Abstract: A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from the second dielectric by using a chemical dissolution. The removal of the second dielectric from the first dielectric leaves pores in the first dielectric. The pores, which are filled with air, improve the overall dielectric constant of the resulting dielectric element.

Abstract: A transmission gate includes first and second MOS transistors of opposite conductivity type coupled in parallel with each other. Each transistor includes a body connection that is separately biased by corresponding first and second biasing circuits. The first biasing circuit generates a first bias voltage having a voltage level that is generated as a function of the signal at the first node and a first (for example, positive) reference voltage. The second biasing circuit generates a second bias voltage having a voltage level that is generated as a function of the signal at the first node and a second (for examples ground) reference voltage.

Abstract: A driving circuit of a switch includes first and second transistors connected in series to each other and to relative intrinsic diodes in antiseries and driven by a driving device that includes at least one first and one second output terminal connected to the switch to supply it with a first control signal for driving the switch in a first working state and a second control signal for driving the switch in a second working state. At least one latch circuit coupled between respective common gate and source terminals of the first and second transistors supplies the common gate terminal with the first and second control signals, respectively, according to the working state to turn off and turn on the first and second transistors.

Abstract: An integrated circuit chip formed inside and on top of a semiconductor substrate and including: in the upper portion of the substrate, an active portion in which components are formed; and under the active portion and at a depth ranging between 5 and 50 ?m from the upper surface of the substrate, an area comprising sites for gettering metal impurities and containing metal atoms at a concentration ranging between 1017 and 1018 atoms/cm3.

Abstract: A method for protecting, against laser attacks, an integrated circuit chip formed inside and on top of a semiconductor substrate and including in the upper portion of the substrate an active portion in which are formed components, this method including the steps of: forming in the substrate a gettering area extending under the active portion, the upper limit of the area being at a depth ranging between 5 and 50 ?m from the upper surface of the substrate; and introducing diffusing metal impurities into the substrate.

Abstract: A detector array for an imaging system may exploit the different sensitivities of array pixels to an incident flux of low energy photons with a wavelength falling near the high end of the range of sensitivity of the semiconductor. The detector array may provide the de-multiplexable spatial information. The detector array may include a two-terminal multi-pixel array of Schottky photodiodes electrically connected in parallel.

Abstract: An integrated circuit integrator includes a first transconductance amplifier having a gain adjustable based upon a first control signal, and receives, as an input, a signal to be filtered, and generates, as an output, a corresponding amplified signal. The first transconductance amplifier includes an R-C output circuit to filter components from the amplified signal, and an output resistance being adjustable based upon a second control signal. A second transconductance amplifier is matched with the first transconductance amplifier, and has a gain adjustable based upon the first control signal, and a matched output resistance adjustable based upon the second control signal. A circuit is configured to force a reference current through the matched output resistance. An error correction circuit is coupled to the second transconductance amplifier and is configured to generate the second control signal so as to keep constant a voltage on an output of the second transconductance amplifier.

Abstract: A device for detecting temperature variations of the substrate of an integrated circuit chip, including, in the substrate, implanted resistors connected as a Wheatstone bridge, wherein each of two first opposite resistors of the bridge is covered with an array of metal lines parallel to a first direction, the first direction being such that a variation in the substrate stress along this direction causes a variation of the unbalance value of the bridge.

Abstract: A system and method involving a read channel pipeline having a plurality of vector sequencers that may be used to control the processing blocks. In one embodiment, a read channel pipeline may include processing blocks that may be controlled a command word provided by vector sequencers. Incoming data may be delineated by identifying an early period, a steady-state period, and a trailing period. Instead of controlling these blocks with a static state machine controller, a plurality of vector sequencers are coupled to the plurality of processing blocks. Thus, a first vector sequencer may control the processing blocks during the early period and the steady state period, but then hand off control to a second vector sequencer for the trailing period. Using vector sequencers for implementing command words allows for greater programming flexibility once the device has been manufactured and deployed for use.

Abstract: An electronic device includes a substrate provided with a passing opening and a MEMS device including an active surface wherein a portion of the MEMS device is integrated sensitive to chemical/physical variations of a fluid. The active surface of the MEMS device faces the substrate and is spaced therefrom, the sensitive portion being aligned to the opening. A protective package incorporates at least partially the MEMS device and the substrate, leaving at least the sensitive portion of the MEMS device, and the opening of the substrate exposed. A barrier element is positioned in an area which surrounds the sensitive portion to realize a protection structure for the MEMS device, so that the sensitive portion is free.

Abstract: A method of forming a metal-insulator-metal capacitor having top and bottom plates separated by a dielectric layer, one of the top and bottom plates having at least one protrusion extending into a corresponding cavity in the other of the top and bottom plates, the method including the steps of growing one or more nanofibers on a base surface.

Abstract: Power MOS device of the type comprising a plurality of elementary power MOS transistors having respective gate structures and comprising a gate oxide with double thickness having a thick central part and lateral portions of reduced thickness. Such device exhibiting gate structures comprising first gate conductive portions overlapped onto said lateral portions of reduced thickness to define, for the elementary MOS transistors, the gate electrodes, as well as a conductive structure or mesh. Such conductive structure comprising a plurality of second conductive portions overlapped onto the thick central part of gate oxide and interconnected to each other and to the first gate conductive portions by means of a plurality of conducive bridges.

Abstract: A system and method for encoding a stream of bits with a run-length limited high-rate reverse order encoding schema. According to one embodiment, an RLL encoding block includes a receiver having a precoder operable to receive a stream of N-bits having symbols of M-bits in length, a histogram operable to identify an index symbol of M-bits that does not occur within the received stream of N-bits. It is this index symbol that may be used as the key to encoding a block of symbols so as to ensure unique decodability when RLL decoding. Finally, an encoder operable to perform an exclusive-or operation on each symbol with the next symbol stored in the stream. Such an encoding system only adds one symbol of M bits in length to a block of N bits and still results in a stream of bits sufficient to support high-rate requirements and strict timing loop control.

Abstract: A level shifter for integrated circuits includes input stage transistors, reference stage transistors, a cascode stage coupled to the input stage and the reference stage transistors and a pair of comparators. The cascode stage generates a first cascode output and a second cascode output. The input stage transistors selectively conduct a low reference voltage as the first cascode output based on a pair of inputs provided to the input stage transistors. The reference stage transistors selectively conduct a high reference voltage as the second cascode output based on a first comparator output and a second comparator output. The pair of comparators generate the first and the second comparator outputs based on the first and the second cascode outputs.

Abstract: An integrated circuit including one or several metallization levels, metal conductive strips and metal contact pads being formed on the last metallization level, the last level being covered with a passivation layer in which are formed openings above the contact pads. The thickness of the pads, at least at the level of their portions not covered by the passivation layer, is smaller than the thickness of said conductive strips.

Abstract: The present disclosure provides a very thin semiconductor package including a leadframe with a die-attach pad and a plurality of lead terminals, a die attached to the die-attach pad and electrically connected to the lead terminals via bonding wires, a position member disposed upon the die and/or die-attach pad, and a molding material encapsulating the leadframe, the die, and the position member together to form the semiconductor package. The method for manufacturing a very thin semiconductor package includes disposing a first position member on one side of the die-attach pad of a leadframe, attaching a die onto the opposite side of the die-attach pad, optionally disposing a second position member on top of the die, electrically connecting the die to the lead terminals of the leadframe, and encapsulating the leadframe, the die, and the position member(s) together to form the very thin semiconductor package.

Abstract: A method manufactures a digital image sensor including at least one optical lens using a hardenable liquid or gelatinous material. The method includes depositing a calibrated volume of the material on a lens formation base using a tubular needle of a small diameter, so that the volume of material deposited has at least one convex part under the effect of interface energies, and hardening all or part of the volume of deposited material.

Abstract: A lattice tunable filtering circuit includes a first input and a second input, and a first output and a second output. The circuit includes two series branches and two parallel branches. The first and second series branches include a Tunable Resonator Component (TRC) which presents a first series resonance frequency whereas the third and fourth parallel branches present a second series resonance frequency which has a value being lower than that of the first series resonance frequency. The first and second series resonance frequencies are tunable by one analog control quantity. The filtering circuit further includes a feedback control loop for the control of the analog quantity, which feedback is based on a criterion of equality between the modulus of impedances Zs and Zp.

Abstract: An electronic circuit includes configurable cells capable of being functionally linked to logic cells with which they cooperate to form at least one logic circuit if a chaining command signal is in a first (inactive) state. The electronic circuit also includes a logic interconnection circuit for performing the following functions if the chaining command signal is in a second (active) state. Functionally connecting the configurable cells in a linear feedback shift register if an authentication signal is in a first state, or functionally connecting the configurable cells in a chain in a predefined order to form a shift register if the authentication signal is in a second state.

Abstract: This invention relates to cognitive radio based wireless communications of dynamic spectrum access networks, and more particularly to a method of addressing inter-systems (cells) coexistence and spectrum sharing. The described method of spectrum sharing called On-Demand Spectrum Contention, integrates Dynamic Frequency Selection and Transmission Power Control with iterative on-demand spectrum contentions and provides fairness, adaptability, and efficiency of spectrum access for dynamic spectrum access systems using active inter-system coordination.