Abstract: A plastic material substrate has a die mounting location for a semiconductor die. Metallic traces are formed on selected areas of the plastic material substrate, wherein the metallic traces provide electrically-conductive paths for coupling to the semiconductor die. The semiconductor die is attached onto the die mounting location. The semiconductor die attached onto the die mounting location is electrically bonded to selected ones of the metallic traces formed on the plastic material substrate. A package material is molded onto the semiconductor die attached onto the die mounting location.

Abstract: An actuation structure of a MEMS electroacoustic transducer is formed in a die of semiconductor material having a monolithic body with a front surface and a rear surface extending in a horizontal plane x-y plane and defined in which are: a frame; an actuator element arranged in a central opening defined by the frame; cantilever elements, coupled at the front surface between the actuator element and the frame; and piezoelectric regions arranged on the cantilever elements and configured to be biased to cause a deformation of the cantilever elements by the piezoelectric effect. A first stopper arrangement is integrated in the die and configured to interact with the cantilever elements to limit a movement thereof in a first direction of a vertical axis orthogonal to the horizontal plane, x-y plane towards the underlying central opening.

Abstract: A circuit includes an electronic switch configured to be coupled intermediate a high-voltage node and low-voltage circuitry and configured to couple the low-voltage circuitry to the high-voltage node. A voltage-sensing node is configured to be coupled to the high-voltage node via a pull-up resistor. A further electronic switch can be switched to a conductive state to couple the voltage-sensing node and the control node of the electronic switch. A comparator compares a threshold with a voltage at the voltage-sensing node and causes the further electronic switch to switch on in response to the voltage at said voltage-sensing node reaching said threshold. A charge pump coupled to the current flow-path of the electronic switch is activated to the conductive state to pump electric charge from the current flow-path of the electronic switch to the control node of the electronic switch via the further electronic switch switched to the conductive state.

Abstract: A device for generating a control signal based on the linear movement of a linear member is provided. The device includes a linear member, a rotatable member, a first inertial measurement unit (IMU) coupled to the rotatable member and a second IMU having a fixed position. The device also includes a processing circuit which uses sensing signals from the IMUS to determine an attitude of the first IMU referenced to the second IMU and generate a control signal based on the attitude.

Abstract: The accelerometric sensor has a suspended region, mobile with respect to a supporting structure, and a sensing assembly coupled to the suspended region and configured to detect a movement of the suspended region with respect to the supporting structure. The suspended region has a geometry variable between at least two configurations associated with respective centroids, different from each other. The suspended region is formed by a first region rotatably anchored to the supporting structure and by a second region coupled to the first region through elastic connection elements configured to allow a relative movement of the second region with respect to the first region. A driving assembly is coupled to the second region so as to control the relative movement of the latter with respect to the first region.

Abstract: A vertical conduction MOSFET device includes a body of silicon carbide, which has a first type of conductivity and a face. A superficial body region of a second type of conductivity has a first doping level and extends into the body to a first depth , and has a first width. A source region of the first type of conductivity extends into the superficial body region to a second depth, and has a second width. The second depth is smaller than the first depth and the second width is smaller than the first width. A deep body region of the second type of conductivity has a second doping level and extends into the body, at a distance from the face of the body and in direct electrical contact with the superficial body region, and the second doping level is higher than the first doping level.

Abstract: A Junction Barrier Schottky device includes a semiconductor body of SiC having a first conductivity. An implanted region having a second conductivity, extends into the semiconductor body from a top surface of the semiconductor body to form a junction barrier diode with the semiconductor body. An electrical terminal is in ohmic contact with the implanted region and in direct electrical contact with the top surface, laterally to the implanted region, to form a Schottky diode with the semiconductor body. The implanted region is formed by a first and a second portion electrically connected directly to each other and aligned along an alignment axis transverse to the top surface. Orthogonally to the alignment axis, the first portion has a first maximum width and the second portion has a second maximum width greater than the first maximum width.

Abstract: A MEMS piezoelectric device includes a monolithic semiconductor body having first and second main surfaces extending parallel to a horizontal plane formed by first and second horizontal axes. A housing cavity is arranged within the monolithic semiconductor body. A membrane is suspended above the housing cavity at the first main surface. A piezoelectric material layer is arranged above a first surface of the membrane with a proof mass coupled to a second surface, opposite to the first surface, along the vertical axis. An electrode arrangement is provided in contact with the piezoelectric material layer. The proof mass causes deformation of the piezoelectric material layer in response to environmental mechanical vibrations. The proof mass is coupled to the membrane by a connection element arranged, in a central position, between the membrane and the proof mass in the direction of the vertical axis.

Abstract: Various embodiments provide a vertical-conduction semiconductor device that includes: a silicon substrate having a front face and a rear face; a front-side structure arranged on the front face of the substrate, having at least one current-conduction region at the front face; and a back side metal structure, arranged on the rear face of the substrate, in electrical contact with the substrate and constituted by a stack of metal layers. The back side metal structure is formed by: a first metal layer; a silicide region, interposed between the rear face of the substrate and the first metal layer and in electrical contact with the aforesaid rear face; and a second metal layer arranged on the first metal layer.

Abstract: A vertical conduction MOSFET device includes a body of silicon carbide having a first conductivity type and a face. A metallization region extends on the face of the body. A body region of a second conductivity type extends in the body, from the face of the body, along a first direction parallel to the face and along a second direction transverse to the face. A source region of the first conductivity type extends towards the inside of the body region, from the face of the body. The source region has a first portion and a second portion. The first portion has a first doping level and extends in direct electrical contact with the metallization region. The second portion has a second doping level and extends in direct electrical contact with the first portion of the source region. The second doping level is lower than the first doping level.

Abstract: A vertical conduction electronic device is formed by a body of wide-bandgap semiconductor material having a first conductivity type and a surface, which defines a first direction and a second direction. The body has a drift region. The electronic device includes a plurality of superficial implanted regions having a second conductivity type, which extend in the drift region from the surface and delimit between them, in the drift region, at least one superficial portion facing the surface. At least one deep implanted region has the second conductivity type, and extends in the drift region, at a distance from the surface of the body. A metal region extends on the surface of the body, in Schottky contact with the superficial portion of the drift region.

Abstract: A field effect transistor has a semiconductor layer with a top surface extending in a horizontal plane, and an active area defined in which are trench gate regions, which extend in depth with respect to the top surface and have an insulating coating layer and a conductive inner layer, and source regions, adjacent to the trench gate regions so as to form a conductive channel extending vertically. The trench gate regions have a plurality of first gate regions, which extend in length in the form of stripes through the active area along a first direction of the horizontal plane, and moreover a plurality of second gate regions, which extend in length in the form of stripes through the same active area along a second direction of the horizontal plane, orthogonal to, and crossing, the first gate regions. In particular, the first gate regions and second gate regions cross in the active area, joining with a non-zero curvature radius.

Abstract: A first switch couples an input node receiving a main control signal for a main switching stage of a multi-phase converter to an output node delivering a secondary control signal for a secondary switching stage following actuation of the secondary switching stage. A second switch couples the output node to a capacitor during a time period of actuation/deactuation of the secondary switching stage. Current is sourced to the capacitor during the actuation time period or sunk from the capacitor during the deactuation time period. The sourced or sunk current may be generated proportional to the main control signal.

Abstract: A semiconductor chip includes an electrical contact layer covered by a passivation layer. The semiconductor chip is encapsulated in an encapsulation formed by laser-direct-structuring (LDS) material. Laser beam energy is applied to the encapsulation to structure therein a through via passing through the encapsulation and removing the passivation layer at a bonding site of the electrical contact layer of the at least one semiconductor chip. The through via structured in the encapsulation is made electrically conductive so that the electrically-conductive through via is electrically coupled to, optionally in direct contact with, the electrical contact layer at a bonding site where the passivation layer has been removed.

Abstract: An electronic cell includes an integrated stack of structures including, successively: a first electrode; an ovonic threshold switch layer below the first electrode; and a fixed resistor below the ovonic threshold switch layer. A second electrode may be included between fixed resistor and the ovonic threshold switch layer. A memory layer, for example a phase change material layer, a resistive random-access memory layer or a magneto-resistive random-access memory layer, may be included between the first electrode and the ovonic threshold switch layer.

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

Abstract: A packaged electronic system having a support formed by an insulating organic substrate housing a buried conductive region that is floating. A first die is fixed to the support and carries, on a first main surface, a first die contact region capacitively coupled to a first portion of the buried conductive region. A second die is fixed to the support and carries, on a first main surface, a second die contact region capacitively coupled to a second portion of the buried conductive region. A packaging mass encloses the first die, the second die, the first die contact region, the second die contact region, and, at least partially, the support.

Abstract: An interface electronic circuit couplable to a first transducer that generates a first analog signal indicative of a first quantity and to a microcontroller unit, the interface electronic circuit including: a first conversion stage, which generates a first digital signal as a function of the first analog signal; a DSP stage, which includes at least one DSP unit and generates a processed signal as a function of the first digital signal; an advanced-processing stage, which detects, by execution of a processing of the processed signal, the occurrence of an target condition regarding the first quantity; and a number of registers, which store values of configuration parameters. The advanced-processing stage writes at least one subset of the registers, after detecting the occurrence of the target condition, so as to vary the values of the configuration parameters stored in the subset of registers.

Abstract: An antenna-in-package semiconductor device includes a semiconductor chip coupled to a planar substrate. An encapsulation body encapsulates the semiconductor chip. The encapsulation body includes a through cavity extending to the planar substrate. A rectilinear wire antenna is mounted within the through cavity and extends, for instance from the planar substrate, along an axis that is transverse to a surface of the planar substrate to which the semiconductor chip is coupled. The rectilinear wire antenna is electrically coupled to the semiconductor chip. An insulating material fills the cavity to encapsulated the rectilinear wire antenna.

Abstract: Disclosed herein is a method of making a microelectromechanical (MEMS) device. The method includes, in a single structural layer, affixing a tiltable structure to an anchorage portion with first and second supporting arms extending between the anchorage portion and opposite sides of the tiltable structure, and forming first and second resonant piezoelectric actuation structures extending between a constraint portion of the first supporting arm and the anchorage portion, on opposite sides of the first supporting arm. The method further includes coupling a handling wafer underneath the structural layer to define a cavity therebetween, and forming a passivation layer over the structural layer, the passivation layer having contact openings defined therein for routing metal regions for electrical coupling to respective electrical contact pads, the electrical contact pads being electrically connected to the first and second resonant piezoelectric actuation structures.