Abstract: One embodiment of the present invention includes a method for controlling a gain of a wideband signal. The method comprises adding a virtual channel to the wideband signal, the wideband signal comprising at least one channel. The method also comprises monitoring an output power associated with the wideband signal that includes the at least one channel and the virtual channel. The method further comprises setting a gain factor to achieve a predetermined output power of the wideband signal and amplifying the wideband signal based on the gain factor.

Abstract: A method of fabricating an interconnect structure, comprising exposing an empty deposition chamber to a process that includes generating reactive species produced from a source gas in the presence of a plasma. The method further comprises terminating the plasma and then introducing a semiconductor substrate with a metal layer thereon into the chamber while the reactive species are present in the chamber.

Abstract: The disclosure herein pertains to fashioning a low noise junction field effect transistor (JFET) where transistor gate materials are utilized in forming and electrically isolating active areas of a the JFET. More particularly, active regions are self aligned with patterned gate electrode material and sidewall spacers which facilitate desirably locating the active regions in a semiconductor substrate. This mitigates the need for additional materials in the substrate to isolate the active regions from one another, where such additional materials can introduce noise into the JFET. This also allows a layer of gate dielectric material to remain over the surface of the substrate, where the layer of gate dielectric material provides a substantially uniform interface at the surface of the substrate that facilitates uninhibited current flow between the active regions, and thus promotes desired device operation.

Abstract: A capacitor under bitline DRAM memory cell and method for its fabrication provides a high density memory cell with the capacitor formed in the PMD layer. The memory cell utilizes several variations of storage contact pillar structures as, for example, a storage plate of the memory cell capacitor formed within a trench in the PMD layer. This capacitor plate structure is overlaid with a capacitor dielectric layer which is overlaid with another conductive layer, for example, the M1 layer to form the other capacitor plate. An access transistor formed between substrate active regions and a word line, is in electrical communication with a bit line contact, the storage contact capacitor plate, and the word line respectively. The high density memory cell benefits from the simple standard processes common to logic processes, and in one embodiment requiring only one additional masking step.

Abstract: Control commands are transmitted via an emulation interface holding a test clock signal at a constant value and switching a test mode select signal a number of times corresponding to the control command. A receiving system counts switches of the test mode select signal switches while the test clock is constant and interprets the number of switches as a corresponding control command.

Abstract: A method of fabricating an integrated circuit (IC) including at least one drain extended MOS (DEMOS) transistor and ICs therefrom includes providing a substrate having a semiconductor surface, the semiconductor surface including at least a first surface region that provides a first dopant type. A patterned masking layer is formed on the first surface region, wherein at least one aperture in the masking layer is defined. The first surface region is etched to form at least one trench region corresponding to a position of the aperture. A dopant of a first dopant type is implanted to raise a concentration of the first dopant type in a first dopant type drift region located below the trench region. After the implanting, the trench region is filled with a dielectric fill material. A body region is then formed having a second dopant type in a portion of the first surface region. A gate dielectric is then formed over a surface of the body region and the first surface region.

Abstract: A novel apparatus for and method of acquisition and tracking bank cooperation in a digitally controlled oscillator (DCO) within an all digital phase locked loop (ADPLL). The acquisition bits of the acquisition bank are used as an extension of the modulation range. The PLL and TX tuning data are broken up (i.e. apportioned) into acquisition components and tracking components. This permits the use of two different capacitor banks (i.e. the tracking and acquisition banks) for modulation rather than just a single capacitor bank as in the prior art schemes. Incorporating the tracking and acquisition bit varactors, the cooperation scheme of the present invention permits the re-centering of the tracking bank to handle natural frequency drift of the DCO and the widening of the modulation range.

Abstract: A circuit and method of determining the power output for a converter circuit includes determining a time averaged voltage from a rectified voltage of a winding of the transformer and multiplying the time averaged voltage by a constant determined at least in part by an average current of a winding of the transformer. By one approach, a rectified voltage from a primary side of the transformer is time averaged using a filter circuit. The current can be known or preset or controlled by the converter circuit such that the time averaged voltage reading, assuming a constant current, can be compared to a preset voltage such that the voltage reading approximates a power reading for the transformer. By another approach, the time averaged voltage is multiplied by the current to obtain a power output reading.

Abstract: One embodiment relates to a computer method of evaluating proposed edits to a target layer of an integrated circuit. In the method, a number of editable regions is determined for metal layers overlying the target layer, where an editable region for a metal layer is laterally arranged between segments of the metal layer. The method identifies a number of possible vertical milling paths that extend from an exterior surface of the integrated surface to the target layer. Each possible vertical milling path passes through at least one editable region. The method generates a number of possible edit plans that are based on both the proposed edits and the number of possible vertical milling paths, where each edit plan places edits in a different combination of possible vertical milling paths.

Abstract: A memory system having a memory controller plus one or more registered memory modules, each registered memory module having a bank of memory chips and an associated register. A pre-register address/command bus connects the memory controller with the associated register. Each registered memory module has a post-register command/address bus that connects the memory chips in parallel with the associated register. The post-register command/address bus terminates with termination resistors that are connected to a voltage level that is approximately half of the supply voltage level. The memory controller provides chip select signals to the associated register of the registered memory modules. The associated registers, however, switch command/address signals to the memory chips independent of the chip select signals.

Abstract: A current mirroring circuit is provided. The circuit generally comprises a current source; a first drain extended (DE) MOS transistor, a second DE MOS transistor, a current mirror, and differential amplifier. The current source is generally coupled to the current source at its drain, while the current mirror that is coupled to the sources of the first and second DE MOS transistors and to the current source. The differential amplifier generally has a first input that is coupled to the source of the first DE MOS transistor, a second input that is coupled to the source of the second DE MOS transistor, a first output that is coupled to the gate of the second DE MOS transistor, and a second output that is coupled to the gate of the first DE MOS transistor.

Abstract: The application describes a data processor operable to process data, and comprising: a cache in which a storage location of a data item within said cache is identified by an address, said cache comprising a plurality of storage locations and said data processor comprising a cache directory operable to store a physical address indicator for each storage location comprising stored data; a hash value generator operable to generate a generated hash value from at least some of said bits of said address said generated hash value having fewer bits than said address; a buffer operable to store a plurality of hash values relating to said plurality of storage locations within said cache; wherein in response to a request to access said data item said data processor is operable to compare said generated hash value with at least some of said plurality of hash values stored within said buffer and in response to a match to indicate a indicated storage location of said data item; and said data processor is operable to access

Abstract: Semiconductor devices and methods are disclosed for improving electrical connections to integrated circuits. A process flow and device with a dual/single damascene interconnect structure overlying an existing interconnect structure in a semiconductor wafer is provided. A capping layer is formed thereon that comprises nickel/palladium layers within a bond pad opening. The layers are polished using a chemical mechanical polishing (CMP) technique so that the capping layers are within the opening.

Abstract: According to one embodiment of the invention, a method is provided for aspect ratio distortion minimization. The method includes receiving input pixels from a video source. The method then determines an input position and scale factor for each input pixel. A count value determines that a pixel should be outputted. A polyphase finite impulse response filter is centered on a particular input pixel based on the count value. An output pixel is generated using the polyphase finite response filter on a particular input pixel based on the count value and output pixels are outputted.

Abstract: One embodiment relates to a memory element disposed on a substrate. The memory element includes first and second interlocked data storage elements adapted to cooperatively store the same datum. An output of the first data storage element is coupled to an input node of the second data storage element. An output of the second data storage element is coupled to an input of the first data storage element. An isolation element in the substrate is arranged laterally between storage nodes of the first and second data storage elements. The isolation element is arranged to limit charge sharing between the storage nodes of the first and second data storage elements. Other methods and systems are also disclosed.

Abstract: One embodiment of the present invention relates a semiconductor device formed by utilizing a two step deposition method for forming a gate electrode without causing damages to an underlying gate dielectric material. In one embodiment, a first layer of gate electrode material (first gate electrode layer) is formed onto the surface of a gate dielectric material using a deposition that does not damage the gate dielectric material (e.g., physical vapor deposition) thereby resulting in a damage free interface between the gate dielectric material and the gate electrode material. A second layer of gate electrode material (second gate electrode layer) is then formed onto the first layer of gate electrode material using a chemical deposition method that provides increased deposition control (e.g., good layer uniformity, impurity control, etc.). The first and second gate electrode layers are then selectively patterned to cumulatively form a semiconductor device's gate electrode.

Abstract: An electronic device is provided, which includes a current supplying stage which is adapted to supply a first compensation current and a second compensation current to a first wire or a second wire, wherein the first compensation current is determined during a first clock period, when the first wire and the second wire are connected. The second compensation current is determined during a second clock period while the first wire and the second wire are not connected and the magnitude of the second current represents a ratio of a resistance value of the first wire and a resistance value of the second wire.

Abstract: A method of manufacturing a memory cell 200. The method comprises forming a memory stack 215. Forming the memory stack includes pre-treating an insulating layer 210 in a substantially ammonia atmosphere for a period of more than 5 minutes to thereby form a pre-treated insulating layer 310. Forming the memory stack also includes depositing a silicon nitride layer on the pre-treated insulating layer.

Abstract: A signal processing circuit is configured to calculate a gain ratio to efficiently reduce a peak to average signal ratio for an input signal by identifying signal peaks and determining the signal peak magnitudes. A window function in combination with the gain ratio is applied to a portion of the input stream having a peak signal to create a cancellation pulse to be applied to that peak signal. The cancellation pulse phase is aligned with the signal phase, thereby causing minimal phase distortion in the resultant output signal and accurate peak cancellation. The cancellation pulse can also include a finite impulse response filter portion to efficiently handle wide bandwidth signals. The hardware may be configured to process multiple signal streams in parallel to reduce hardware requirements. An algorithm can determine the effect of multiple corrections to the input stream to avoid overcorrection in the signal processing process.

Abstract: A method for treating an area of a semiconductor wafer surface with a laser for reducing stress concentrations is disclosed. The wafer treatment method discloses treating an area of a wafer surface with a laser beam, wherein the treated area is ablated or melted by the beam and re-solidifies into a more planar profile, thereby reducing areas of stress concentration and stress risers that contribute to cracking and chipping during wafer singulation. Preferably, the treated area has a width less than that of a scribe street, but wider than the kerf created by a wafer dicing blade. Consequently, when the wafer is singulated, the dicing blade will preferably saw through treated areas only. It will be understood that the method of the preferred embodiments may be used to treat other areas of stress concentration and surface discontinuities on the wafer, as desired.