Abstract: A storage circuit (11) includes memory cells (MCij), each of which includes an MTJ element, and reference cells (RCi), each of which includes a series circuit of an MTJ element set to a low-resistance state and a linear resistor (FR). A RW circuit (23j) that includes a sense amplifier is provided in each column of a memory cell array (21), and compares a data voltage on a corresponding bit line (BLj) with a reference voltage. The sense amplifier includes a pair of PMOS transistors to which the data voltage and the reference voltage are applied, a CMOS sense latch that is connected to a current path of the PMOS transistors.

Abstract: Provided is a degrader for injured mitochondria based on an autophagy mechanism, the degrader including a compound or a salt thereof, the compound containing a ligand capable of binding to or accumulating in mitochondria and a substituent represented by the following general formula (1): where R1, R2, and R3 are identical to or different from each other, and each represent a hydrogen atom or the like.

Abstract: The purpose of the present invention is to provide a novel medical application of pluripotent stem cells (muse cells) in regeneration medicine. The present invention provides a cell preparation and a pharmaceutical composition which are for amelioration and treatment of brain disorders resulting from fetal growth retardation, such as abnormal motor quality or abnormal neurological development, and which contain SSEA-3 positive pluripotent stem cells isolated from a mesenchymal tissue from a live body or cultured mesenchymal cells. It is assumed that this cell preparation is based on a mechanism where muse cells that are administered to objects having the disorders are engrafted on an impaired brain tissue, thereby ameliorating or treating the disorders.

Abstract: A memory device includes: a cell array that includes a first region including first memory cells and a second region including second memory cells; first word lines connected to each of the first memory cells; second word lines connected to each of the second memory cells; a first bit line commonly connected to the first memory cells and the second memory cells; a row decoder that selects one of the first word lines and one of the second word lines in parallel during a data read operation; and a sense amplifier between the first region and the second region and electrically connected to the first bit line during the data read operation.

Abstract: A sensor includes a body member, a volume change body, and a detection member. The body member has a flat plate-like shape, a first end in a first direction being supported, and a storage space opening at at least one of both end faces in a thickness direction. The volume change body, whose volume changes depending on an amount of a target, is supported by the body member so that at least a part of the volume change body is stored in the storage space. The detection member is in contact with a second end in the first direction of the body member, and detects stress caused by the change in the volume of the volume change body.

Abstract: An object of the present invention is to provide a scintillator having a high radiation stopping power, and having a shorter fluorescence decay time compared to conventional scintillators. The above object is achieved by setting the composition of a scintillator to a composition represented by General Formula (1). QxMyO3z??(1) (wherein in General Formula (1), Q includes at least two or more divalent metallic elements; M includes at least Hf; and x, y, and z independently satisfy 0.5?x?1.5, 0.5?y?1.5, and 0.7?z?1.5, respectively).

Abstract: An in-situ stress measurement method is provided. The method includes measuring a length of a maximum diameter at which an amount of distortion relative to a diameter of a standard circle of a measurement cross section of a boring core is largest and a length of a minimum diameter at which the amount of distortion relative to the diameter of the standard circle is smallest based on a shape of the measurement cross section of the boring core; measuring a length of a diameter in a vertical direction and a length of a diameter in a horizontal direction of the measurement cross section of a side-wall core acquired by hollowing ground in a well in an excavation direction thereof, based on a shape of the measurement cross section of the side-wall core; and calculating a maximum horizontal stress and a minimum horizontal stress by first and second equations.

Abstract: A random number generation unit and a computing system using the same, the unit including a magnetic tunnel junction element and being capable of developing the characteristics required for the execution of probabilistic computing and operating at a higher speed. A magnetic tunnel junction element includes a fixed layer having a ferromagnet and having a magnetization direction fixed substantially, a free layer having a ferromagnet and having a magnetization direction varying with a first time constant, and a barrier layer disposed between the layers configured with an insulator. The magnetic tunnel junction element has a shift magnetic field of an absolute value of 20 millitesla or smaller. The fixed layer has a plurality of ferromagnetic and non-magnetic coupling layers laminated one upon another, and ferromagnetic layers adjacent to each other among the respective ferromagnetic layers are coupled in terms of magnetization by the non-magnetic coupling layers in an antiparallel manner.

Abstract: A main object of the present disclosure is to provide a liquid electrolyte in which concentration of active fluoride ion is high. The present disclosure achieves the object by providing a liquid electrolyte to be used in a fluoride ion battery, the liquid electrolyte comprising: a potassium fluoride; an alkali metal amide salt including a cation of an alkali metal and an amide anion; and a glyme represented by a general formula R1—O(CH2CH2O)n—R2, in which R1 and R2 is each independently an alkyl group including 4 or less carbon atoms or a fluoroalkyl group including 4 or less carbon atoms, and n is within a range of 2 to 10.

Abstract: A method of manufacturing a semiconductor device including a substrate; a first nitride layer containing gallium on the substrate; and a second nitride layer containing silicon on the first nitride layer includes generating an etchant of a gas containing chlorine atoms or bromine atoms; and selectively removing the second nitride layer, wherein the etchant is generated by plasma discharge of the gas, wherein the second nitride layer and the first nitride layer are prevented from being irradiated with ultraviolet rays generated at a time of the plasma discharge, and wherein the selectively removing the second nitride layer includes etching the second nitride layer under a first atmosphere at a first pressure that is lower than a first saturated vapor pressure of a silicon compound and that is higher than a second saturated vapor pressure of a gallium compound.

Abstract: A porous microneedle capable of accessing a target portion on a surface of the skin or under the skin in a pinpoint manner, a microneedle array of the same, and a production method of the microneedle. A part of a surface of a porous needle main body is coated with a coating member. The needle main body may include a flow path inside formed to extend in a net shape. The needle main body may be formed of a porous body, and may include a flow path formed from void parts of the porous body.

Abstract: There are provided a ?-conjugated boron compound, an electronic device containing an organic functional layer including the ?-conjugated boron compound, a method for producing a triarylborane, and a method for producing a triarylborane intermediate. In the ?-conjugated boron compound, a boron atom is bonded to three aromatic groups via three boron-carbon bonds. Bond distances of the three boron-carbon bonds are all 1.48 ? or less.

Abstract: To provide a rare earth magnet having excellent coercive force and a production method thereof. A rare earth magnet, wherein the rare earth magnet comprises a magnetic phase containing Sm, Fe, and N, a Zn phase present around the magnetic phase, and an intermediate phase present between the magnetic phase and the Zn phase, wherein the intermediate phase contains Zn and the oxygen content of the intermediate phase is higher than the oxygen content of the Zn phase; and a method for producing a rare earth magnet, including mixing a magnetic raw material powder having an oxygen content of 1.0 mass % or less and an improving agent powder containing metallic Zn and/or a Zn alloy, and heat-treating the mixed powder.

Abstract: The present invention aims to provide a scintillator which has a short fluorescence decay time, whose fluorescence intensity after a period of time following radiation irradiation is low, and which shows largely improved light-transmittance. A scintillator represented by the following General Formula (1), the scintillator including Zr, having a Zr content of not less than 1500 ppm by mass therein, and being a block of a sintered body. QxMyO3z:A . . . (1) (wherein in General Formula (1), Q includes at least one or more kinds of divalent metallic elements; M includes at least Hf; and x, y, and z independently satisfy 0.5?x?1.5, 0.5?y?1.5, and 0.7?z?1.5, respectively).

Abstract: Provided is a cell product for treating myocarditis, comprising a SSEA-3-positive pluripotent stem cell derived from a mesenchymal tissue in a living body or a SSEA-3-positive pluripotent stem cell derived from a cultured mesenchymal cell.

Abstract: A magnetic memory device includes: a memory cell array including a plurality of lines arranged parallel to one another at predetermined intervals and extending in one direction, and a plurality of memory cells connected to the plurality of lines and arranged in a matrix along an extending direction of the plurality of lines and along an arrangement direction of the plurality of lines, each of the plurality of memory cells including a magnetoresistance effect element; a selection circuit connected to the plurality of lines and configured to select non-adjacent lines that are not adjacent to one another, from the plurality of lines; and a controller connected to the selection circuit and configured to cause the selection circuit to select the non-adjacent lines and allow a write current to flow through the non-adjacent lines simultaneously in writing data on the memory cell array.

Abstract: A method for treating or repairing osteochondral damage in a subject in need thereof, including administering to the subject a cell preparation comprising pluripotent stem cells positive for SSEA-3 isolated from a body mesenchymal tissue or cultured mesenchymal cells. The pluripotent stem cells have all of the following properties: (i) CD105-positivity; (ii) low or absent telomerase activity; (iii) having ability to differentiate into any of three germ layers; (iv) absence of demonstration of neoplastic proliferation; and (v) self-renewal ability. The pluripotent stem cells are administered at 1×103 cells to 2×107 cells as individual.

Abstract: A magnetoresistive element that has a magnetic material made of an alloy having a stable bcc structure containing Co as a main component, has an excellent tunnel magnetoresistive ratio, and can be put into practical use by mass production, and a magnetic storage device using the magnetoresistive element are provided. The magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially fixed, a second magnetic layer whose magnetization direction is changeable, and a non-magnetic layer arranged between the first magnetic layer and the second magnetic layer. The first magnetic layer and/or the second magnetic layer has an alloy having a bcc structure containing Co as a main component and Co and Mn.

Abstract: The present invention provides a method of producing an osteoblast construct from human iPS cells, the method including the steps of: (1) inducing formation of an embryoid body by subjecting undifferentiated human iPS cells to non-adherent culture; (2) inducing differentiation of the human iPS cells into mesodermal cells by subjecting the embryoid body of the human iPS cells obtained in the step (1) to non-adherent culture; and (3) inducing differentiation into osteoblasts by subjecting the mesodermal cells of the human iPS cells obtained in the step (2) to non-adherent culture.

Abstract: A power generation device is provided. A weight may vibrate in one direction as an axial direction in response to an external vibration. A beam may be arranged in at least one side with respect to the weight in the axial direction of the weight, and vibrate together with the weight. A piezoelectric element may be mounted on the beam. A guide may include a hollow guiding a movement of the weight in the axial direction. A stopper may be included in the weight. The stopper may restrict an amount of the movement of the weight in the axial direction within a predetermined amount. A stopper wall may stop the movement of the weight in the axial direction by contacting with the stopper.