Abstract: A sensor includes pixels supported by a substrate doped with a first conductivity type. Each pixel includes a portion of the substrate delimited by a vertical insulation structure with an image sensing assembly and a depth sensing assembly. The image sensing assembly includes a first region of the substrate more heavily doped with the first conductivity type and a first vertical transfer gate completely laterally surrounding the first region. Each of the depth sensing assemblies includes a second region of the substrate more heavily doped with the first conductivity type a second vertical transfer gate opposite a corresponding portion of the first vertical transfer gate. The second region is arranged between the second vertical transfer gate and the corresponding portion of the first vertical transfer gate.

Abstract: A memory cell comprising a stack of a conductive via, of a layer made of a phase-change material, and of a first electrode, the memory cell being covered with an encapsulation layer made of a silicon nitride having a density or volumic mass smaller than 2.2 g/cm3. A method of manufacturing a memory cell and a system having an integrated memory circuit that includes a plurality of memory cells is also provided.

Abstract: An insulating encapsulation encapsulates a semiconductor die having an integrated Hall current sensor configured to measure an electric current flowing adjacent an active surface of the semiconductor die. An electrically conductive trace is embedded in the insulating encapsulation. First electrically conductive formations extend through the insulating encapsulation towards opposed ends of the electrically conductive trace. The first electrically conductive formations are configured to cause an electrical current subject to measurement to flow in a current flow path through the electrically conductive trace. Second electrically conductive formations extend through the insulating encapsulation towards the active surface of the semiconductor die. The second electrically conductive formations are configured to activate the Hall current sensor integrated in the semiconductor die.

Abstract: The present disclosure relates to an avalanche photodiode pixel including: a transistor adapted to be controlled by an enable signal having a first state for controlling the enabling of the pixel and a second state for controlling the disabling of the pixel, the transistor being configured to couple an avalanche photodiode of the pixel to a node of application of a substrate voltage when the enable signal is in the first state; and an output circuit adapted to be controlled by the enable signal and configured to provide a pixel output signal when the enable signal is in the first state and to block the pixel output signal when the enable signal is in the second state.

Abstract: A converter circuit is configured to convert a DC voltage into an AC voltage using a first thyristor and second thyristor in series in a first branch, a third thyristor and fourth thyristor in series in a second branch in an antiparallel configuration to the first branch, and a first transistor and second transistor in series in a third branch. When the AC voltage is equal to zero, and when the first thyristor is conductive and the first and second transistors are non-conductive, a first positive current is applied to the gate of the antiparallel third thyristor to control turn on and ensure that the current circulating in the first thyristor falls below the holding current.

Abstract: Microelectromechanical device comprising a supporting body, containing semiconductor material and a movable mass, constrained to the supporting body with a relative degree of freedom with respect to at least one motion direction, within a range of admissible positions. The device also comprises stopper elements, operable by the movable mass due to movements along the at least one motion direction and configured to apply stop forces to opposite sides of the movable mass, transversely to the at least one motion direction, when the movable mass reaches a respective endpoint of the range of admissible positions, so as to prevent the movable mass from exceeding the respective endpoint.

Abstract: The present disclosure is directed to a device and method for accurately estimating a write self-time of a memory array. The write self-time is estimated by performing a simulated write operation on a write self-time bit cell having the same structure and arrangement as each of the bit cells of the memory array. The write operations on the bit cells of the memory array are stopped in response to detecting completion of the simulated write operation.

Abstract: An electronic device includes a memory and includes a plurality of word lines selectively driven by a decoder, with each pair of adjacent word lines having an underdrive circuit coupled therebetween. That underdrive circuit includes first and second transistors source/drain coupled in series with one another between the pair of adjacent word lines, the first and second transistors being replicas of a pull-down transistor and a pass gate transistor of bitcells the memory. One of the first and second transistors has its gate driven by a supply voltage and the other of the first and second transistor has its gate driven by a first read assist control signal.

Abstract: A neural network includes an internal storage unit. The internal storage unit stores feature data received from a memory external to the neural network. The internal storage unit reads the feature data to a hardware accelerator of the neural network. The internal storage unit adapts a storage pattern of the feature data and a read pattern of the feature data to enhance the efficiency of the hardware accelerator.

Abstract: A neural network is able to reconfigure hardware accelerators on-the-fly without stopping downstream hardware accelerators. The neural network inserts a reconfiguration tag into the stream of feature data. If the reconfiguration tag matches an identification of a hardware accelerator, a reconfiguration process is initiated. Upstream hardware accelerators are paused while downstream hardware accelerators continue to operate. An epoch controller reconfigures the hardware accelerator via a bus. Normal operation of the neural network then resumes.

Abstract: A hybrid QFN package includes an encapsulant body that encapsulates a lead frame and integrated circuit (IC) device where the lead frame includes a die pad and vertically offset leads. Back sides of the die pad and encapsulant body are coplanar at first surface. Front sides of the leads, the IC device and the encapsulant body are substantially coplanar at a second surface. An insulating layer covers the second surface except at a portion of the leads located at the peripheral edge of the encapsulating body. Vias extend through the insulating layer to the leads and IC device. Wiring lines on the insulating layer interconnect the vias. A passivation layer covers the wiring lines and vias.

Abstract: Integrated electronic device including: a semiconductor body of silicon delimited by a front surface and including at least a first semiconductive region of a first conductivity type, which extends into the semiconductor body starting from the front surface, and a second semiconductive region of a second conductivity type, which extends below the first semiconductive region; a dielectric capping region; a trench which extends through the dielectric capping region and through a front portion of the semiconductor body, in such a way that a part of the first semiconductive region laterally faces the trench, said trench partly extending inside the second semiconductive region; a conductive contact structure extending into the trench and including: a coating region of titanium silicide, which coats the bottom of the trench, in contact with the second semiconductive region, and also laterally coats the part of the first semiconductive region laterally facing the trench; and an inner conductive region.

Abstract: A bipolar transistor includes a first PN junction and a second PN junction. A first gate is located on the first PN junction. A second gate is located on the second PN junction.

Abstract: An integrated circuit optical package includes a support substrate having a mounting face and an electrical interconnection network between the mounting face and contact pads located on a lower face of the support substrate. A cap includes a lateral wall fastened on the mounting face and an upper wall including a first opening. A first optical element is fastened on the upper wall of the cap to seal the first opening. An electromagnetic shielding element is embedded in the cap and configured to be coupled to a reference supply point via the interconnection network and at least one contact pad. A first electronic chip is mounted on the mounting face and in optical cooperation with the first optical element.

Abstract: A neural network includes an internal storage unit. The internal storage unit stores feature data received from a memory external to the neural network. The internal storage unit reads the feature data to a hardware accelerator of the neural network. The internal storage unit adapts a storage pattern of the feature data and a read pattern of the feature data to enhance the efficiency of the hardware accelerator.

Abstract: A convolutional accelerator framework (CAF) has a plurality of processing circuits including one or more convolution accelerators, a reconfigurable hardware buffer configurable to store data of a variable number of input data channels, and a stream switch coupled to the plurality of processing circuits. The reconfigurable hardware buffer has a memory and control circuitry. A number of the variable number of input data channels is associated with an execution epoch. The stream switch streams data of the variable number of input data channels between processing circuits of the plurality of processing circuits and the reconfigurable hardware buffer during processing of the execution epoch. The control circuitry of the reconfigurable hardware buffer configures the memory to store data of the variable number of input data channels, the configuring including allocating a portion of the memory to each of the variable number of input data channels.

Abstract: Incorporation of metallic quantum dots (e.g., silver bromide (AgBr) films) into the source and drain regions of a MOSFET can assist in controlling the transistor performance by tuning the threshold voltage. If the silver bromide film is rich in bromine atoms, anion quantum dots are deposited, and the AgBr energy gap is altered so as to increase Vt. If the silver bromide film is rich in silver atoms, cation quantum dots are deposited, and the AgBr energy gap is altered so as to decrease Vt. Atomic layer deposition (ALD) of neutral quantum dots of different sizes also varies Vt. Use of a mass spectrometer during film deposition can assist in varying the composition of the quantum dot film. The metallic quantum dots can be incorporated into ion-doped source and drain regions. Alternatively, the metallic quantum dots can be incorporated into epitaxially doped source and drain regions.

Abstract: In an embodiment, a switching power supply includes: an output stage; a clock generator configured to generate a first clock signal; and a control circuit configured to control the output stage based on the first clock signal, wherein the switching power supply is configured to have a first operating mode synchronized by the first clock signal, and a second operating mode that is asynchronous, wherein the clock generator is configured to maintain the first clock signal at a constant value during the second operating mode.

Abstract: A method for testing a chip comprising receiving N scan-in chains of test data; using the N scan-in chains of test data to perform tests on the chip; receiving a merged expected test-result and masking-instruction signal on X pins of the chip from the off-chip test equipment, X being less than 2*N; decoding the merged expected test-result and masking-instruction signal to extract N decoded output signals, each of the N decoded output signals corresponding to a respective chain of test results.

Abstract: A digital-to-analog converter (DAC) includes a switching network and built-in-self-test (BIST) circuitry. The DAC, in operation, generates analog output signals in response to input codes of a set of input codes of the DAC. The BIST circuitry sequentially applies codes of a determined subset of codes of the set of input codes to test the plurality of switches. The determined subset of codes has fewer codes than the set of input codes. The BIST circuitry detects failures of switches of the plurality of switches based on responses of the DAC to the applied codes. In response to detecting a failure of a switch, the BIST generates a signal indicating a failure of the switching network.