Abstract: Integrated circuits and manufacturing methods are presented for creating diffusion resistors (101, 103) in which the diffusion resistor well is spaced from oppositely doped wells to mitigate diffusion resistor well depletion under high biasing so as to provide reduced voltage coefficient of resistivity and increased breakdown voltage for high-voltage applications.

Abstract: A graphical object is displayed on a display screen of a student device. The student device may then display one or more data elements pertaining to the graphical object on a display screen of the student device. An expression entered by the student may then be displayed on the display screen of the student device. Variables in the expression may be determined by parsing the expression. A sequence of prompts is presented by the student device to associate each of the variables of the expression with one of the data elements. In response to each prompt, a data element is selected and associated with a variable in response to user input to the student device.

Abstract: A method includes detecting removal or depletion of a power supply associated with a powered device. The powered device is configured to receive power from a power adapter via a narrow-voltage direct current/direct current (NVDC) charger and from the power supply. The method also includes, in response to the detection, disabling a dynamic power management function of the NVDC charger. The method further includes monitoring input current or input power provided to the powered device by the NVDC charger and determining if the input current or input power exceeds a threshold. In addition, the method includes, if the input current or input power exceeds the threshold, triggering a throttling of an operating clock frequency of the powered device. The method could also include (i) disabling a specified mode of operation and turning on a voltage regulator of the NVDC charger in response to the detection and (ii) providing over-voltage protection.

Abstract: Deposition of lead-zirconium-titanate (PZT) ferroelectric material over iridium metal, in the formation of a ferroelectric capacitor in an integrated circuit. The capacitor is formed by the deposition of a lower conductive plate layer having iridium metal as a top layer. The surface of the iridium metal is thermally oxidized, prior to or during the deposition of the PZT material. The resulting iridium oxide at the surface of the iridium metal is very thin, on the order of a few nanometers, which allows the deposited PZT to nucleate according to the crystalline structure of the iridium metal rather than that of iridium oxide. The iridium oxide is also of intermediate stoichiometry (IrO2-x), and reacts with the PZT material being deposited.

Abstract: The present invention provides a receiver. In one embodiment, the receiver includes a receive portion employing transmission signals from a transmitter having multiple antennas and capable of providing channel estimates. The receiver also includes a feedback generator portion configured to provide to the transmitter a pre-coder selection for data transmission that is based on the channel estimates, wherein the pre-coder selection corresponds to a grouping of frequency-domain resource blocks. The present invention also provides a transmitter having multiple antennas. In one embodiment, the transmitter includes a transmit portion coupled to the multiple antennas and capable of applying pre-coding to a data transmission for a receiver. The transmitter also includes a feedback decoding portion configured to decode a pre-coder selection for the data transmission that is fed back from the receiver, wherein the pre-coder selection corresponds to a grouping of frequency-domain resource blocks.

Abstract: Multi-step deposition of lead-zirconium-titanate (PZT) ferroelectric material. An initial portion of the PZT material is deposited by metalorganic chemical vapor deposition (MOCVD) at a low deposition rate, for example at a temperature below about 640 deg C. from vaporized liquid precursors of lead, zirconium, and titanium, and a solvent at a collective flow rate below about 1.1 ml/min, in combination with an oxidizing gas. Following deposition of the PZT material at the low flow rate, the remainder of the PZT film is deposited at a high deposition rate, attained by changing one or more of precursor and solvent flow rate, oxygen concentration in the oxidizing gas, A/B ratio of the precursors, temperature, and the like.

Abstract: A method of manufacturing semiconductor circuits seeks timing closure on a preliminarily select, placed and routed set of cells using a delay for each cell as derated by a derate value obtained from a timing model table having a derate value corresponding to a circuit path depth in the netlist. The derate value for a predetermined number of circuit path depths below k are identical. The derate values are monotonically decreasing for increasing circuit depths in a range between 1.0 and 1.5. Separate timing model tables with differing identical values can be employed for standard and clock tree cells.

Abstract: An active-FET ESD cell (300) for protecting an I/O pad (301) includes a first MOS transistor (310) with a gate oxide (315) of a first thickness and a second MOS transistor (320) with a gate oxide (325) of a second thickness greater than the first thickness at least by the amount required to handle the source-follower threshold voltage, the first transistor having its drain (313) tied to the I/O pad, its source (311) tied to ground, and its gate (312) tied to the source (321) of the second transistor and resistively connected to ground (340), and the second transistor having its drain (323) tied to the I/O pad and its gate tied to a capacitor (330) connected to the I/O pad and to a resistor (331) connected to ground.

Abstract: A memory management and protection system that manages memory access requests from a number of requestors. Memory accesses are allowed or disallowed based on the privilege level of the requestor, based on a Privilege Identifier that accompanies each memory access request. An extended memory controller selects the appropriate set of segment registers based on the Privilege Identifier to insure that the request is compared to and translated by the segment register associated with the requestor originating the request. A set of mapping registers allow flexible mapping of each Privilege Identifier to the appropriate access permission. The segment registers translate the logical address from the requestor to a physical address within a larger address space.

Abstract: An electronic device comprising a semiconductor structure having an integrated circuit back end capacitor and an integrated circuit back end thin film resistor and a method of manufacturing the same is provided. The semiconductor structure comprises a first dielectric layer, a bottom plate of the capacitor and a thin film resistor body. Furthermore, there is a second dielectric layer which is disposed on the bottom plate of the capacitor and on top of the thin film resistor body. A top plate of the capacitor is disposed on the second dielectric layer in a region of the second dielectric layer which is defined by the lateral dimensions of the bottom plate of the capacitor. The bottom plate and the resistor body are laterally spaced apart layers which are both disposed on the first dielectric layer and which are composed of a same thin film material.

Abstract: Embodiments of the invention provide a pulsed signal detection system with reduced noise bandwidth in the frontend. Analog to digital conversion speed is decoupled from the pulsed duty cycle timing. This in turn reduces the power consumption of the ADC and the front end while providing a high dynamic range. The ADC may be a continuous time sigma delta converter to reduce the drive requirements of the front end.

Abstract: An electronic circuit for use with time of arrival signals from a network, including a position determination unit, a first clock, a second clock, and processing circuitry coupled to said first clock, said second clock, and said position determination unit. The processing circuitry is operable to project a relatively-accurate subsequent global time based on said first and second clocks and to then return said relatively-accurate subsequent global time to said position determination unit to facilitate a subsequent position determination by said position determination unit.

Abstract: In an embodiment of the invention, a flip-flop circuit contains a 2-input multiplexer, a master latch, a transfer gate and a slave latch. The scan enable control signals SE and SEN of the multiplexer determine whether data or scan data is input to the master latch. Clock signals CKT and CLKZ and retention control signals RET and RETN determine when the master latch is latched. The slave latch is configured to receive the output of the master latch, a second data bit D2, the clock signals CKT and CLN, the retain control signals RET and RETN, the slave control signals SS and SSN. The signals CKT, CLKZ, RET, RETN, SS, SSN and PREN determine whether the output of the master latch or the second data bit D2 is latched in the slave latch. Control signals RET and RETN determine when data is stored in the slave latch during retention mode.

Abstract: A content-adaptive edge and detail enhancement method is described for image/video processing. Both 2D peaking and LTI/CTI are used in sharpening pictures. Image analysis is performed to generate a mask to control the use of the two peaking techniques. The strength or likelihood of edges or transitions is measured and such a strength or likelihood measurement will be transformed into a blending factor controlling the blending of the LTI/CTI and peaking outputs.

Abstract: Semiconductor devices and fabrication methods are provided, in which fully silicided gates are provided. A lanthanide series metal is implanted into the gate electrode layer prior to silicidation and diffuses into the gate dielectric during an activation anneal. This process and resultant structure provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting transistor.

Abstract: A method of computational lithography includes collecting a critical dimension (CD) data set including CD data from printing a test structure including a set of gratings which provide a plurality of feature types including different ratios of line width to space width, where the printing includes a range of different focus values. The CD data is weighted to form a weighted CD data set using a weighting algorithm (WA) that assigns cost weights to the CD data based its feature type and its magnitude of CD variation with respect to a CD value for its feature type at a nominal focus (nominal CD). The WA algorithm reduces a value of the cost weight as the magnitude of variation increases. At least one imaging parameter is extracted from the weighted CD data set. A computational lithography model is automatically calibrated using the imaging parameter(s).

Abstract: An embodiment of the invention provides a method of reducing a drop in voltage on a pre-biased output of a DC-DC step-down switching converter. A high side switch is activated to conduct a first current to the pre-biased output. After the high side switch is activated, a low side switch is activated to draw a second current from the pre-biased output such that the magnitude of the first current is greater than the magnitude of the second current for at least a portion of a time period T1. After the time period T1 ends, the magnitudes of the first and second currents are changed to maintain a predetermined voltage on the pre-biased output.

Abstract: A wireless receiver (10) includes a down converter module (210) operable to deliver a signal having a signal bandwidth that changes over time, a dynamically controllable filter module (200) having a filter bandwidth and fed by said down converter module (210), and a measurement module (295) operable to at least approximately measure the signal bandwidth, said dynamically controllable filter module (200) responsive to said measurement module (295) to dynamically adjust the filter bandwidth to more nearly match the signal bandwidth as it changes over time, whereby output from said filter module (200) is noise-reduced. Other wireless receivers, electronic circuits, and processes for their operation are disclosed.

Abstract: The present invention provides a method for forming a semiconductor device, as well as a semiconductor device. The method for manufacturing a semiconductor device, among others, includes providing a gate structure (240) over a substrate (210), the gate structure (240) including a gate electrode (248) located over a nitrided gate dielectric (243), and forming a nitrided region (310) over a sidewall of the nitrided gate dielectric (243).

Abstract: A method of dynamically calculating and updating the Volterra kernels used by the Digital Pre Distortion engine based on output power, input signal bandwidth, multicarrier configuration, frequency response and power amplifier temperature. A dominant Volterra kernels searching DSP engine based on innovation bases with minimum RMS error selection is implemented to continuously update the Volterra kernels set used in DPD to model the power amplifier non linear behaviors.