Abstract: Areas of a semiconductor substrate where semiconductor devices are not to be formed are filled in with dummy active areas. Whole dummy active areas are formed in areas of the semiconductor substrate where semiconductor devices are not to be formed, and partial dummy active areas are formed in areas of the semiconductor substrate where semiconductor devices are not to be formed, but where whole dummy active areas can not be accommodated. The dummy active areas are staggered so as to provide uniform parasitic capacitive coupling to overlying leads regardless of the placement of the leads. The dummy active areas are substantially evenly separated from one another by dividers. The dummy active areas and dividers are formed concurrently with formation of semiconductor devices in non-dummy active areas. The dummy active areas mitigate yield loss by, among other things, providing more uniformity across the substrate, at least with regard to parasitic capacitances and stress and subsequent processing.

Abstract: A direct memory access (DMA) circuit (200) includes a read port (202) and a write port (204). The DMA circuit (200) is a multithreaded initiator with “m” threads on the read port (202) and “n” threads on the write port (204). The DMA circuit (200) includes two decoupled read and write contexts and schedulers (302, 304) that provide for more efficient buffering and pipelining. The schedulers (302, 304) are mainly arbitrating between channels at a thread boundary. One thread is associated to one DMA service where a service can be a single or burst transaction. The multithreaded DMA transfer allows for concurrent channel transfers.

Abstract: A method includes parsing a design of the integrated circuit to define cells in automatic power gating power domains, automatically creating an automatic power gating power domain netlist from the parsed design of the integrated circuit, and placing and routing the automatic power gating power domain netlist to produce a layout for the integrated circuit. The parsing partitions a high-level power domain of the integrated circuit into one or more automatic power gating power domains. The automatic power gating power domains have substantially zero-cycle power up times, thereby enabling transparent operation. Furthermore, the automatic power gating power domains may be automatically inserted into designs of integrated circuits, thereby relieving integrated circuit designers of the task of inserting power domains and associated hardware and software.

Abstract: The present invention is applicable to an electronic device including a master, a slave, a bus coupling the master and the slave and a clock generator for providing a system clock to the master and slave. The clock generator determines whether the received data is correct on a cycle-by-cycle basis. The clock generator suppresses an edge of a next clock cycle of the system clock signal if the data is not to be correct. The clock generator allows the edge of a next clock cycle of the system clock signal if the data is correct.

Abstract: According to one embodiment, a projector display device includes an enclosure configured with a projection hole and a translucent display screen configured over an aperture in the enclosure. The projection hole receives a light beam generated by a projector. The light beam is directed toward the translucent display screen for producing imagery on the translucent display screen.

Abstract: A method of manufacturing a semiconductor device. The method comprises fabricating a ferroelectric capacitor. The capacitor's fabrication includes forming conductive and ferroelectric material layers on a semiconductor substrate, forming a hardmask layer on the conductive and ferroelectric material layers, forming an organic bottom antireflective coating layer on the hardmask layer, and, patterning the organic bottom antireflective coating layer. Seasoning in a hardmask etching chamber is substantially unaffected by the patterning.

Abstract: A semiconductor device (100) has one or more semiconductor chips (110) with active and passive surfaces, wherein the active surfaces include contact pads. The device further has a plurality of metal segments (111) separated from the chip by gaps (120); the segments have first and second surfaces, wherein the second surfaces (111b) are coplanar (130) with the passive chip surface (101b). Conductive connectors span from the chip contact pads to the respective first segment surface. Polymeric encapsulation compound (150) covers the active chip surface, the connectors, and the first segment surfaces, and are filling the gaps so that the compound forms surfaces coplanar (130) with the passive chip surface and the second segment surfaces. In this structure, the device thickness may be only about 250 ?m. Reflow metals may be on the passive chip surface and the second segment surfaces.

Abstract: Disclosed are methods, circuits, and systems for implementing an AC voltage adapter and battery charger system in a closed loop topology. Embodiments of the invention include methods for controlling an AC adapter charging a battery with steps for using a closed loop configuration to monitor one or more selected parameters in the charging loop. Feedback to the AC adapter is used for dynamically controlling the adapter output voltage. A preferred embodiment exemplifies a closed loop circuit for battery charging. The circuit includes an AC adapter and a monitoring circuit for monitoring the closed loop and for providing feedback to the AC adapter, controlling the adapter output voltage.

Abstract: Embodiments of the present disclosure provide a memory element, a method of constructing a memory element, a method of operating a memory cell, an SRAM cell and an integrated circuit. In one embodiment, the memory element includes a pair of cross-connected CMOS inverters having first and second storage nodes. Additionally, the memory element also includes a capacitive component connected between the first and second storage nodes and configured to provide a supplemental capacitance to extend a read signal for sensing a memory state of the inverters.

Abstract: A method and circuit for termination of internal cycle and its associated tracking circuits in high performance self timed compiler memories is disclosed. In one embodiment, a method of timing the precharging of BLs in a self timed compiler memory array includes initiating an internal clock during the start of a read/write cycle by a control block, triggering DWL and WLs to go high upon initiating the internal clock by the control block, triggering DBL and BLs to go low upon the DWL and WLs going high by the control block, generating a reset BL signal upon the DWL going high and the DBL going low by the tracking circuit, disabling the DBL from going further low upon receiving the reset BL signal by the tracking circuit, and precharging the DBL to go high upon receiving the reset BL signal by the precharge circuit.

Abstract: A processor (e.g., a co-processor) comprising a decoder coupled to a pre-decoder, in which the decoder decodes a current instruction in parallel with the pre-decoder pre-decoding a subsequent instruction. In particular, the pre-decoder examines at least five Bytecodes in parallel with the decoder decoding a current instruction. The pre-decoder determines if a subsequent instruction contains a prefix. If a prefix is detected in at least one of the five Bytecodes, a program counter skips the prefix and changes the behavior of the decoder during the decoding of the subsequent instruction.

Abstract: In a first embodiment a TAP of IEEE standard 1149.1 is allowed to commandeer control from a WSP of IEEE standard P1500 such that the P1500 architecture, normally controlled by the WSP, is rendered controllable by the TAP. In a second embodiment (1) the TAP and WSP based architectures are merged together such that the sharing of the previously described architectural elements are possible, and (2) the TAP and WSP test interfaces are merged into a single optimized test interface that is operable to perform all operations of each separate test interface. One approach provides for the TAP to maintain access and control of the TAP instruction register, but provides for a selected data register to be accessed and controlled by either the TAP+ATC or by the discrete CaptureDR, UpdateDR, TransferDR, ShiftDR, and ClockDR WSP data register control signals.

Abstract: Systems and methods for digital isolation in circuits are provided. On power-up in an isolation application, there may be multiple power supplies. For example, one for an input side and one for an output side, both in relation to an isolation barrier. Upon power up, the input and output may not be at the same state. The bias of the output may be the opposite of what is on the input. An isolator solution is provided which integrates the digital isolation into the analog solution. A DC signal corresponds to the static state of the data at start-up and an AC signal is generated when switching begins. In one example, the output level corresponds to the input level when the steady state information is encoded and sent across as an AC signal.

Abstract: The problems noted above are solved in large part by a method and system to construct a data-flow analyzer for a bytecode verifier using existing hardware resources and software. Specifically, micro-sequences and JSM hardware resources may be employed fetch a first instruction, apply the first instruction to a decode logic of a processor, trigger execution of a first series of instructions by the decode logic that pops a first value off of a data structure, such as a stack or local variable map, the first value indicative of a parameter type pushed on the stack or local variable map by a previously decoded instruction; and verify that the first value is a parameter type expected by the first instruction.

Abstract: A novel and useful apparatus for and method of local oscillator (LO) generation with non-integer multiplication ratio between the local oscillator and RF frequencies. The LO generation schemes presented are operative to generate I and Q square waves at a designated frequency while avoiding the well known issue of harmonic pulling. The input signal is fed to a synthesizer timed to a rational multiplier of the RF frequency L/N fRF. The clock signal generated is divided by a factor Q to form 2Q phases of the clock at a frequency of L(N*Q)fRF, wherein each phase undergoes division by L. The phase signals are input to a pulse generator which outputs a plurality of pulses. The pulses are input to a selector which selects which signal to output at any point in time. By controlling the selector, the output clock is generated as a TDM based signal. Any spurs are removed by an optional filter.

Abstract: A PHY entity for a UWB system utilizes the unlicensed 3.1-10.6 GHZ UWB band, as regulated in the United States by the Code of Federal Regulation, Title 47, Section 15. The UWB system provides a wireless pico area network (PAN) with data payload communication capabilities of 55, 80, 110, 160, 200, 320 and 480 Mb/s. The UWB system employs orthogonal frequency division multiplexing (OFDM) and uses a total of 122 sub-carriers that are modulated using quadrature phase shift keying (QPSK). Forward error correction coding (convolutional coding) is used with a coding rate of 11/32, 1/2, 5/8 and 3/4.

Abstract: Systems and methods for cell anomaly detection are provided. The disclosed systems and methods of cell anomaly detection may use a single circuit to detect both cell-open and imbalance conditions. Disclosed embodiments may incorporate a continuous or a sampled time system (i.e. cell anomaly detection is performed when an enable signal is active). An example embodiment includes receiving voltages of a plurality of cells of a battery pack; converting the received voltages to currents; determining a maximum current of the currents; determining whether at least one of the currents is anomalous; and reporting the at least one anomalous current as indicative of a bad cell.

Abstract: A 2-terminal (i.e., anode, cathode) symmetrical bidirectional semiconductor electrostatic discharge (ESD) protection device is disclosed. The symmetrical bidirectional semiconductor ESD protection device design comprises a first and second shallow wells symmetrically spaced apart from a central floating well. Respective shallow wells comprise a first and second highly doped contact implant with opposite doping types (e.g., n-type, p-type). One or more field plates, connected to the central floating well, extend laterally outward from above the central well. The device can be used as an ESD protection device at a bidirectional I/O (e.g., in parallel with a symmetrical MOS to be protected). Upon an ESD event at an input node comprising the first and second shallow wells, a coupled npn-pnp bipolar component comprising the center well, the first and second shallow wells, and the first and second contact implants, is triggered, thereby shunting current from the first to the second shallow well.

Abstract: An automatic power tuning system and method, and a transmitter employing either the system or the method. In one embodiment, the system includes: (1) a power detector circuit coupled to an output of a transmitter, the transmitter having an integrator with a first, reference integrator current power control input, a second, integrator capacitor power control input and a plurality of driver fingers selectably employable by a third, driver finger power control input, the power detector configured to generate signals indicating an output voltage of the transmitter and (2) a digital processing circuit coupled to the power detector circuit and configured to employ the signals to determine at least near-optimum reference integrator current and integrator capacitor settings and select a number of driver fingers to employ to drive the output voltage.

Abstract: This disclosure describes a processor system that allows non-real time code to execute normally, while permitting a real time interrupt in hardware or software to execute with minimal added latency.