Abstract: A transistor (24) which acts as a load-current source for a source follower amplifying transistor (22) for outputting a pixel signal to a pixel output line (40) is provided in each picture element (10), whereby a high bias current is prevented from passing through the high-resistance pixel output line (40), so that a variation in an offset voltage among picture elements is suppressed. Inclusion of the high-resistance pixel output line (40) into the source follower amplification circuit is also avoided, whereby the gain characteristics are prevented from deterioration. Thus, the S/N ratio of the picture element is improved so as to enhance the quality of the images.

Abstract: The generator comprises a stator (10) having a plurality of protruding portions for stator pole (12) on the outer peripheral surface of the stator main unit (11), and a rotor (20) having a plurality of protruding portions for rotor (22) mounted around the stator (10) in a rotatable state. Since the height of the plurality of protruding portions for stator pole (12) decreases along the rotational or reverse rotational direction of the rotor (20), a torque waveform containing odd-order components is generated when the rotor (20) is rotated coaxially around the stator (10). The plurality of protruding portions for stator pole (12) comprises a first protrusion group for stator pole (12A) and a second protrusion group for stator pole (12B), and the first protrusion group for stator pole (12A) and the second protrusion group for stator pole (12B) are formed with the protruding portions for stator pole (12) laid out along the circumferential direction spaced apart from each other.

Abstract: The purpose of the present invention is to improve the efficiency of conversion between terahertz electromagnetic wave energy and direct current energy via plasma waves in a terahertz electromagnetic wave conversion device with a field effect transistor structure. This invention has an HEMT structure having a substrate, an electron transit layer, an electron supply layer, a source and a drain, and includes a first and second group of gates. The gate length of each finger of the first group of gates is narrower than the gate length of each finger of the second group of gates, and each finger of each group of gates is disposed between the source and the drain on the same cycle. A first and second distance from each finger of the first group of gates to two fingers of the second group of gates adjacent to each finger are unequal lengths.

Abstract: A semiconductor device includes a channel layer protruding from a substrate and having protrusions extending from a sidewall thereof. Floating gates surrounding the channel layer are provided between the protrusions. Control gates surrounding the floating gates are stacked along the channel layer. Interlayer insulating layers are interposed between the control gates stacked along the channel layer. A level difference exists between a lateral surface of each of the floating gates, and a lateral surface of each of the protrusions.

Abstract: Provided is a scintillation neutron detector capable of measuring neutrons with precision even under a high amount of ? rays as background noise and excellent in neutron counting precision, the scintillation neutron detector comprising a neutron scintillator crystal containing 6Li, and the crystal having a specific surface area of no less than 60 cm2/cm3.

Abstract: A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m (P1?P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.

Abstract: A drug delivery system for delivering a drug at a sustained constant rate for a long period, which can be transplanted into an affected part safely and in a simple manner and can deliver a drug to the affected part for a long period. A sustained drug delivery system in which an implant is implanted into a body, wherein the implant is a PEG capsule comprising a box-shaped PEG and a porous PEG sheet.

Abstract: A measurement method that includes irradiating a void-arranged structure on which an analyte has been held with an electromagnetic wave, detecting an electromagnetic wave scattered on the void-arranged structure, and determining a property of the analyte on the basis of at least one parameter, the parameter including the amount of change in the ratio of the detected electromagnetic wave to the irradiated electromagnetic wave at a specific frequency between the presence and the absence of the analyte.

Abstract: A plasma monitoring method using a sensor, the sensor having a substrate; a first electrode, the first electrode being a conductive electrode and formed on the substrate while being isolated from the substrate; an insulating film formed on the first electrode; a contact hole formed in the insulating film and having a depth from a surface of the insulating film to the first electrode; and a second electrode, the second electrode being a conductive electrode, formed on the surface of the insulating film, and faced to plasma during a plasma process, the plasma monitoring method including measuring and monitoring potentials of the first electrode and the second electrode or a potential difference between the first electrode and the second electrode during the plasma process is disclosed. A plasma monitoring system carrying out the plasma monitoring method is also disclosed.

Abstract: A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure has ridge stripe structure. The second electrode is separated into a first section to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section to add electric field to the saturable absorption region by an isolation trench. When minimum width of the ridge stripe structure is WMIN, and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W2, 1<W2/WMIN is satisfied.

Abstract: Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed portion by dry etching a portion of the first semiconductor layer via a microwave plasma process using a bromine-based gas.

Abstract: [Object] To provide a method of manufacturing a perpendicular magnetization-type magnetic element, which does not need a step of depositing MgO. [Solving Means] The method of manufacturing a magnetoresistive element 1 according to the present invention includes laminating a first layer 30 on a base 10, the first layer 30 including a material containing at least one of Co, Ni, and Fe. Next, a second layer 40 is laminated on the first layer 30, the second layer 40 including Mg. Next, the Mg in the second layer 40 is oxidized to form MgO by applying an oxidation treatment to a laminated body including the first layer 30 and the second layer 40. Next, the second layer 40 is crystallized by applying a heat treatment to the laminated body, and the first layer 30 is caused to be perpendicularly magnetized. According to the manufacturing method, it is possible to manufacture a perpendicular magnetization-type CoFeB—MgO magnetic element without causing a problem arising from the deposition of MgO.

Abstract: A fullerene derivative represented by the following formula (1): wherein “FLN” represents a fullerene core, R1 represents an optionally substituted C1-C24 alkyl group or an optionally substituted C7-C24 aralkyl group, R2 and R3 independently represent a hydrogen atom or an optionally substituted C1-C24 hydrocarbon group but excluding a case where both of R2 and R3 are hydrogen atoms, and R2 and R3 may combine together to form a ring.

Abstract: A pixel area with a two-dimensional array of pixels (10) each including a photodiode and a memory area (3a) on which memory sections for holding signals produced by the pixels for continuously recordable frames are separately provided on a semiconductor substrate. All the pixels simultaneously perform a photocharge storage operation, and the signals produced by the photocharge storage are extracted in parallel through mutually independent pixel output lines (14). In a plurality of memory sections connected to one pixel output line, a sample-and-hold transistor of a different memory section is turned on for each exposure cycle so as to sequentially hold signals in a capacitor of each memory section. After the continuous imaging is completed, all the pixel are sequentially read. Unlike CCD cameras, the present sensor does not simultaneously drive all the gate loads. Therefore, the sensor consumes less power yet can be driven at high speeds.

Abstract: An ultrashort pulse and ultrahigh power laser diode device capable of outputting pulse laser light having higher peak power with a simple composition and a simple structure is provided. The laser diode device includes: a laminated structure composed of a first compound semiconductor layer containing n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing p-type impurity; a first electrode electrically connected to the first compound semiconductor layer; and a second electrode electrically connected to the second compound semiconductor layer, wherein the second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5*10?8 m or more, and driving is made by a pulse current having a value 10 or more times as large as a threshold current value.

Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.

Abstract: A submount having a structure and a configuration resistant to an increase in manufacturing cost and a reduction in yields or reliability, and including an oblique waveguide is provided. A submount having a first surface and allowing a semiconductor light-emitting element including a waveguide to be fixed on the first surface, the waveguide having an axis line inclined at ?WG (degrees) with respect to a normal to a light-incident/emission end surface of the semiconductor light-emitting element, and made of a semiconductor material with a refractive index nLE, the submount includes: a fusion-bonding material layer on the first surface; and an alignment mark formed in the fusion-bonding material layer, the alignment mark allowed to be recognized at an angle ?SM=sin?1 [nLE·sin(?WG)/n0], where a refractive index of a light-transmitting medium in proximity to the outside of the light-incident/emission end surface of the semiconductor light-emitting element is n0.

Abstract: To cover a wide wavelength bandwidth, a spectroscopic apparatus uses three varied line spacing concave diffraction gratings G1 to G3, the corresponding energy ranges for G1, G2, and G3 being 50 to 200, 155 to 350, and 300 to 2200 eV, respectively. In the respective wavelength ranges, the diffraction conditions are satisfied. To provide a high throughput and a high resolution in the respective wavelength regions, the incident angles ?1 to ?3 for G1 to G3 measured from the normal line of the diffraction grating are specified to be ?1<?2<?3. Presupposing the normal lines of all diffraction gratings are superposed upon a common normal line, in order to meet ?1<?2<?3, the center positions ?1 to ?3 for G1 to G3 are set on the normal line (as ?1<?2<?3). From G1 to G3, one diffraction grating can be selected.

Abstract: An evaluation aid which can be used as a phantom (imitation lesion) when a digital X-ray image thereof is taken and then evaluation is carried out through the digital X-ray image. The evaluation aid is adapted to be used for taking a digital X-ray image thereof through which evaluation is carried out, and contains a substrate (plate-like body) including a plurality of regions having different X-ray absorption ratios and step members provided on the plate-like body.

Abstract: Adhesiveness between a wiring layer and a resin layer is improved by forming a nitrided resin layer by nitriding a surface of a substrate by plasma, and furthermore, thinly forming a copper nitride film prior to forming a copper film.