is related to a position of a motor having at least one coil coupled to the motor-coil node. By generating the motor-position signal in response to the isolator, the motor controller or another circuit may determine the at-rest or low-speed position of a motor without using an external coil-current-sense circuit.
    Type: Grant
    Filed: September 2, 2009
    Date of Patent: June 10, 2014
    Assignees: STMicroelectronics, Inc., STMicroelectronics S.r.l.
    Inventors: Frederic Bonvin, Agostino Mirabelli, Maurizio Nessi
  • Patent number: 8749486
    Abstract: A method and apparatus for touch detection, multi-touch detection and cursor control in which the acceleration of a control surface is sensed to provide sensed signals. The control surface is supported at one or more support positions and moves in response to a force applied by a user at a touch position. The sensed signals are received in a processing unit where they are used to estimate a change in the position of force application. A touch control signal is generated from the estimated change in touch position. The touch control signal may be output to a graphical user interface, where it may be used, for example, to control various elements such as mouse clicks, scroll controls, control of single or multiple cursors, or manipulation of views of an object on a visual display unit, or remote control manipulation of objects themselves.
    Type: Grant
    Filed: March 1, 2011
    Date of Patent: June 10, 2014
    Assignee: STMicroelectronics, Inc.
    Inventors: Darryn D. McDade, Sr., Hamid Mohammadi
  • Publication number: 20140151759
    Abstract: The presence of a facet or a void in an epitaxially grown crystal indicates that crystal growth has been interrupted by defects or by certain material boundaries. Faceting can be suppressed during epitaxial growth of silicon compounds that form source and drain regions of strained silicon transistors. It has been observed that faceting can occur when epitaxial layers of certain silicon compounds are grown adjacent to an oxide boundary, but faceting does not occur when the epitaxial layer is grown adjacent to a silicon boundary or adjacent to a nitride boundary. Because epitaxial growth of silicon compounds is often necessary in the vicinity of isolation trenches that are filled with oxide, techniques for suppression of faceting in these areas are of particular interest. One such technique, presented herein, is to line the isolation trenches with SiN to provide a barrier between the oxide and the region in which epitaxial growth is intended.
    Type: Application
    Filed: December 3, 2012
    Publication date: June 5, 2014
    Applicant: STMicroelectronics, Inc.
    Inventors: Nicolas Loubet, Prasanna Khare, Qing Liu
  • Publication number: 20140151746
    Abstract: Despite improvements in FinFETs and strained silicon devices, transistors continue to suffer performance degradation as device dimensions shrink. These include, in particular, leakage of charge between the semiconducting channel and the substrate. An isolated channel FinFET device prevents channel-to-substrate leakage by inserting an insulating layer between the channel (fin) and the substrate. The insulating layer isolates the fin from the substrate both physically and electrically. To form the isolated FinFET device, an array of bi-layer fins can be grown epitaxially from the silicon surface, between nitride columns that provide localized insulation between adjacent fins. Then, the lower fin layer can be removed, while leaving the upper fin layer, thus yielding an interdigitated array of nitride columns and semiconducting fins suspended above the silicon surface. A resulting gap underneath the upper fin layer can then be filled in with oxide to isolate the array of fin channels from the substrate.
    Type: Application
    Filed: November 30, 2012
    Publication date: June 5, 2014
    Applicant: STMicroelectronics, Inc.
    Inventors: Nicolas Loubet, Prasanna Khare