Abstract: Presented is a method of enhancing the rate of removal of a photoresist layer from wafers of semiconductor material after the latter have gone through various process steps to define the patterns of integrated circuits. The method includes heating the wafer and treating it with low-pressure steam in a vacuum environment before starting to remove the photoresist by plasma or wet solutions. This pre-treatment of the photoresists allows the time for removing the photoresist to be reduced substantially and eliminates problems from residue.

Abstract: A current pulse generator with process-independent and temperature-independent symmetric switching times, includes a differential stage which is adapted to generate a transmission current and a circuit for driving the differential stage which is adapted to generate a control voltage for the differential stage. The generator also includes a circuit for compensating the variations in the values of degeneration resistors of the differential stage, to generate, with the differential stage driving circuit, a current for controlling the differential stage, to keep the switching times of the current pulses of the generator substantially unchanged and symmetrical despite variations in the manufacturing process of the generator and the temperature.

Abstract: The structure allows checking an integrated electronic device comprising an oxide layer to be measured located above a doped pocket of a wafer of doped semiconductor material and arranged adjacent to a gate region of polycrystalline semiconductor material. The structure is formed at a suitable point of the wafer and comprises an oxide test region of the same material, having the same thickness and the same electrical characteristics as the oxide layer to be measured and a polycrystalline region of the same material, having the same thickness and the same electrical characteristics as the gate region. The polycrystalline region extends preferably along the perimeter of a square and delimits laterally the oxide test region, the area of which is greater than the area of the oxide layer to be measured so as to allow non-destructive testing, on-line, of the oxide layer to be measured during an early stage of the manufacturing process.

Abstract: Circuit for erasing and rewriting blocks of memory cells and particularly of analog flash cells, including at least one row decoding circuit including at least two adder blocks, suitable to generate a row address signal, at least two decoder blocks, suitable to generate respective pluralities of signals identifying a respective sector of memory to be enabled, at least two shifter blocks, suitable to generate an address signal of another row to be enabled, at least two OR logic blocks, suitable to generate respective signals serving the purpose to simultaneously enable at least two rows of the memory matrix.

Abstract: A SRAM including an array of memory cell lines and columns, each column being supplied between a high supply voltage and a low supply voltage, which includes at least one MOS transistor in series with each column, and circuitry for applying to the at least one MOS transistor a turn-off control signal to enter a stand-by mode, whereby the overall resistance of the column and of the at least one transistor increases in stand-by mode.

Abstract: A semiconductor package having an encapsulation that encapsulates an integrated circuit chip and an external lead frame for the chip. Multiple connection leads project from the periphery of the encapsulation. At least one external face of the encapsulation is covered with a layer of electrically conductive material, and the conducting material layer has at least one lateral extension that electrically contacts at least one of the projecting connection leads. A method of manufacturing such a semiconductor package is also provided.

Abstract: An address binary counter for an interleaved having an array of memory cells being divided into a first bank of memory cells and a second bank of memory cells includes as many stages as the bits that may be stored in the memory cells of a row of one of the banks, and a carry calculation network. The interleaved memory operates in a burst access mode enabled by an enabling signal. The carry calculation network includes an ordered group of independent carry generators. Each independent carry generator includes a certain number of stages, with each stage having inputs receiving its own enabling bit and a number of consecutive bits of a row of the bank equal to the number of stages, orderly starting from the least significant bit. The enabling bit of the first carry generator of the ordered group is the enabling signal, and the enabling bit of any other carry generator of the ordered group is the logic AND of the enabling signal and of the input bits of the preceding carry generator of the ordered group.

Abstract: A FLASH memory is organized in a plurality of physical sectors which may be split into a plurality of singularly addressable logic sectors. Each logic sector may include a memory space of a predetermined size and a chain pointer assuming a neutral value or a value pointing to a second logic sector associated with a respective chain pointer at the neutral value. Each logic sector may also include a status indicator assuming at least one of a first value if the logic sector is empty, a second value if the data therein belongs to the logic sector, a third value if the data does not belong to the logic sector, and a fourth value if the data has been erased. Further, each logic sector may include a remap pointer assuming the neutral value or a value pointing directly or indirectly to the chain pointer of a third logic sector.

Abstract: A pre-charging circuit for the output node of an output buffer of an integrated digital system generates a first pulse for enabling the output of new data and a second pulse having a shorter duration than the first pulse for loading the new data in an output data register. The output data register is coupled to the input of the output buffer. A capacitor is connected in parallel to the load capacitance of the output node of the buffer by a pass-gate. The pass-gate is enabled by a pre-charge command corresponding to the logic AND of the second pulse and of the logic XOR of the new data and the data currently present on the output node. A driver is disabled by the first pulse for charging the capacitor to a voltage corresponding to the logic level of data belonging to the group that includes the new data and a logic inversion of the current data.

Abstract: An interleaved memory is readable in a sequential access synchronous mode and in a random access asynchronous mode based upon externally generated command signals including an address latch enabling signal and a chip enable signal. The memory includes a circuit for regenerating the externally generated address latch enabling signal. A first and a second internal replica signal are generated by the circuit. The second internal replica signal has a leading edge that is delayed with respect to a leading edge of the first internal replica signal. A duration of the second internal replica signal is conditionally incremented to prevent non-synchronization between the externally generated address latch enabling signal and the externally generated chip enable signal when the interleaved memory is operating in the sequential access synchronous mode or in the random access asynchronous mode.

Abstract: A self-disabling and self-recovering converter includes a transformer connected to a power source and has an auxiliary winding for providing a self-supply voltage after start-up, and an integrated circuit having circuitry and a plurality of pins connected thereto. The converter also includes at least one external line and a sensor connected thereto for an electrical or physical quantity to be monitored. The at least one external line is biased through a first pin with the self-supply voltage, and is functionally coupled to a second pin when a threshold is surpassed. A sectionable voltage clamp chain is connected between the auxiliary winding and a voltage reference. A self-recovery circuit having a first input is connected to the auxiliary winding and a second input is connected through the second pin to the at least one external line.

Abstract: A finite impulse response (FIR) filter for implementing a Hilbert transform is provided. The FIR filter includes a plurality of programmable delay cells connected in cascade between an input terminal of the FIR filter and an output terminal of the FIR filter. Each programmable delay cell has associated therewith a constant filter coefficient and a programmable delay coefficient. The FIR filter is also applicable for processing signals originated by the reading of data from a magnetic storage media which employs perpendicular recording.

Abstract: An integrated circuit structure and method provides a burn-in stress test mode that facilitates stress testing of an integrated circuit device in a burn-in oven. The integrated circuit structure and method is capable of disabling a time-out feature of an IC memory device during a stress test mode of the device in order to facilitate stress testing of the device in a burn-in oven. The integrated circuit structure provides for entry into the burn-in stress test mode when a supply voltage supplied to the integrated circuit device exceeds a predetermined voltage level and/or the temperature of the integrated circuit device exceeds a predetermined temperature level.

Abstract: A method for addressing redundant columns in a nonvolatile memory, which receives, at inputs, selection addresses and comprises a plurality of redundant columns, each including a respective bit line and a plurality of memory cells connected to the bit line. The addressing method comprises the steps of: detecting a transition in the selection addresses; starting charging of all the bit lines upon detection of the transition in the addresses; then detecting whether one of the redundant columns is addressed; should one of the redundant columns be found to be addressed, proceeding with charging of the bit line of the redundant column addressed and interrupting charging of the bit lines of the redundant columns not addressed; and should none of the redundant columns be found to be addressed, interrupting charging of all the bit lines.

Abstract: A method is for decoding three logic signals produced by three Hall effect sensors installed in an electronically-switched three-phase brushless motor according to a sequence of six driving phases to be switched synchronously with a rotor position. The method includes determining a real phasing of the three Hall effect sensors at 60, 120, 300 or 240 electrical degrees. The determining is accomplished by decoding a whole set of eight possible combinations of the three logic signals produced by the three Hall effect sensors. The real phasing of the three Hall effect sensors is discriminated based upon two dissimilar combinations from among six valid combinations, the six valid combinations from among the eight possible combinations. The method further includes determining the rotor position based upon the real phasing of the three Hall effect sensors and generating logic driving signals synchronous with the rotor position.

Abstract: A first order phase-locked loop includes a tuning circuit which allows phase lock to be quickly reached, and to be maintained during transient situations such as loss of the data signal. Such an improved circuit has a tuning circuit for the voltage controlled oscillator which utilizes two capacitors. Two signals are used to drive a first, larger, capacitor, and have the same duty cycle when the capacitor voltage is proper and the voltage controlled oscillator is operating at the correct frequency. A second, smaller, capacitor is used to quickly achieve phase lock with the incoming data signal. The use of two oppositional signals to drive the capacitors allows them to more quickly be charged or discharged to the proper voltage level to obtain both frequency and phase lock with the incoming data signal. Thus, the circuit is able to quickly acquire lock during power-up, or reacquire lock under circumstances where the operating condition of the circuit changes suddenly.

Abstract: The definition of conversion of a digital value in a PWM signal using an N-bit up/down counter is improved by increasing the dimension of the input data to N+2 bits. This is done using the two Lsb's of the N+2 input data for selecting one among three intermediate levels between two consecutive values of an N-bit dynamic, according to a predefined table of combinations. The converter may still use an N-bit comparator. The system is particularly useful in driving a multi-phase brushless DC motor with each phase-winding singularly driven through a full-bridge output stage.

Abstract: Presented is a DC/DC converting circuit adapted to convert a DC input voltage to a DC output voltage. The converting circuit uses, as its synchronous rectifier member, a PMOS bipolar power transistor of the PMOS type, and allows it to be turned on by a control logic circuit capable of quickly sensing automatically the difference in electric potential between a conduction terminal and the body terminal of the transistor.

Abstract: During critical plasma etching steps, the wafer's surface is illuminated with electromagnetic radiation in the visible and/or in the UV spectrum having an energy and power density sufficient to increase the reverse current through protective junctions on the wafer. These protective junctions provide electrical discharge paths for electrical charges picked up by exposed conductive parts of the wafer. The induced voltages are limited to values compatible with preserving the integrity of functional dielectric layers coupled to the exposed conductive parts and to the semiconductor substrate or to another conductive part.

Abstract: Complementary LDMOS and MOS structures and vertical PNP transistors capable of withstanding a relatively high voltage may be realized in a mixed-technology integrated circuit of the so-called “smart power” type, by forming a phosphorus doped n-region of a similar diffusion profile, respectively in: The drain zone of the n-channel LDMOS transistors, in the body zone of the p-channel LDMOS transistors forming first CMOS structures; in the drain zone of n-channel MOS transistors belonging to second CMOS structures and in a base region near the emitter region of isolated collector, vertical PNP transistors, thus simultaneously achieving the result of increasing the voltage withstanding ability of all these monolithically integrated structures.