Abstract: A device for measuring an electrical impedance of biologic tissue may include electrodes configured to contact the biologic tissue and generate a differential voltage thereon. The device may include a first circuit coupled to the electrodes and configured to force an oscillating input signal therethrough, and a differential amplitude modulation (AM) demodulator coupled to the plurality of electrodes. The differential AM demodulator may be configured to demodulate the differential voltage, and generate a base-band signal representative of the demodulated differential voltage. The device may further include an output circuit downstream from the differential AM demodulator and may be configured to generate an output signal representative of the electrical impedance as a function of the base-band signal.

Abstract: A DC-DC converter includes a transformer having primary and secondary windings, a power oscillator applying an oscillating signal to the primary winding to transmit a power signal to the secondary winding, a rectifier obtaining an output DC voltage by rectifying the power signal at the secondary winding, and comparison circuitry generating an error signal representing a difference between the output DC voltage and a reference voltage value. A transmitter connected to the secondary winding performs an amplitude modulation of the power signal at the secondary winding to transmit an amplitude modulated power signal to the primary winding, the amplitude modulation based upon the error signal and modulating a stream of data to the primary winding. A receiver coupled to the primary winding demodulates the amplitude modulated power signal to recover the error signal and the stream of data. An amplitude of the oscillating signal is controlled by the error signal.

Abstract: A sense structure includes: a sense amplifier core configured to compare a measurement current with a reference current; a cascode transistor coupled to the sense amplifier core and configured to be coupled to a load; a switch coupled between a bias voltage node and a control terminal of the cascode transistor; a local capacitor having a first terminal coupled to the control terminal of the cascode transistor; a first transistor coupled between a second terminal of the local capacitor and a reference terminal; and a control circuit coupled to a control terminal of the first transistor, the control circuit configured to disconnect the local capacitor from the reference terminal to produce a voltage overshoot in the control terminal of the cascode transistor, and after disconnecting the local capacitor from the reference terminal, limit or reduce the voltage overshoot by adjusting a voltage of the control terminal of the first transistor.

Abstract: A switching cell includes: a half-bridge circuit including a first electronic switch and a second electronic switch connected in series between a first input terminal and a second input terminal of an electronic converter, wherein a first capacitor is connected in parallel to the first electronic switch and a second capacitor is connected in parallel to the second electronic switch; a first inductor connected between a first output terminal of the electronic converter and an intermediate point between the first electronic switch and the second electronic switch; a second inductor and a first capacitor connected in series between a first terminal of the first inductor and the intermediate point; a switching circuit connected between the first terminal of the first inductor and a second output terminal of the electronic converter; and a third capacitance connected between the first terminal of the first inductor and the second input terminal.

Abstract: According to principles as discussed herein, an EEPROM cell is provided and then, after testing the code, using the exact same architecture, transistors, memory cells, and layout, the EEPROM cell is converted to a read-only memory (“ROM”) cell. This conversion is done on the very same integrated circuit die using the same layout, design, and timing with only a single change in an upper level mask in the memory array. In one embodiment, the mask change is the via mask connecting metal 1 to poly. This allows the flexibility to store the programming code as non-volatile memory code, and then after it has been tested, at time selected by the customer, some or all of that code from a code that can be written to a read-only code that is stored in a ROM cell that is composed the same transistors and having the same layout.

Abstract: A memory device includes an array of phase-change memory cells and a word line. The memory device includes a control circuit, a first pull-up MOSFET and a second pull-up MOSFET connected in series between a first power-supply node set at a first supply voltage and the word line, a first pull-down MOSFET and a second pull-down MOSFET connected in series between the word line and a second power-supply node set at a reference potential, and a biasing MOSFET connected between the word line and a third power-supply node set at a second supply voltage higher than the first supply voltage. The first and second pull-up MOSFETs and the first and second pull-down MOSFETs have breakdown voltages lower than the breakdown voltage of the biasing MOSFET.

Abstract: A sense terminal is configured to sense a drain-to-source voltage of a field effect transistor and a drive terminal is configured to drive the gate terminal of the field effect transistor to alternatively turn the field effect transistor on and off to provide a rectified current flow in the field effect transistor channel. A comparator is configured to perform a comparison of the drain-to-source voltage of the field effect transistor with a reference threshold and to detect alternate downward and upward crossings of the reference threshold and the drain-to-source voltage. A PWM signal generator is configured to drive the gate terminal of the field effect transistor to turn the field effect transistor on and off as a result of the alternate downward and upward crossings of the reference threshold by the drain-to-source voltage.

Abstract: A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.

Abstract: The present disclosure is directed to a microfluidic die that includes a plurality of heaters above a substrate, a plurality of chambers and nozzles above the heaters, a plurality of first contacts coupled to the heaters, and a plurality of second contacts coupled to the heaters. The plurality of second contacts are coupled to each other and coupled to ground. The die includes a plurality of contact pads, a first signal line coupled to the plurality of second contacts and to a first one of the plurality of contact pads, and a plurality of second signal lines, each second signal line being coupled to one of the plurality of first contacts, groups of the second signal lines being coupled together to drive a group of the plurality of heaters with a single signal, each group of the second signal lines being coupled to a remaining one of the plurality of contact pads.

Abstract: A micro-electro-mechanical (MEMS) device is formed in a first wafer overlying and bonded to a second wafer. The first wafer includes a fixed part, a movable part, and elastic elements that elastically couple the movable part and the fixed part. The movable part further carries actuation elements configured to control a relative movement, such as a rotation, of the movable part with respect to the fixed part. The second wafer is bonded to the first wafer through projections extending from the first wafer. The projections may, for example, be formed by selectively removing part of a semiconductor layer. A composite wafer formed by the first and second wafers is cut to form many MEMS devices.

Abstract: Radiofrequency energy that is captured by a radiofrequency power harvester is stored in a storage capacitance. One or more user circuits are supplied with energy stored in the storage capacitance. The harvester operates in alternated charge and burst phases with captured radiofrequency energy stored in the storage capacitance in the charge phases and supplied to the user circuits in the burst phases to perform user circuit tasks. In response to detection of completion of the user circuit tasks in a burst phase, the harvester causes operation to shift to the next charge phase.

Abstract: A circuit includes an input terminal and a regulated supply line for supplying an electronic device with an electrostatic discharge protection and driver circuit for the electronic device. The supply line is coupled to the input terminal via the circuitry, so that current injected into the input terminal may produce a voltage increase on the regulated supply line. A comparator sensitive to the voltage at the input terminal and the voltage on the supply line is provided. A current sink coupled with the supply line and being activatable to sink current from the supply line is also provided. The comparator is configured for activating the current sink as a result of the voltage at the input terminal exceeding the voltage on the supply line of a certain intervention threshold.

Abstract: In an HEMT device, a gate region is formed in a wafer having a channel layer, a barrier layer, and a passivation layer, overlying each other. Drain and source electrodes are formed in the wafer, on different sides of the gate region. A dielectric layer is formed over the gate region and over the passivation layer. Selective portions of the dielectric layer are removed by a plurality of etches so as to form one or more cavities between the gate region and the drain electrode. The one or more cavities have a plurality of steps at an increasing distance from the wafer moving from the gate region to the drain electrode. The cavity is then filled with conductive material to form a field plate coupled to the source electrode, extending over the gate region, and having a surface facing the wafer and having a plurality of steps.

Abstract: A demodulator demodulates an in-phase component of an input signal which is in-phase and quadrature modulated. The demodulator includes a register storing a phase calibration value having an integer part and a fractional part. A noise-shaping modulator generates a succession of quantized values of integer type, the quantized values having a mean equal to the phase calibration value. A generating stage generates a demodulating signal phase locked with the input signal, the demodulating signal having a phase which depends linearly on the quantized values. A demodulating stage demodulates the input signal by means of the demodulating signal.

Abstract: A latch is provided. The latch includes a plurality of storage nodes including a plurality of data storage nodes configured to store a data bit having one of two states and a plurality of complementary data storage nodes configured to store a complement of the data bit. The latch includes a plurality of supply voltage multi-dependency stages respectively corresponding to the plurality of storage nodes. Each supply voltage multi-dependency stage has an output coupled to a storage node and at least two control inputs respectively coupled to at least two other storage nodes of the plurality of storage nodes. The supply voltage multi-dependency stage is configured to cause a state of the data bit stored in the storage node to change from a first state to a second state in response a change in both states of two data bits respectively stored in the at least two other storage nodes.

Abstract: An integrated circuit is fabricated on a semiconductor material die and adapted to be at least partly tested wirelessly. Circuitry for setting a selected radio communication frequency to be used for the wireless test of the integrated circuit is integrated on the semiconductor material die.

Abstract: A sensor includes a first transistor including a first terminal and a second terminal defining a current path, and a first gate terminal configured to receive a drive signal. The sensor further includes a sensor circuit configured to generate a measurement signal indicative of a first current flowing through the first transistor. The sensor circuit includes a second transistor including a third terminal, a fourth terminal, and a second gate terminal. The third terminal is connected to the first terminal of the first transistor. The second gate terminal is configured to receive the drive signal. The second transistor is a scaled version of the first transistor. The sensor circuit further includes an operational amplifier, a variable current source, a current mirror, and a measurement circuit.

Abstract: A method for forming an electronic device includes embedding an integrated circuit die in a package including substrate of thermally conductive material with front and back surfaces and a through-hole. The die is sunk in the through-hole. A first insulating material layer covers the die front surface and the package front surface with first windows for accessing die terminals. Package terminals and package track are arranged on the first insulating layer. A second insulating material layer covers the first insulating layer and the package tracks with second windows for accessing the package terminals.

Abstract: A device for dispensing a fluid includes a fixed part to be worn by a user, a fluid connection including a terminal outlet, a needle coupled to the terminal outlet of the fluid connection for dispensing a fluid, and a replaceable part coupled to the fixed part via the fluid connection. The replaceable part includes a reservoir for containing the fluid to be dispensed, and a micro-pump coupled to the reservoir to send the fluid to the fixed part through the fluid connection. An actuator operates the micro-pump. The fixed part includes a pressure-sensor in proximity to the terminal outlet of the fluid connection and is associated with dispensing the fluid from the needle. An electronic control module controls operation of the micro-pump via the pressure-sensor.

Abstract: A die has a positional location in a wafer defined by first and second coordinates, the first and second coordinates identifying a respective horizontal and vertical location where the die was formed. An index formed on the die has a first comb structure of a first contiguous arrangement of first dots, and a second comb structure of a second contiguous arrangement of second dots. A first marker at a selected one of the first dots indicates a first digit of the first coordinate, and a first additional marker at a selected one of the first dots indicates a second digit of the first coordinate. A second marker at a selected one of the second dots indicates a first digit of the second coordinate, and a second additional marker at a selected one of the second dots indicates a second digit of the second coordinate.