Abstract: A capacitive micromachined ultrasonic transducer (CMUT), which has a conductive structure that can vibrate over a cavity, has a number of vent holes that are formed in the bottom surface of the cavity. The vent holes eliminate the deflection of the CMUT membrane due to atmospheric pressure which, in turn, allows the CMUT to receive and transmit low frequency ultrasonic waves.

Abstract: A device has a microelectromechanical system (MEMS) component with at least one surface and a coating disposed on at least a portion of the surface. The coating has a compound of the formula M(CnF2n+1Or), wherein M is a polar head group and wherein n?2r. The value of n may range from 2 to about 20, and the value of r may range from 1 to about 10. The value of n plus r may range from 3 to about 30, and a ratio of n:r may have a value of about 2:1 to about 20:1.

Abstract: Oscillator circuitry having a switching inverting amplifier arranged in a ring oscillator configuration of at least two stages. A bias generator for supplying the amplifiers of neighboring stages, is responsive to an enable signal to supply the amplifiers only when the enable signal is asserted. A first pair of transistors, coupled to an input of one of the amplifiers and the other coupled to an output of the amplifier, the transistors being driven in common by the enable signal such that when the enable signal is deasserted the transistors of the pair are turned on to impose conflicting levels at the input and the output such that the amplifier is forced to switch.

Abstract: A glitch free clock switching circuit includes a first enable synchronization logic that generates a first clock enable in response to a first enable from a first enable generation logic. The clock switching circuit includes a second enable synchronization logic that generates a second clock enable in response to a second enable from a second enable generation logic. A logic gate is coupled to an output of the second enable synchronization logic that selects the second clock signal as a logic gate output if the second enable is logic high. A priority multiplexer receives a first clock signal, the first enable and the logic gate output. The multiplexer configured to select the first clock signal as the clock output if the first enable is logic high, irrespective of the logic gate output.

Abstract: An identification address of a sensor interface device is configured in response to the order of connection of first (DXP1) and second (DXN1) package pins to electrodes of a sensor (Q0). A sensor signal processing circuit (23) has first and second inputs coupled through the first and second pins to the sensor for converting a parameter sensed by the sensor to a different representation. A current is forced through the first pin to produce either a high or low voltage on the first pin depending on the order of connection of the first and second pins to the electrodes of the sensor. A voltage on the first pin is compared with a reference voltage to produce a comparison signal which is mapped to produce the identification address.

Abstract: A first depth map is generated in response to a first stereoscopic image from a camera. The first depth map includes first pixels having valid depths and second pixels having invalid depths. A second depth map is generated in response to a second stereoscopic image from the camera. The second depth map includes third pixels having valid depths and fourth pixels having invalid depths. A first segmentation mask is generated in response to the first pixels and the third pixels. A second segmentation mask is generated in response to the second pixels and the fourth pixels. In response to the first and second segmentation masks, a determination is made of whether the second stereoscopic image includes a change in comparison to the first stereoscopic image.

Abstract: Conventional “on-chip” or monolithically integrated thermocouples are very mechanically sensitive and are expensive to manufacture. Here, however, thermocouples are provided that employ different thicknesses of thermal insulators to help create thermal differentials within an integrated circuit. By using these thermal insulators, standard manufacturing processes can be used to lower cost, and the mechanical sensitivity of the thermocouple is greatly decreased. Additionally, other features (which can be included through the use of standard manufacturing processes) to help trap and dissipate heat appropriately.

Abstract: A processor includes a shift device for extending the width of a rotator without increasing propagation delays. An extended-width result is obtained by combining a rotation result with a shift result in accordance with a mask that is selected in response to at least a portion of the value of the degree to which a data word is to be shifted.

Abstract: A method and system for performing dynamic instrumentation. At least some of the illustrative embodiments are methods comprising setting at least one monitor value (wherein the at least one monitor value is associated with a software monitoring handler), detecting a value within a register equal to the at least one monitor value, and executing the software monitoring handler based on the detecting.

Abstract: A complementary metal-oxide-semiconductor (CMOS) integrated circuit structure, and method of fabricating the same according to a replacement metal gate process. P-channel and n-channel MOS transistors are formed with high-k gate dielectric material that differ from one another in composition or thickness, and with interface dielectric material that differ from one another in composition or thickness. The described replacement gate process enables construction so that neither of the p-channel or n-channel transistor gate structures includes the metal gate material from the other transistor, thus facilitating reliable filling of the gate structures with fill metal.

Abstract: A metal oxide semiconductor field effect transistor (MOSFET) in and on a semiconductor surface provides a drift region of a first conductivity type. A plurality of active area trenches in the drift region, and first and second termination trenches are each parallel to and together sandwiching the active area trenches. The active area trenches and termination trenches include a trench dielectric liner and electrically conductive filler material filled field plates. A gate is over the drain drift region between active area trenches. A body region of a second conductivity abuts the active region trenches. A source of the first conductivity type is in the body region on opposing sides of the gate. A vertical drain drift region uses the drift region below the body region. A first and second curved trench feature couples the field plate of the first and second termination trench to field plates of active area trenches.

Abstract: A semiconductor package includes a metallic leadframe having a plurality of cantilever leads, a mounting area for mounting a die, and one or more non-conductive supports adjacent to a recessed surface of the cantilever leads to support the leads during die mount, wire bond, and encapsulation processes. Encapsulant encapsulates and supports at least a portion of the die, the leadframe.

Abstract: In an embodiment of the invention, a flip-flop circuit contains a 2-input multiplexer, a master latch, a transfer gate and a slave latch. The scan enable control signals SE and SEN of the multiplexer determine whether data or scan data is input to the master latch. The clock signals CLK and CLKN and retention control signals RET and RETN determine when the master latch is latched. The slave latch is configured to receive the output of the master latch, a second data bit D2, the clock signals CLK and CLN, the retain control signals RET and RETN, the slave control signals SS and SSN. The signals CLK, CLKN, RET, RETN, SS and SSN determine whether the output of the master latch or the second data bit D2 is latched in the slave latch. Control signals RET and RETN determine when data is stored in the slave latch during retention mode.

Abstract: A method of fabricating a semiconductor device includes forming at least one trench from a top side of a semiconductor layer, wherein the trench is lined with a trench dielectric liner and filled by a first polysilicon layer. The surface of the trench dielectric liner is etched, wherein dips in the trench dielectric liner are formed relative to a top surface of the first polysilicon layer which results in forming a protrusion including the first polysilicon layer. The first polysilicon layer is etched to remove at least a portion of the protrusion. A second dielectric layer is formed over at least the trench after etching the first polysilicon layer. A second polysilicon layer is deposited. The second polysilicon layer is etched to remove it over the trench and provide a patterned second polysilicon layer on the top side of the semiconductor layer.

Abstract: A wafer clamp assembly for holding a wafer during a deposition process comprises an outer annular member defining a central recess that has a diameter slightly greater than the diameter of the wafer. A plurality of finger members are carried by the outer annular member and extend radially inwardly from the outer annular member into the central recess, wherein each of the finger members has a free end for contacting the wafer during the deposition process.

Abstract: A MEMS may integrate movable MEMS parts, such as mechanical elements, flexible membranes, and sensors, with the low-cost device package, leaving the electronics and signal-processing parts in the integrated circuitry of the semiconductor chip. The package may be a leadframe-based plastic molded body having an opening through the thickness of the body. The movable part may be anchored in the body and extend at least partially across the opening. The chip may be flip-assembled to the leads to span across the foil, and may be separated from the foil by a gap. The leadframe may be a prefabricated piece part, or may be fabricated in a process flow with metal deposition on a sacrificial carrier and patterning of the metal layer. The resulting leadframe may be flat or may have an offset structure useful for stacked package-on-package devices.

Abstract: Testing of an electrical device is achieved by providing a test access mechanism within the device that can receive scan frames from an external tester. The received scan frames contain stimulus data to be applied to circuitry within the device to be tested, a command for enabling a test control operation, and a frame marker bit to indicate the end of the scan frame pattern. The inputting of scan frames can occur continuously and simultaneous with a commanded test control operation.

Abstract: A built-in self-test (BIST) diagnostic system tests the execution of a processor. The processor is arranged to execute a normal application for controlling a process that is external to the processor. The normal execution is executed in normal execution timeslots that have idle timeslots that are interspersed in time between the normal execution timeslots. A BIST controller is arranged to detect the presence of an idle timeslot in the execution of the processor and to use a scan chain to scan-in a first test pattern for a test application for testing the processor. The first test pattern is executed by the processor during the detected idle timeslot and a first result pattern generated by the execution of the first test pattern is scanned-out. The scanned-out first test pattern is evaluated to determine the presence of an error. The first test pattern application is conditionally interruptible.

Abstract: A method for allocating resources for a scheduling request indicator (SRI) is disclosed. An SRI cycle period for use by user equipment (UE) within a cell is transmitted from a NodeB in a cell to UE within the cell. The NodeB transmits a specific SRI subframe offset and an index value to the particular UE within the cell. The specific SRI subframe offset and the index value enable the UE to determine a unique combination of cyclic shift, RS orthogonal cover, data orthogonal cover, and resource block number for the UE to use as a unique physical resource for an SRI in the physical uplink control channel (PUCCH).

Abstract: A wireless receiver scan circuit (10) including a low-IF de-rotator (210) with signal band and image band outputs, and search circuitry (80, 200) operable to parallelize (100) a frequency-scanning search by determination of the presence and absence of a transmission in both the signal band and the image band. Other circuits, systems and processes are also disclosed.