Abstract: A current generator includes a thermistor configured to receive an input current, a reference resistor having a resistance substantially corresponding to a resistance of said thermistor at a reference temperature, a current mirror configured to generate a mirrored current proportional to said input current, a feedback circuit configured to generate an output compensation current proportional to a difference between voltages on said reference resistor and on said thermistor, and a first adder configured to force through said reference resistor a difference current between said mirrored replica current and said output compensation current.

Abstract: A process for manufacturing a semiconductor device, wherein a semiconductor layer is formed on a body of semiconductor material; a first mask is formed on the semiconductor layer; a first conductive region is implanted in the body using the first mask; a second mask is formed laterally and complementarily to the first mask, at least in a projection in a plane parallel to the surface of the body; a second conductive region is implanted in the body using the second mask, in an adjacent and complementary position to the first conductive region; spacers are formed on the sides of the second mask region, to form a third mask aligned to the second mask; and, using the third mask, portions of the semiconductor layer are removed to form a gate region.

Abstract: An integrated magnetic-field sensor designed to detect an external magnetic field, comprising a first magnetoresistive structure for detecting the external magnetic field, the first magnetoresistive structure including first magnetoresistive means having a main axis of magnetization and a secondary axis of magnetization set orthogonal to one another. The magnetic-field sensor further comprises a magnetic-field generator, including a first portion configured for generating a first magnetic field having field lines in a first field direction, and a second portion, which is coplanar and is connected to the first portion, configured for generating a second magnetic field having field lines in a second field direction, the first magnetoresistive means being configured so that the main axis of magnetization extends parallel to the first field direction, and the secondary axis of magnetization extends parallel to the second field direction.

Abstract: To verify robustness with respect to electrical overstresses of an electronic circuit under test, the latter is exposed to electrical overstresses, and the behavior thereof is monitored. In particular, both the testing of the electronic circuit in dynamic conditions is performed by causing it to be traversed by the currents that characterize operation thereof, and by exposing at least one supply line of the electronic circuit under test to electrical overstresses and the testing of the electronic circuit under test in static conditions, without causing it to be traversed by the currents that characterize operation thereof, and by exposing to electrical overstresses both the supply and the input and/or output lines of the electronic circuit under test. The device for generating the overstresses can be mounted on a circuit board, which can be coupled as daughter board to a mother board, on which the electronic circuit under test is mounted.

Abstract: A method of calibrating a temperature sensor of a chemical microreactor envisages: determining an airflow along a path in such a way as to cause a thermal exchange between the airflow and a chemical microreactor, which is provided with an on-board temperature sensor and is set along the path; and detecting a temperature in the airflow downstream of the microreactor, in conditions of thermal equilibrium.

Abstract: Described herein is a biasing circuit for a magnetic-field sensor; the magnetic-field sensor is provided with a first detection structure, which generates a first electrical detection quantity as a function of a first component of an external magnetic field, and a second detection structure, which generates a second electrical detection quantity as a function of a second component of an external magnetic field. The biasing circuit electrically supplies the first detection structure and the second detection structure in respective biasing time intervals, at least partially distinct from one another, which preferably do not temporally overlap one other.

Abstract: An electronic system includes an insulating structural element with a coupling surface configured for coupling the electronic system with at least one further electronic system. The electronic system further includes at least one conducting contact element at least partially exposed on the coupling surface. Each conducting contact element has a soldering surface supporting reflow soldering of the conducting contact element with a corresponding further contact element of the further electronic system. In addition, each conducting contact element has at least one lateral surface protruding from the insulating structural element. The soldering surface of the conducting contact element includes at least one channel having an opened end at the protruding lateral surface, the channel configured to facilitate dispersion of waste gas produced during reflow soldering.

Abstract: The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.

Abstract: An electronic board includes conducting traces having an upper surface at least partially sunken with respect to a gluing surface of the board. A surface mount technology electronic device for mounting to the board includes insulating windows that define gluing sites within one or more pins. An electronic system is formed by one or more of such surface mount technology electronic devices mounted to electronic board. The devices are attached using a wave soldering technique that flows through channels formed by the sunken conductive traces.

Abstract: A switching system for a combustion engine ignition system comprises a switching device switchable between an accumulation condition and a transfer condition to activate an ignition element. The switching system comprises control logic that provides a control signal for controlling the switching device, measures a progress indicator indicative of progress in switching the switching device from the transfer condition to the accumulation condition, and causes the control signal to vary with a first variation rate during a first stage until the progress indicator reaches a first progress condition. The control logic causes the control signal to vary with a second variation rate, lower than the first variation rate, during a second stage until the progress indicator reaches a second progress condition, and causes the control signal to vary with a third variation rate, higher than the second variation rate, during a third stage of the preliminary switching.

Abstract: A system for scanning a frequency spectrum to detect usage thereof includes an ultra-wideband receiver for performing the scanning, and cooperates with a spectrum usage estimator module and a radio controller unit. The spectrum usage estimator module derives from the scanning performed via the ultra-wideband receiver information as to usage of individual bands in the frequency spectrum. The radio controller unit controls operation of a radio cognitive system as a function of the information as to usage of individual bands in the frequency spectrum as derived by the spectrum usage estimator module. The radio cognitive system operates over unused bands in the frequency spectrum.

Abstract: A hardware architecture is applied to the calculation of a Difference-of-Gaussian filter, which is typically employed in image processing algorithms. The architecture has a modular structure to easily allow the matching of the desired delay/area ratio as well as a high computational accuracy. A new solution is provided for the implementation of multiply-accumulators which allows a significant reduction of area with respect to the conventional architectures.

Abstract: A reading circuit for a magnetic-field sensor, generating an electrical detection quantity as a function of a detected magnetic field and of a detection sensitivity, is provided with an amplification stage, which is coupled to the magnetic-field sensor and generates an output signal as a function of the electrical detection quantity and of an amplification gain. In particular, the amplification gain is electronically selectable, and the reading circuit is moreover provided with a calibration stage, integrated with the amplification stage and configured so as to vary a value of the amplification gain in such a way as to compensate a variation of the detection sensitivity with respect to a nominal sensitivity value.

Abstract: A method, apparatus, and computer program for detecting sequences of digitally modulated symbols transmitted by multiple sources are provided. A real-domain representation that separately treats in-phase and quadrature components of a received vector, channel gains, and a transmitted vector transmitted by the multiple sources is determined. The real-domain representation is processed to obtain a triangular matrix. In addition, at least one of the following is performed: (i) hard decision detection of a transmitted sequence and demapping of corresponding bits based on a reduced complexity search of a number of transmit sequences, and (ii) generation of bit soft-output values based on the reduced complexity search of the number of transmit sequences. The reduced complexity search is based on the triangular matrix.

Abstract: A register file organization is used to support multiple accesses from more than one processor or pipeline. This shared register file is organized for a multiple processor device that includes a high performance (HP) and a low power (LP) core. The shared register file includes separate HP and LP storage units coupled to separate HP and LP write and read ports.

Abstract: A sigma-delta converter may include an input node, a switched capacitor input stage integrating a difference signal between an input signal from the input node and a feedback signal representing an output signal, and a switched capacitor adder coupled downstream from the switched capacitor input stage and generating a sum signal based upon the input signal with a signal generated by the switched capacitor input stage. The sigma-delta converter may include a switched capacitor output stage amplifying the sum signal and generating an analog amplified signal, a quantization stage coupled in cascade to the switched capacitor output stage and generating the output signal as a digital replica of the analog amplified signal, and a circuit generating the feedback signal as an analog replica of the output signal.

Abstract: Acquiring a satellite signal, by, receiving a CDMA-modulated signal; generating a plurality of CDMA-type test signals comprising a reference test signal having a first chip duration, and a plurality of test signals delayed/anticipated of a corresponding time offset from the respective test reference signal, less than the chip duration; calculating correlations between the CDMA-modulated signal and the plurality of test signals for obtaining a plurality of correlation results; selecting, based on the correlation results, acquisition parameters associated to a candidate satellite signal; acquiring or rejecting the acquisition parameters selected based on the correlation results.

Abstract: A nonvolatile memory device includes a discharge circuit configured to selectively connect circuit nodes to discharge terminals through corresponding discharge paths, and an accumulation device for accumulating electric charge. A driving circuit is for driving the discharge circuit in such a way to connect at least a part of such circuit nodes to the discharge terminals if the value of the external supply voltage falls below a corresponding threshold. A supply circuit is for supplying the driving circuit with an intermediate supply voltage. Each one of the intermediate supply voltages is the corresponding external supply voltage when the value of the external supply voltage is higher than the corresponding threshold, or it is an internal voltage locally generated by the supply circuit by exploiting the electric charge stored by the accumulation device when the value of the external supply voltage is lower than the corresponding threshold.

Abstract: A solar panel may include a first multi-cell thin-film photovoltaic module of a first fabrication type including a transparent support forming a front surface of the panel, a first pair of connection terminals on the transparent support, and first cells of a certain area, being on the transparent support, and being connected in series to the first pair of connection terminals. The solar panel may include a second multi-cell thin-film photovoltaic module of a second fabrication type comprising a support forming a rear surface of the panel, a second pair of connection terminals on the support, and second cells of a certain area, being on the support, and being connected in series to the second pair of connection terminals.

Abstract: A method manufactures a sensor device for sensing a gaseous substance and includes a thin film transistor, which includes a source electrode, a drain electrode and a gate electrode; and an element sensitive to the gaseous substance. In particular, the method includes: forming a first metallic layer on a substrate; defining and patterning the first metallic layer for realizing the gate electrode; depositing a dielectric layer above the gate electrode; depositing a second metallic layer above the layer of dielectric material, defining and patterning the second metallic layer for realizing the source electrode and the drain electrode, and forming the sensitive element by filling a channel region of the thin film transistor with an active layer sensitive to the gaseous substance.