Patents Assigned to STMicroelectronics
  • Publication number: 20140217938
    Abstract: An embodiment of a motor controller includes a motor driver and a signal conditioner. The motor driver is operable to generate a motor-coil drive signal having a first component at a first frequency, and the signal conditioner is coupled to the motor driver and is operable to alter the first component. For example, if the first component of the motor-coil drive signal causes the motor to audibly vibrate (e.g., “whine”), then the signal conditioner may alter the amplitude or phase of the first component to reduce the vibration noise to below a threshold level.
    Type: Application
    Filed: April 8, 2014
    Publication date: August 7, 2014
    Applicants: STMICROELECTRONICS, INC., STMICROELECTRONICS S.r.l.
    Inventors: Frederic BONVIN, Ezio GALBIATI
  • Patent number: 8796936
    Abstract: An ambient light sensor integrated in a compact fluorescent lamp that, in turn, may include a controller and a radiation source. The ambient light sensor may include a radiation receiver to receive and filter incident radiation to obtain a value of the level of infrared radiation, and an electronic module to determine if the value is above a reference threshold value to enable the controller to switch the state of the radiation source.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics (Research & Development) Limited
    Inventor: Jeffrey M. Raynor
  • Patent number: 8798448
    Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics, Inc.
    Inventors: Ming Fang, Fuchao Wang
  • Patent number: 8796106
    Abstract: A method is for the formation of at least one filled isolation trench having a protective cap in a semiconductor layer, and a semiconductor device with at least one filled isolation trench having a protective cap. The method allows obtaining, in an easy way, filled isolation trenches exhibiting excellent functional and morphological properties. The method therefore allows the obtainment of effective filled isolation trenches which help provide elevated, reliable and stable isolation properties.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics S.R.L.
    Inventors: Daniele Merlini, Domenico Giusti, Fabrizio Fausto Renzo Toia, Federica Ronchi
  • Patent number: 8797092
    Abstract: An embodiment of a discharge circuit for evacuating electric charge accumulated in circuit nodes of a charge pump during a discharge phase consequent to a shutdown of the charge pump is proposed. The charge pump is configured to bias each circuit node with a corresponding pump voltage during an operational phase of the charge pump. The discharge circuit includes a generator circuit configured to generate a discharge current during the discharge phase. The discharge circuit further includes means for evacuating the electric charge stored in each circuit node of the charge pump during a corresponding portion of the discharge phase; such means for evacuating include a respective discharge stage for each circuit node of the charge pump. Each discharge stage includes a first discharge circuit branch and a second discharge circuit branch coupled to the corresponding circuit node.
    Type: Grant
    Filed: August 31, 2011
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics S.r.l.
    Inventors: Guido De Sandre, Luca Bettini, Gianni Giacomi
  • Patent number: 8797121
    Abstract: A distributed coupler including a first line intended to convey a radio signal between its two ends and a second line intended to sample, by coupling, part of the signal, wherein: one of the lines is formed on an insulating substrate; and the other line is formed in a lead frame supporting the substrate, one line being above the other.
    Type: Grant
    Filed: September 8, 2011
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics (Tours) SAS
    Inventors: Hilal Ezzeddine, Claire Laporte
  • Patent number: 8796765
    Abstract: An integrated circuit chip includes: a plurality of parallel wells of alternated conductivity types formed in the upper portion of a semiconductor substrate of a first conductivity type; in each well of the first type, a plurality of MOS transistors having a channel of the second conductivity type, and in each well of the second type, a plurality of MOS transistors having a channel of the first type, transistors of neighboring wells being inverted-connected; and a device of protection against attacks, including: a layer of the second type extending under said plurality of wells, from the lower surface of said wells; and regions of lateral insulation between the wells, said regions extending from the upper surface of the wells to said layer.
    Type: Grant
    Filed: June 13, 2012
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Mathieu Lisart, Alexandre Sarafianos, Olivier Gagliano, Marc Mantelli
  • Patent number: 8796147
    Abstract: Insulating layers can be formed over a semiconductor device region and etched in a manner that substantially reduces or prevents the amount of etching of the underlying channel region. A first insulating layer can be formed over a gate region and a semiconductor device region. A second insulating layer can be formed over the first insulating layer. A third insulating layer can be formed over the second insulating layer. A portion of the third insulating layer can be etched using a first etching process. A portion of the first and second insulating layers beneath the etched portion of the third insulating layer can be etched using at least a second etching process different from the first etching process.
    Type: Grant
    Filed: December 17, 2010
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics, Inc.
    Inventors: Nicolas Loubet, Qing Liu, Prasanna Khare
  • Patent number: 8797066
    Abstract: There is provided a circuit and method for detecting a bad clock condition on a clock signal that includes sampling the value of the clock signal at a first plurality of time delays following a rising edge on the clock signal. This method also includes sampling the value of the clock signal at a second plurality of time delays following a falling edge on the clock signal.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics (Research & Development) Limited
    Inventor: Mark Trimmer
  • Patent number: 8796059
    Abstract: Electronic device including a substrate provided with at least one passing opening, a MEMS device with a differential sensor provided with a first and a second surface having at least one portion sensitive to chemical and/or physical variations of fluids present in correspondence with a first and a second opposed active surface thereof. The first surface of the MEMS device leaving the first active surface exposed and the second surface being provided with a further opening which exposes said second opposed active surface, the electronic device being characterized in that the first surface of the MEMS device faces the substrate and is spaced therefrom by a predetermined distance, the sensitive portion being aligned to the passing opening of the substrate, and in that it also comprises a protective package, which incorporates at least partially the MEMS device and the substrate.
    Type: Grant
    Filed: January 25, 2012
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics S.r.l.
    Inventors: Lorenzo Baldo, Chantal Combi, Mario Francesco Cortese
  • Patent number: 8796826
    Abstract: A device and method for minimizing the forces that may compromise a lead frame mount to a support structure in an integrated circuit die package during various packaging method steps. When a window clamp is used to provide pressure during a lead frame bonding step or during a wire bonding step during packaging, the vertical force applied by the window clamp may be transferred in lateral direction by the physical contour of the top plate of the support structure. By changing the physical contour of the top plate of the support structure, such as by disposing a specific kind of contoured protrusion, one may minimize or eliminate the lateral forces that act against achieving a solid bond of the lead frame to the support structure. Further, during wire bonding, the same minimization or elimination of lateral forces lead to improved wire bonding.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics Pte Ltd
    Inventors: Xueren Zhang, Kim-Yong Goh, Wingshenq Wong
  • Patent number: 8796139
    Abstract: A bar formed from a reconstituted wafer and containing one or more conductive material filled voids is used to electrically and physically connect the top and bottom packages in a package-on-package (PoP) package. The bar is disposed in the fan out area of the lower package forming the PoP package.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics Pte Ltd
    Inventors: Anandan Ramasamy, Yonggang Jin, Yun Liu
  • Patent number: 8797069
    Abstract: High-speed RF differential, Quadrature, divide-by-2 clock divider designs are based on inverters and clocking circuits connected in a serial ring formation. In one embodiment, only NMOS transistors are used in the inverters, and only PMOS transistors are used in the clocking circuits. This structure uses only 12 transistors. The input can be coupled directly to a VCO output, and provides minimum loading, as each VCO output is connected to only two transistors. Another embodiment comprises clocked inverter stages connected in a serial ring configuration with inverters between stages. The RF clock (or VCO signal) is used at the outer side of the inverters for speed improvement. In both circuits, positive and negative clock inputs are connected alternately at each stage of the ring.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics International N.V.
    Inventors: Leonardus Hesen, Paul Mateman, Johannes Petrus Antonius Frambach
  • Patent number: 8796148
    Abstract: A method for producing a deep trench in a substrate includes a series of elementary etch cycles each etching a portion of the trench. Each elementary cycle includes deposition of a passivation layer on the sidewalls and the bottom of the trench portion etched during previous cycles; followed by pulsed plasma anisotropic ion etching of the trench portion etched during previous cycles, the etching; being implemented in an atmosphere comprising a passivating species; and including a first etch sequence followed by a second etch sequence of less power than the power of the first etch sequence. The first etch sequence etches the passivation layer deposited in the bottom of the portion so as to access the substrate and etches the free substrate at the bottom of the portion while leaving a passivation layer on sidewalls of the portion.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: François Leverd, Laurent Favennec, Arnaud Tournier
  • Patent number: 8798533
    Abstract: A method for evaluating the current coupling factor between an electromagnetic transponder and a terminal, and a transponder implementing this method, wherein a ratio between data representative of a voltage across an oscillating circuit of the transponder and obtained for two capacitance values of the oscillating circuit is compared with one or several thresholds.
    Type: Grant
    Filed: June 2, 2011
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics (Rousset) SAS
    Inventor: Luc Wuidart
  • Patent number: 8799623
    Abstract: A reconfigurable hierarchical computer architecture having N levels, where N is an integer value greater than one, wherein said N levels include a first level including a first computation block including a first data input, a first data output and a plurality of computing nodes interconnected by a first connecting mechanism, each computing node including an input port, a functional unit and an output port, the first connecting mechanism capable of connecting each output port to the input port of each other computing node; and a second level including a second computation block including a second data input, a second data output and a plurality of the first computation blocks interconnected by a second connecting means for selectively connecting the first data output of each of the first computation blocks and the second data input to each of the first data inputs and for selectively connecting each of the first data outputs to the second data output.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: August 5, 2014
    Assignee: STMicroelectronics S.A.
    Inventor: Joël Cambonie
  • Publication number: 20140210071
    Abstract: An integrated structure includes a support supporting at least one chip and a heat dissipating housing, attached to the chip. The housing is thermally conductive and has a thermal expansion compatible with the chip. The housing may further including closed cavities filled with a phase change material.
    Type: Application
    Filed: January 14, 2014
    Publication date: July 31, 2014
    Applicants: STMICROELECTRONICS (CROLLES 2) SAS, STMICROELECTRONICS SA
    Inventors: Laurent-Luc Chapelon, Pascal Ancey, Sandrine Lhostis
  • Publication number: 20140209141
    Abstract: Method for generation of electrical power within a three-dimensional integrated structure comprising several elements electrically interconnected by a link device, the method comprising the production of a temperature gradient in at least one region of the link device resulting from the operation of at least one of the said elements, and the production of electrical power using at least one thermo-electric generator comprising at least one assembly of thermocouples electrically connected in series and thermally connected in parallel and contained within the said region subjected to the said temperature gradient.
    Type: Application
    Filed: July 5, 2012
    Publication date: July 31, 2014
    Applicant: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Pascal Fornara, Christian Rivero
  • Publication number: 20140210010
    Abstract: A method for fabricating a finFET device having an insulating layer that insulates the fin from a substrate is described. The insulating layer can prevent leakage current that would otherwise flow through bulk semiconductor material in the substrate. The structure may be fabricated starting with a bulk semiconductor substrate, without the need for a semiconductor-on-insulator substrate. Fin structures may be formed by epitaxial growth, which can improve the uniformity of fin heights in the devices.
    Type: Application
    Filed: January 30, 2013
    Publication date: July 31, 2014
    Applicants: International Business Machines Corporation, STMicroelectronics, Inc.
    Inventors: Qing Liu, Junli Wang
  • Patent number: 8793228
    Abstract: A system includes a storage subsystem having a data area and a header area. The data area is for storing contents of at least one data file, and the header area is for storing access parameters and status information for accessing each data file individually. The data area and the header area define a storage area in the storage subsystem. Multiple files are efficiently managed based on utilization of the storage area in the storage subsystem.
    Type: Grant
    Filed: January 14, 2009
    Date of Patent: July 29, 2014
    Assignee: STMicroelectronics PVT. Ltd.
    Inventors: Vipin Bansal, Deepak Naik, Raunaque Quaiser, Alok Kumar Mittal