Abstract: A tamper resistant device can be used for an integrated circuit card. The device includes memory storing a first security domain that includes a telecommunication profile and a second security domain that includes an application profile. A first physical interface is configured to be coupled to a baseband processor configured to operate with a mobile telecommunications network. A second physical interface configured to be coupled to an application processor. The first physical interface configured to allow the baseband processor to access the telecommunication profile and the second physical interface is configured to allow the application processor to access the application profile. The tamper resistant device is configured to enable accessibility to the application profile if corresponding commands are received at the first interface and to enable accessibility to the telecommunication profile if corresponding commands are received at the second interface.

Abstract: An embodiment buck converter control circuit comprises an error amplifier configured to generate an error signal based on a feedback signal and a reference signal, a pulse generator circuit configured to generate a pulsed signal having switching cycles set to high and low as a function of the error signal, a driver circuit configured to generate a drive signal for an electronic switch of the buck converter as a function of the pulsed signal, a variable load, connected between two output terminals of the buck converter, configured to absorb a current based on a control signal, and a detector circuit configured to monitor a first signal indicative of an output current provided by the buck converter and a second signal indicative of a negative transient of the output current, and verify whether the second signal indicates a negative transient of the output current.

Abstract: Digital signal processing circuitry, in operation, determines, based on accelerometer data, a carry-position of a device. Double-tap detection parameters are set using the determined carry-position. Double-taps are detected using the set double-tap detection parameters. In response to detection of a double-tap, control signals, such as a flag or an interrupt signal, are generated and used to control operation of the device. For example, a device may enter a wake mode of operation in response to detection of a double-tap.

Abstract: A method performs cryptographic operations on data in a processing device. An iterative operation between a first operand formed by a given number of words and a second operand using a secret key is performed. The iterative operation includes, for each bit of the secret key, applying one of a first set operations and a second set of operations to the first operand and to the second operand depending on of the bit, and conditionally swapping words of the first and the second operand based on a control bit value obtained by applying a logic XOR function to a random bit.

Abstract: A control circuit includes: an output terminal configured to be coupled to a control terminal of a transistor that has a current path coupled to an inductor; a transconductance amplifier configured to produce a sense current based on a current flowing through the current path of the transistor; and a first capacitor, where the control circuit is configured to: turn on the transistor based on a clock signal, integrate the sense current with an integrating capacitor to generate a first voltage, generate a second voltage across the first capacitor based on a first current, generate a second current based on the second voltage, generate a third voltage based on the second current, turn off the transistor when the first voltage becomes higher than the third voltage; discharge the integrating capacitor when the transistor turns off; and regulate an average output current flowing through the inductor based on the first current.

Abstract: A circuit includes a high-side transistor pair and a low-side transistor pair having a common intermediate node. The high-side transistor pair includes a first transistor having a control node and a current flowpath therethrough configured to provide a current flow line between a supply voltage node and the intermediate node, and a second transistor having a current flowpath therethrough coupled to the control node of the first transistor. The low-side transistor pair includes a third transistor having a control node and a current flowpath therethrough configured to provide a current flow line between the intermediate node and the reference voltage node, and a fourth transistor having a current flowpath therethrough coupled to the control node of the third transistor. Testing circuitry is configured to be coupled to at least one of the second transistor and the fourth transistor to apply thereto a test-mode signal.

Abstract: Semiconductor devices are arranged in a chain extending in a longitudinal direction have mutually facing end sides transverse the longitudinal direction and are coupled via tie bars located at the mutually facing end sides. The tie bars are provided with anchoring tips penetrating into an insulating package at mutually facing end sides of the devices. The tie bars can be deformed to extract the anchoring tips from the insulating package at the mutually facing end sides of the devices. Individual singulated devices are thus produced in response to the anchoring tips being extracted from the mutually facing end sides of the devices.

Abstract: A microfluidic group includes a female connector and a male needle connector. The female connector has a connector chamber in a containment body; a duct extending in the containment body to a duct opening on a first face of the connector chamber; a needle entry hole extending from a lateral face of the containment body to a second face, not facing the first face of the connector chamber; and a gasket arranged in the connector chamber. The gasket has a side wall internally delimiting a cavity and extending in part adjacent to the second face of the connector chamber. The cavity of the gasket faces the first face of the connector chamber.

Abstract: Voice command recognition and natural language recognition are carried out using an accelerometer that senses signals from the vibrations of one or more bones of a user and receives no audio input. Since word recognition is made possible using solely the signal from the accelerometer from a person's bone conduction as they speak, an acoustic microphone is not needed and thus not used to collect data for word recognition. According to one embodiment, a housing contains an accelerometer and a processor, both within the same housing. The accelerometer is preferably a MEMS accelerometer which is capable of sensing the vibrations that are present in the bone of a user as the user is speaking words. A machine learning algorithm is applied to the collected data to correctly recognize words spoken by a person with significant difficulties in creating audible language.

Abstract: A circuit comprises first and second input supply nodes configured to receive a supply voltage therebetween. The circuit comprises a high-side driver circuit configured to be coupled to a high-side switch and produce a first signal between first and second high-side output nodes. The circuit comprises a low-side driver circuit configured to be coupled to a low-side switch and produce a second signal between first and second low-side output nodes. The circuit comprises a floating node configured to receive a floating voltage applied between the floating node and the second high-side output node, a bootstrap diode between the first input supply node and an intermediate node, and a current limiter circuit between the intermediate node and the floating node and configured to sense the floating voltage and counter a current flow from the intermediate node to the floating node as a result of the floating voltage reaching a threshold value.

Abstract: A communication system has a galvanic isolation link coupling a first circuit to a second circuit. The first circuit transmits first data signals to the second circuit and receives second data signals from the second circuit in response to the first data signals. The data signals are transmitted in consecutive time slots of a determined time duration via the galvanic isolation link. The first data signals include polling signals transmitted from the first circuit to the second circuit during consecutive time slots, and on-demand access requests transmitted from the first circuit to the second circuit. The second data signals include status response signals transmitted from the second circuit to the first circuit in response to polling signals received from the first circuit, and access response signals transmitted from the second circuit to the first circuit in response to access requests received from the first circuit.

Abstract: In various embodiments, the present disclosure provides capacitors and methods of forming capacitors. In one embodiment, a capacitor includes a substrate, a first electrode on the substrate, a second electrode, and a first dielectric layer. A portion of the first electrode is exposed in a contact region. The first dielectric layer includes a first dielectric region between the first electrode and the second electrode, and a second dielectric region between the first dielectric region and the contact region. The second dielectric region is contiguous to the first dielectric region, and a surface of the second dielectric region defines a surface path between the first electrode and the contact region. The second dielectric region has a plurality of grooves that increase a spatial extension of said surface path.

Abstract: An encapsulation of laser direct structuring (LDS) material is molded onto first and second semiconductor dice. A die-to-die coupling formation between the first and second semiconductor dice includes die vias extending through the LDS material to reach the first and second semiconductor dice and a die-to-die line extending at a surface of the encapsulation between the die vias. After laser activating and structuring selected locations of the surface of the encapsulation for the die vias and die-to-die line, the locations are placed into contact with an electrode that provides an electrically conductive path. Metal material is electrolytically grown onto the locations of the encapsulation by exposure to an electrolyte carrying metal cations. The metal cations are reduced to metal material via a current flowing through the electrically conductive path provided via the electrode. The electrode is then disengaged from contact with the locations having metal material electrolytically grown thereon.

Abstract: The MEMS gyroscope is formed by a substrate, a first mass and a second mass, wherein the first and the second masses are suspended over the substrate and extend, at rest, in a plane of extension defining a first direction and a second direction transverse to the first direction. The MEMS gyroscope further has a drive structure coupled to the first mass and configured, in use, to cause a movement of the first mass in the first direction, and an elastic coupling structure, which extends between the first mass and the second mass and is configured to couple the movement of the first mass in the first direction with a movement of the second mass in the second direction. The elastic coupling structure has a first portion having a first stiffness and a second portion having a second stiffness greater than the first stiffness.

Abstract: A leadframe includes a die pad having arranged thereon a first semiconductor die with an electrically conductive ribbon extending on the first semiconductor die. The first semiconductor die lies intermediate the leadframe and the electrically conductive ribbon. A second semiconductor die is mounted on the electrically conductive ribbon to provide, on the same die pad, a stacked arrangement of the second semiconductor die and the first semiconductor die with the at least one electrically conductive ribbon intermediate the first semiconductor die and the second semiconductor die. Package size reduction can thus be achieved without appreciably affecting the assembly flow of the device.

Abstract: A pre-molded substrate includes a sculptured, electrically conductive laminar structure having spaces therein. The laminar structure includes a die pad having a first die pad surface configured to mount a semiconductor chip. A pre-mold material molded onto the laminar structure penetrates into the spaces and provides a laminar pre-molded substrate with the first die pad surface left exposed. The peripheral edge of the die pad includes an alternation of first and second anchoring formations to the pre-mold material. The first anchoring formations counter first detachment forces inducing displacement of the die pad with respect to the pre-mold material in a first direction from the second die pad surface to the first die pad surface. The second anchoring formations counter second detachment forces inducing displacement of the die pad with respect to the pre-mold material in a second direction from the first die pad surface to the second die pad surface.

Abstract: An apparatus, comprising: a laser light source configured to transmit at least one beam of light pulses towards a target, projecting at least one corresponding beam spot thereon, and an array of sensors with a plurality of sensors distributed according to a grid, a sensor in the array of sensors configured to sense a light pulse incident thereon in response to reflection of at least one light pulse of the beam of light pulses from a field of view, FOV, region in the target, the sensor of the array of sensors further configured to provide a signal indicative of a time of incidence of at least one light pulse. A FOV region of the array of sensors is portioned into grid cells according to the grid. Each sensor in the array of sensors is configured to sense at least one echo light pulse reflected from a respective grid cell portion of the FOV region.

Abstract: A pre-molded leadframe includes a laminar structure having empty spaces therein and a first thickness with a die pad having opposed first and second die pad surfaces. Insulating pre-mold material is molded onto the laminar structure. The pre-mold material penetrates the empty spaces and provides a laminar pre-molded substrate having the first thickness with the first die pad surface left exposed. The die pad has a second thickness that is less than the first thickness. One or more pillar formations are provided protruding from the second die pad surface to a height equal to a difference between the first and second thicknesses. With the laminar structure clamped between surfaces of a mold, the first die pad surface and pillar formations abut against the mold surfaces. The die pad is thus effectively clamped between the clamping surfaces countering undesired flashing of the pre-mold material over the first die pad surface.

Abstract: First and second circuit branches are coupled between an input node and ground. Each circuit branch includes a series coupling first-fourth transistors in a current flow path with an output node. A first capacitor is coupled between a first capacitor node and a second capacitor node intermediate the first transistor and the second transistor in the first circuit branch. A second capacitor is coupled between a third capacitor node and a fourth capacitor node intermediate the first transistor and the second transistor in the second circuit branch. An inter-branch circuit block between the first and second branches includes a first inter-branch transistor coupled between the first capacitor node in the first circuit branch and the fourth capacitor node in the second circuit branch and a second inter-branch transistor coupled between the third capacitor node in the second circuit branch and the second capacitor node in the first circuit branch.

Abstract: An encapsulation of laser direct structuring (LDS) material is molded onto a substrate having first and second semiconductor dice arranged thereon. Laser beam energy is applied to a surface of the encapsulation of LDS material to structure therein die vias extending through the LDS material to the first and second semiconductor dice and a die-to-die line extending at surface of the LDS material between die vias. Laser-induced forward transfer (LIFT) processing is applied to transfer electrically conductive material to the die vias and the die-to-die line extending between die vias. A layer of electrically conductive material electroless grown onto the die vias and the die-to-die line facilitates improved adhesion of the electrically conductive material transferred via LIFT processing.