Abstract: An inertial sensor (16) includes a differential thermocouple (13) including first (4A) and second (4B) metal traces, a poly trace (6) with a first end connected to a first end of the first metal trace to form a first (?) thermocouple junction and a second end connected to a first end of the second metal trace to form a second (+) thermocouple junction. A gas mass (10) located symmetrically with respect to the thermocouple junctions is heated by a heater (8). Acceleration or tilting of the sensor shifts the relative location of the gas mass relative to the thermocouple junctions, causing differential heating thereof and generation of a corresponding thermocouple output signal.

Abstract: An integrated circuit containing a field controlled diode which includes a p-type channel region between an upper gate and a lower n-type depletion gate, a p-type anode in a p-type anode well abutting the channel region, and an n-type cathode in a p-type anode well abutting the channel region opposite from the anode well. An n-type lower gate link connects the lower gate to the surface of the substrate. A surface control element is located at the surface of the channel region between the cathode and the upper gate. A process of forming the integrated circuit containing the field controlled diode is described.

Abstract: A wireless transceiver includes a receiver and a transmitter, the receiver and transmitter implemented to have multiple receive and transmit channels respectively, to provide multiple-input multiple-output (MIMO) capability. In an embodiment, the transceiver is implemented to include two transmit channels and two receive channels. Some blocks/circuitry of each of the receive and transmit channels are implemented with reduced area and current consumption, with a corresponding increase in noise. In a single-input single-output (SISO) mode of operation, the receiver combines the output of both the receive channels to compensate for the increase in noise due to the implementation with smaller area and lower current consumption. Similarly, the transmitter combines the output of both the transmit channels to compensate for the increase in noise. The transceiver operates with no signal degradation in SISO mode, and with a small degradation in signal quality in the MIMO mode.

Abstract: The present invention relates to apparatus and method for re-circulating high viscosity liquids. The apparatus comprises a recirculating probe coupled to a fluid storage and dispensing vessel by a connector, and the recirculating probe comprises: (a) a dip tube defining an output flow path; (b) an output port; (c) a recirculating port; and (d) a return flow path. The output flow path and the return flow path preferably have substantially equal cross-sectional areas, which reduce or eliminate the unbalance between the discharge pressure in the output line and that in the re-circulation line, and prevent premature wearing-out of the dispensing/recirculating pump.

Abstract: A system and method for measuring a temperature in at least one energy storage unit. They system includes at least one temperature sensor thermally coupled to the at least one energy storage unit, and a battery management controller in communication with the at least one temperature sensor. The battery management controller is configured to process a temperature of the at least one energy storage unit to obtain an internal temperature in the at least one energy storage unit.

Abstract: A process of forming an integrated circuit containing a bipolar transistor and an MOS transistor, by forming a base layer of the bipolar transistor using a non-selective epitaxial process so that the base layer has a single crystalline region on a collector active area and a polycrystalline region on adjacent field oxide, and concurrently implanting the MOS gate layer and the polycrystalline region of the base layer, so that the base-collector junction extends into the substrate less than one-third of the depth of the field oxide, and vertically cumulative doping density of the polycrystalline region of the base layer is between 80 percent and 125 percent of a vertically cumulative doping density of the MOS gate. An integrated circuit containing a bipolar transistor and an MOS transistor formed by the described process.

Abstract: Methods and devices for mapping logical addresses to physical locations on an integrated circuit die are disclosed herein. An embodiment of the method includes fabricating a die, where the die has a plurality of bits that are electrically accessible by way of logical addresses. A plurality of bits have known defects that form a predetermined fault pattern at a predetermined location on the die. The bits are tested by using the logical addresses, wherein the testing yields data as to the functionality of the bits. The test results are searched for the predetermined fault pattern. The physical locations of the defective bits constituting the predetermined fault pattern are correlated with their logical addresses based on the location of the predetermined fault pattern.

Abstract: Control events may be signaled to a target system having a plurality of components coupled to a scan path by using the clock and data signals of the scan path. While the clock signal is held a high logic level, two or more edge transitions are detected on the data signal. The number of edge transitions on the data signal is counted while the clock signal is held at the high logic state. A control event is determined based on the counted number of edge transitions on the data signal after the clock signal transitions to the low logic state.

Abstract: An optical disk drive system associated with a laser diode is described. The optical disk drive system comprises a current generator for receiving input signals; a current switch coupled to receive timing signals; a current driver coupled to receive output signals from the current switch and the current generator, the current driver further comprising a driver with wave shape control selected from the group consisting of a laser diode read driver and a laser diode write driver, wherein the driver with shape control is operative for transmitting at least one output signal that is a scaled version of at least one of the output signals received from the current generator, wherein the current driver is operative for transmitting at least one output signal driving the laser diode.

Abstract: This invention is a data processing system having a multi-level cache system. The multi-level cache system includes at least first level cache and a second level cache. Upon a cache miss in both the at least one first level cache and the second level cache the data processing system evicts and allocates a cache line within the second level cache. The data processing system determine from the miss address whether the request falls within a low half or a high half of the allocated cache line. The data processing system first requests data from external memory of the miss half cache line. Upon receipt data is supplied to the at least one first level cache and the CPU. The data processing system then requests data from external memory for the other half of the second level cache line.

Abstract: Displaying a stream of video data on a display device may be performed by decoding a portion of the video data to form a video frame. A queue time is determined when the video frame should be displayed. The queue time is adjusted by a margin time relative to a next display time to compensate for interrupt jitter, wherein the margin time is less than a period of time between periodic display time events and is larger than a specified interrupt jitter time. A software interrupt event is set to occur corresponding to the adjusted queue time. The video frame is queued in response to occurrence of the software interrupt. The queued video frame is transferred to a display buffer for the display device upon the occurrence of a next display time event after the occurrence of the software interrupt.

Abstract: An integrated circuit containing an SAR SRAM and CMOS logic, in which sidewall spacers on the gate extension of the SAR SRAM cell are thinner than sidewall spacers on the logic PMOS gates, so that the depth of the drain node SRAM PSD layer is maintained under the stretch contact. A process of forming an integrated circuit containing an SAR SRAM and CMOS logic, including selectively etch the sidewall spacers on the on the gate extension of the SAR SRAM cell, so that the depth of the drain node SRAM PSD layer is maintained under the stretch contact. A process of forming an integrated circuit containing an SAR SRAM and CMOS logic, including selectively implanting extra p-type dopants in the drain node SRAM PSD layer, so that the depth of the drain node SRAM PSD layer is maintained under the stretch contact.

Abstract: In at least some embodiments, a communication device includes a transceiver with a physical (PHY) layer. The PHY layer is configured for body area network (BAN) operations in a limited multipath environment using M-ary PSK, differential M-ary PSK or rotated differential M-ary PSK. Also, the PHY layer uses a constant symbol rate for BAN packet transmissions.

Abstract: An apparatus for comparing differential input signal inputs is provided. The apparatus comprises a CMOS sense amplifier (which has having a first input terminal, a second input terminal, a first output terminal, and a second output terminal), a first output circuit (which has a first load capacitance), a second output circuit (which has a second load capacitance), and an isolation circuit. The isolation circuit is coupled between the first output terminal of the CMOS sense amplifier and the first output circuit and is coupled between the second output terminal of the CMOS sense amplifier and the second output terminal of the CMOS sense amplifier. The isolation circuit isolates the first and second load capacitances from the CMOS sense amplifier.

Abstract: This invention relates to multi-core, multi-processing, factory multi-core and DSP multi-core. The nature of the invention is related to more optimal uses of a multi-core system to maximize utilization of the processor cores and minimize power use. The novel and inventive steps are focused on use of interrupts and prioritized interrupts, along with optional in-built methods, to allow systems to run more efficiently and with less effort on the part of the programmer.

Abstract: A touch screen system includes a capacitive touch screen (1) including a plurality of row conductors (7-1,2 . . . n) and a column conductor (5-1). A plurality of cotemporaneous orthogonal excitation signals (S1(t), S2(t) . . . Sn(t)) are simultaneously driven onto the row conductors, respectively. The capacitively coupled signals on the column conductor may be influenced by a touch (10) on the capacitive touch screen. Receiver circuitry (50) includes a sense amplifier (21-1) coupled to generate an amplifier output signal (r1(t)) in response to signals capacitively coupled onto the column conductor. WHT-based circuitry (35) determines amounts of signal contribution capacitively coupled by each of the excitation signals, respectively, to the amplifier output signal.

Abstract: The present invention facilitates semiconductor device fabrication and performance by providing a semiconductor device that can improve channel mobility for both N type and P type transistor devices. The semiconductor device of the present invention is fabricated on a semiconductor substrate 802 that has a first and second crystallographic orientation axes (e.g., <110>, <100>) 804 and 806. Source to drain channel regions for P type devices are formed 904 and aligned along the first crystallographic orientation axis. Source to drain channel regions for N type devices are formed 906 rotated from the channel regions of the P type devices by an offset angle so that the source to drain channel regions for the N type devices are aligned with the second crystallographic orientation axis.

Abstract: Test circuits located on semiconductor die enable a tester to test a plurality of die/ICs in parallel by inputting both stimulus and response patterns to the plurality of die/ICs. The response patterns from the tester are input to the test circuits along with the output response of the die/IC to be compared. Also disclosed is the use of a response signal encoding scheme whereby the tester transmits response test commands to the test circuits, using a single signal per test circuit, to perform: (1) a compare die/IC output against an expected logic high, (2) a compare die/IC output against an expected logic low, and (3) a mask compare operation. The use of the signal encoding scheme allows functional testing of die and ICs since all response test commands (i.e. 1-3 above) required at each die/IC output can be transmitted to each die/IC output using only a single tester signal connection per die/IC output. In addition to functional testing, scan testing of die and ICs is also possible.

Abstract: A process of generating design rules, OPC rules and optimizing illumination source models for an integrated circuit layout, to form short lines, terminated lines and crossovers between adjacent parallel route tracks, may include the steps of generating a set of template structures which use a set of characteristic design rules, and performing a plurality of source mask optimization (SMO) operations on the set of template structures with different values for the design rules in each SMO operation. In a first embodiment, the SMO operations are run using a predetermined set of values for each of the design rules, spanning a desired range of design rule values. In a second embodiment, the SMO operations are performed in a conditional iterative process in which values of the design rules are adjusted after each iteration based on results of the iteration.

Abstract: A method for generating a reset signal in a system on a chip (SoC) is disclosed. A sense signal is generated responsive to a supply voltage provided to the SoC. A reset signal is asserted while the sense signal is below a threshold voltage level. The sense signal may be forced below the threshold value for a period of time determined by a first capacitive time constant circuit. Operation of the first capacitive time constant circuit is inhibited after the sense signal has been above the threshold value level for a second period of time as determined by a second capacitive time constant circuit responsive to the supply voltage. In some embodiments, the first capacitive time constant circuit and the second capacitive time constant circuit may be discharged when the supply voltage falls below a second threshold voltage level, such that the reset signal is again asserted.