Abstract: A master device issues memory burst transaction requests via an interconnection bus to fetch data from a slave device. A cipher engine is coupled to the interconnection bus and decrypts the fetched data to produce plaintext data for the master device. The cipher engine selectively operates according to a stream cipher operation mode, or a block cipher operation mode. The cipher engine is configured to stall a read data channel of the interconnection bus between the slave device and the master device in response to the cipher engine switching from the block cipher operation mode to the stream cipher operation mode. The read data channel is reactivated in response to a last beat of a read burst of the plaintext data produced by the cryptographic engine.

Abstract: A current sensor architecture is implemented using a trans-resistance amplifier circuit having a low pass filter characteristic. The current sensing resistor and the input resistors for the amplifier circuit are matched thermally so that they have substantially identical temperature coefficients. The feedback resistors, which are coupled in parallel with corresponding capacitors, are implemented using switched capacitor circuits that emulate resistors. With this configuration, the current sensor is temperature insensitive.

Abstract: The present disclosure is directed to a semiconductor package including a first laser direct structuring (LDS) resin layer and a second LDS resin layer on the first LDS resin layer. Respective surfaces of the first LDS resin layer and the second LDS resin layer are patterned utilizing an LDS process by exposing the respective surfaces to a laser. Patterning the first and second LDS resin layers, respectively, activates additive material present within the first and second LDS resin layers, respectively, converting the additive material from a non-conductive state to a conductive state. The LDS process is followed by a chemical plating step and an electrolytic plating process to form conductive structure coupled to a plurality of die within the first and second LDS resin layers. A molding compound layer is formed on surfaces of the conductive structures and covers the surfaces of the conductive structures.

Abstract: Disclosed herein is a method, including attaching a semiconductor chip to a chip mounting portion on at least one leadframe portion, and attaching a passive component on a passive component mounting portion of the at least one leadframe portion. The method further includes forming a laser direct structuring (LDS) activatable molding material over the semiconductor chip, passive component, and the at least one leadframe portion. Desired patterns of structured areas are formed within the LDS activatable molding material by activating the LDS activatable molding material. The desired patterns of structured areas are metallized to form conductive areas within the LDS activatable molding material to thereby form electrical connection between the semiconductor chip and the passive component. A passivation layer is formed on the LDS activatable molding material.

Abstract: An embodiment method comprises applying domain transformation processing to a time-series of signal samples, received from a sensor coupled to a dynamical system, to produce a dataset of transformed signal samples therefrom, buffering the transformed signal samples, obtaining a data buffer having transformed signal samples as entries, computing statistical parameters of the data buffer, producing a drift signal indicative of the evolution of the dynamical system as a function of the computed statistical parameters, selecting transformed signal samples buffered in the data buffer as a function of the drift signal, applying normalization processing to the buffered transformed signal samples, applying auto-encoder artificial neural network processing to a dataset of resealed signal samples, and producing a dataset of reconstructed signal samples and calculating an error of reconstruction.

Abstract: Disclosed herein is an optical module including a substrate, with an optical detector, laser emitter, and support structure being carried by the substrate. An optical layer includes a fixed portion carried by the support structure, a movable portion affixed between opposite sides of the fixed portion by a spring structure, and a lens system carried by the movable portion. The movable portion has at least one opening defined therein across which the lens system extends, with at least one supporting portion extending across the at least one opening to support the lens system. The optical layer further includes a MEMS actuator for in-plane movement of the movable portion with respect to the fixed portion.

Abstract: A device includes a memory and processing circuitry coupled to the memory. The processing circuitry, in operation: estimates an angular rate of change and determines a rotational versor based on the rotational data; and estimates a gravity vector based on the angular rate of change and the rotational versor. The processing circuitry generates a dynamic gravity vector based on the estimated gravity vector, a correction factor and an estimated error in estimated gravity vector. The processing circuitry estimates a linear acceleration and determines an acceleration versor based on the acceleration data, and determines the correction factor based on the linear acceleration. The processing circuitry estimates the error in the estimated gravity vector based on the acceleration versor.

Abstract: Disclosed herein is a single integrated circuit chip including main logic that operates a vehicle component such as a valve driver. Isolated from the main logic within the chip is a safety area that operates to verify proper operation of the main logic. A checker circuit within the chip outside of the safety area serves to verify proper operation of the checker circuit. The checker circuit receives signals from the safety circuit and uses combinatorial logic circuit to verify from those signals that the check circuit is operating properly.

Abstract: A method for manufacturing a HEMT device includes forming, on a heterostructure, a dielectric layer, forming a through opening through the dielectric layer, and forming a gate electrode in the through opening. Forming the gate electrode includes forming a sacrificial structure, depositing by evaporation a first gate metal layer layer, carrying out a lift-off of the sacrificial structure, depositing a second gate metal layer by sputtering, and depositing a third gate metal layer. The second gate metal layer layer forms a barrier against the diffusion of metal atoms towards the heterostructure.

Abstract: A semiconductor chip is mounted at a first surface of a leadframe and an insulating encapsulation is formed onto the leadframe. An etching mask is applied to a second surface of the leadframe to cover locations of two adjacent rows of electrical contacts as well as a connecting bar between the two adjacent rows which electrically couples the electrical contacts. The second surface is then etched through the etching mask to remove leadframe material at the second surface and define the electrical contacts and connecting bar. The electrical contacts include a distal surface as well as flanks left uncovered by the insulating encapsulation. The etching mask is then removed and the electrical contacts and the connecting bars are used as electrodes in an electroplating of the distal surface and the flanks of the electrical contacts. The connecting bar is then removed from between the two adjacent rows during device singulation.

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

Abstract: A system for testing is provided. The system includes an electronic circuit and an automatic testing equipment (ATE). The electronic circuit includes a voltage monitor including a resistive divider receiving at its voltage input an input voltage and coupled at its output to an input of a comparator. A reference input of the comparator is coupled to a generator supplying a reference voltage setting one or more thresholds of the comparator. The electronic circuit includes a Built In Self Test Module coupled to the ATE and to the inputs and output of the comparator. The BIST module is being configured upon receiving respective commands from the ATE to test a reaction time of the comparator and an offset of the comparator. The ATE performs a respective test of the ratio of the resistor divider by a first voltage measurement and a test of the reference voltage provided by the generator.

Abstract: A method includes retrieving a plurality of datasets from respective memory registers of a memory and storing the retrieved plurality of datasets in respective register portions of a first register. A dataset of data-processing coefficients are stored in a second register. First processing is applied using, as the first operand, a first sub-set of dataset elements stored in the first register, and using, as the second operand, the data-processing coefficients, obtaining a first result. Second processing is applied using, as the first operand, a second sub-set of dataset elements stored in the first register comprised in a second window having a size equal to the dataset size, and using, as the second operand, the replica of the dataset of data-processing coefficients, obtaining a second result. An output is generated based on the first and second results. The first and second processing may perform multiply accumulate (MAC) operations.

Abstract: The present disclosure is directed to a device configured to detect whether the device is in a bag or being taken out of the bag. The device determines whether the device is in a bag or being taken out of the bag based on motion measurements generated by a motion sensor and electrostatic charge measurements generated by an electrostatic charge sensor. By using both distance measurements and motion measurements, the device is able to detect whether the device is in the bag or being taken out of the bag with high efficiency, accuracy, and robustness.

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

Abstract: A random access memory (RAM) includes an array of arranged in rows and columns. The rows of the storage elements correspond to respective memory locations of the RAM. The storage elements of a row have a common gated-clock input and respective data inputs, and each row of the array of storage elements includes a plurality of D type latches. In operation, an address input of the RAM receives a memory address identifying a memory location in the RAM. Clock gating circuitry of the RAM, generates respective gated-clock signals for the rows of the array of storage elements based on the memory address received at the address input. Memory operation are performed using storage elements of the array based on the gated-clock signals.

Abstract: A microfluidic dispensing device has a plurality of chambers arranged in sequence, each having an inlet receiving a liquid to be dispensed and a nozzle for emitting a drop of liquid. An actuator in each chamber receives an actuation quantity and causes a drop of liquid to be emitted by the nozzle of the respective chamber. A drop emission detection element in each chamber generates an actuation command upon detecting the emission of a drop of liquid. A sequential activation electric circuit includes a plurality of sequential activation elements, one for each chamber, each coupled to the drop emission detection element of the respective chamber and to an actuator associated with a subsequent chamber in the sequence of chambers. Each sequential activation element receives the actuation command from the drop emission detection element associated with the respective chamber and activates the actuator associated with the subsequent chamber in the sequence of chambers.

Abstract: The present disclosure relates to a device comprising an inductive element and a first capacitive element series connected between a first node and a second node, a first MOS transistor connected between the first node and a third node configured to receive a reference potential, the second node being coupled directly or via a second MOS transistor to the third node, a second capacitive element connected between a fourth node and an interconnection node between the first capacitive element and the inductive element, a current generator configured to provide an AC current to the fourth node, and a switch connected between the fourth node and the third node.

Abstract: In an embodiment, a USB interface includes a transformer, a primary winding of the transformer, and a first switch in series between a first and a second node, a secondary winding of the transformer and a component in series between a third and a fourth node, the fourth node configured to be set a first reference potential, a second switch connected between the third node and a first terminal, the first terminal configured to provide an output voltage of the USB interface; wherein the component is configured to avoid a current circulation in the secondary winding when the first switch is closed and a control circuit configured to compare a first voltage of an interconnection node between the secondary winding and the component to a first threshold and compare the first voltage to a second threshold when the first voltage is, in absolute values, above the first threshold.

Abstract: A device includes a memory and processing circuitry coupled to the memory. The processing circuitry, in operation, generates an indication of a predicted difference in a direction of arrival (DoA) of a signal using a trained autoregressive model. A predicted indication of a DoA of the signal is generated based on a previous indication of the DoA of the signal and the indication of the predicted difference in the DoA of the signal. The processing circuitry actuates or controls an antenna array based on predicted indications of the DoA of the signal.