Abstract: Electronic device comprising an electronic circuit and an ESD protection circuit is provided. The ESD protection circuit comprises a first and a second protection stage, wherein the second protection stage comprises at least one high side CMOS-transistor and a low side CMOS-transistor acting as power dissipating rail clamps. The at least one high side CMOS-transistor and the low side CMOS-transistor are coupled so as to provide an anti-series connection of Zener diodes between a node of the electronic device and a supply voltage rail. Further, the high side CMOS-transistors and the low side CMOS-transistor are complementary CMOS-transistors.

Abstract: In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by substituting one or more n+ source regions with Schottky diodes.

Abstract: An integrated circuit with a high precision MIM capacitor and a high precision resistor with via etch stop landing pads on the resistor heads that are formed with the capacitor bottom plate material. A process of forming an integrated circuit with a high precision MIM capacitor and a high precision resistor where via etch stop landing pads over the resistor heads are formed using the same layer that is used to form the capacitor bottom plate.

Abstract: An apparatus is provided. Physical medium dependent (PMD) sublayer logic is configured to communicate with a communications medium. Physical medium attachment (PMA) sublayer logic is coupled to the PMD logic. Forward error correction (FEC) sublayer logic is coupled to the PMA sublayer logic, and physical coding (PCS) sublayer logic is configured to communicate with an interface. A transmit path is coupled to the transmit data in a second clock domain to the FEC sublayer logic. A first read pointer circuit is coupled to transmit path. A write pointer circuit is coupled to the transmit path. A receive path is coupled to receive data in the second clock domain from the FEC sublayer logic. A second read pointer circuit is coupled to the receive path, where the first read pointer circuit, the second read pointer circuit, and the write pointer circuits are each configured to detect gaps between the first and second clock domains.

Abstract: An apparatus for, and method of, increasing compensation sequence storage density in a projection visual display system and a projection visual display system incorporating the apparatus or the method. In one embodiment, the apparatus includes: (1) a memory containing a first compensation sequence portion that is common to a plurality of effective transmission factors and a plurality of second compensation sequence portions that are unique to a corresponding plurality of effective transmission factors and (2) a compensation sequence generator coupled to the memory and configured to construct a compensation sequence for use in the projection visual display system using the first compensation sequence portion and one of the plurality of second compensation sequence portions selected as a function of a particular effective transmission factor.

Abstract: One embodiment of the present invention relates to a photolithography mask configured to form a metallization and via level utilizing a single lithography and etch process. More particularly, a photolithography mask comprising a mask via shape and one or more metal wire shapes is configured to produce both on-wafer metal lines and via levels. The mask via shape corresponds to an on-wafer photoresist via opening having a first critical dimension (CD). The one or more mask wire shapes correspond to one or more on-wafer photoresist wire openings respectively having a second CD. The first CD is larger than the second CD thereby providing a greater vertical etch rate for ILD exposed by the photoresist via opening than for ILD exposed by the one or more photoresist wire openings. This difference in CD results in a via extending vertically below the metal wire level, thereby making physical contact with underlying metal.

Abstract: A power MOSFET is formed in a semiconductor device with a parallel combination of a shunt resistor and a diode-connected MOSFET between a gate input node of the semiconductor device and a gate of the power MOSFET. A gate of the diode-connected MOSFET is connected to the gate of the power MOSFET. Source and drain nodes of the diode-connected MOSFET are connected to a source node of the power MOSFET through diodes. The drain node of the diode-connected MOSFET is connected to the gate input node of the semiconductor device. The source node of the diode-connected MOSFET is connected to the gate of the power MOSFET. The power MOSFET and the diode-connected MOSFET are integrated into the substrate of the semiconductor device so that the diode-connected MOSFET source and drain nodes are electrically isolated from the power MOSFET source node through a pn junction.

Abstract: A method of compressing an image data block is provided that includes computing a pixel residual for each pixel in the image data block except a non-residual pixel, computing a compression level for the image data block based on a minimum pixel residual value and a maximum pixel residual value of the pixel residuals, encoding a compression flag for the image data block, wherein the compression flag includes an indicator identifying the compression level and a first portion of bits from the non-residual pixel, and generating a compressed block comprising a second portion of bits from the non-residual pixel and the pixel residuals encoded using fixed length coding based on the compression level.

Abstract: Systems and Methods for task allocation in a multiprocessor environment employing power management techniques are described wherein tasks are allocated relative to the density given by the ratio of worst-case-execution time and deadline of a task and also the harmonicity of a task's period with respect to a task-set. Tasks are allocated to a given processor based on either minimum density or maximum harmonicity depending on which allocation results in a lower clock frequency. Assigning a task to the processor with lowest density results in balancing the density across processors while assigning task to the processor with maximum harmonicity attempts to maximize the utilization of the processor.

Abstract: The disclosure describes a novel method and apparatus for improving interposers that connected stacked die assemblies to system substrates. The improvement includes the addition of IEEE 1149.1 circuitry within interposers to allow simplifying interconnect testing of digital and analog signal connections between the interposer and system substrate it is attached too. The improvement also includes the additional 1149.1 controlled circuitry that allows real time monitoring of voltage supply and ground buses in the interposer. The improvement also includes the additional of 1149.1 controlled circuitry that allows real time monitoring of functional digital and analog input and output signals in the interposer. The improvement also provides the ability to selectively serially link the 1149.1 circuitry in the interposer with 1149.1 circuitry in the die of the stack.

Abstract: Scan architectures are commonly used to test digital circuitry in integrated circuits. The present invention describes a method of adapting conventional scan architectures into a low power scan architecture. The low power scan architecture maintains the test time of conventional scan architectures, while requiring significantly less operational power than conventional scan architectures. The low power scan architecture is advantageous to IC/die manufacturers since it allows a larger number of circuits (such as DSP or CPU core circuits) embedded in an IC/die to be tested in parallel without consuming too much power within the IC/die. Since the low power scan architecture reduces test power consumption, it is possible to simultaneously test more die on a wafer than previously possible using conventional scan architectures. This allows wafer test times to be reduced which reduces the manufacturing cost of each die on the wafer.

Abstract: A CMOS device having an NMOS transistor with a metal gate electrode comprising a mid-gap metal with a low work function/high oxygen affinity cap and a PMOS transistor with a metal gate electrode comprising a mid gap metal with a high work function/low oxygen affinity cap and method of forming.

Abstract: A method for driving a piezoelectric transducer is provided. An input signal is received. At least one of a plurality of modes is selected for a buck-boost stage from a comparison of a desired voltage on a capacitor to a first threshold and a second threshold, where the desired voltage is determined from the input signal. The piezoelectric transducer is then driven substantially within the audio band using the desired voltage on the capacitor using an H-bridge that changes state with each zero-crossing.

Abstract: An output stage (1-2) includes a gain circuit (Q1,Q2) for driving a base of a main transistor (Q3) having a collector coupled to an output (18) in response to an input signal V11) which also controls a base of an auxiliary transistor (Q7) having a collector coupled to the output. A clamping transistor (Q6) has a control electrode coupled to the base of the auxiliary transistor, a first electrode coupled to the output, and a second electrode coupled to provide feedback from the output via the gain circuit to the base of the main transistor and to provide feedback from the output to the base of the auxiliary transistor. When the auxiliary transistor goes into deep saturation it causes the clamping transistor to provide negative feedback from the output to the main output stage so as to prevent the main transistor from going into deep saturation.

Abstract: Systems and methods for providing a battery module 110 with secure identity information and authentication of the identity of the battery 110 by a host 120. In one embodiment, the system for providing a battery module with secure identity information includes: (1) a tamper resistant processing environment 200 located within the battery module 110 and (2) a key generator configured to generate a key based on an identity of the battery module 110 and cause the key to be stored within the tamper resistant processing environment 200.

Abstract: A method of fabricating an integrated circuit including bipolar transistors that reduces the effects of transistor performance degradation and transistor mismatch caused by charging during plasma etch, and the integrated circuit so formed. A fluorine implant is performed at those locations at which isolation dielectric structures between base and emitter are to be formed, prior to formation of the isolation dielectric. The isolation dielectric structures may be formed by either shallow trench isolation, in which the fluorine implant is performed after trench etch, or LOCOS oxidation, in which the fluorine implant is performed prior to thermal oxidation. The fluorine implant may be normal to the device surface or at an angle from the normal. Completion of the integrated circuit is then carried out, including the use of relatively thick copper metallization requiring plasma etch.

Abstract: An insulated-gate field-effect transistor (220U) utilizes an empty-well region for achieving high performance. The concentration of the body dopant reaches a maximum at a subsurface location no more than 10 times deeper below the upper semiconductor surface than the depth of one of a pair of source/drain zones (262 and 264), decreases by at least a factor of 10 in moving from the subsurface location along a selected vertical line (136U) through that source/drain zone to the upper semiconductor surface, and has a logarithm that decreases substantially monotonically and substantially inflectionlessly in moving from the subsurface location along the vertical line to that source/drain zone. Each source/drain zone has a main portion (262M or 264M) and a more lightly doped lateral extension (262E or 264E). Alternatively or additionally, a more heavily doped pocket portion (280) of the body material extends along one of the source/drain zones.

Abstract: A system comprises a gyroscope configured to produce a gyroscope signal, an accelerometer configured to produce an accelerometer signal, and a filter unit coupled to the gyroscope and having a configurable bandwidth. The filter unit configured to filter the gyroscope signal. The system also comprises control logic that is configured to alter the bandwidth of the filter unit based on the accelerometer signal.

Abstract: An inertial sensor (16) includes a differential thermocouple (13) including first (4A) and second (4B) metal traces, a poly trace (6) with a first end connected to a first end of the first metal trace to form a first (?) thermocouple junction and a second end connected to a first end of the second metal trace to form a second (+) thermocouple junction. A gas mass (10) located symmetrically with respect to the thermocouple junctions is heated by a heater (8). Acceleration or tilting of the sensor shifts the relative location of the gas mass relative to the thermocouple junctions, causing differential heating thereof and generation of a corresponding thermocouple output signal.

Abstract: Electrical device structures constructed in an isolated p-well that is wholly contained within a core n-well. Methods of forming electrical devices within an isolated p-well that is wholly contained within a core n-well using a baseline CMOS process flow.