Abstract: A lead frame for an integrated electronic device includes a die pad made of a first metallic material. A top coating layer formed by a second metallic material is arranged on a top surface of the die pad. The second metallic material has an oxidation rate lower than the first metallic material. The top coating layer leaves exposed a number of corner portions of the top surface of the die pad. A subsequent heating operation, for example occurring in connection with wirebonding, causes an oxidized layer to form on the corner portions of the top surface of the die pad at a position in contact with the top coating layer.

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

Abstract: Merged-PiN-Schottky, MPS, device comprising: a solid body having a first electrical conductivity; an implanted region extending into the solid body facing a front side of the solid body, having a second electrical conductivity opposite to the first electrical conductivity; and a semiconductor layer extending on the front side, of a material which is a transition metal dichalcogenide, TMD. A first region of the semiconductor layer has the second electrical conductivity and extends in electrical contact with the implanted region, and a second region of the semiconductor layer has the first electrical conductivity and extends adjacent to the first region and in electrical contact with a respective surface portion of the front side having the first electrical conductivity.

Abstract: A scanning laser projector includes an optical module with a housing defined by a top surface, a bottom surface, and sidewalls extending between the top surface and bottom surface to define an interior compartment within the housing. A given one of the sidewalls has an exit window defined therein. A first light detector is positioned at an interior surface of the given one of the sidewalls about a periphery of the exit window. A second light detector positioned at the interior surface of the given one of the sidewalls about the periphery of the exit window and on a different side thereof than the first light detector.

Abstract: Power MOS device, in which a power MOS transistor has a drain terminal that is coupled to a power supply node, a gate terminal that is coupled to a drive node and a source terminal that is coupled to a load node. A detection MOS transistor has a drain terminal that is coupled to a detection node, a gate terminal that is coupled to the drive node and a source terminal that is coupled to the load node. A detection resistor has a first terminal coupled to the power supply node and a second terminal coupled to the detection node.

Abstract: A DC-DC converter includes: an transformer having a primary winding and a secondary winding magnetically coupled to the primary winding; a power oscillator applying an oscillating signal to the primary to transmit a power signal to the secondary winding; a rectifier connected to the secondary winding of the transformer to obtain an output DC voltage by rectification of the power signal; comparison circuitry to generate an error signal representing a difference between the output DC voltage and a reference voltage; a transmitter connected to the secondary winding of the transformer to apply an amplitude modulation to the power signal at the secondary winding of the transformer in response to the error signal to thereby produce an amplitude modulated signal at the primary winding; and a receiver and control circuit connected to the primary winding to control an amplitude of the oscillating signal as a function of the amplitude modulated signal.

Abstract: A voltage supply circuit and a method for controlling a voltage supply circuit are provided. The voltage supply circuit includes a positive charge pump stage that generates a positive voltage and a negative charge pump stage that generates a negative voltage. The voltage supply circuit also includes a control stage that compares a voltage representative of the negative voltage with a reference voltage and causes a slope of the positive voltage to decrease when the voltage representative of the negative voltage exceeds the reference voltage.

Abstract: A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.

Abstract: A leadframe has a die pad area and an outer layer of a first metal having a first oxidation potential. The leadframe is placed in contact with a solution containing a second metal having a second oxidation potential, the second oxidation potential being more negative than the first oxidation potential. Radiation energy is then applied to the die pad area of the leadframe contacted with the solution to cause a local increase in temperature of the leadframe. As a result of the temperature increase, a layer of said second metal is selectively provided at the die pad area of the leadframe by a galvanic displacement reaction. An oxidation of the outer layer of the leadframe is then performed to provide an enhancing layer which counters device package delamination.

Abstract: According to one aspect, a method for determining, for a memory allocation, placements in a memory area of data blocks generated by a neural network, comprises a development of an initial sequence of placements of blocks, each placement being selected from several possible placements, the initial sequence being defined as a candidate sequence, a development of at least one modified sequence of placements from a replacement of a given placement of the initial sequence by a memorized unselected placement, and, if the planned size of the memory area obtained by this modified sequence is less than that of the memory area of the candidate sequence, then this modified sequence becomes the candidate sequence, the placements of the blocks for the allocation being those of the placement sequence defined as a candidate sequence once each modified sequence has been developed.

Abstract: A device include on-board memory, an applications processor, a digital signal processor (DSP) cluster, a configurable accelerator framework (CAF), and at least one communication bus architecture. The communication bus communicatively couples the applications processor, the DSP cluster, and the CAF to the on-board memory. The CAF includes a reconfigurable stream switch and data volume sculpting circuitry, which has an input and an output coupled to the reconfigurable stream switch. The data volume sculpting circuitry receives a series of frames, each frame formed as a two dimensional (2D) data structure, and determines a first dimension and a second dimension of each frame of the series of frames. Based on the first and second dimensions, the data volume sculpting circuitry determines for each frame a position and a size of a region-of-interest to be extracted from the respective frame, and extracts from each frame, data in the frame that is within the region-of-interest.

Abstract: A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.

Abstract: The present disclosure is directed to a detection structure for a vertical-axis resonant accelerometer. The detection structure includes an inertial mass suspended above a substrate and having a window provided therewithin and traversing it throughout a thickness thereof. The inertial mass is coupled to a main anchorage, arranged in the window and integral with the substrate, through a first and a second anchoring elastic element of a torsional type. The detection structure also includes at least a first resonant element having longitudinal extension, coupled between the first elastic element and a first constraint element arranged in the window. The first constraint element is suspended above the substrate, to which it is fixedly coupled through a first auxiliary anchoring element which extends below the first resonant element with longitudinal extension and is integrally coupled between the first constraint element and the main anchorage.

Abstract: A voltage controlled oscillator includes a series resonant circuit having a resonance frequency and an active voltage driving device coupled to the series resonant circuit. The active voltage driving device provides a driving voltage and has an output negative resistance in an operative voltage range at the resonance frequency. The active voltage driving device includes a cross-coupled differential pair having voltage supply terminals providing the driving voltage. The series resonant circuit is coupled between the voltage supply terminals of the cross-coupled differential pair.

Abstract: Techniques and systems are provided for implementing a convolutional neural network. One or more convolution accelerators are provided that each include a feature line buffer memory, a kernel buffer memory, and a plurality of multiply-accumulate (MAC) circuits arranged to multiply and accumulate data. In a first operational mode the convolutional accelerator stores feature data in the feature line buffer memory and stores kernel data in the kernel data buffer memory. In a second mode of operation, the convolutional accelerator stores kernel decompression tables in the feature line buffer memory.

Abstract: A MEMS inertial sensor includes a supporting structure and an inertial structure. The inertial structure includes at least one inertial mass, an elastic structure, and a stopper structure. The elastic structure is mechanically coupled to the inertial mass and to the supporting structure so as to enable a movement of the inertial mass in a direction parallel to a first direction, when the supporting structure is subjected to an acceleration parallel to the first direction. The stopper structure is fixed with respect to the supporting structure and includes at least one primary stopper element and one secondary stopper element. If the acceleration exceeds a first threshold value, the inertial mass abuts against the primary stopper element and subsequently rotates about an axis of rotation defined by the primary stopper element. If the acceleration exceeds a second threshold value, rotation of the inertial mass terminates when the inertial mass abuts against the secondary stopper element.

Abstract: A MEMS switch is actuatable by a fluid, and includes a piezoelectric pressure sensor that detects the movement of a fluid generating a negative pressure. The piezoelectric pressure sensor is formed by a chip of semiconductor material having a through cavity and a sensitive membrane, which extends over the through cavity and has a first and a second surface. The piezoelectric pressure sensor is mounted on a face of a board having a through hole so that the through cavity overlies and is in fluid connection with the through hole. The board has a fixing structure, which enables securing in an opening of a partition wall separating a first and a second space from each other. The board is arranged so that the first surface of the sensitive membrane faces the first space, and the second surface of the sensitive membrane faces the second space.

Abstract: A PWM signal generator circuit includes a multiphase clock generator that generates a number n of phase-shifted clock phases having the same clock period and being phase shifted by a time corresponding to a fraction 1/n of the clock period. The PWM signal generator circuit determines for each switch-on duration first and second integer numbers, and for each switch-off duration third and fourth integer numbers. The first integer number is indicative of the integer number of clock periods of the switch-on duration and the second integer number is indicative of the integer number of the additional fractions 1/n of the clock period of the switch-on duration. The third integer number is indicative of the integer number of clock periods of the switch-off duration, and the fourth integer number is indicative of the integer number of the additional fractions 1/n of the clock period of the switch-off duration.

Abstract: An oscillator includes a tunable resonant circuit having an inductance and a variable capacitance coupled between first and second nodes, and a set of capacitances selectively coupleable between the first and second nodes. An input control node receiving an input control signal is coupled to the variable capacitance and set of capacitances. The tunable resonant circuit is tunable based on the input control signal. A biasing circuit biases the tunable resonant circuit to generate a variable-frequency output signal between the first and second nodes. A voltage divider generates a set of different voltage thresholds, and a set of comparator circuits with hysteresis compares the input control signal to the set of different voltage thresholds to generate a set of control signals. The capacitances in the set of capacitances are selectively coupleable between the first and second nodes as a function of control signals in the set of control signals.

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.