Abstract: Clustered VLIW processing elements, each preferably simple and identical, are coupled by a runtime reconfigurable inter-cluster interconnect to form a coprocessor executing only those portions of a program having high instruction level parallelism. The initial portion of each program segment executed by the coprocessor reconfigures the interconnect, if necessary, or is skipped. Clusters may be directly connected to a subset of neighboring clusters, or indirectly connected to any other cluster, a hierarchy exposed to the programming model and enabling a larger number of clusters to be employed. The coprocessor is idled during remaining portions of the program to reduce power dissipation.

Abstract: According to one implementation, the slave identifier bits are tested recursively in groups of p bits. For these p bits, each slave will recognize, in its p corresponding identifier bits, one combination out of the 2p possible combinations. The slaves respond simultaneously (20) over the bus, for example an I2C bus, to a request from the master. The response is given by outputting a series of “1” bits in which each slave inserts a “0”, which is, for example, the priority logic value on the bus, the position of the “0” in the series of “1” bits being dependent on the binary value of the combination recognized by the slave in the group of p bits of its identifier. The master progressively determines on the fly, based on the bits of the frame received, the values of bits of these digital information items.

Abstract: A method of protecting a circuit from attacks aiming to discover secret data used during the execution of a cryptographic calculation by the circuit, by, executing a transformation calculation implementing a bijective transformation function, receiving as input a secret data, and supplying a transformed data, executing a cryptographic calculation receiving as input a data to process and the transformed data, and executing an inverse transformation calculation receiving as input the result of the cryptographic calculation, and supplying a result that the cryptographic calculation would have supplied if it had been applied to the data to process and directly to the secret data, the data to process belong to a stream of a multiplicity of data, the transformed data being supplied as input to the cryptographic calculation for all the data of the stream.

Abstract: A power device integrated on a semiconductor substrate and having a plurality of conductive bridges within a trench gate structure. In an embodiment, a semiconductor substrate includes a trench having sidewalls and a bottom, the walls and bottom are covered with a first insulating coating layer which then also includes a conductive gate structure. An embodiment provides the formation of the conductive gate structure with covering at least the sidewalls with a second conductive coating layer of a first conductive material. This results in a conductive central region of a second conductive material having a different resistivity than the first conductive material forming a plurality of conductive bridges between said second conductive coating layer and said conductive central region.

Abstract: In a microelectromechanical device, a mobile mass is suspended above a substrate via elastic suspension elements and is rotatable about said elastic suspension elements, a cover structure is set above the mobile mass and has an internal surface facing the mobile mass, and a stopper structure is arranged at the internal surface of the cover structure and extends towards the mobile mass in order to stop a movement of the mobile mass away from the substrate along an axis (z) transverse to the substrate. The stopper structure is arranged with respect to the mobile mass so as to reduce an effect of reciprocal electrostatic interaction, in particular so as to minimize a resultant twisting moment of the mobile mass about the elastic suspension elements.

Abstract: A low voltage isolation switch is coupled between an input terminal suitable for receiving a high voltage signal and an output terminal suitable for transmitting this high voltage signal to a load. The isolation switch includes a first driving transistor coupled between a first reference terminal and an intermediate node, a second driving transistor coupled between the intermediate node and the second reference terminal, a control transistor connected across a diode block coupled between the input and output terminals. The control transistor has a control terminal connected to the intermediate node through a low voltage decoupling block that includes first and second substrate terminals, first and second parasitic capacitive element connected to these first and second substrate terminals, and first and second decoupling transistors coupled in parallel to each other and having control terminals connected to the first and second parasitic capacitive elements, respectively.

Abstract: Methods and systems are described for transmitting and displaying video data after a hot plug event during a start-up dead period. In particular, hot plug events occurring when a toggleable hot plug detection mechanism is used.

Abstract: A control device for controlling a switching power supply adapted to convert an input voltage into an output voltage according to a switching rate of a switching element. The control device includes first control means for switching the switching element in a first working mode at a constant frequency and second control means for switching the switching element in a second working mode at a variable frequency, under a maximum frequency, in response to the detection of a predefined operative condition of the switching power supply. The control device further includes means for selecting the first working mode or the second working mode.

Abstract: The trimming circuit includes a plurality of trimmable resistances that may be coupled among them, each resistance being connected in parallel to a respective fuse. The trimming circuit allows burning any number of fuses according to a fixed trimming sequence using only one or two dedicated pins because it includes an input diode-connected transistor and a plurality of trimming transistors of different sectional area, each connected to force current throughout a respective one of the shunt fuses and coupled to the input diode-connected transistor such to mirror the current flowing therethrough. The fuses of the trimming circuit may be burnt by applying a trimming voltage to the diode-connected input transistor with a voltage generator connected between a dedicated pin of the circuit and a terminal at a reference potential, such to force a current therethrough as long as the mirrored currents flowing throughout the fuses burn them.

Abstract: An image sensor having a semiconductor substrate, at least two photosites in the substrate and an isolation region between the photosites. The isolation region has a first trench covered by a thin electrically insulating liner and filled with an electrically conductive material, the conductive material has a second trench at least partially filled with an optically isolating material.

Abstract: A system for performing depth-based scaling of 3D content. The system comprises: 1) a content source configured to provide an input image comprising a plurality of input image objects; and 2) a processor configured to receive the input image and to receive a depth map comprising depth data associated with each of the plurality of input image objects. The processor generates an output image comprising a plurality of output image objects, wherein each of the plurality of output image objects corresponding to one of the plurality of input image objects. The processor scales a size of a first output image object relative to the size of a second output image object based on depth data associated with the first output image object and the second output image object.

Abstract: A testing device uses a selectively deformable substrate to capture and retain spherical beads for genetic experimentation. A method of fabricating the device is described in which a silicon substrate can be coated with a photosensitive, bio-compatible polymer for photolithographic patterning using a single mask exposure. The polymer is patterned with a matrix of wells, each well capable of expansion to accept placement of a bead in the well, and contraction to secure the bead in the well. The polymer can exhibit piezoelectric properties that cause it to respond mechanically to a selected electrical excitation.

Abstract: A power supply apparatus includes a power supply circuit and a power-on circuit. The power-on circuit detects a remotely transmitted control signal and causes a transition of the power supply circuit to a turned on state. The power-on circuit includes a transducer configured to provide a power-on signal in response to the remote control signal. The transducer triggers transition to the turned on state through a switch driven by the power-on signal output from the transducer and arranged to supply a power supply circuit enable signal. A DC blocking capacitor is connected between an output of the transducer and a control terminal of the switch.

Abstract: An electronic device may include a substrate, a buried oxide (BOX) layer overlying the substrate, at least one semiconductor device overlying the BOX layer, and at least one shallow trench isolation (STI) region in the substrate and adjacent the at least one semiconductor device. The at least one STI region defines a sidewall surface with the substrate and may include an oxide layer lining a bottom portion of the sidewall surface, a nitride layer lining a top portion of the sidewall surface above the bottom portion, and an insulating material within the nitride and oxide layers.

Abstract: A manufacturing process includes forming a reconstituted wafer, including embedding semiconductor dice in a molding compound layer and forming through-wafer vias in the layer. A fan-out redistribution layer is formed on a front side of the wafer, with electrical traces interconnecting the dice, through-wafer vias, and contact pads positioned on the redistribution layer. Solder balls are positioned on the contact pads and a molding compound layer is formed on the redistribution layer, reinforcing the solder balls. A second fan-out redistribution layer is formed on a back side of the wafer, with electrical traces interconnecting back ends of the through-wafer vias and contact pads positioned on a back face of the second redistribution layer. Flip-chips and/or surface-mounted devices are coupled to the contact pads of the second redistribution layer and encapsulated in an underfill layer formed on the back face of the second redistribution layer.

Abstract: A method of forming a transistor is disclosed, in which gate-to-substrate leakage is addressed by forming and maintaining a conformal oxide layer overlying the transistor gate. Using the method disclosed for an n-type device, the conformal oxide layer can be formed as part of the source-drain doping process. Subsequent removal of residual phosphorous dopants from the surface of the oxide layer is accomplished without significant erosion of the oxide layer. The removal step uses a selective deglazing process that employs a hydrolytic reaction, and an acid-base neutralization reaction that includes an ammonium hydroxide component.

Abstract: A transmission channel configured to transmit high-voltage pulses and to receive echos of the high-voltage pulses includes a high voltage buffer, a voltage clamp and a switch. The voltage clamp may include clamping transistors and switching off transistors coupled together in series with body diodes in anti-series. The transmission channel may include a reset circuit configured to bias the transmission channel between pulses. The switch may include a bootstrap circuit.

Abstract: A semiconductor device that includes a semiconductor body, having a front side and a back side opposite to one another in a first direction of extension; a drift region, which extends in the semiconductor body, faces the front side, and has a first type of conductivity and a first value of doping; a body region, which has a second type of conductivity opposite to the first type of conductivity, extends in the drift region, and faces the front side of the semiconductor body; a first control terminal, which extends on the front side of the semiconductor body, at least partially overlapping, in the first direction of extension, the body region; and a second control terminal, which extends to a first depth in the semiconductor body, inside the body region, and is staggered with respect to the first control terminal.

Abstract: A semiconductor device includes a semiconductor substrate having a channel region therein, a gate structure above the channel region, and source and drain regions on opposite sides of the gate structure. A respective contact is on each of the source and drain regions. At least one of the source and drain regions has an inclined upper contact surface with the respective contact. The inclined upper contact surface has at least a 50% greater area than would a corresponding flat contact surface.

Abstract: An electronic device may include a substrate, a buried oxide (BOX) layer overlying the substrate, at least one semiconductor device overlying the BOX layer, and at least one STI region in the substrate and adjacent the at least one semiconductor device. The at least one STI region defines a sidewall surface with the substrate and may include a nitride layer lining a bottom portion of the sidewall surface, an oxide layer lining a top portion of the sidewall surface above the bottom portion, and an insulating material within the nitride and oxide layers.