Patents Assigned to Technologies AG
  • Layer between interfaces of different components in semiconductor devices
    Patent number: 7834467
    Abstract: A layer improves adhesion between interfaces of different components in semiconductor devices. The interface of a first component includes surfaces of a circuit carrier and the interface of a second component includes contact surfaces of a plastic package molding compound. The adhesion-improving layer includes a mixture of polymeric chain molecules and carbon nanotubes.
    Type: Grant
    Filed: March 28, 2007
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventors: Michael Bauer, Alfred Haimerl, Khalil Hosseini, Angela Kessler, Joachim Mahler, Wolfgang Schober
  • Semiconductor device with compensation current
    Patent number: 7834609
    Abstract: A semiconductor device is disclosed. In one embodiment, the semiconductor device includes a first resistor, a second resistor, and a transistor. The second resistor is configured to receive a current via the first resistor. The transistor is configured to be driven via the first resistor and the second resistor and provide a compensation current. The current includes the compensation current and a reference current and changes in the current are compensated for via the compensation current which limits changes in the reference current.
    Type: Grant
    Filed: August 30, 2007
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventor: Stefan Irmscher
  • Dry type pole-mounted transformer
    Patent number: 7834736
    Abstract: A distribution transformer adapted for mounting to a utility pole. The distribution transformer includes a plurality of coil assemblies mounted to a ferromagnetic core. Each of the coil assemblies includes a low voltage coil and a high voltage coil. The low voltage coils are connected together and the high voltage coils are connected together. An encasement comprised of an insulating resin encapsulates the core and the coil assemblies. The encasement includes a substantially annular body and a pair of high voltage bushings extending outwardly from the body. Terminals extend from the high voltage bushings and are connected to the high voltage coils.
    Type: Grant
    Filed: July 31, 2009
    Date of Patent: November 16, 2010
    Assignee: ABB Technology AG
    Inventors: Charles W. Johnson, Joel A. Kern
  • Method for producing a vacuum interrupter
    Patent number: 7832079
    Abstract: The invention relates to a vacuum interrupter chamber and a method for producing the same according to the preambles of patent claims 1 and 3. In order here to improve a vacuum interrupter chamber of this type and a method for producing the same and the subsequent casting to the extent that the advantages described above are utilized but the disadvantages described are avoided, it is proposed according to the invention that, in preparation for later casting, the vacuum interrupter chamber (1) is provided on the outer surface with a protective sheath (2) consisting of an elastic or elastomeric or plastomeric material, which is applied to the surface of the vacuum interrupter chamber without further expanding mechanical aids by heat shrinkage alone.
    Type: Grant
    Filed: June 27, 2005
    Date of Patent: November 16, 2010
    Assignee: ABB Technology AG
    Inventors: Oliver Claus, Hartmut Mildes, Till Rümenapp
  • Method for manufacturing an electronic component and corresponding electronic component
    Patent number: 7834460
    Abstract: The invention pertains to a method for manufacturing an electronic component with a semiconductor element (1) that is contacted and fixed on a substrate surface (2). The method is characterized in that the rear side of the semiconductor element and/or the substrate surface is coated with an adhesive structure consisting of a first component (3) that solidifies, particularly hardens or cures, and an electrically conductive second component (4) that does not solidify, wherein the semiconductor element is bonded to the substrate surface in a contacting fashion. The electronic component is characterized in that a structured adhesive layer arranged between the semiconductor element and the substrate surface comprises a solidifying first component (3) and an electrically conductive non-solidifying second component (4).
    Type: Grant
    Filed: May 9, 2007
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventors: Michael Bauer, Ludwig Heitzer, Christian Stuempfl
  • Semiconductor chip package, semiconductor chip assembly, and method for fabricating a device
    Patent number: 7834464
    Abstract: A method for fabricating a device, a semiconductor chip package, and a semiconductor chip assembly is disclosed. One embodiment includes applying at least one semiconductor chip on a first form element. At least one element is applied on a second form element. A material is applied on the at least one semiconductor chip and on the at least one element.
    Type: Grant
    Filed: October 9, 2007
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventors: Thorsten Meyer, Markus Brunnbauer, Jens Pohl
  • Communication in accordance with a master-slave communication protocol
    Patent number: 7836234
    Abstract: A communication apparatus for communication according to a master-slave communication protocol is formed as a slave instance communicating with a master instance via a bus. The master instance is operative to switch the bus into a bus suspend state if no bus activity is present during a predetermined interval. In response to a bus suspend state, the slave instance makes a transition to a slave suspend state. The communication apparatus includes a monitor configured to monitor the bus activity and a transmitter configured to transmit a signal via the bus if the monitor does not recognize any bus activity during part of the predetermined interval and a transition of the slave instance to the slave suspend state is undesirable, wherein the signal is operative to prevent the master instance from switching the bus into the bus suspend state.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventors: Stefan Erdmenger, Berndt Gammel, Josef Riegebauer, Till Winteler
  • Characterization of fancy yarn
    Patent number: 7832190
    Abstract: According to the method for characterizing fancy yarn, at least one characteristic of the fancy yarn is scanned along the longitudinal direction of the fancy yarn. Values of the scanning are evaluated and the results of the evaluation are outputted. The results of the evaluation are the fancy yarn parameters such as base yarn mass, base yarn diameter, slub distance, mass increase of a slub, slub diameter increase, slub diameter, slub length and/or slub total mass. On evaluation, a measurement curve is produced from the values of the scanning, and an area (A(x)) between the measurement curve and a previously determined base yarn mass is computed. A permanent increase in the course of the area (A(x)) is used as a criterion for the presence of a slub. Slubs may be differentiated from yarn imperfections in a reliable manner by way of the area (A(x)).
    Type: Grant
    Filed: November 15, 2006
    Date of Patent: November 16, 2010
    Assignee: Uster Technologies AG
    Inventors: Christine Meixner, Gabriela Peters, Sandra Edalat-Pour
  • Semiconductor device including a pressure sensor
    Patent number: 7832279
    Abstract: A semiconductor device includes a first cavity within a semiconductor substrate and a second cavity within the semiconductor substrate. The second cavity is open to an atmosphere and defines a first lamella between the first cavity and the second cavity. The semiconductor device includes a first sense element configured for sensing a pressure on the first lamella.
    Type: Grant
    Filed: September 11, 2008
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventors: Thoralf Kautzsch, Boris Binder, Dirk Meinhold, Ben Rosam, Bernd Foeste, Andreas Thamm
  • Bipolar transistor FINFET technology
    Patent number: 7834403
    Abstract: This document discusses, among other things, apparatus having at least one CMOS transistor overlying a substrate; and at least one finned bipolar transistor overlying the substrate and methods for making the apparatus.
    Type: Grant
    Filed: August 13, 2007
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventors: Ronald Kakoschke, Klaus Schrüfer
  • Semiconductor device with ESD protection
    Patent number: 7835121
    Abstract: Semiconductor device having an amplifier. In one embodiment, the amplifier includes a first amplifier path including a first input and a second amplifier path including a second input. An inductance having a connectable node is connected between the first and second inputs, the connectable node being symmetrically connected between the first and second inputs. At least one ESD protection structure is connected to the connectable node. In one embodiment, the semiconductor device is used in a communications device.
    Type: Grant
    Filed: April 27, 2007
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventors: Marc Tiebout, Koen Mertens
  • Common mode control circuitry for multi-stage operational amplifiers
    Patent number: 7834696
    Abstract: This disclosure relates to a common mode regulation in multi stage differential amplifiers.
    Type: Grant
    Filed: April 4, 2008
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventors: Dario Giotta, Richard Gaggl, Ivonne Di Sancarlo, Andrea Baschirotto
  • Sampling error reduction in PWM-MASH converters
    Patent number: 7834789
    Abstract: Techniques for reducing sampling error in electronic components are described herein.
    Type: Grant
    Filed: April 6, 2009
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventors: Dietmar Straeussnigg, Luis Hernandez, Daniel Mark, Andreas Wiesbauer
  • Circuit arrangement for overtemperature detection
    Patent number: 7835129
    Abstract: The invention relates to a circuit arrangement for detecting the overtemperature of a semiconductor body. The arrangement comprises at least one field effect transistor, having a parasitic diode, which is integrated in the semiconductor body, wherein the parasitic diode connects a load terminal of the field effect transistor to a bulk terminal of the semiconductor body, and comprising an evaluating unit electrically connected to the parasitic diode via the bulk terminal at the semiconductor body, which is constructed for feeding a current into the parasitic diode and evaluating a temperature-dependent voltage drop across the parasitic diode, the direction of the current fed into the diode being such that it is operated in the forward direction.
    Type: Grant
    Filed: March 29, 2007
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventor: Steffen Thiele
  • SIGNALING DEVICE FOR CIRCUIT BREAKER AND ELECTRICAL APPARATUS COMPRISING THE SIGNALING DEVICE
    Publication number: 20100282583
    Abstract: A signaling device having an electrical switch configured to generate an electrical signal indicating a transition of an associated circuit breaker from a first state to a second state. A movable body is pivotally mounted around a first axis (101) so as to interact with the actuating mechanism. A return spring is operatively connected to the pivoting body (3) and is mounted around an axis substantially parallel to said first axis.
    Type: Application
    Filed: May 5, 2010
    Publication date: November 11, 2010
    Applicant: ABB Technology AG
    Inventors: Annunzio Regantini, Stefano Mussetti
  • Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element
    Patent number: 7829450
    Abstract: In a method of processing a contact pad, a passivation layer stack including at least one passivation layer is formed on at least an upper surface of a contact pad region. A first portion of the passivation layer stack is removed from above the contact pad region, wherein a second portion of the passivation layer remains on the contact pad region and covers the contact pad region. An adhesion layer is formed on the passivation layer stack. The adhesion layer is patterned, wherein the adhesion layer is removed from above the contact pad region. Furthermore, the second portion of the passivation layer stack is removed.
    Type: Grant
    Filed: November 7, 2007
    Date of Patent: November 9, 2010
    Assignee: Infineon Technologies AG
    Inventors: Markus Hammer, Guenther Ruhl, Andreas Strasser, Michael Melzl, Reinhard Goellner, Doerthe Groteloh
  • Modulator arrangement and method for signal modulation
    Patent number: 7830220
    Abstract: A modulator arrangement includes a power amplifier which receives a carrier signal and has a current control input and a voltage supply input. The modulator arrangement further includes a supply voltage modulator having an output coupled to the voltage supply input and an input coupled to the data input and a bias current modulator with an output coupled to the current control input and an input coupled to the data input. A control unit is provided which has a power control output coupled to the supply voltage modulator and to the bias current modulator to control the supply voltage modulator and the bias current modulator depending on a power control signal.
    Type: Grant
    Filed: September 26, 2006
    Date of Patent: November 9, 2010
    Assignee: Infineon Technologies AG
    Inventors: Nazim Ceylan, Jan-Erik Müller
  • Logic gate
    Patent number: 7830170
    Abstract: A logic gate comprises a first switch, a second switch, a data network and a keeping circuitry. The first switch is adapted to connect a logic node to a first potential responsive to a transition of an enabling signal. The second switch is adapted to connect the logic node to a second potential via an electrical path responsive to a transition of the enabling signal. The data network is serially connected within the electrical path. The keeping circuitry comprises third and fourth switches serially connected between the logic node and the first potential and being controllable separately from each other, the third switch being adapted to be closed in case a potential on the logic node assumes the first potential and to be opened in case the potential on the logic node assumes the second potential.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: November 9, 2010
    Assignee: Infineon Technologies AG
    Inventors: Thomas Kuenemund, Artur Wroblewski
  • Semiconductor package
    Patent number: 7830022
    Abstract: A semiconductor package is disclosed. One embodiment provides a semiconductor package singulated from a wafer includes a chip defining an active surface, a back side opposite the active surface, and peripheral sides extending between the active surface and the back side; a contact pad disposed on the active surface; and a metallization layer extending from the contact pad onto a portion of the peripheral sides of the chip.
    Type: Grant
    Filed: October 22, 2007
    Date of Patent: November 9, 2010
    Assignee: Infineon Technologies AG
    Inventors: Horst Theuss, Adolf Koller
  • Radio-frequency IC for a mobile radio transmitter
    Patent number: 7831224
    Abstract: A radio-frequency IC (3) for a mobile radio transmitter (1) has an analogue/digital converter unit (5) for digitizing baseband signals (AB), a recovery unit (6, 7, 8, 9, 10) for recovering determined data information (Rot, TxSymbPhase) on which the baseband signals (AB) are based, a digital/analogue converter unit (11) and a frequency converter unit for producing transmitted signals on the basis of the signals produced by the digital/analogue converter unit (11).
    Type: Grant
    Filed: April 27, 2006
    Date of Patent: November 9, 2010
    Assignee: Infineon Technologies AG
    Inventors: Burkhard Neurauter, Guenter Maerzinger, Clemens Troebinger, Thorsten Tracht