Abstract: A communication system 100 allows for heterogeneous piconets/scattenets 100 where in multiple modes 110, 112 of transmission, one of Bluetooth 110 and one or more other modes of transmission 112 are possible. While at the same time maintaining synchronization between all the different modes of transmission 110, 112 in a given piconet and across a scatternet 100. This allows for a communication device that can communicate using a plurality of transmission modes depending on the communication needs of the device.

Abstract: A docking station provides fixed mobile convergence and includes a docking interface for a communication unit, a transceiver for a fixed packet network, and/or a telephone interface to a public switched telephone network (PSTN) telephone. The method includes detecting if the communication unit, fixed packet network, and/or PSTN telephone is connected. If the fixed packet network is available and the communication unit connected, a connection is established between the two in response to a call initiated/received at the communication unit; packets are transferred so that calls on the communication unit are conducted over the fixed packet network. If the PSTN telephone and the communication unit are connected, a connection is established between the two in response to a call initiated at the PSTN telephone or received at the communication unit; protocols are interworked to permit calls placed/received on the PSTN telephone to be conducted over the cellular network.

Abstract: An integrated circuit (IC) includes a semiconductor substrate, a least one MOS transistor formed in or on the substrate, the MOS transistor including a source and drain doped with a first dopant type having a channel region of a second dopant type interposed between, and a gate electrode and a gate insulator over the channel region. A silicide layer forming a low resistance contact is at an interface region at a surface portion of the source and drain. At the interface region a chemical concentration of the first dopant is at least 5×1020 cm?3. Silicide interfaces according to the invention provide MOS transistor with a low silicide interface resistance, low pipe density, with an acceptably small impact on short channel behavior.

Abstract: An image system comprises a light valve and an image capturing unit. The light valve comprises an array of individually addressable pixels capable of generating an image. The image capturing unit comprises a detector having an array of detector pixels capable of capturing images. The detector pixels are correlated with the light valve pixels.

Abstract: One aspect of the invention provides a method of manufacturing a FeRAM semiconductor device having reduce single bit fails. This aspect includes forming an electrical contact within a dielectric layer located over a semiconductor substrate and forming a first barrier layer over the dielectric layer and the electrical contact. The first barrier layer is formed by depositing multiple barrier layers and densifying each of the barrier layers after its deposition. This forms a stack of multiple barrier layers of a same elemental composition. The method further includes forming a second barrier layer over the first barrier layer and forming a lower capacitor electrode, a ferroelectric dielectric layer over the lower capacitor, and forming an upper capacitor electrode over the ferroelectric dielectric layer. A device made by this method is also provided herein.

Abstract: An integrated circuit includes a SRAM array including a plurality of SRAM cells arranged in a plurality of rows and columns and having a plurality of word lines and bit lines for accessing rows and columns of cells. A power supply controller has an input operable for receiving an operation signal indicative of whether the array is in a read or write operation. The power supply controller is operable to provide a variable low voltage for the array (VSSM) coupled to a low voltage supply terminal of the array. A level of the VSSM is based on the operation signal, wherein VSSM is at a lower level when in the read operation than when in the write operation. A high voltage supply for said array (VDDM) coupled to a high voltage supply terminal for the array is biased above a word line voltage (VWL) level in the read operation.

Abstract: Provided is a method for manufacturing a semiconductor device. The method, in one embodiment, includes calibrating an inspection tool configured to obtain a measurement of a semiconductor feature, including: 1) providing a test structure comprising a substrate having a trench therein, and a post feature located over the substrate adjacent the trench. The post feature, in this embodiment, includes a second layer positioned over a first layer, wherein the first layer has a notch or bulge in a sidewall thereof; 2) finding a location of the notch or bulge relative to a different known point of the test structure using a probe of the inspection tool; and 3) calculating a dimension of the probe using the relative locations of the notch or bulge and the different known point.

Abstract: One aspect of the invention provides a semiconductor device that includes a microchip having an outermost surface. First and second bond pads are located on the microchip and near the outermost surface. A first UBM contact is located on the outermost surface and between the first and second bond pads. The first UBM contact is offset from the first bond pad. A second UBM contact is located on the outermost surface and between the first and second bond pads. The second UBM contact is offset from the second bond pad, and a capacitor supported by the microchip is located between the first and second UBM contacts.

Abstract: Quick changeover apparatus for wafer handlers capable of handling at least two sizes of wafer frames and methods of using such apparatus are disclosed.

Abstract: An integrated circuit (70) having parallel scan paths (824-842, 924-942) includes a pair or pairs of scan distributor (800,900) and scan collector (844,944) circuits. The scan paths apply stimulus test data to functional circuits (702) on the integrated circuit and receive response test data from the functional circuits. A scan distributor circuit (800) receives serial test data from a peripheral bond pad (802) and distributes it to each parallel scan path. A scan collector circuit (844) collects test data from the parallel scan paths and applies it to a peripheral bond pad (866). This enables more parallel scan paths of shorter length to connect to the functional circuits. The scan distributor and collector circuits can be respectively connected in series to provide parallel connections to more parallel scan paths. Additionally multiplexer circuits (886,890) can selectively connect pairs of scan distributor and collector circuits together.

Abstract: A switch provided between a first terminal and a second terminal with a varying cross terminal voltage. The switch contains two transistors, with the source terminal of the first transistor being coupled to the first terminal and a drain terminal of the second transistor being coupled to the second terminal. The gate terminal of the first transistor is coupled to the first terminal, the gate terminal of the second transistor is coupled to the second terminal, and the drain terminal of the first transistor is coupled to the source terminal of the second transistor. Due to such a topology, the cross-terminal voltage across the first and second terminals can be substantially higher than the voltage of the control signal indicating whether the switch is to be in on or off state.

Abstract: The present invention provides a method for testing an electrical property of one or more functionally separate transistors located within an active region that is common with other transistors, a method for characterizing the leakage current of at least one of a plurality of functionally separate transistors located in a common active region of a circuit, and a test structure for testing one or more functionally separate transistors located within a common active region. The method for testing the electrical property, among other steps, includes providing a pair of functionally separate transistors (110) located within a common active region, and biasing a terminal (135) between the pair (110) relative to gates (125, 155) of the pair (110) and terminals (130, 160) outlying the pair (110) to obtain a leakage current associated with the pair (110).

Abstract: Cycle-accurate real-time clocks and methods to operate the same are disclosed. An example real-time clock comprises a first counter to count cycles of a selectively-operable clock, a multiplexer to select from at least an output signal associated with the first counter or a continuously-operating clock, and a second counter to count cycles of an output signal of the multiplexer.

Abstract: A transistor apparatus includes a silicon substrate and a barrier structure extending substantially from generally adjacent the silicon substrate to a locus displaced from the silicon substrate. The barrier structure generally surrounds a volume containing connection loci for the transistor apparatus and a buried layer in a silicon medium. The connection loci and the buried layer occupy a space generally presenting a first lateral expanse generally parallel with the silicon substrate. The volume presents a second lateral expanse generally parallel with the silicon substrate. The second lateral expanse is greater than the first lateral expanse within a predetermined distance of the substrate.

Abstract: Semiconductor devices and fabrication methods are provided in which a capacitor dielectric is provided with phosphorus or other n-type dopants through implantation of other techniques to reduce the voltage coefficient of capacitance and/or the dielectric absorption of the capacitor.

Abstract: A method and apparatus of the present invention is particularly for use in display systems having spatial light modulators in which the pixels present asymmetrical switching delays. For a desired illumination intensity of a pixel, a series of pulse-width-modulation bit values for the pixel is determined based at least in part upon a parameter that characterizes the asymmetrical transition behavior of the pixel between states.

Abstract: A method of optimizing bandwidth of a wireless link between a display device and an image data player. The display device is configured with one or more features that affect its bandwidth capacity. This configuration results in one or more “bandwidth reduction parameters”. The display device is programmed to communicate these parameters to the player via the wireless link, so that the player can deliver device-specific image data to the display device.

Abstract: An integrated BiCMOS semiconductor circuit has active moat areas in silicon. The active moat areas include electrically active components of the semiconductor circuit, which comprise active window structures for base and/or emitter windows. The integrated BiCMOS semiconductor circuit has zones where silicon is left to form dummy moat areas which do not include electrically active components, and has isolation trenches to separate the active moat areas from each other and from the dummy moat areas. The dummy moat areas comprise dummy window structures having geometrical dimensions and shapes similar to those of the active window structures for the base and/or emitter windows.

Abstract: A processor comprising fetch logic adapted to fetch a set of instructions from memory, the set comprising a subset of instructions. The processor further comprises decode logic coupled to the fetch logic and adapted to process the set of instructions, and a clock coupled to the decode logic. When processed, an instruction from the set causes the clock to increment a counter external to the processor while the subset is processed. A status of the counter is manipulated to determine an efficiency level pertaining to the subset of instructions.

Abstract: A system comprising a first double data rate (DDR) memory device, a second DDR memory device coupled to the first DDR memory device, the second DDR memory device not using a delay locked loop (DLL) device to synchronize clock signals. The system further comprises a logic coupled to the first and second DDR memory devices. The logic is adapted to receive data from the first and second DDR memory devices by way of a single conductive pathway.