Abstract: In an embodiment, a processing system comprises a microprocessor programmable via software instructions, a memory controller configured to be coupled to a memory, a communication system coupling the microprocessors to the memory controller, a cryptographic co-processor and a first communication interface. The processing system also comprises first and second configurable DMA channels. In a first configuration, the first DMA channel is configured to transfer data from the memory to the cryptographic co-processor, and the second DMA channel is configured to transfer the encrypted data via two loops from the cryptographic co-processor to the first communication interface. In a second configuration, the second DMA channel is configured to transfer received data via two loops from the first communication interface to the cryptographic co-processor, and the first DMA channel is configured to transfer the decrypted data from the cryptographic co-processor to the memory.

Abstract: A phase-change memory (PCM) includes a semiconductor body housing a selection transistor; a electrical-insulation body disposed over the semiconductor body; a conductive region, extending through the electrical-insulation body, electrically coupled to the selection transistor; and a plurality of heater elements in the electrical-insulation body. Each of the plurality of heater elements include a first end in electrical contact with a respective portion of the conductive region and a second end that extends away from the conductive region. The PCM further includes a plurality of phase-change elements extending in the electrical-insulation body and including data storage regions, where each of the data storage regions being electrically and thermally coupled to one respective heater element at the second end of the respective heater element.

Abstract: The present disclosure relates to a method wherein a state of an integrated circuit between a first state (e.g., CLOSED), allowing a reading access to the first area of fuse-type non-volatile memory by a processor, and a second state (e.g., OPEN), forbidding the reading access to the memory to the processor, is conditioned to a verification, by a finite state machine, of values of a first fuse word of the memory, representative of a number of transitions to the first state and of a second fuse word of the memory, representative of a number of transitions to the second state.

Abstract: An inertial structure is elastically coupled through a first elastic structure to a supporting structure so as to move along a sensing axis as a function of a quantity to be detected. The inertial structure includes first and second inertial masses which are elastically coupled together by a second elastic structure to enable movement of the second inertial mass along the sensing axis. The first elastic structure has a lower elastic constant than the second elastic structure so that, in presence of the quantity to be detected, the inertial structure moves in a sensing direction until the first inertial mass stops against a stop structure and the second elastic mass can move further in the sensing direction. Once the quantity to be detected ends, the second inertial mass moves in a direction opposite to the sensing direction and detaches the first inertial mass from the stop structure.

Abstract: A semiconductor wafer includes first zones containing integrated circuits, each first zone including a substrate and a sealing ring at a periphery of the substrate. The first zones are separated from each other by second zones defining cutting lines or paths. The integrated circuit includes an electrically conductive fuse that extends between a first location inside the integrated circuit and a second location situated outside the integrated circuit beyond one of the cutting lines. This electrically conductive fuse includes a portion that passes through the sealing ring and another portion that straddles the adjacent cutting line. The portion of the fuse that passes through is electrically isolated from the sealing ring and from the substrate. The straddling portion is configured to be sliced, when cutting the wafer along the cutting line, so as to cause the fuse to change from an electrical on state to an electrical off state.

Abstract: An integrated circuit package includes a support substrate and a heat sink. A lateral wall of the heat sink is fastened on a mounting face of the support substrate by fastening devices. The fastening devices are accommodated in compartments of the lateral wall and cross the support substrate through the first orifices. The fastening devices and the first orifices are configured to enable fastening of the lateral wall on the mounting face and permit a relative movement of the fastening devices relative to the first orifices.

Abstract: The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.

Abstract: A base substrate has a thickness between two faces. The base substrate includes at least one hole extending in a thickness of the base substrate perpendicular to one of the two face. At least one dipole of a surface-mount device type is housed in the at least one hole of the base substrate.

Abstract: A voltage regulator receives a reference voltage and generates a regulated voltage using a MOSFET having a gate terminal configured to receive a control voltage. A charge pump receives the regulated voltage and generates a charge pump voltage in response to an enable signal and a clock signal generated in response to the enable signal. The voltage regulator further includes a first switched capacitor circuit coupled to the gate terminal and configured to selectively charge a first capacitor with a first current and impose a first voltage drop on the control voltage in response to assertion of the enable signal. The voltage regulator also includes a second switched capacitor circuit coupled to the gate terminal and configured to selectively charge a second capacitor with a second current and impose a second voltage drop on the control voltage in response to one logic state of the clock signal.

Abstract: Disclosed herein is an integrated component formed by a first wafer having first and second trenches defined in a top surface thereof, and a second wafer coupled to the first wafer and formed by a substrate with a structural layer thereon that integrated an electromagnetic radiation detector overlying the second trench. A first cap is coupled to the second wafer, overlies the electromagnetic radiation detector, and serves to define a first air-tight chamber in which the electromagnetic radiation detector is positioned. A stator, a rotor, and a mobile mass are integrated within the substrate and form a drive assembly for driving the mobile mass. The rotor overlies the first trench. A second cap is coupled to the second wafer, overlies the mobile mass, and serving to define a second air-tight chamber in which the mobile mass is positioned.

Abstract: A control circuit for controlling a switching stage of an electronic converter includes a first terminal configured to provide a drive signal and a second terminal configured to receive a first feedback signal. A third terminal receives a second feedback signal and a driver circuit provides the drive signal as a function of a PWM signal. A PWM signal generator circuit generates the PWM signal as a function of the first feedback signal, a reference threshold and the second feedback signal or a slope compensation signal. The control circuit is configured to sense an input signal, provide a first compensation parameter, and provide a first compensating signal as a function of a power of the input sensing signal.

Abstract: A microelectromechanical system (MEMS) gyroscope includes a driving mass and a driving circuit that operates to drive the driving mass in a mechanical oscillation at a resonant drive frequency. An oscillator generates a system clock that is independent of and asynchronous to the resonant drive frequency. A clock generator circuit outputs a first clock and a second clock that are derived from the system clock. The drive loop of the driving circuit including an analog-to-digital converter (ADC) circuit that is clocked by the first clock and a digital signal processing (DSP) circuit that is clocked by the second clock.

Abstract: In an embodiment, a phase circuit includes: a bidirectional output stage configured to be coupled between a first battery and a second battery; a memory configured to store a number of active phases, and an identifier; and a synchronization circuit configured to receive a first clock signal and determine a start time of a switching cycle of the bidirectional output stage based on the number of active phases, the identifier, and the first clock signal, where the phase circuit is configured to control the timing of the switching of the bidirectional output stage based on the start time.

Abstract: According to an embodiment, a method for a touch scan is proposed. The method includes operating a device in first and second modes corresponding to the device, respectively, being wirelessly and not wirelessly charged. In each mode for each frame, the method includes dividing a frequency range corresponding to a touch-sensing technology into M or N positive integer numbers of equal and sequential frequency intervals, where N is greater than M. In the first mode, the method includes determining a first frequency interval of the M frequency intervals with the least noise and performing the touch scan using a first frequency within the first frequency interval. In the second mode for each frame, the method includes determining a second frequency interval of the N frequency intervals with the least noise and performing the touch scan using a second frequency within the second frequency interval.

Abstract: An electronic device applies a frequency offset function to a first signal having a first frequency. The device includes a delay element configured to output a second signal corresponding to the first signal delayed by a duration equal to a first period of said signal divided by four. A circuit branch includes a first circuit configured to divide the frequency of the first signal by a given number coupled in series with a second circuit configured to implement an integration. The circuit branch outputs a third signal and a fourth signal. A single side band mixing circuit processes the first signal, second signal, third signal and fourth signal to generate an output signal.

Abstract: A method performs a correction of an ionospheric error affecting pseudo-ranges measurements in a GNSS receiver receiving a plurality of satellite signals from a plurality of satellites of a constellation of satellites. The method is part of a navigation processing procedure performed at the GNSS receiver. The method utilizes pseudo range measurements previously calculated by the GNSS receiver, obtained from a plurality of carrier signals in the satellite signals. The method includes performing a correction procedure of the pseudo-range measurements, by calculating ionospheric error correction values for the pseudo-range measurements.

Abstract: A semiconductor die is arranged at a first surface of a die pad. The die pad has a peripheral edge and a second surface opposite to the first surface that includes a first region and a second region surrounding the first region. The second region extends to the peripheral edge of the die pad from a border line at the first region and includes a recessed formation extending continuously along the border line. An insulating encapsulation is molded onto the die pad with the first region of the second surface left uncovered and the second region of the second surface of the die pad being covered by the insulating encapsulation that fills the recessed formation. The recessed formation has a variable recess depth between the border line and the peripheral edge of the die pad to provide an extended length delamination path from the border line to the semiconductor die.

Abstract: The HEMT device has a body including a heterostructure configured to generate a 2-dimensional charge-carrier gas; and a gate structure which extends on a top surface of the body and is biasable to electrically control the 2-dimensional charge-carrier gas. The gate structure has a channel modulating region of semiconductor material; a functional region of semiconductor material; and a gate contact region of conductive material. The functional region and the gate contact region extend on a top surface of the channel modulating region and the gate contact region is arranged laterally with respect to the functional region. The channel modulating region has a different conductivity type with respect to the functional region.

Abstract: A method for manufacturing a MEMS device includes forming a first solid body by forming, on a substrate, a layered structure having a thickness of a value comprised between 4 and 10 ?m, with the layered structure having a first surface that is uniformly flat or planar throughout the extension thereof that faces the substrate. The method further includes forming, on a second surface of the layered structure opposite to the first surface in a direction, multiple transducer devices. The method then proceeds with coupling the first solid body to a supporting structure, and completely removing the substrate to expose said uniformly flat or planar surface.

Abstract: The present disclosure is directed to an optical sensor package with light shielding material covering five sides. The optical sensor package includes a transparent layer, a substrate layer, sensor elements between the transparent layer and the substrate layer, a first layer of light shielding material on the side of the substrate layer opposite the transparent layer, and a second layer of light shielding material covering five sides of the optical sensor package. The first and second layers of light shielding material prevent light from entering the sides of the optical sensor package or from traveling through the substrate layer and reflecting toward the sensor elements.