Abstract: Presented is a process for manufacturing virtual ground electronic memory devices integrated in a semiconductor having a conductivity of a first type and having at least one matrix of floating gate memory cells. In the matrix there are a number of continuous bit lines extending across the substrate as discrete parallel strips, and a number of word lines extending in a transverse direction to the bit lines. The method begins by forming gate regions of the memory cells to produce a number of continuous strips seperated by parallel openings. Then, a dopant is implanted to form, within the parallel openings, the bit lines with conductivity of a second type. Spacers are formed on sidewalls of the gate regions. Then a first layer of a transition metal is deposited into said parallel openings, and the transition metal layer is subjected to a thermal treatment for reacting it with semiconductor substract and forming a silicide layer over the bit lines.

Abstract: The analog processor of this invention is programmable and capable of storing the processing coefficients in analog form. It comprises a storage section having at least one output, plural outputs in most cases, and being adapted to respectively generate programming signals on such outputs; the storage section is input a plurality of supply voltage signals and is operative to produce, in connection with information stored therein, one of the supply voltage signals on each of the outputs, it being understood that one voltage signal may be produced on several such outputs. Advantageously, the processor can also be programmed in a simple manner from circuits of the digital type if switches controlled by storage elements are used in the storage section.

Abstract: A signature generator circuit is provided for generating a signature word relating to a plurality of words. The signature generator circuit includes a logic gate that receives the plurality of words in series at one input, and a shift register that has a data input, a clock input, and a register output. The clock input receives a clock signal that sets the rate of the plurality of words, the data input is coupled to the output of the logic gate, and the register output is coupled to another input of the logic gate. In a preferred embodiment, the shift register also has a parallel output for outputting the contents of the shift register. Also provided is a method for generating a signature relating to a plurality of words using a logic gate and a shift register. The contents of the shift register are reset. One of the words is supplied in series to the logic gate, at least one of the bits in the shift register is also supplied to the logic gate, and the output of the logic gate is stored in the shift register.

Abstract: A method for testing memory cells, and in particular virgin memory cells, in a multilevel memory device having a plurality of memory cells.

Abstract: The cells of the stacked type each comprise a MOS transistor formed in an active region of a substrate of semiconductor material and a capacitor formed above the active region; each MOS transistor has a first and a second conductive region and a control electrode and each capacitor has a first and a second plate separated by a dielectric region material, for example, ferroelectric one. The first conductive region of each MOS transistor is connected to the first plate of a respective capacitor, the second conductive region of each MOS transistor is connected to a respective bit line, the control electrode of each MOS transistor is connected to a respective word line, the second plate of each capacitor is connected to a respective plate line. The plate lines run perpendicular to the bit line and parallel to the word lines. At least two cells adjacent in a parallel direction to the bit lines share the same dielectric region material.

Abstract: A non-volatile memory device is organized with memory cells that are arranged by row and by column. The memory device includes a sector of matrix cells, row decoders and column decoders suitable to decode address signals and to activate respectively the rows or said columns, at least a sector of redundancy cells such that it is possible to substitute a row of the sector of matrix cells with a row of the sector of redundancy cells. The non-volatile memory device comprises a local column decoder for the matrix sector and a local column decoder for the redundancy sector. The local column decoders are controlled by external signals so that the row of the redundancy sector is activated simultaneously with the row of the matrix sector.

Abstract: A redundancy architecture for a memory includes an array of memory cells divided into at least a pair of semi-arrays that are singularly addressable. Each semi-array is organized into rows and columns. The redundancy architecture includes a number of packets each including redundancy columns. The packets are divided into two subsets of packets. Each packet is addressable independently from the other by respective address circuits. Each packet also provides redundancy columns exclusively for a respective semi-array.

Abstract: An operational amplifier includes a first stage, and a second stage with an input connected to an output of the first stage and an output connected to a load. The second stage includes between its input and its output a first signal path for driving the load in a first direction, and a second signal path for driving the load in the opposite direction. The first and second signal paths have substantially equal gains for small signals, substantially equal output impedances for small and large signals, and substantially equal output-current capabilities.

Abstract: The present invention relates to a method of manufacturing an electrically programmable memory cell with a lateral floating gate with respect to the control gate, including the steps of forming an insulated control gate on an active area; forming a thin insulating layer around the control gate; successively depositing a thin layer of a conductive material and a layer of an insulating material; anisotropically etching the insulating material to form spacers of this material; and removing the portions of the thin conductive layer which are not coated with the spacers.

Abstract: A memory device with a test mode control circuit for entering a test mode responsive to a high on the Vss pin or a low on the Vcc pin that supply power to the output pins during normal operation of the memory device. In test mode the wordlines and bitlines of the memory remain active from the time they are activated, typically when the clock switched from a first to a second logic state, until the clock switches back to the first logic state.

Abstract: A method is provided for forming an improved contact opening of a semiconductor integrated circuit, and an integrated circuit formed according to the same. Planarization of the semiconductor structure is maximized and misalignment of contact openings is tolerated by first forming a conductive structure over a portion of a first body. A thin dielectric layer is formed at least partially over the conductive structure. A thick film, having a high etch selectivity to the thin dielectric layer, is formed over the dielectric layer. The thick film is patterned and etched to form a stack substantially over the conductive structure. An insulation layer is formed over the thin dielectric layer and the stack wherein the stack has a relatively high etch selectivity to the insulation layer. The insulation layer is etched back to expose an upper surface of the stack.

Abstract: A transistor including an epitaxial layer with a first conductivity type, a base buried region with a second conductivity type, and a sinker base region with the second conductivity type which extends from a main surface of the transistor to the base buried region, and delimits, together with the base buried region, emitter fingers in the epitaxial layer. The transistor further includes an emitter buried region with the first conductivity type and a doping level which is higher than that of the epitaxial layer. The emitter buried region is embedded in the epitaxial layer in a position adjacent to the base buried region. A sinker emitter region having the first conductivity type and a doping level which is higher than that of the epitaxial layer and extends from the main surface to the emitter buried region inside the emitter fingers.

Abstract: A circuit for use in a system comprising a plurality of modules connected to an interconnect, said modules being arranged to put information onto said interconnect, said circuit comprising circuitry for determining if information on the interconnect satisfies one or more conditions; and circuitry for storing at least part of the information which satisfies the one or more conditions.

Abstract: A write head is described having a switchable damping resistance coupled in parallel with an inductor. The damping resistance is decoupled from the inductor by rendering a transistor nonconductive when a direction of current in the inductor changes. The damping resistance is then coupled to the inductor before oscillations begin in the current in the inductor. The decoupling of the damping resistor eliminates power dissipation in the damping resistor during a change in the direction of current in the inductor.

Abstract: A circuit for regulating the gain of a variable differential gain amplifier. In one embodiment, a fully differential amplifier amplifies the outputs of the variable gain amplifier. The outputs of the fully differential amplifier are applied to a three input comparator so that if either of the outputs are greater than a reference voltage, a control signal is generated which is used to regulate the gain of the variable gain amplifier. In other embodiments, an analog OR function is used as an input to a conventional two input comparator in place of the three input comparator. In another embodiment, outputs of the variable gain amplifier are passed through switches to a scaling circuit which either voltage divides or amplifies and combines the outputs before application to a comparator. In each case, known asymmetries can be compensated for by independent gain control of each of the outputs of the variable gain differential amplifier.

Abstract: An active precision termination of the type incorporated in a voltage regulator for feeding the lines of an external bus is presented. Each termination includes a matching impedance connected in series to a switch formed by a MOS transistor, including a cell formed by a plurality of circuit branches provided in parallel and coupled to a unique output terminal. Each branch includes an input coupled to the series of the impedance and of the switch and receiving a control voltage signal. The body terminal of each MOS transistor receives a corresponding control signal via an inverter, whereas the control terminal of each MOS transistor receives a corresponding control voltage signal.

Abstract: The high speed multiplier takes advantage of results from previous calculations by recognizing that in many cases the multiplicand between a first and second multiplication differs only slightly. Thus, the present system divides the multiplicand into a cache lookup bit (CLB) and a table lookup bit (TLB). The results of a first multiplication are stored in a cache. The CLB of a of the multiplicand in the second multiplication is then compared to the CLB of the multiplicand in the second multiplication. If the CLB matches, the product of the first multiplication is retrieved. The product of the TLB of the multiplicand and the multiplier is then retrieved from a lookup table and either added or subtracted from the retrieved product.

Abstract: A circuit for minimizing the current spikes in through the stator coils in a brushless dc motor is disclosed. The circuit includes a voltage amplifier for receiving an input signal voltage and a feedback voltage, a compensation circuit for compensating the output of the voltage amplifier, a second voltage amplifier for amplifying the compensated output, a switch for selectively connecting compensated output to the stator coils, and a conductive path for discharging the compensation circuit when the switch is not conducting. The conductive path can be a transistor or a transistor in series with a voltage reference device. The invention reduces the commutation noise and the dynamic power requirement in a brushless direct current motor.

Abstract: A method is provided for secured transfer of data from a first memory containing the data element to a second memory through a data bus that is connected between the first memory and the second memory. According to the method, a secret N-byte data element is transferred byte-by-byte through the data bus, with each byte transiting at least once on the data bus. Before each transfer of a byte of the secret data element, a current index ranging from 0 to N−1 is randomly chosen, with the current index corresponding to a place value of the byte to be transferred. At each transfer of a byte of the secret data element with a place value equal to the current index, a corresponding bit of an N-byte loading indicator is modified as a function of a loading mode, with the loading mode being an integer ranging from 0 to a first constant. The transfer of the secret data element is ended when the loading indicator takes a predetermined value.

Abstract: A robust communication system for transmitting through a noisy environment includes a signal source for providing discrete signals, a chaotic modulator for modulating the discrete signals, and an incoherent discriminator or receiver for receiving the modulated signals. The incoherent discriminator includes a high-pass filter for removing the lowest frequency harmonics of the received signals, a rectifier for providing an absolute value of the received signals, a low-pass filter and a comparator after the low-pass filter.