Abstract: A memory system includes a memory and a memory controller coupled to the memory. The memory controller includes a data buffer configured to store a full data word as a result of a partial write operation, wherein for a subsequent partial write operation, data is read from the data buffer.

Abstract: The gate-to-source and gate-to-drain overlap capacitance of a MOS transistor with a metal gate and a high-k gate dielectric are reduced by forming the high-k gate dielectric along the inside of a sidewall structure which has been formed to lie further away from the source and the drain.

Abstract: Apparatus and methods disclosed herein implement an RF receive-band filter at a receive chain input of a wireless base station with a co-located transmitter and receiver. The RF receive-band filter includes an adaptive filter component to perform filtering operations on samples of a digital baseband or intermediate frequency signal x(n) from a transmit chain associated with the wireless base station. An adaptive filter transfer function is determined in real time such that samples of the baseband transmit signal x(n) are transformed into a cancellation baseband signal z(n). The digital cancelation baseband signal z(n) is then digital-to-analog converted and the resulting analog baseband signal z(t) is up-converted to obtain a subtractive RF cancelation signal c(t). C(t) is summed with a desirable received signal RF component r(t) and an undesirable transmitter leakage RF signal component l(t) appearing at the input to the base station receiver.

Abstract: Embodiments of methods and systems for overlapping priority contention windows in G3-PLC networks are presented. In one embodiment, a Normal Priority Contention Window (NPCW) is allowed to overlap with a High Priority Contention Window (HPCW). The minimum contention window for the normal priority frames (i.e., NPCW) is equal to or longer than the contention window for high priority frames (i.e., HPCW). By making the NPCW longer than the HPCW, the high priority frames will have a better chance than normal priority frames to get access to the channel on transmission reattempts.

Abstract: Systems and methods for application profiles and device classes in power line communications (PLCs) are described. In some embodiments, a PLC device may include a processor and a memory coupled to the processor. The memory may be configured to store program instructions, which may be executable by the processor to cause the PLC device to communicate with a higher-level PLC apparatus over a power line using a frequency band. The frequency band may be selected based upon an application profile and/or a device class associated with the PLC device. In some implementations, the higher-level PLC apparatus may include a PLC gateway or a data concentrator, and the PLC device may include a PLC modem or the like. Examples of application profiles include access communications, in-premises connectivity, AC charging, and/or DC charging. Device classes may represent a minimum communication data rate and/or an operating frequency band restriction of the PLC device.

Abstract: This invention assures cache coherence in a multi-level cache system upon eviction of a higher level cache line. A victim buffer stored data on evicted lines. On a DMA access that may be cached in the higher level cache the lower level cache sends a snoop write. The address of this snoop write is compared with the victim buffer. On a hit in the victim buffer the write completes in the victim buffer. When the victim data passes to the next cache level it is written into a second victim buffer to be retired when the data is committed to cache. DMA write addresses are compared to addresses in this second victim buffer. On a match the write takes place in the second victim buffer. On a failure to match the controller sends a snoop write.

Abstract: A method for driving a piezoelectric transducer is provided. An input signal is received. At least one of a plurality of modes is selected for a buck-boost stage from a comparison of a desired voltage on a capacitor to a first threshold and a second threshold, where the desired voltage is determined from the input signal. The piezoelectric transducer is then driven substantially within the audio band using the desired voltage on the capacitor using an H-bridge that changes state with each zero-crossing.

Abstract: A file system which ensures that some of the (desired) files (“linear files”) are stored in corresponding exclusive blocks (i.e., a block that stores data corresponding to one file only). Due to such a feature, rewriting of data corresponding to other files would not cause data corresponding to linear files to be relocated/rewritten. Such a feature may provide reliable and steady retrieval of data of the corresponding file from a flash memory organized as sectors. According to another aspect, some of the files (“non-linear files”) are stored in non-exclusive blocks (i.e., multiple files can share the same block or the same file can span multiple blocks without contiguity).

Abstract: In at least some embodiments, a system includes a multiple-input multiple-output (MIMO) base station and a plurality of MIMO user equipment (UE) devices in communication with the MIMO base station. The MIMO base station is configured to switch between a single-user (SU)-MIMO mode and a multiple-user (MU)-MIMO mode during communications with the plurality of MIMO UE devices based on multi-rank precoding matrix indicator (PMI) feedback received from at least one of the MIMO UE devices.

Abstract: In an amplifier, a first stage receives a differential input voltage, which is formed by first and second input voltages, and outputs a first differential current in response thereto on first and second lines having respective first and second line voltages. A second stage receives the first and second line voltages and outputs a second differential current in response thereto on third and fourth lines having respective third and fourth line voltages. A transformer includes first and second coils. A first terminal of the first coil is coupled through a first resistor to the first line. A second terminal of the first coil is coupled through a second resistor to the second line. A first terminal of the second coil is coupled through a third resistor to the third line. A second terminal of the second coil is coupled through a fourth resistor to the fourth line.

Abstract: An IO circuit capable of high voltage signaling in a low voltage BiCMOS process. The IO circuit includes a voltage rail generator circuit that receives a reference voltage and generates a voltage rail supply. A BJT (bi-polar junction transistor) buffer circuit is coupled to the voltage rail generator circuit and a pad. The BJT buffer circuit includes a pull-up circuit and a pull-down circuit. The pull-up circuit receives the voltage rail supply. The pull-down circuit is coupled to the pull-up circuit. The pad is coupled to the pull-up circuit and the pull-down circuit.

Abstract: In an amplifier, a first stage receives a differential input voltage, which is formed by first and second input voltages, and outputs a first differential current in response thereto on first and second lines having respective first and second line voltages. A second stage receives the first and second line voltages and outputs a second differential current in response thereto on third and fourth lines having respective third and fourth line voltages. A third stage receives the third and fourth line voltages and outputs an output voltage in response thereto. A slew boost circuit detects a slew condition, in which a threshold difference arises between the first and second input voltages, and outputs a slew current in response thereto for maintaining a slew rate of the output voltage during the slew condition. The first stage includes circuits for reducing a variable difference between the first and second line voltages.

Abstract: An input/output (IO) circuit is provided that reduces stress on a driver without using an additional reference voltage. The IO circuit receives an overshoot voltage and an undershoot voltage in a receive mode. The IO circuit includes a driver circuit. The driver circuit includes an NMOS transistor coupled to a PMOS transistor. A pad is coupled to the driver circuit. A PMOS protect circuit is coupled to the driver circuit and the pad. An NMOS protect circuit is coupled to the driver circuit and the pad. The NMOS protect circuit is configured to be activated only for a duration of the overshoot voltage received at the pad during the receive mode and the PMOS protect circuit is configured to be activated only for a duration of the undershoot voltage received at the pad during the receive mode.

Abstract: A method of charging a power harvested supply in an electronic communication device, which can be an NFC (near field communication) device. The power harvested supply in the electronic communication device is charged without causing dV/V violation and avoids false wake up. An RF (radio frequency) field is received at the antenna of the electronic communication device. A differential voltage is generated from the RF field at a first tag pin and a second tag pin of the electronic communication device. A bandgap reference voltage and a reference current are generated in response to the differential voltage. A shunt current is generated in response to the differential voltage and the bandgap reference voltage. A bank of switching devices is activated if the shunt current is more than the reference current.

Abstract: A method of coupling a first port of a single antenna to a first coupling circuit and a second port of the single antenna to a second coupling circuit. The method includes coupling a wireless charging unit to the first coupling unit and coupling an NFC transceiver block to the second coupling circuit. The method further includes isolating the single antenna from the wireless charging unit during a time interval when the NFC transceiver block is operational and isolating the single antenna from the NFC transceiver block during a time interval when the wireless charging unit is operational.

Abstract: A memory configurable to be used in an RTA mode includes an input latch configured to receive an input address bus and to generate a latched address bus that corresponds to a memory location. An address flop is configured to save the latched address and to generate a flopped address. A first block address pre-decoder stage is configured to generate a pre-decoded latched address to an RTA generation logic in response to the latched address bus; and a second block address pre-decoder configured to generate a pre-decoded flopped address to the RTA generation logic in response to the flopped address. The RTA generation logic generates an RTA enable signal one clock cycle before a memory block access, to activate a memory block corresponding to the memory location, such that an array supply voltage of the memory block starts charging one clock cycle before a memory block access.

Abstract: An output voltage is compared to a reference voltage, comparison signals are generated, and control signals and mode signals are generated in response thereto. The output voltage is generated in response to the control signals. A speed of the comparing is increased in response to the mode signals indicating that the output voltage is being increased. The speed is reduced in response to the mode signals indicating that the output voltage is being reduced. For increasing the speed, a path is enabled to conduct current. While the path is enabled, at least one switched voltage is connected to vary an amount of the current conducted through the path. The switched voltage is at least one of the reference voltage and the output voltage. For reducing the speed, the path is disabled against conducting current. While the path is disabled, the switched voltage is disconnected from varying the amount.

Abstract: A method of testing a packaged semiconductor device under test (DUT) including a leadframe having a plurality of pins and at least one thermal pad with a semiconductor die having topside bond pads wire-bonded by bond wires to the plurality of pins and secured to the thermal pad. A leadframe sheet is provided including a plurality of packaged DUTs including support members that connect to the packaged DUTs. The thermal pads are shorted to one another, and the leadframe sheet is trimmed for electrically isolating the pins from one another. A first electrical contact is provided to the thermal pad. Active pins of the plurality of pins are electrically contacted with a contactor. Automatic testing identifies shorts between the active pins and the thermal pad.

Abstract: Methods of encoding a video stream in a video encoder and decoding an encoded video stream in a video decoder using a low complexity large transform are provided. An encoding method includes receiving an n×n residual block in a transform component of the video encoder, and transforming the n×n residual block using an n×n transform to generate an n×n transform coefficient block, wherein the n×n transform is based on (n/m*n/m) m×m Hadamard transforms and (m*m) (n/m)×(n/m) discrete cosign transforms, wherein m<n. A decoding method includes receiving an n×n transform coefficient block in an inverse transform component of the video decoder, and applying an n×n inverse transform to the n×n transform coefficient block to reconstruct an n×n residual block, wherein the n×n inverse transform is based on (n/m*n/m) m×m Hadamard transforms and (m*m) (n/m)×(n/m) inverse discrete cosign transforms, wherein m<n.

Abstract: A two-bit read-only-memory (ROM) cell and method of sensing its data state. Each ROM cell in an array includes a single n-channel metal-oxide-semiconductor (MOS) transistor with a source biased to a reference voltage, and its drain connected by a contact or via to one or none of first, second, and third bit lines associated with its column in the array. Each row in the array is associated with a word line serving as the transistor gates for the cells in that row. In response to a column address, a column select circuit selects one pair of the three bit lines to be applied to a sense line in wired-NOR fashion for sensing.