Abstract: Unclonable function circuitry includes a plurality of pairs of phase-change memory cells in a virgin state, and sensing circuitry coupled to the plurality of pairs of phase-change memory cells in the virgin state. The sensing circuitry identifies a subset of the plurality of pairs of phase-change memory cells in the virgin state based on a reliability mask. Signs of differences of effective resistance values of the identified subset of the plurality of pairs of phase-change memory cells in the virgin state are sensed by the sensing circuitry. The sensing circuitry generates a string of bits based on the sensed signs of differences in the effective resistance values of the identified subset of the plurality of pairs of phase-change memory cells in the virgin state. Processing circuitry coupled to the unclonable function circuitry, in operation, executes one or more operations using the generated string of bits.

Abstract: According to one aspect, a system-on-a-chip is proposed which includes a memory storage, a computation circuit, a comparison circuit, and a validation circuit. The memory storage is configured to store an external software module. The computation circuit is configured to compute several modified software modules from the external software module and compute check values by iteration until obtaining a final check value. Each check value is computed at least from a given modified software module and a check value previously computed, starting with a predefined initial check value. The comparison circuit is configured to compare the final check value to an expected value stored in the system-on-a-chip. The validation circuit is configured to validate the external software module when the final check value is equal to the expected value.

Abstract: Disclosed herein is a DC-DC converter, including a high-side power switch coupled between an input voltage and a switched node and a low-side power switch coupled between the switched node and ground. An inductor is coupled between the switched node and an output node. An output capacitor is coupled between the output node and ground. A control circuit is configured to operate the high-side power switch in a constant charge mode of operation to vary on-time of the high-side power switch to maintain a constant amount of charge being transferred to the output capacitor during each charging cycle, independent of variation of the input voltage.

Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.

Abstract: An integrated circuit includes a reconfigurable stream switch and an arithmetic circuit. The stream switch, in operation, streams data. The arithmetic circuit has a plurality of inputs coupled to the reconfigurable stream switch. In operation, the arithmetic circuit generates an output according to AX+BY+C, where A, B and C are vector or scalar constants, and X and Y are data streams streamed to the arithmetic circuit through the reconfigurable stream switch.

Abstract: Techniques to be described herein are based upon the combination of a digital lock-in amplifier approach with a numerical method to yield accurate estimations of the amplitude and phase of a sense signal obtained from a movement sensor associated with a resonant MEMS device such as a MEMS mirror. The techniques described herein are efficient from a computational point of view, in a manner which is suitable for applications in which the implementing hardware is to follow size and power consumption constraints.

Abstract: A method includes coupling an electric motor in a hard disk drive to a set of driver circuits. Each driver circuit includes a high-side switch and a low-side switch. The high-side switch has a high-side current flow path between a supply node coupled to a supply voltage and a switching node coupled to a winding of the electric motor. The low-side switch has a low-side current flow path between the switching node and ground. Respective conduction currents are generated through the low-side current flow paths, in response to a command to reduce the motor speed by coupling a drive voltage to the control terminals of the low-side switches. An intensity of at least one of the respective conduction currents is sensed. In response to the sensed current intensity exceeding a current intensity threshold, the control terminals of the low-side switches are coupled to respective ones of the switching nodes.

Abstract: In a control circuit for a switching stage of an electronic converter, a phase detector generates a drive signal in response to a phase difference between first and second clock signals. The first and second clock signals are generated by first and second current-controlled oscillators, respectively. An operational transconductance amplifier generates first and second control currents in response to a difference between a reference and a feedback of the electronic converter, with the first and second currents applied to control the first and second current-controlled oscillators. In response to a switching clock having a first state, a switching circuit applies first and second bias currents to the control inputs of the first and second current-controlled oscillators, respectively. Conversely, in response to the switching clock having a second state, the switching circuit applies the second and first bias currents to the control inputs of the first and second current-controlled oscillators, respectively.

Abstract: In an embodiment a method includes receiving, at an input of a low-voltage section of a gate driver, a PWM control signal with a switching frequency, providing, at an output of a high-voltage section of the gat driver, a gate-driving signal as a function of the PWM control signal to a power stage, wherein the high-voltage section is galvanically isolated from the low-voltage section, receiving, at a feedback input of the high-voltage section, at least one feedback signal indicative of an operation of the power stage, converting, at an ADC module of the high-voltage section, the feedback signal into a digital data stream, providing, to the ADC module, a conversion-trigger signal designed to determine a start of a conversion for acquiring a new sample of the feedback signal and sending, via an isolation communication channel between the low-voltage section and the high-voltage section, the digital data stream to the low-voltage section.

Abstract: A device includes a driver circuit and diagnostic circuitry coupled to the driver circuit. The diagnostic circuitry includes an on-state diagnostic circuit and an off-state diagnostic circuit. The diagnostic circuitry, in operation: generates a configuration signal associated with an operative condition of the driver circuit based on a comparator output of the off-state diagnostic circuit; diagnoses conditions associated with the driver circuit; and controls operation of the on-state diagnostic circuit based on the configuration signal.

Abstract: A MEMS actuator includes a semiconductor body with a first surface defining a housing cavity facing the first surface and having a bottom surface, the semiconductor body further defining a fluidic channel in the semiconductor body with a first end across the bottom surface. A strainable structure extends into the housing cavity, is coupled to the semiconductor body at the bottom surface, and defines an internal space facing the first end of the fluidic channel and includes at least a first and a second internal subspace connected to each other and to the fluidic channel. When a fluid is pumped through the fluidic channel into the internal space, the first and second internal subspaces expand, thereby straining the strainable structure along the first axis and generating an actuation force exerted by the strainable structure along the first axis, in an opposite direction with respect to the housing cavity.

Abstract: Packaged device having a carrying base; an accommodation cavity in the carrying base; a semiconductor die in the accommodation cavity, the semiconductor die having die pads; a protective layer, covering the semiconductor die and the carrying base; first vias in the protective layer, at the die pads; and connection terminals of conductive material. The connection terminals have first connection portions in the first vias, in electrical contact with the die pads, and second connection portions, extending on the protective layer, along a side surface of the packaged device.

Abstract: Disclosed herein is a DC-DC converter including a power section and a bootstrap circuit for driving the gate of the high-side transistor of the power section. The bootstrap circuit includes an adaptive clamp circuit that maintains a proper voltage differential across the bootstrap capacitor within the bootstrap circuit for recharge during off-times regardless of whether the mode of operation of the DC-DC converter continuous conduction mode (CCM), discontinuous conduction mode (DCM), or pulse-skip mode. This voltage differential is established as being between a bootstrap voltage and a voltage at a tap between the high and low side transistors of the power section. The adaptive clamp circuit maintains the bootstrap voltage as following the lesser of the output voltage and the voltage at the tap.

Abstract: A MEMS device having a body with a first and a second surface, a first portion and a second portion. The MEMS device further has a cavity extending in the body from the second surface; a deformable portion between the first surface and the cavity; and a piezoelectric actuator arranged on the first surface, on the deformable portion. The deformable portion has a first region with a first thickness and a second region with a second thickness greater than the first thickness. The second region is adjacent to the first region and to the first portion of the body.

Abstract: A charge-balance power device includes a semiconductor body having a first conductivity type. A trench gate extends in the semiconductor body from a first surface toward a second surface. A body region has a second conductivity type that is opposite the first conductivity type, and the body region faces the first surface of the semiconductor body and extends on a first side and a second side of the trench gate. Source regions having the first conductivity type extend in the body region and face the first surface of the semiconductor body. A drain terminal extends on the second surface of the semiconductor body. The device further comprises a first and a second columnar region having the second conductivity, which extend in the semiconductor body adjacent to the first and second sides of the trench gate, and the first and second columnar regions are spaced apart from the body region and from the drain terminal.

Abstract: A blocking element is provided for connecting an electronic, micro-mechanical and/or micro-electro-mechanical component, in particular for controlling the propulsion of an electric vehicle. The pin blocking element is formed by a holed body having a first end, a second end and an axial cavity configured for fittingly accommodating a connecting pin. A first flange projects transversely from the holed body at the first end and a second flange projects transversely from the holed body at the second end. The first flange has a greater area than the second flange and is configured to be ultrasonically soldered to a conductive bearing plate to form a power module.

Abstract: A MEMS device is formed by a body of semiconductor material which defines a support structure. A pass-through cavity in the body is surrounded by the support structure. A movable structure is suspended in the pass-through cavity. An elastic structure extends in the pass-through cavity between the support structure and the movable structure. The elastic structure has a first and second portions and is subject, in use, to mechanical stress. The MEMS device is further formed by a metal region, which extends on the first portion of the elastic structure, and by a buried cavity in the elastic structure. The buried cavity extends between the first and the second portions of the elastic structure and communicates laterally with the pass-through cavity.

Abstract: A first circuit is coupled to a second circuit via a communication link. The first circuit generates a first validation signal, a second validation signal, and control signals, and transmits the first and second validation signals to the second circuit via the communication link. The second circuit validates the control signals based on the first and second binary validation signals. The validating includes: verifying that when the first validation signal has a first value, the second validation signal has a second value different from the first value; verifying that when the second validation signal has the first value, the first validation signal has the second value; verifying detection of a transition edge of the first validation signal within a threshold number of clock cycles; and verifying detection of a transition edge of the second validation signal within the threshold number of clock cycles.

Abstract: In an embodiment a method programming floating gate transistors belonging to non-volatile memory cells to multilevel threshold voltages respectively corresponding to the weight factors, performing a sensing operation of the programmed floating gate transistors with a control signal adapted to make the corresponding memory cells become conductive at an instant determined by a respective programmed threshold voltage, performing the convolutional computation by using the input values during an elapsed time for each memory cell to become conductive and outputting output values resulting from the convolutional computation.

Abstract: A method includes receiving electrostatic sensor data in a processor of an electronic device from an electrostatic sensor mounted behind a touchscreen of the electronic device and using the electrostatic sensor data to determine when the touchscreen is being used. Based on whether or not the touchscreen is being used, an on-table detection (OTD) algorithm is selected from a plurality of available OTD algorithms. In one or more examples, the OTD algorithm may also be selected based on the current device mode of the electronic device, which may be determined from a lid angle, a screen angle, and a keyboard angle of the electronic device. The selected OTD algorithm is run to determine whether or not the electronic device is located on a stationary or stable surface.