Abstract: A current reference circuit for low supply voltages is provided. The current reference circuit includes a series including a resistor and a diode, a current source having one terminal coupled to a supply voltage and another terminal coupled to the series, an operational amplifier having its negative electrode connected to a band gap reference voltage, and a transistor. The diode has its cathode electrode coupled to ground and its anode electrode coupled to the resistor. The transistor has its gate electrode coupled to the output of the operational amplifier, its source electrode coupled to ground, and its drain electrode coupled to both the positive electrode of the operational amplifier and the current source. Also provided are an integrated circuit that includes at least one current reference circuit for low supply voltages and a signal processing system that includes at least one current reference circuit for low supply voltages.

Abstract: A memory system includes a memory matrix formed on a semiconductor structure. The memory matrix includes a first column line and a second column line which are connected electrically to at least one first memory cell to be read. For the reading of the at least one first cell, a first reading voltage can be supplied to the first column line. The memory matrix also includes a third column line distinct from the first column line and from the second column line. The memory matrix further includes generating circuit for supplying, to the third column line and during the reading of the at least one first memory cell, a biasing voltage which can oppose the establishment of an electric current between the first column line and the third column line in the semiconductor structure. The biasing voltage is preferably substantially equal to the first reading voltage.

Abstract: An analog-to-digital conversion method and device for a multilevel non-volatile memory devicethat includes a multilevel memory cell. The method comprises a first step of converting the most significant bits contained in the memory cell, followed by a second step of converting the least significant bits. The first step is completed within a time interval corresponding to the rise transient of the gate voltage, and the second step is initiated at the end of the transient. Also disclosed is a scheme for error control coding in multilevel Flash memories. The n bits stored in a single memory cell are organized in different “bit-layers”, which are independent from one another. Error correction is carried out separately for each bit-layer. The correction of any failure in a single memory cell is achieved by using a simple error control code providing single-bit correction, regardless of the number of bits stored in a single cell.

Abstract: The column multiplexer is for a memory matrix having memory cells arranged in rows and columns. The multiplexer includes input lines for input signals, a plurality of output lines for electrical connection to the columns of the matrix, a selective connection device for selecting, in a first operation mode, at least one output line of the plurality of output lines in such a way as to connect it selectively to the input lines. In the first operation mode, the selective connection device selects a first group of output lines among the plurality of output lines, including at least three first lines.

Abstract: A clock source selector for selecting either a first clock signal A or a second clock signal B in accordance with a switch request signal includes three retiming circuits each consisting of two clocked flip-flops. The switch request signal is first retimed relative to clock A to give a signal P, is then retimed relative to clock B to give a signal Q, and finally is retimed relative to clock A to give a signal R. Selector circuitry operates such that when signal Q is asserted, the second clock signal B is output, when neither signal P nor signal R, as combined by a NOR gate, are asserted, the first clock signal A is output, and at other times a zero level is output. The clock source selector can be used in an integrated circuit to form a glitch-free multiplexer.

Abstract: A method is provided for testing an integrated circuit in an automatic test environment. According to the method, the automatic test environment is set up, and there is performed a repetitive measurement of at least one electrical quantity representative of an integrated circuit response to a set of prescribed integrated circuit test conditions. The automatic test environment is reset, and the integrated circuit test conditions are changed in synchrony with a synchronization signal having a prescribed periodicity, so that all of the measurements are allotted a time slot of the same length. Also provided is an automatic test equipment apparatus for testing an integrated circuit. The apparatus includes a synchronization generator for supplying a synchronization signal having a prescribed periodicity to means for putting the integrated circuit in a set test condition. The means changes the set test condition in synchrony with the synchronization signal.

Abstract: A bias device includes a first branch and a second branch. The first branch includes a first bipolar device and a corresponding bias circuit. The second branch includes a second bipolar device and a corresponding bias circuit. A self-bias circuit is connected to the first and second branches. A first current generator injects a first auxiliary current into the first bipolar device. A second current generator injects a second current into the second bipolar device that is equal or proportional to the first auxiliary current. The bias device stabilizes the operating point of a circuit.

Abstract: Deep profile and highly doped impurity regions can be formed by diffusing from a solid source or doped silicon glass and using a patterned nitride layer. An oxide etch stop and polysilicon sacrificial layer are left in place in the patterned regions and the dopant is diffused through those layers. The polysilicon provides sacrificial silicon that serves to prevent the formation of boron silicon nitride on the substrate surface and also protects the oxide layer during etching of the silicon glass layer. The oxide layer then acts as an etch stop during removal of the polysilicon layer. In this way, no damage done to the substrate surface during the diffusion or subsequent etch steps and the need for expensive ion implanter steps is avoided.

Abstract: An electric connection structure connecting a first silicon body to conductive regions provided on the surface of a second silicon body arranged on the first body. The electric connection structure includes at least one plug region of silicon, which extends through the second body; at least one insulation region laterally surrounding the plug region; and at least one conductive electromechanical connection region arranged between the first body and the second body, and in electrical contact with the plug region and with conductive regions of the first body. To form the plug region, trenches are dug in a first wafer and are filled, at least partially, with insulating material. The plug region is fixed to a metal region provided on a second wafer, by performing a low-temperature heat treatment which causes a chemical reaction between the metal and the silicon. The first wafer is thinned until the trenches and electrical connections are formed on the free face of the first wafer.

Abstract: An input circuit for memory integrated circuit cards receives a first binary signal transmitted by direct contact between the card and a reader and produces a write control signal that depends on the first binary signal to control a memory. The input circuit includes a control circuit to verify the voltage level of the first binary signal and produce a validation signal, and an inhibition circuit to inhibit the write command when the validation signal is inactive.

Abstract: An x-ray protection circuit for a video processor, to disable a horizontal output pulse when a voltage level on the x-ray input exceeds a reference voltage. The x-ray protection circuit comprises a comparator and a bistable device, and incorporates a reset circuit. The reset circuit enables the initialisation of the protection circuit whilst the power is switched on.

Abstract: A method is provided for manufacturing electronic non-volatile memory devices on a semiconductor substrate including a matrix of memory cells having floating gate regions formed on respective active areas and an oxide layer separating the active areas. The method may include forming sidewalls of the floating gate regions that are slanted with respect to a surface of the semiconductor substrate, forming a trench in the oxide layer following the formation of the floating gate regions, and forming a plug of polycrystalline silicon in the trench. The slanted sidewalls of the floating gate regions provide a leading for the formation of upper layers.

Abstract: An integrated circuit having as power supply voltages a low voltage reference, a logic supply voltage reference and a high voltage reference is provided. The high voltage reference is greater than the low voltage reference and the logic supply voltage reference. The integrated circuit includes an electrically programmable non-volatile memory element, and a selection and programming circuit connected thereto. A voltage control device is connected to a power supply input node of the selection and programming circuit for applying, based upon a programming control signal, the high voltage reference for programming the electrically programmable non-volatile memory element or for applying at least one logic supply voltage reference.

Abstract: A method and device are disclosed for controlling a polyphase motor having a plurality of windings. The device includes a memory device having stored therein data representing a predetermined driving profile, and driver circuit for driving the windings of the polyphase motor based upon the data provided by the memory unit. A feedback control loop is included having an input connected to a selected winding of the polyphase motor and providing an address signal to the memory device that is based upon a current level of the selected winding at around the time the back electromotive force (bemf) signal corresponding thereto crosses a zero reference, for controlling current provided to the windings by the driver circuit so that, for each winding, the current provided thereto is substantially in phase with a back electromotive force (emf) signal corresponding to the winding.

Abstract: A successive-approximation analog-digital converter including a logic control circuit timed by means of an external clock signal clock. The logic control circuit includes a register containing a first digital signal formed of N bits, which is the product of a first analog-digital conversion. The logic control circuit is suitable for producing a second digital signal formed of N bits through a second analog-digital conversion in N clock cycles. This analog-digital converter converts the second digital signal sent by the logic circuit to a second analog signal. A comparator compares the first analog signal with the second analog signal which has been input to the analog-digital converter.

Abstract: A method for designing a new prunable S-random interleaver class to be used as a constituent part of turbo codes. With respect to previously proposed solutions the method has the advantage of being prunable to different block sizes while exhibiting at the same time, for any considered block size, performance comparable with the optimized “ad hoc” S-random interleavers. Another advantage is that, as for every S-random interleaver, the design rules are independent of the constituent codes and of the puncturing rate applied to the turbo code. Therefore, these interleavers potentially can find applications in any turbo code scheme that requires interleaver size flexibility and code rate versatility, thanks to the advantage of requiring a single law storage (i e., one ROM storage instead of several ROMs) from which all the others are obtained by pruning, without compromising the overall error rate performance.

Abstract: Three-dimensional analysis of surface defects and microdefects of an object is performed by correlating two images of the surface of the object based upon a stereoscopic view thereof. Analyzing surface defects may be implemented by integrating, in a single monolithic component made using VLSI CMOS technology, an optical sensor with a cellular neural network. The optical sensor includes a matrix of cells configured as analog processors.

Abstract: A read-only memory formed of cells, each of which includes, between a selection line and a bit line, the series connection of a memory element and of a selection MOS transistor with a gate connected to a read control line. The memory elements of blank cells are P-channel MOS transistors and the memory elements of programmed cells are uniformly N-type doped semiconductor regions.

Abstract: A digital phase comparator circuit that determines and adjusts the relative phase of two digital clock signals derived from the same digital clock. The circuit having two inputs, one connected to receive each of the clock signals to be compared and including a latch circuit to receive one clock signal at the clock input, and the other clock signal at a data input. The latch circuit is arranged so that the output is equal to the signal at the data input when measured at the clock edge. The output is therefore a logic “1” when the second clock leads the first clock, and a logic “0” when the second clock lags the first clock.

Abstract: A method for programming a nonvolatile memory cell envisages applying in succession, to the gate terminal of the memory cell, a first and a second programming pulse trains with pulse amplitude increasing in staircase fashion, in which the amplitude increment between one pulse and the next in the first programming pulse train is greater than the amplitude increment between one pulse and the next in the second programming pulse train. The programming method envisages applying, to the gate terminal of the memory cell and before the first programming pulse train, a third programming pulse train with pulse amplitude increasing in staircase fashion, in which the amplitude increment between one pulse and the next may be less than the amplitude increment in the first programming pulse train and substantially equal to the amplitude increment in the second programming pulse train, or else may be greater than the amplitude increment in the first programming pulse train.