Abstract: Packets of real-time information are sent with a source rate greater than zero kilobits per second, and a time or path or combined time/path diversity rate initially being zero kilobits per second. This results in a quality of service QoS, optionally measured at the sender or the receiver. When the QoS is on an unacceptable side of a threshold of acceptability, the sender sends diversity packets at an increased rate. Increasing the diversity rate while either reducing or maintaining the overall transmission rate is new. CELP-based multiple-description data partitioning sends the base or important information plus a subset of fixed excitation in one packet and sends the base or important information plus the complementary subset of fixed excitation in another packet. Reconstruction produces acceptable quality when only one of the two packets is received and better quality when both packets are received. Reconstruction provides for single and multiple lost packets.

Abstract: A method of forming an IC including MOS transistors includes using a gate mask to form a first active gate feature having a line width W1 over an active area and a neighboring dummy feature having a line width 0.8 W1 to 1.3 W1. The neighboring dummy feature has a first side adjacent to the first active gate feature, and a nearest gate level feature on a second side opposite the first side. The neighboring dummy feature defines a gate pitch based on a distance to the first active gate feature or the neighboring dummy feature maintains a gate pitch in a gate array including the first active gate feature. The spacing between the neighboring dummy feature and the nearest gate level feature (i) maintains the gate pitch or (ii) provides a SRAF enabling distance that is ?2 times the gate pitch and the gate mask includes a SRAF over the SRAF distance.

Abstract: A process of selecting alternative test circuitry within an integrated circuit enables a test access port. Scan test instruction data is loaded into an instruction register of a test access port TAP, the instruction data including information for selecting the alternative test circuitry. An Update-IR instruction update operation is performed at the end of the loading to output scan test control signals from the instruction register. A lockout signal is changed to an active state to disable the test access port and enable scan test circuits.

Abstract: Scan distributor, collector, and controller circuitry connect to the functional inputs and outputs of core circuitry on integrated circuits to provide testing through those functional inputs and outputs. Multiplexer and demultiplexer circuits select between the scan circuitry and the functional inputs and outputs. The core circuitry can also be provided with built-in scan distributor, collector, and controller circuitry to avoid having to add it external of the core circuitry. With appropriately placed built-in scan distributor and collector circuits, connecting together the functional inputs and outputs of the core circuitry also connects together the scan distributor and collector circuitry in each core. This can provide a hierarchy of scan circuitry and reduce the need for separate test interconnects and multiplexers.

Abstract: A device test architecture and a reduced device test interface are provided to enable efficient testing of embedded cores and other circuits within devices. The reduced device test interface is achieved using a double data rate (DDR) signaling technique between the tester and the device. The DDR test interface allows the tester to interface to test circuits within the device, such as IEEE 1500 and/or IEEE 1149.1 test circuits, to provide high test data bandwidth to the test circuits using a minimum of test interface signals. The test architecture includes compare circuits that allow for comparison of test response data to be performed within the device. The test architecture further includes a memory for storing the results of the test response comparisons. The test architecture includes a programmable test controller to allow for various test control operations by simply inputting an instruction to the programmable test controller from the external tester.

Abstract: A quiet motor control system is described. This system digitally determines modulated voltages applied to motor phases in a manner that compensates for winding torque distortions, which reduces acoustic emissions.

Abstract: A Scan-BIST architecture is adapted into a low power Scan-BIST architecture. A generator 102, compactor 106, and controller 110 remain the same as in the known art. The changes between the known art Scan-BIST architecture and the low power Scan-BIST architecture involve modification of the known scan path into scan path 502, to insert scan paths A 506, B 508 and C 510, and the insertion of an adaptor circuit 504 in the control path 114 between controller 110 and scan path 502.

Abstract: A TAP linking module (21, 51) permits plural TAPs (TAPs 1-4) to be controlled and accessed from a test bus (13) via a single TAP interface (20).

Abstract: A method comprises a system comprising a host device coupled to a first remote device actively operating according to a state diagram that the host device and all remote devices follow during operation of the system. The method further comprises powering up a second remote device while the host device and first remote device are actively operating according to the state diagram. The second remote device waits for a synchronization point sequence. Upon detecting the synchronization point sequence, the second remote device implements a predetermined feature set and synchronizes itself to the state diagram at a common point as the host device and first remote device.

Abstract: A method is provided. An input signal is received, and a noise-shaped signal is generated from the input signal. The noise-shaped signal is formed from a plurality of noise-shaping levels. A pulse stream is generated from the noise-shaped signal over a plurality of periods, where each period has a plurality of frames. The pulse stream also includes a plurality of pulse sets, where each pulse set is associated with at least one of the noise-shaping levels, and, for each pulse set having a total pulse width for its period that is less than its period and greater than zero, each pulse set includes at least one pulse in each frame for its period.

Abstract: In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by blocking the formation of one or more n+ source regions and providing a metalized region adjacent to an underlying n-epitaxial region.

Abstract: An optical disk drive system associated with a laser diode is described. The optical disk drive system comprises a current generator for receiving input signals; a current switch coupled to receive timing signals; a current driver coupled to receive output signals from the current switch and the current generator, the current driver further comprising a driver with wave shape control selected from the group consisting of a laser diode read driver and a laser diode write driver, wherein the driver with shape control is operative for transmitting at least one output signal that is a scaled version of at least one of the output signals received from the current generator, wherein the current driver is operative for transmitting at least one output signal driving the laser diode.

Abstract: An integrated circuit carries an intellectual property core. The intellectual property core includes a test access port 39 with test data input leads 15, test data output leads 13, control leads 17 and an external register present, ERP lead 37. A scan register 25 encompasses the intellectual property core and ERP lead 37 carries a signal indicating the presence of the scan register.

Abstract: Multiple secure environments are established within a system on a chip (SoC) by defining a first secure region within a non-volatile memory in the SoC with a first set of parameters written into a predefined parameter region of the non-volatile memory. A second secure region within the non-volatile memory may be defined at a later time by a second set of parameters written into another predefined parameter region of the non-volatile memory. A security module is initialized each time the SoC is powered on by transferring the first set of parameters and the second set of parameters from the parameter region to the security module in a manner that does not expose the first set of parameters or the second set of parameters to a program being executed by the processor. The multiple secure regions of the SoC are enforced by the security module according to the parameter data.

Abstract: An integrated circuit is described that has a substrate with a memory array with dedicated support hardware formed on the substrate. An access wrapper circuit is coupled to address and data lines of the memory array and to control lines of the dedicated support hardware. The wrapper circuit is configured to provide an access port to the memory array. A test controller is formed on the substrate and coupled in parallel with the access wrapper circuit to the address and data lines of the memory array and to the control lines of the dedicated support hardware, wherein the test controller is operable to perform a test of the memory array by manipulating control signals to the support hardware in addition to those required to write data patterns into the memory array and to read the contents of the memory array.

Abstract: A multi-chip module includes a first die having a control processor to generate a signal to control an industrial process and an input/output interface. The multi-chip module also includes a second die having a supervisory processor and an input/output interface. A processor failure of one of the control processor and the supervisory processor is detected by the other of the control processor and the supervisory processor, and the processor that detects the failure is configured to assert a signal through its input/output interface to cause the industrial process to transition to a safe state in response to the failure. Additionally, the first and second dies are created using different process technologies.

Abstract: Methods and apparatuses are disclosed for managing memory write back. In some embodiments, the method may include examining current and future instructions operating on a stack that exists in memory, determining stack trend information from the instructions, and utilizing the trend information to reduce data traffic between various levels of the memory. As stacked data are written to a cache line in a first level of memory, if future instructions indicate that additional cache lines are required for subsequent write operations within the stack, then the cache line may be written back to a second level of memory. If however, the future instructions indicate that no additional cache lines are required for subsequent write operations within the stack, then the first level of memory may avoid writing back the cache line and also may keep it marked as dirty.

Abstract: An integrated circuit containing logic transistors and an array of SRAM cells in which the logic transistors are formed in semiconductor material with one crystal orientation and the SRAM cells are formed in a second semiconductor layer with another crystal orientation. A process of forming an integrated circuit containing logic transistors and an array of SRAM cells in which the logic transistors are formed in a top semiconductor layer with one crystal orientation and the SRAM cells are formed in an epitaxial semiconductor layer with another crystal orientation. A process of forming an integrated circuit containing logic transistors and an array of SRAM cells in which the SRAM cells are formed in a top semiconductor layer with one crystal orientation and the logic transistors are formed in an epitaxial semiconductor layer with another crystal orientation.

Abstract: A CMOS device having an NMOS transistor with a metal gate electrode comprising a mid-gap metal with a low work function/high oxygen affinity cap and a PMOS transistor with a metal gate electrode comprising a mid gap metal with a high work function/low oxygen affinity cap and method of forming.

Abstract: Scan architectures are commonly used to test digital circuitry in integrated circuits. The present invention describes a method of adapting conventional scan architectures into a low power scan architecture. The low power scan architecture maintains the test time of conventional scan architectures, while requiring significantly less operational power than conventional scan architectures. The low power scan architecture is advantageous to IC/die manufacturers since it allows a larger number of circuits (such as DSP or CPU core circuits) embedded in an IC/die to be tested in parallel without consuming too much power within the IC/die. Since the low power scan architecture reduces test power consumption, it is possible to simultaneously test more die on a wafer than previously possible using conventional scan architectures. This allows wafer test times to be reduced which reduces the manufacturing cost of each die on the wafer.