Abstract: A substrate and a covering structure coupled to the substrate form a chamber. The chamber houses an emitter configured to emit a radiation, a resonant reflector, a detector, and a fixed reflector. First and second windows extend through the covering structure. The emitter, the first reflector and the second reflector are reciprocally arranged such that radiation emitted from the emitter is reflected by the fixed reflector towards the MEMS reflector for further reflection towards the first window to form an output signal. The detector and the second window are reciprocally arranged such that an incoming radiation passing through the second window is received by the detector. The electronic module can be used for a 3D sensing application.

Abstract: A circuit is operated by receiving an input reference signal at an input node, determining a scaling ratio based on the input reference signal, generating a digital input signal as a function of the determined scaling ratio, converting the digital input signal into an analog signal that is a scaled replica of the input reference signal, and providing the analog signal at an output node of the circuit and then, after a duration of time, coupling the input reference signal to the output node.

Abstract: A sensor is driven at a first heating power value. The sensor generates a sensing signal that is indicative of a sensed entity. A possible onset of a sensor contamination condition is detected as a function of the sensing signal generated by the sensor. If such detecting fails to indicate onset of a sensor contamination condition, the sensor continues to be driven at the first heating power value. However, if such detecting indicates onset of a sensor contamination condition, a protection mode is activated. In the protection mode, the sensor is driven at a second heating power value for a protection interval, where the second heating power value is lower than the first heating power value. Furthermore, the operation may refrain from supplying power to the sensor for a further protection interval, wherein the further protection interval is longer than the protection interval.

Abstract: In an embodiment a method includes providing a table including a plurality of data records (R1 . . . Rn) corresponding to a plurality of profile data, providing a master profile including fields to be personalized (F1 . . . Fk . . . Fp) corresponding to one or more of the data records (R1 . . . Rn) to store the different types of personalization values (V1 . . . Vm), combining the one or more of the data records (R1 . . . Rn) in the table with the master profile by inserting the personalization values (V1 . . . Vm) in the fields to be personalized (F1 . . . Fk . . . Fp) to obtain respective personalized profile packages, coding the one or more of the data records (R1 . . . Rn) to obtain encoded data records (CRi), applying the coding to the offset table to obtain encoded data offset (COi) and combining for each record (Ri) the encoded data record (CRi) and the data offset (OCi) in an encoded personalization record (URi).

Abstract: A detection device includes a pressure sensor, which provides a pressure signal indicative of an ambient pressure in an operating environment. An electrostatic-charge-variation sensor provides a charge-variation signal indicative of a variation of electrostatic charge associated with the operating environment, and processing circuitry is coupled to the pressure sensor and to the electrostatic-charge-variation sensor so as to receive the pressure signal and the charge-variation signal, and jointly processes the pressure signal and the charge-variation signal for detecting a variation between a first operating environment and a second operating environment for the detection device. The second operating environment is different from the first operating environment.

Abstract: A process for manufacturing MEMS devices, includes forming a first assembly, which comprises: a dielectric region; a redistribution region; and a plurality of unit portions. Each unit portion of the first assembly includes: a die arranged in the dielectric region; and a plurality of first and second connection elements, which extend to opposite faces of the redistribution region and are connected together by paths that extend in the redistribution region, the first connection elements being coupled to the die. The process further includes: forming a second assembly which comprises a plurality of respective unit portions, each of which includes a semiconductor portion and third connection elements; mechanically coupling the first and second assemblies so as to connect the third connection elements to corresponding second connection elements; and then removing at least part of the semiconductor portion of each unit portion of the second assembly, thus forming corresponding membranes.

Abstract: Noise in a communication channel is estimated by, in the absence of transmitted information packets, obtaining a plurality of sets of signal samples, and estimating noise power levels associated with the sets of signal samples and allotted to respective noise power classes. In the presence of at least one transmitted information packet, an information packet power level is estimated. A set of signal-to-noise ratios computed between the information packet power level and the noise power levels in the respective noise power classes are compared against a signal-to-noise threshold and partitioned into a first subset and a second subset of signal-to-noise ratios failing to exceed/exceeding, respectively, the threshold. One or more resulting impulsive noise parameters are computed as a function of impulsive noise parameters indicative of noise power levels in the signal-to-noise ratios in the first subset while disregarding impulsive noise parameters indicative of noise power levels in the second subset.

Abstract: A driver circuit for a resonant converter includes a comparator that generates a first control signal indicating when a resonant current changes sign. A first ramp generator circuit outputs a first ramp signal, and a comparison circuit determines whether the first ramp signal reaches a reference threshold. The driver circuit drives a half-bridge via drive signals during consecutive first second switching semi-periods, each of which ends when the comparison circuit indicates the first ramp signal has reached a reference threshold. A control circuit generates in each of the first and the second switching semi-periods control signals indicating a first interval and a second interval. A correction circuit modifies the first ramp signal to have a first gradient value during the first interval and a second gradient value during the second interval. Alternatively, the correction circuit modifies a reference threshold by adding a second ramp signal to an initial threshold value.

Abstract: A pulsed signal generator generates a pulsed signal having a pulse width intended to be equal to a given fraction of a pulse width of a reference clock. A reference current source outputs current having a reference magnitude, and a comparison current source outputs current having a magnitude that is a function of the reference magnitude and the given fraction. A comparison circuit compares a total current output by one of the reference current source and the comparison current source during pulses of the reference clock to a total current output by the other of the reference current source and the comparison current source during pulses of the pulsed signal equal in number to the pulses of the reference clock in order to determine whether the pulse width of the pulse signal is less than or equal to the given fraction of the pulse width of the reference clock.

Abstract: First and second n-channel FETs are connected in series between first and second terminals with an intermediate switching node. First and second driver circuits drive gates of the first and second n-channel FETs, respectively, in response to drive signals. The first driver circuit does not implement slew-rate control. A first resistor and capacitor are connected in series between the output of the first driver circuit and an intermediate node. A first electronic switch is connected between the intermediate node and the first terminal. A second electronic switch is connected between the intermediate node and the gate terminal of the first n-channel FET. A second resistor and a third electronic switch are connected in series between the gate terminal of the first n-channel FET and the switching node. A control circuit generates the drive signals and a first, second and third control signal for the first, second and third electronic switch.

Abstract: A time based boost DC-DC converter generates an output voltage using an inductor. A voltage error between the output voltage and a reference voltage is determined and processed in a) an integral control branch which converts the voltage error into an integral control current signal used to control a current controlled oscillator, and b) a proportional branch which converts the voltage error into a proportional control current signal used to control signal a delay line. Current flowing in the inductor is sensed, attenuated and used to apply adjustment to the integral and proportional control current signals. The output from the current controlled oscillator is passed through the delay line and phase detected in order to generate pulse width modulation (PWM) control signaling driving switch operation in the converter.

Abstract: An electronic module for generating light pulses includes an electronic card or interposer, a LASER-diode lighting module, and a LASER-diode driver module. The interposer has an edge recess in which the lighting module is completely inserted. The driver module is arranged on top of the interposer and the lighting module. The electrical connections for driving the LASER diodes are obtained without resorting to wire bonding in order to reduce the parasitic inductances.

Abstract: A three-phase load is powered by a PWM (e.g., SVPWM) driven DC-AC inverter having a single shunt-topology. A shunt voltage and a branch voltage of the inverter (across a transistor to be calibrated) are measured during a second period of each SVPWM sector, and the drain-to-source resistance of the calibrated transistor is calculated. During the fourth period of each SVPWM sector, the branch voltage is measured again, and another branch voltage across another transistor is measured. Using the drain-to-source resistance of the calibrated transistor and the voltage across the calibrated transistor measured during the fourth period, the phase current through the calibrated transistor is calculated. Using the other branch voltage measured during the fourth period and the drain-to-source resistance of its corresponding transistor (known from a prior SVPWM sector), the phase current through that transistor is calculated. From the two calculated phase currents, the other phase current can be calculated.

Abstract: An HEMT includes: a heterostructure; a dielectric layer on the heterostructure; a gate electrode, which extends throughout the thickness of the dielectric layer; a source electrode; and a drain electrode. The dielectric layer extends between the gate electrode and the drain electrode and is absent between the gate electrode and the source electrode. In this way, the distance between the gate electrode and the source electrode can be designed in the absence of constraints due to a field plate that extends towards the source electrode.

Abstract: A non-volatile memory device including an array of memory cells coupled to word lines and a row decoder, which includes a first and a second pull-down stage, which are arranged on opposite sides of the array, and include, respectively, for each word line, a corresponding first pull-down switching circuit and a corresponding second pull-down switching circuit, which are coupled to a first point and a second point, respectively, of the first word line. The row decoder moreover comprises a pull-up stage, which includes, for each word line, a corresponding pull-up switching circuit, which can be electronically controlled in order to: couple the first point to a supply node in the step of deselection of the word line; and decouple the first point from the supply node in the step of selection of the word line.

Abstract: A method of reducing power consumption in portable devices includes providing a sensor producing a sensing signal indicative of sensed entity and powering the sensor. Powering the sensor includes providing a first power value for a first time interval, providing a second power value for a second time interval, the second power value being different from the first power value, and discontinuing powering for a third time interval.

Abstract: Various embodiments provide an apparatus and method for fabricating a wafer, such as a SiC wafer. The apparatus includes a support having a plurality of arms for supporting a substrate. The arms allows for physical contact between the support and the substrate to be minimized. As a result, when the substrate is melted, surface tension between the arms and molten material is reduced, and the molten material will be less likely to cling to the support.

Abstract: A multi-axis MEMS gyroscope includes a micromechanical detection structure having a substrate, a driving-mass arrangement, a driven-mass arrangement with a central window, and a sensing-mass arrangement which undergoes sensing movements in the presence of angular velocities about a first horizontal axis and a second horizontal axis. A sensing-electrode arrangement is fixed with respect to the substrate and is set underneath the sensing-mass arrangement. An anchorage assembly is set within the central window for constraining the driven-mass arrangement to the substrate at anchorage elements. The anchorage assembly includes a rigid structure suspended above the substrate that is elastically coupled to the driven mass by elastic connection elements at a central portion, and is coupled to the anchorage elements by elastic decoupling elements at end portions thereof.

Abstract: A MEMS sensing device for sensing microparticles in an environment external to the MEMS sensing device is provided.

Abstract: A circuit for decoding a pulse width modulated (PWM) signal generates an output signal switching between a first and second logic values as a function of a duty-cycle of the PWM signal. Current generating circuitry receives the PWM signal and injects a current to and sinks a current from an intermediate node as a function of the values of the PWM signal. A capacitor coupled to the intermediate node is alternatively charged and discharged by the injected and sunk currents, respectively, to generate a voltage. A comparator circuit coupled to the intermediate node compares the generated voltage to a comparison voltage and drives the logic values of the output signal as a function of the comparison.