Abstract: A voltage regulator bypass circuit to control bypass of a voltage regulator of an integrated circuit device, the voltage regulator bypass circuit including a first voltage detector, a second voltage detector, and circuit. The first voltage detector to detect that a core circuitry voltage level is above a first threshold and to assert a first detect signal at an output in response to the detection. The second voltage detector to detect that an unregulated supply voltage is above a second threshold and to assert a second detect signal at an output in response to the detection. The circuit having a first input coupled to the output of the first voltage detector and a second input coupled to the output of the second voltage detector, the circuit to bypass the voltage regulator in response the output of the latch being cleared.

Abstract: A cap for a microelectromechanical system device includes a first layer of, e.g., Bismaleimide Triazine (BT) resin material in which a through-aperture is formed, laminated to a second layer of BT resin material that closes the aperture in the first layer, forming a cavity. The first and second layers are laminated with a thermosetting adhesive that is sufficiently thick to encapsulate particles that may remain from a routing operation for forming the apertures. The interior of the cavity, including exposed portions of the adhesive, and the exposed face of the first layer are coated with an electrically conductive paint. The cap is adhered to a substrate over the MEMS device using an electrically conductive adhesive, which couples the conductive paint layer to a ground plane of the substrate. The layer of conductive paint serves as a shield to prevent or reduce electromagnetic interference acting on the MEMS device.

Abstract: An integrated circuit may include a digital output port including a buffer stage that includes subassemblies of MOSFET transistors. One subassembly may include two pull-up transistors having sources connected to a common high voltage, and having drains connected to a common node connected to the output terminal. Another subassembly may include pull-down transistors having sources connected to a common low voltage, and having drains connected to the common node. The pull-up and pull-down transistors are formed in a thin semiconductor layer of an FDSOI substrate. The substrate may include a thick semiconductor layer and an oxide layer separating the thin and thick semiconductor layers. Areas of the thick semiconductor layer facing the pull-up and pull-down transistors may be connected to a circuit configured to vary a threshold voltage of the pull-up and pull-down transistors.

Abstract: When two loudspeakers play the same signal, a “phantom center” image is produced between the speakers. However, this image differs from one produced by a real center speaker. In particular, acoustical crosstalk produces a comb-filtering effect, with cancellations that may be in the frequency range needed for the intelligibility of speech. Methods for using phase decorrelation to fill in these gaps and produce a flatter magnitude response are described, reducing coloration and potentially enhancing dialogue clarity. These methods also improve headphone compatibility and reduce the tendency of the phantom image to move toward the nearest speaker.

Abstract: In an embodiment, access transactions of at least one module of a system such as a System-on-Chip (SoC) to one of a plurality of target modules, such as memories, are managed by assigning transactions identifiers subjected to a consistency check. If an input identifier to the check has already been issued for the same given target module, to the related identifier/given target module pair the same input identifier is assigned as a consistent output identifier. If, on the contrary, said input identifier to the check has not been already issued or has already been issued for a target module different from the considered one, to the related identifier/given target module pair a new identifier, different from the input identifier, is assigned as a consistent output identifier.

Abstract: An interface system is used for interfacing a synchronous circuit with an asynchronous circuit, wherein the synchronous circuit generates, in response to a clock signal, a first control signal for indicating that a first data signal contains valid data, and wherein the asynchronous circuit generates, according to an asynchronous communication protocol, a second control signal indicating the state of transmission of a second data signal.

Abstract: A method of manufacturing a modular semiconductor subassembly: providing at least one semiconductor subassembly having a modular sidewall element of modular dimensions and a semiconductor substrate base element coupled to the modular sidewall element that has at least one semiconductor element with a layout sized to be accommodated by modular dimensions of the modular sidewall element. If a modular package protective cover is to be used: providing the modular package protective cover configured to accommodate the semiconductor subassembly in accordance with a modular design; securing the semiconductor subassembly in the modular package protective cover to create a modular package assembly; and mounting the modular package assembly to a core, with a base side of the semiconductor substrate base element in contact with the core; otherwise: mounting the at semiconductor subassembly to the core, with the base side of the semiconductor substrate base element in contact with the core.

Abstract: A modified MOSFET structure comprises an integrated field effect rectifier connected between the source and drain of the MOSFET to shunt current during switching of the MOSFET. The integrated FER provides faster switching of the MOSFET due to the absence of injected carriers during switching while also decreasing the level of EMI relative to discrete solutions. The integrated structure of the MOSFET and FER can be fabricated using N-, multi-epitaxial and supertrench technologies, including 0.25 ?m technology. Self-aligned processing can be used.

Abstract: A power switch includes first and second MOS transistors in series between first and second nodes. Both the first and second transistors have a gate coupled to its substrate. First and second resistive elements are coupled between the gate of the first transistor and the first node, and between the gate of the second transistor and the second node, respectively. A triac is coupled between the first and second nodes. The gate of the triac is coupled to a third node common to the first and second transistors. A third MOS transistor has a first conduction electrode coupled to the gate of the first transistor and a second conduction electrode coupled to the gate of the second transistor.

Abstract: Pins on an RFIC package carry RF signals between the package and a PCB. A first capacitor is coupled between a selected pin of the RFIC package near the pins carrying the RF signals and a radio-frequency ground on the PCB. A coupling between the RFIC package and the PCB is modeled, and includes modeling of the pins of interest and at least one parasitic element of the coupling. A capacitance of the first capacitor is selected based on the modeling to obtain desired performance at selected operational frequencies. A second capacitor may be coupled between the selected pin a radio frequency ground of the RFIC package. An inductor may be coupled in parallel across the first capacitor.

Abstract: A detecting device detects the midpoint voltage of a half bridge circuit of transistors. The circuit comprises a bootstrap capacitor having one terminal connected to the midpoint node of the half bridge circuit and another terminal connected to a supply circuit. The device comprises a further capacitor connected between a second terminal of the bootstrap capacitor and circuit means adapted to form a low impedance node for a current signal circulating in said further capacitor during the transitions from the low value to the high value and from the high value to the low value of the midpoint voltage. The device comprises a detector to detect said current signal circulating in said further capacitor and to output at least a first signal indicating the transitions from the low value to the high value or from the high value to the low value according to said current signal.

Abstract: The present disclosure is directed to a device and a method for forming a precision temperature sensor switch with a Wheatstone bridge configuration of four resistors and a comparator. When the temperature sensor detects a temperature above a threshold, the switch will change states. The four resistors in the Wheatstone bridge have the same resistance, with three of the resistors having a low temperature coefficient of resistance and the fourth resistor having a high temperature coefficient of resistance. As the temperature increases, the resistance of the fourth resistor will change. The change in resistance of the fourth resistor will change a voltage across the bridge. The voltage across the bridge is coupled to the comparator and compares the voltage with the threshold temperature, such that when the threshold temperature is exceeded, the comparator switches the output off.

Abstract: An amplifier circuit includes an input terminal and an output terminal. A current sinking transistor includes a first conduction terminal coupled to the output terminal and a second conduction terminal coupled to a reference supply node. A voltage sensing circuit has a first input coupled to the input terminal and a second input coupled to the output terminal. An output of the voltage sensing circuit is coupled to the control terminal of the current sinking transistor. The voltage sensing circuit functions to sense a rise in the voltage at the output terminal which exceeds the voltage at the input terminal, and respond thereto by activating the current sinking transistor.

Abstract: A drive circuit includes a first transistor coupled in series with a second transistor at a first intermediate node coupled to a load. An amplifier has an output driving a control terminal of the second transistor. The amplifier includes a first input coupled to a second intermediate node and a second input coupled to a reference voltage. A feedback circuit is coupled between the first intermediate node and the second intermediate node. A slope control circuit is coupled the second intermediate node. The slope control circuit injects a selected value of current into the second intermediate node, that current operating to control the output of the amplifier in setting a slope for change in voltage at the first intermediate node.

Abstract: An integrated circuit is formed having an array of memory cells located in the dielectric stack above a semiconductor substrate. Each memory cell has two adjustable resistors and two heating elements. A dielectric material separates the heating elements from the adjustable resistors. One heating element alters the resistance of one of the resistors by applying heat thereto to write data to the memory cell. The other heating element alters the resistance of the other resistor by applying heat thereto to erase data from the memory cell.

Abstract: The information bits and the parity bits are encrypted in a microcontroller and transmitted on a bus to a transceiver head which forms the frames to be transmitted on a channel from encrypted information bits and from encrypted parity bits received on the bus.

Abstract: In one embodiment there is disclosed a method for manufacturing an integrated circuit in a semiconductor substrate including through vias and a coplanar line, including the steps of: forming active components and a set of front metallization levels; simultaneously etching from the rear surface of the substrate a through via hole and a trench crossing the substrate through at least 50% of its height; coating with a conductive material the walls and the bottom of the hole and of the trench; and filling the hole and the trench with an insulating filling material; and forming a coplanar line extending on the rear surface of the substrate, in front of the trench and parallel thereto, so that the lateral conductors of the coplanar line are electrically connected to the conductive material coating the walls of the trench.

Abstract: An integrated circuit includes active circuitry disposed at a surface of a semiconductor body and an interconnect region disposed above the semiconductor body. A thermoelectric material is disposed in an upper portion of the interconnect region away from the semiconductor body. The thermoelectric material is configured to deliver electrical energy when exposed to a temperature gradient. This material can be used, for example, in a method for detecting the repackaging of the integrated circuit after it has been originally packaged.

Abstract: A validation system includes a test block that operates to apply a set of inputs to a system under test, such as a test system or an executable test algorithm, and receive from said system under test a first set of outputs produced by operation of the system under test in response to application of the set of inputs. The first set of outputs, as well as a second set of outputs reflecting output produced by operation of a reference system or executable reference algorithm in response to application of the same set of inputs, is processed to make a validation determination. A validation processing block compares the first and second sets of outputs to validate the system under test as an equivalent to the reference system.

Abstract: The present disclosure is directed to fluid filtering systems and methods for use during semiconductor processing. One or more embodiments are directed to fluid filtering systems and methods for filtering ions and particles from a fluid as the fluid is being provided to a semiconductor wafer processing tool, such as to a semiconductor wafer cleaning tool.